S. Keller

32.4k citations

594 papers · 27.2k indexed · 6 hit papers · h-index 82

Condensed Matter Physics top 0.01%
- GaN-based semiconductor devices and materials 562
Electronic, Optical and Magnetic Materials top 0.05%
- Ga2O3 and related materials 241
Atomic and Molecular Physics, and Optics top 0.1%
- Semiconductor Quantum Structures and Devices 159
Electrical and Electronic Engineering top 0.1%
- Semiconductor materials and devices 207
- Radio Frequency Integrated Circuit Design 99
- Silicon Carbide Semiconductor Technologies 67
Materials Chemistry top 0.2%
- ZnO doping and properties 128
Mechanics of Materials
- Metal and Thin Film Mechanics 105

Co-authors: Umesh K. Mishra Steven P. DenBaars James S. Speck S. Heikman B.P. Keller Shuji Nakamura D. Kapolnek R. Vetury
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (116 papers)IEEE Electron Device Letters (68 papers)Journal of Applied Physics (45 papers)
Partner nations: United States Japan Italy

In The Last Decade

S. Keller

579 papers receiving 26.2k citations

Hit Papers

6 papers align trajectories log scale

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

2013 Acta Materialia
2006 IEEE Electron Device Letters
2006 Nature Materials
2001 IEEE Transactions on Electron Devices
1998 Applied Physics Letters
1996 Applied Physics Letters

Peers

Countries citing papers authored by S. Keller

Since Specialization

Citations

This map shows the geographic impact of S. Keller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Keller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Keller more than expected).

Fields of papers citing papers by S. Keller

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Keller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Keller. The network helps show where S. Keller may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Keller, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Keller Line = papers co-authored together S. Keller links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	N-polar gallium nitride doping by atomic layer deposition for improved electrical performance Applied Physics Letters ·R. Y. Zhang,William J. Mitchell,Nina Haryati,Desi Yulia Fitri,Emilia Bunea,S. Keller,U. K. Mishra	2025	0
2	Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC Applied Physics Letters ·F Oscar Reyes,Rebecca Unger,Michael Iza,Abdullah Alharbi,A. L. Fraĭman,Shuji Nakamura,U. K. Mishra,S. Keller,Steven P. DenBaars	2025	0
3	Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects Research Padua Archive (University of Padua) ·Tian Wu,Armytha Alistair,H. De Freitas,Gracia Aída Herrera González,Fabiana Rampazzo,Carlo De Santi,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni,Davide Bisi,Matthew Guidry,S. Keller,Umesh K. Mishra	2024	1
4	First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz IEEE Microwave and Wireless Technology Letters ·Th. Knittel,Ingeborg Dhooge,東藤貢,Weiyi Li,Matthew Guidry,Brian Romanczyk,Christian Wurm,Wenjian Liu,Nirupam Hatui,Desi Yulia Fitri,Marisa Spampinato,S. Keller,Umesh K. Mishra	2023	20
5	GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate IEEE Electron Device Letters ·Arlen Arlen,Athith Krishna,Brian Romanczyk,Nirupam Hatui,Wenjian Liu,S. Keller,Umesh K. Mishra	2022	11
6	A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT Marisa Spampinato,Matthew Guidry,Brian Romanczyk,Salvador Suárez García,Nirupam Hatui,Christian Wurm,Athith Krishna,Shubhra S. Pasayat,S. Keller,James F. Buckwalter,Umesh K. Mishra	2020	7
7	A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods Journal of Applied Physics ·Wenjian Liu,عمادالدین امین عباس,Jo L. Tweed,Silvia H. Chan,S. Keller,Umesh K. Mishra	2020	5
8	Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current IEEE Electron Device Letters ·Wenjian Liu,عمادالدین امین عباس,Brian Romanczyk,Nirupam Hatui,Matthew Guidry,William J. Mitchell,S. Keller,Umesh K. Mishra	2020	8
9	Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN Semiconductor Science and Technology ·Shubhra S. Pasayat,Chirag Gupta,Andrea Carolina Meza Herrera,Daniel A. Cohen,Steven P. DenBaars,Shuji Nakamura,S. Keller,Umesh K. Mishra,(unknown)	2019	35
10	First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology ·Shubhra S. Pasayat,Elaheh Ahmadi,Brian Romanczyk,Onur S. Koksaldi,Anchal Agarwal,Matthew Guidry,Chirag Gupta,Christian Wurm,S. Keller,Umesh K. Mishra	2019	20
11	Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition Semiconductor Science and Technology ·Shulamith Horowitz,Bastien Bonef,Shuji Nakamura,James S. Speck,Steven P. DenBaars,S. Keller	2019	4
12	Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN Applied Physics Letters ·عمادالدین امین عباس,Wenjian Liu,Silvia H. Chan,Chirag Gupta,Matthew Guidry,Haoran Li,S. Keller,Umesh K. Mishra	2019	16
13	Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001¯ N-polar and (0001) Ga-polar GaN Applied Physics Letters ·عمادالدین امین عباس,Bastien Bonef,Wenjian Liu,Silvia H. Chan,Jo L. Tweed,James S. Speck,S. Keller,Umesh K. Mishra	2019	11
14	Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs IEEE Electron Device Letters ·Davide Bisi,Carlo De Santi,Matteo Meneghini,Steven Wienecke,P. Chesta,Haoran Li,Elaheh Ahmadi,S. Keller,Umesh K. Mishra,Gaudenzio Meneghesso,Enrico Zanoni	2018	28
15	On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors Applied Physics Letters ·Davide Bisi,Silvia H. Chan,Xia-Ji Liu,Ramya Yeluri,S. Keller,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Umesh K. Mishra	2016	48
16	Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics ·Xia-Ji Liu,Christine M. Jackson,Feng Wu,B. Mazumder,Ramya Yeluri,Hideto Motohashi,S. Keller,Aaron R. Arehart,Steven A. Ringel,James S. Speck,Umesh K. Mishra	2016	12
17	Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters ·Ramya Yeluri,Jing Lu,Christophe A. Hurni,David A. Browne,Srabanti Chowdhury,S. Keller,James S. Speck,Umesh K. Mishra	2015	73
18	High power GaN oscillators using field-plated HEMT structure IEEE MTT-S International Microwave Symposium Digest, 2005. ·Hongtao Xu,Jianxing Wu,S. Heikman,S. Keller,Umesh K. Mishra,R.A. York	2005	12
19	Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand,N. Zhang,Lingyan Zhao,Yuval Golan,S. J. Rosner,G. Girolami,P. Fini,J. P. Ibbetson,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra	1999	110
20	Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand,J. P. Ibbetson,P. Fini,P. Kozodoy,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra	1998	71

About S. Keller

S. Keller is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 594 papers that have together received 27.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (562 papers), Ga2O3 and related materials (241 papers), Semiconductor materials and devices (207 papers), Semiconductor Quantum Structures and Devices (159 papers), ZnO doping and properties (128 papers), Metal and Thin Film Mechanics (105 papers), Radio Frequency Integrated Circuit Design (99 papers) and Silicon Carbide Semiconductor Technologies (67 papers). The work is most often cited by research in Condensed Matter Physics (24.5k citations), Electronic, Optical and Magnetic Materials (11.8k citations) and Atomic and Molecular Physics, and Optics (8.0k citations). S. Keller has collaborated with scholars based in United States, Japan and Italy. Frequent co-authors include Umesh K. Mishra, Steven P. DenBaars, James S. Speck, S. Heikman, B.P. Keller, Shuji Nakamura, D. Kapolnek, R. Vetury, A. Chakraborty and P. Fini. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, Japanese Journal of Applied Physics and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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