Silvia H. Chan

1.1k total citations
40 papers, 968 citations indexed

About

Silvia H. Chan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Silvia H. Chan has authored 40 papers receiving a total of 968 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 30 papers in Condensed Matter Physics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Silvia H. Chan's work include GaN-based semiconductor devices and materials (30 papers), Semiconductor materials and devices (26 papers) and Silicon Carbide Semiconductor Technologies (11 papers). Silvia H. Chan is often cited by papers focused on GaN-based semiconductor devices and materials (30 papers), Semiconductor materials and devices (26 papers) and Silicon Carbide Semiconductor Technologies (11 papers). Silvia H. Chan collaborates with scholars based in United States, Italy and Japan. Silvia H. Chan's co-authors include Umesh K. Mishra, S. Keller, Chirag Gupta, Anchal Agarwal, Yuuki Enatsu, Cory Lund, Taiichi Otsuji, V. Ryzhii, Akira Satou and Junqian Liu and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Silvia H. Chan

40 papers receiving 921 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Silvia H. Chan United States 16 727 677 380 262 164 40 968
Shaowen Han China 12 530 0.7× 611 0.9× 290 0.8× 118 0.5× 146 0.9× 19 704
Hangfeng Ji United Kingdom 10 475 0.7× 563 0.8× 107 0.3× 325 1.2× 132 0.8× 12 715
Shafat Jahangir United States 14 215 0.3× 488 0.7× 226 0.6× 292 1.1× 315 1.9× 35 678
M. R. Gokhale India 15 283 0.4× 301 0.4× 182 0.5× 302 1.2× 317 1.9× 59 651
Cory Lund United States 15 398 0.5× 619 0.9× 276 0.7× 195 0.7× 181 1.1× 31 698
Satoru Nagao Japan 10 340 0.5× 623 0.9× 364 1.0× 348 1.3× 263 1.6× 21 786
Hyun Kyu Kim South Korea 13 205 0.3× 347 0.5× 185 0.5× 450 1.7× 65 0.4× 41 603
Ž. Gačević Spain 15 225 0.3× 420 0.6× 190 0.5× 282 1.1× 258 1.6× 38 611
M. Hayden Breckenridge United States 16 291 0.4× 506 0.7× 352 0.9× 165 0.6× 81 0.5× 25 568
Jintong Xu China 13 248 0.3× 241 0.4× 169 0.4× 138 0.5× 124 0.8× 44 468

Countries citing papers authored by Silvia H. Chan

Since Specialization
Citations

This map shows the geographic impact of Silvia H. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Silvia H. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Silvia H. Chan more than expected).

Fields of papers citing papers by Silvia H. Chan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Silvia H. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Silvia H. Chan. The network helps show where Silvia H. Chan may publish in the future.

Co-authorship network of co-authors of Silvia H. Chan

This figure shows the co-authorship network connecting the top 25 collaborators of Silvia H. Chan. A scholar is included among the top collaborators of Silvia H. Chan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Silvia H. Chan. Silvia H. Chan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Liu, Wenjian, et al.. (2020). Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD. Applied Physics Express. 13(6). 61010–61010. 8 indexed citations
3.
Liu, Wenjian, Silvia H. Chan, Chirag Gupta, et al.. (2019). Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN. Applied Physics Letters. 115(3). 16 indexed citations
4.
Bonef, Bastien, Wenjian Liu, Silvia H. Chan, et al.. (2019). Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001¯ N-polar and (0001) Ga-polar GaN. Applied Physics Letters. 115(17). 11 indexed citations
5.
Gupta, Chirag, Silvia H. Chan, Shubhra S. Pasayat, S. Keller, & Umesh K. Mishra. (2019). Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices. Journal of Applied Physics. 125(12). 3 indexed citations
6.
Ruzzarin, Maria, Matteo Borga, Enrico Zanoni, et al.. (2019). Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). Padua Research Archive (University of Padova). 1–5. 3 indexed citations
7.
Gupta, Chirag, Cory Lund, Silvia H. Chan, et al.. (2018). Corrections to “<italic>In Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355]. IEEE Electron Device Letters. 39(2). 316–316. 5 indexed citations
8.
Ji, Dong, Chirag Gupta, Anchal Agarwal, et al.. (2018). Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET). IEEE Electron Device Letters. 39(5). 711–714. 61 indexed citations
9.
Gupta, Chirag, Silvia H. Chan, Anchal Agarwal, et al.. (2017). First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET. IEEE Electron Device Letters. 38(11). 1575–1578. 45 indexed citations
10.
Chan, Silvia H., Davide Bisi, Ramya Yeluri, et al.. (2017). Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN. Journal of Applied Physics. 122(17). 4 indexed citations
11.
Ji, Dong, Chirag Gupta, Silvia H. Chan, et al.. (2017). Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices. 9.4.1–9.4.4. 67 indexed citations
12.
Bisi, Davide, Silvia H. Chan, Xia-Ji Liu, et al.. (2016). On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors. Applied Physics Letters. 108(11). 48 indexed citations
13.
Gupta, Chirag, Silvia H. Chan, Yuuki Enatsu, et al.. (2016). OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET. IEEE Electron Device Letters. 37(12). 1601–1604. 68 indexed citations
14.
Chan, Silvia H., S. Keller, Haoran Li, et al.. (2016). High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces. Semiconductor Science and Technology. 31(6). 65008–65008. 14 indexed citations
15.
Bisi, Davide, Silvia H. Chan, Onur S. Koksaldi, et al.. (2016). Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices. Research Padua Archive (University of Padua). 119–122. 11 indexed citations
16.
Chan, Silvia H., S. Keller, Onur S. Koksaldi, et al.. (2016). Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane. Journal of Crystal Growth. 464. 54–58. 6 indexed citations
17.
Liu, Xia-Ji, Silvia H. Chan, Feng Wu, et al.. (2014). Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity. Journal of Crystal Growth. 408. 78–84. 24 indexed citations
18.
Liu, Xia-Ji, Steven Wienecke, Ramya Yeluri, et al.. (2014). In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge. Applied Physics Letters. 104(26). 14 indexed citations
19.
Otsuji, Taiichi, Stephane Albon Boubanga Tombet, Silvia H. Chan, Akira Satou, & V. Ryzhii. (2011). Terahertz light amplification by stimulated emission of radiation from optically pumped graphene. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8023. 802304–802304. 5 indexed citations
20.
Otsuji, Taiichi, Stephane Albon Boubanga Tombet, Silvia H. Chan, et al.. (2011). Amplified stimulated terahertz emission from optically pumped graphene. 517–519. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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