Steve Stoffels

3.9k citations

103 papers · 3.3k indexed · h-index 35

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 89
- GaN-based semiconductor devices and materials 89
Electrical and Electronic Engineering 95
- Semiconductor materials and devices 63
- Silicon Carbide Semiconductor Technologies 49
- Advanced MEMS and NEMS Technologies 8

Co-authors: Stefaan Decoutere M. Van Hove Denis Marcon Niels Posthuma Benoit Bakeroot Tian‐Li Wu Matteo Meneghini Enrico Zanoni
Journals: IEEE Transactions on Electron Devices (18 papers)IEEE Electron Device Letters (12 papers)Microelectronics Reliability (8 papers)Applied Physics Letters (4 papers)physica status solidi (a) (3 papers)
Partner nations: Belgium Italy Netherlands

In The Last Decade

Steve Stoffels

102 papers receiving 3.2k citations

Peers

Countries citing papers authored by Steve Stoffels

Since Specialization

Citations

This map shows the geographic impact of Steve Stoffels's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steve Stoffels with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steve Stoffels more than expected).

Fields of papers citing papers by Steve Stoffels

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steve Stoffels. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steve Stoffels. The network helps show where Steve Stoffels may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Steve Stoffels, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Steve Stoffels Line = papers co-authored together Steve Stoffels links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs Applied Physics Express ·Д В Ребриков, Matteo Borga, Maria Ruzzarin, Carlo De Santi, Steve Stoffels, Shuzhen You, Karen Geens, Hu Liang, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	2020	22
2	Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications IEEE Transactions on Electron Devices ·Matteo Borga, Carlo De Santi, Steve Stoffels, Benoit Bakeroot, Xiangdong Li, Ming Zhao, M. Van Hove, Stefaan Decoutere, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni	2020	13
3	Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices Applied Physics Express ·Matteo Borga, Д В Ребриков, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	2020	8
4	Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate Ghent University Academic Bibliography (Ghent University) ·Benoit Bakeroot, Steve Stoffels, Niels Posthuma, D. Wellekens, Stefaan Decoutere	2019	31
5	Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs IEEE Transactions on Electron Devices ·Matteo Borga, Matteo Meneghini, Steve Stoffels, Xiangdong Li, Niels Posthuma, M. Van Hove, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2018	45
6	Methodology and More Accurate Electrothermal Model for Fast Simulation of Power HEMTs Aleš Chvála, Juraj Marek, B. Carpentier, Ababaw Andarge Gedefaw, A. Šatka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, D. Donoval	2018	0
7	Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs IEEE Transactions on Electron Devices ·Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, M. Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2017	43
8	Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests IEEE Electron Device Letters ·Jie Hu, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, Benoit Bakeroot, Denis Marcon, B. Kaczer, Stefaan Decoutere, G. Groeseneken	2017	34
9	Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry Padua Research Archive (University of Padova) ·Matteo Meneghini, Isabella Rossetto, Matteo Borga, E. Canato, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Steve Stoffels, M. Van Hove, Niels Posthuma, Stefaan Decoutere	2017	27
10	Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level Microelectronics Reliability ·Isabella Rossetto, Matteo Meneghini, E. Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni	2017	24
11	Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress IEEE Electron Device Letters ·Maria Ruzzarin, Matteo Meneghini, Isabella Rossetto, M. Van Hove, Steve Stoffels, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2016	38
12	Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs IEEE Electron Device Letters ·Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone, Niels Posthuma, E. Sangiorgi, Stefaan Decoutere, C. Fiegna	2016	139
13	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate Microelectronics Reliability ·Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian‐Li Wu, M. Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni	2015	39
14	Auの無いAlGaN/GaN Schottky障壁ダイオード上の一定電圧オフ状態ストレスの研究 Japanese Journal of Applied Physics ·Jie Hu, Steve Stoffels, Silvia Lenci, Tianli Wu, Poliani de Oliveira, You Shuzhen, Benoit Bakeroot, G. Groeseneken, Stefaan Decoutere	2015	1
15	Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode Applied Physics Letters ·Jie Hu, Steve Stoffels, Silvia Lenci, Benoit Bakeroot, R. Venegas, G. Groeseneken, Stefaan Decoutere	2015	33
16	Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes Japanese Journal of Applied Physics ·Jie Hu, Steve Stoffels, Silvia Lenci, Tian‐Li Wu, N. Ronchi, Shuzhen You, Benoit Bakeroot, G. Groeseneken, Stefaan Decoutere	2015	6
17	Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons Applied Physics Letters ·Matteo Meneghini, Davide Bisi, Denis Marcon, Steve Stoffels, M. Van Hove, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2014	62
18	Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics IEEE Transactions on Electron Devices ·M. Van Hove, Xuanwu Kang, Steve Stoffels, D. Wellekens, N. Ronchi, R. Venegas, Karen Geens, Stefaan Decoutere	2013	59
19	GAN-on-Si HEMTs for 50V RF applications European Microwave Integrated Circuit Conference ·Denis Marcon, Oleg Sinyugin, Sherman Tan Jun Hao, Xuanwu Kang, Silvia Lenci, Steve Stoffels, R. Venegas, Puneet Srivastava, Stefaan Decoutere	2012	6
20	Finite element analysis of thermo-elastical modal damping of MEMS vibrations Journal of Vibroengineering ·Rimantas Barauskas, Patricia de Leyva-Moreno, Ingrid De Wolf, Steve Stoffels, H.A.C. Tilmans	2007	3

About Steve Stoffels

Steve Stoffels is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 103 papers that have together received 3.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (89 papers), Semiconductor materials and devices (63 papers), Silicon Carbide Semiconductor Technologies (49 papers), Ga2O3 and related materials (27 papers), Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and interfaces (8 papers), Advanced MEMS and NEMS Technologies (8 papers) and Acoustic Wave Resonator Technologies (7 papers). The work is most often cited by research in Condensed Matter Physics (3.1k citations), Electronic, Optical and Magnetic Materials (1.3k citations), Electrical and Electronic Engineering (2.7k citations), Atomic and Molecular Physics, and Optics (606 citations) and Materials Chemistry (510 citations). Steve Stoffels has collaborated with scholars based in Belgium, Italy and Netherlands. Frequent co-authors include Stefaan Decoutere, M. Van Hove, Denis Marcon, Niels Posthuma, Benoit Bakeroot, Tian‐Li Wu, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso and G. Groeseneken. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronics Reliability, Applied Physics Letters and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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