S. Keller

32.4k total citations · 6 hit papers
594 papers, 27.2k citations indexed

About

S. Keller is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, S. Keller has authored 594 papers receiving a total of 27.2k indexed citations (citations by other indexed papers that have themselves been cited), including 562 papers in Condensed Matter Physics, 342 papers in Electrical and Electronic Engineering and 244 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in S. Keller's work include GaN-based semiconductor devices and materials (562 papers), Ga2O3 and related materials (241 papers) and Semiconductor materials and devices (207 papers). S. Keller is often cited by papers focused on GaN-based semiconductor devices and materials (562 papers), Ga2O3 and related materials (241 papers) and Semiconductor materials and devices (207 papers). S. Keller collaborates with scholars based in United States, Japan and Italy. S. Keller's co-authors include Umesh K. Mishra, Steven P. DenBaars, James S. Speck, S. Heikman, B.P. Keller, Shuji Nakamura, D. Kapolnek, R. Vetury, A. Chakraborty and P. Fini and has published in prestigious journals such as Nature Materials, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S. Keller

579 papers receiving 26.2k citations

Hit Papers

The impact of surface states on the DC and RF characteris... 1996 2026 2006 2016 2001 1996 1998 2006 2006 250 500 750 1000
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
    2001 1.2k citations S. Keller, Umesh K. Mishra et al. profile →
  2. Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
    1996 732 citations S. Keller, B.P. Keller et al. Applied Physics Letters profile →
  3. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
    1998 614 citations S. Keller, Steven P. DenBaars et al. Applied Physics Letters profile →
  4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
    2006 553 citations P. Fini, S. Keller et al. profile →
  5. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
    2006 367 citations S. Keller, Steven P. DenBaars et al. IEEE Electron Device Letters profile →
  6. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
    2013 361 citations Steven P. DenBaars, S. Keller et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Keller United States 82 24.5k 13.5k 11.8k 9.1k 8.0k 594 27.2k
Isamu Akasaki Japan 70 20.8k 0.8× 7.0k 0.5× 10.3k 0.9× 9.8k 1.1× 7.9k 1.0× 718 23.1k
O. Ambacher Germany 65 16.9k 0.7× 13.8k 1.0× 8.2k 0.7× 8.8k 1.0× 6.7k 0.8× 807 26.3k
Umesh K. Mishra United States 102 37.9k 1.5× 25.0k 1.9× 18.4k 1.6× 13.1k 1.4× 12.6k 1.6× 984 43.9k
Masayuki Senoh Japan 39 14.7k 0.6× 5.7k 0.4× 6.0k 0.5× 7.4k 0.8× 7.0k 0.9× 44 17.2k
W. J. Schaff United States 55 13.2k 0.5× 7.0k 0.5× 6.7k 0.6× 5.6k 0.6× 6.6k 0.8× 359 16.4k
N. Grandjean Switzerland 64 11.4k 0.5× 6.6k 0.5× 5.0k 0.4× 4.8k 0.5× 8.3k 1.0× 543 16.1k
L.F. Eastman United States 65 13.2k 0.5× 12.2k 0.9× 5.9k 0.5× 5.2k 0.6× 9.2k 1.2× 524 19.7k
Shigefusa F. Chichibu Japan 56 9.0k 0.4× 6.1k 0.5× 5.9k 0.5× 8.5k 0.9× 4.8k 0.6× 414 14.8k
W. Walukiewicz United States 64 8.7k 0.4× 9.2k 0.7× 4.4k 0.4× 6.7k 0.7× 10.0k 1.3× 323 17.3k
F. A. Ponce United States 52 8.2k 0.3× 5.3k 0.4× 3.8k 0.3× 5.5k 0.6× 4.0k 0.5× 360 12.3k

Countries citing papers authored by S. Keller

Since Specialization
Citations

This map shows the geographic impact of S. Keller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Keller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Keller more than expected).

Fields of papers citing papers by S. Keller

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Keller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Keller. The network helps show where S. Keller may publish in the future.

Co-authorship network of co-authors of S. Keller

This figure shows the co-authorship network connecting the top 25 collaborators of S. Keller. A scholar is included among the top collaborators of S. Keller based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Keller. S. Keller is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rampazzo, Fabiana, Carlo De Santi, Gaudenzio Meneghesso, et al.. (2024). Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. Research Padua Archive (University of Padua). 5B.2–1. 1 indexed citations
2.
Romanczyk, Brian, et al.. (2024). Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N. Crystals. 14(6). 485–485. 1 indexed citations
3.
Mohanty, Subhajit, et al.. (2021). HfO 2 as gate insulator on N-polar GaN–AlGaN heterostructures. Semiconductor Science and Technology. 36(3). 35017–35017. 7 indexed citations
4.
Liu, Wenjian, Shubhra S. Pasayat, Aidan A. Taylor, et al.. (2021). Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films. Applied Physics Letters. 119(4). 2 indexed citations
5.
Wu, Feng, et al.. (2020). MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates. Semiconductor Science and Technology. 36(1). 15011–15011. 9 indexed citations
6.
Liu, Wenjian, Brian Romanczyk, Nirupam Hatui, et al.. (2020). Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current. IEEE Electron Device Letters. 41(10). 1468–1471. 8 indexed citations
7.
Guidry, Matthew, Brian Romanczyk, Nirupam Hatui, et al.. (2020). A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1–2. 7 indexed citations
8.
Pasayat, Shubhra S., Chirag Gupta, Daniel A. Cohen, et al.. (2019). Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN. Semiconductor Science and Technology. 34(11). 115020–115020. 35 indexed citations
9.
Liu, Wenjian, Silvia H. Chan, Chirag Gupta, et al.. (2019). Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN. Applied Physics Letters. 115(3). 16 indexed citations
10.
Pasayat, Shubhra S., Elaheh Ahmadi, Brian Romanczyk, et al.. (2019). First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE. Semiconductor Science and Technology. 34(4). 45009–45009. 20 indexed citations
11.
Bonef, Bastien, Wenjian Liu, Silvia H. Chan, et al.. (2019). Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001¯ N-polar and (0001) Ga-polar GaN. Applied Physics Letters. 115(17). 11 indexed citations
12.
Bisi, Davide, Carlo De Santi, Matteo Meneghini, et al.. (2018). Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs. IEEE Electron Device Letters. 39(7). 1007–1010. 28 indexed citations
13.
Bisi, Davide, Silvia H. Chan, Xia-Ji Liu, et al.. (2016). On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors. Applied Physics Letters. 108(11). 48 indexed citations
14.
Liu, Xia-Ji, Christine M. Jackson, Feng Wu, et al.. (2016). Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition. Journal of Applied Physics. 119(1). 12 indexed citations
15.
Zúñiga‐Pérez, J., Vincent Consonni, L. Lymperakis, et al.. (2016). Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews. 3(4). 110 indexed citations
16.
Gupta, Geetak, et al.. (2015). Measurement of the hot electron mean free path in GaN. Bulletin of the American Physical Society. 1 indexed citations
17.
Xu, Hongtao, et al.. (2005). High power GaN oscillators using field-plated HEMT structure. IEEE MTT-S International Microwave Symposium Digest, 2005.. 1345–1348. 12 indexed citations
18.
Sun, Chi‐Kuang, Shi‐Wei Chu, S. Keller, et al.. (2001). Mapping piezoelectric‐field distribution in gallium nitride with scanning second‐harmonic generation microscopy. Scanning. 23(3). 182–192. 18 indexed citations
19.
Wu, Yifeng, B.P. Keller, S. Keller, et al.. (1999). GaN-Based FETs for Microwave Power Amplification. IEICE Transactions on Electronics. 82(11). 1895–1905. 27 indexed citations
20.
Marchand, H., J. P. Ibbetson, P. Fini, et al.. (1998). Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD. MRS Internet Journal of Nitride Semiconductor Research. 3. 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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