Stefano Dalcanale

866 total citations
20 papers, 689 citations indexed

About

Stefano Dalcanale is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Stefano Dalcanale has authored 20 papers receiving a total of 689 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Stefano Dalcanale's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (13 papers) and Ga2O3 and related materials (8 papers). Stefano Dalcanale is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (13 papers) and Ga2O3 and related materials (8 papers). Stefano Dalcanale collaborates with scholars based in United Kingdom, Italy and United States. Stefano Dalcanale's co-authors include Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Isabella Rossetto, Martin Kuball, Michael J. Uren, Carlo De Santi, P. Moens, Abhishek Banerjee and Eldad Bahat‐Treidel and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Stefano Dalcanale

20 papers receiving 675 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Stefano Dalcanale United Kingdom 13 535 498 309 196 78 20 689
Ting-Hsiang Hung United States 10 427 0.8× 394 0.8× 342 1.1× 170 0.9× 74 0.9× 12 548
Jiacheng Lei Hong Kong 15 550 1.0× 540 1.1× 272 0.9× 137 0.7× 91 1.2× 22 667
Shahadat H. Sohel United States 12 344 0.6× 279 0.6× 315 1.0× 178 0.9× 47 0.6× 20 477
Dong Ji United States 13 625 1.2× 548 1.1× 295 1.0× 111 0.6× 91 1.2× 30 686
Jeramy Ray Dickerson United States 12 534 1.0× 450 0.9× 306 1.0× 178 0.9× 85 1.1× 33 665
Chunhong Zeng China 11 240 0.4× 242 0.5× 245 0.8× 182 0.9× 46 0.6× 33 402
Yuanjie Lv China 13 393 0.7× 261 0.5× 318 1.0× 235 1.2× 98 1.3× 56 537
Toshiharu Kubo Japan 13 319 0.6× 319 0.6× 212 0.7× 148 0.8× 57 0.7× 27 423
Hsiang-Chun Wang Taiwan 12 356 0.7× 372 0.7× 232 0.8× 145 0.7× 89 1.1× 49 486

Countries citing papers authored by Stefano Dalcanale

Since Specialization
Citations

This map shows the geographic impact of Stefano Dalcanale's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stefano Dalcanale with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stefano Dalcanale more than expected).

Fields of papers citing papers by Stefano Dalcanale

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stefano Dalcanale. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stefano Dalcanale. The network helps show where Stefano Dalcanale may publish in the future.

Co-authorship network of co-authors of Stefano Dalcanale

This figure shows the co-authorship network connecting the top 25 collaborators of Stefano Dalcanale. A scholar is included among the top collaborators of Stefano Dalcanale based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stefano Dalcanale. Stefano Dalcanale is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dalcanale, Stefano, et al.. (2025). Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications. Nature Electronics. 8(6). 510–517. 2 indexed citations
2.
Dalcanale, Stefano, Michael J. Uren, Wenshen Li, et al.. (2021). Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes. IEEE Transactions on Electron Devices. 69(1). 75–81. 16 indexed citations
3.
Uren, Michael J., et al.. (2021). Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation. Semiconductor Science and Technology. 36(9). 95024–95024. 8 indexed citations
4.
Dalcanale, Stefano, et al.. (2021). Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET. IEEE Transactions on Electron Devices. 68(5). 2220–2225. 5 indexed citations
5.
Uren, Michael J., et al.. (2020). Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs. Bristol Research (University of Bristol). 253–256. 2 indexed citations
6.
Dalcanale, Stefano, et al.. (2020). The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 67(3). 869–874. 31 indexed citations
7.
Dalcanale, Stefano, James W. Pomeroy, Michael J. Uren, et al.. (2019). Thermal Transport in Superlattice Castellated Field Effect Transistors. IEEE Electron Device Letters. 40(9). 1374–1377. 13 indexed citations
8.
Dalcanale, Stefano, Manikant Singh, James W. Pomeroy, et al.. (2019). Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography. IEEE Transactions on Electron Devices. 67(1). 204–211. 26 indexed citations
9.
Dalcanale, Stefano, et al.. (2018). Leakage mechanisms in GaN-on-GaN vertical pn diodes. Applied Physics Letters. 112(23). 47 indexed citations
10.
Singh, Manikant, Michael J. Uren, James W. Pomeroy, et al.. (2018). Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs. IEEE Electron Device Letters. 39(10). 1572–1575. 58 indexed citations
11.
Pomeroy, James W., Manikant Singh, Stefano Dalcanale, et al.. (2018). Raman Thermography of Peak Channel Temperature in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga2O3 MOSFETs. IEEE Electron Device Letters. 40(2). 189–192. 60 indexed citations
12.
Rossetto, Isabella, Matteo Meneghini, Alaleh Tajalli, et al.. (2017). Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 64(9). 3734–3739. 109 indexed citations
13.
Dalcanale, Stefano, Matteo Meneghini, Alaleh Tajalli, et al.. (2017). GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift. Research Padua Archive (University of Padua). 4B–1.1. 11 indexed citations
14.
Rossetto, Isabella, Matteo Meneghini, Oliver Hilt, et al.. (2016). Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate. IEEE Transactions on Electron Devices. 63(6). 2334–2339. 132 indexed citations
15.
Rossetto, Isabella, Matteo Meneghini, Riccardo Silvestri, et al.. (2016). Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress. Padua Research Archive (University of Padova). 35–38. 8 indexed citations
16.
Zanoni, Enrico, Gaudenzio Meneghesso, Matteo Meneghini, et al.. (2016). Reliability of Gallium Nitride microwave transistors. Padua Research Archive (University of Padova). 12 indexed citations
17.
Meneghini, Matteo, Riccardo Silvestri, Stefano Dalcanale, et al.. (2015). Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. Padua Research Archive (University of Padova). 4 indexed citations
18.
Meneghini, Matteo, P. Vanmeerbeek, Riccardo Silvestri, et al.. (2015). Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage. IEEE Transactions on Electron Devices. 62(3). 782–787. 103 indexed citations
19.
Meneghini, Matteo, Oliver Hilt, Clément Fleury, et al.. (2015). Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectronics Reliability. 58. 177–184. 24 indexed citations
20.
Stocco, Antonio, Simone Gerardin, Davide Bisi, et al.. (2014). Proton induced trapping effect on space compatible GaN HEMTs. Microelectronics Reliability. 54(9-10). 2213–2216. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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