Silvia H. Chan

1.1k citations

40 papers · 968 indexed · h-index 16

Co-authors: Umesh K. Mishra S. Keller Chirag Gupta Anchal Agarwal Yuuki Enatsu Cory Lund Junqian Liu V. Ryzhii
Topics: GaN-based semiconductor devices and materials (30 papers)Semiconductor materials and devices (26 papers)Silicon Carbide Semiconductor Technologies (11 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: ACS Nano Applied Physics Letters Journal of Applied Physics
Partner nations: United States Italy Japan

In The Last Decade

Silvia H. Chan

40 papers receiving 921 citations

Peers

Countries citing papers authored by Silvia H. Chan

Since Specialization

Citations

This map shows the geographic impact of Silvia H. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Silvia H. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Silvia H. Chan more than expected).

Fields of papers citing papers by Silvia H. Chan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Silvia H. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Silvia H. Chan. The network helps show where Silvia H. Chan may publish in the future.

Co-authorship network of co-authors of Silvia H. Chan

This figure shows the co-authorship network connecting the top 25 collaborators of Silvia H. Chan. A scholar is included among the top collaborators of Silvia H. Chan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Silvia H. Chan. Silvia H. Chan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods 2020 ·Journal of Applied Physics ·Wenjian Liu,(unknown),(unknown),Silvia H. Chan,S. Keller,Umesh K. Mishra	5
2	Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD 2020 ·Applied Physics Express ·(unknown),Wenjian Liu,Brian Romanczyk,(unknown),Silvia H. Chan,S. Keller,Umesh K. Mishra	8
3	Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN 2019 ·Applied Physics Letters ·(unknown),Wenjian Liu,Silvia H. Chan,Chirag Gupta,Matthew Guidry,Haoran Li,S. Keller,Umesh K. Mishra	16
4	Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001¯ N-polar and (0001) Ga-polar GaN 2019 ·Applied Physics Letters ·(unknown),Bastien Bonef,Wenjian Liu,Silvia H. Chan,(unknown),James S. Speck,S. Keller,Umesh K. Mishra	11
5	Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 2019 ·Padua Research Archive (University of Padova) ·Maria Ruzzarin,Matteo Borga,Enrico Zanoni,Matteo Meneghini,Gaudenzio Meneghesso,Dong Ji,Wenwen Li,Silvia H. Chan,Anchal Agarwal,Chirag Gupta,S. Keller,Umesh K. Mishra,Srabanti Chowdhury	3
6	Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices 2019 ·Journal of Applied Physics ·Chirag Gupta,Silvia H. Chan,Shubhra S. Pasayat,S. Keller,Umesh K. Mishra	3
7	Corrections to “<italic>In Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355] 2018 ·IEEE Electron Device Letters ·Chirag Gupta,Cory Lund,Silvia H. Chan,Anchal Agarwal,Junqian Liu,Yuuki Enatsu,S. Keller,Umesh K. Mishra	5
8	Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN 2017 ·Journal of Applied Physics ·Silvia H. Chan,Davide Bisi,(unknown),Ramya Yeluri,(unknown),S. Keller,Steven P. DenBaars,Matteo Meneghini,Umesh K. Mishra	4
9	First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET 2017 ·IEEE Electron Device Letters ·Chirag Gupta,Silvia H. Chan,Anchal Agarwal,Nirupam Hatui,S. Keller,Umesh K. Mishra	45
10	In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates 2017 ·IEEE Electron Device Letters ·Chirag Gupta,Cory Lund,Silvia H. Chan,Anchal Agarwal,Junqian Liu,Yuuki Enatsu,S. Keller,Umesh K. Mishra	142
11	On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors 2016 ·Applied Physics Letters ·Davide Bisi,Silvia H. Chan,Xia-Ji Liu,Ramya Yeluri,S. Keller,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Umesh K. Mishra	48
12	OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET 2016 ·IEEE Electron Device Letters ·Chirag Gupta,Silvia H. Chan,Yuuki Enatsu,Anchal Agarwal,S. Keller,Umesh K. Mishra	68
13	Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane 2016 ·Journal of Crystal Growth ·Silvia H. Chan,S. Keller,Onur S. Koksaldi,Chirag Gupta,Steven P. DenBaars,Umesh K. Mishra	6
14	High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces 2016 ·Semiconductor Science and Technology ·Silvia H. Chan,S. Keller,(unknown),Haoran Li,Brian Romanczyk,Steven P. DenBaars,Umesh K. Mishra	14
15	Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices 2016 ·Research Padua Archive (University of Padua) ·Davide Bisi,Silvia H. Chan,(unknown),Onur S. Koksaldi,S. Keller,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Umesh K. Mishra	11
16	Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures 2015 ·Semiconductor Science and Technology ·Haoran Li,S. Keller,Silvia H. Chan,Jing Lu,Steven P. DenBaars,Umesh K. Mishra	17
17	In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge 2014 ·Applied Physics Letters ·Xia-Ji Liu,(unknown),(unknown),Steven Wienecke,(unknown),Ramya Yeluri,Silvia H. Chan,Jing Lu,H. Li,S. Keller,Umesh K. Mishra	14
18	Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity 2014 ·Journal of Crystal Growth ·Xia-Ji Liu,Silvia H. Chan,Feng Wu,(unknown),S. Keller,James S. Speck,Umesh K. Mishra	24
19	Amplified stimulated terahertz emission from optically pumped graphene 2011 ·Taiichi Otsuji,Stephane Albon Boubanga Tombet,Silvia H. Chan,Takayuki Watanabe,Akira Satou,V. Ryzhii	2
20	Terahertz light amplification by stimulated emission of radiation from optically pumped graphene 2011 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Taiichi Otsuji,Stephane Albon Boubanga Tombet,Silvia H. Chan,Akira Satou,V. Ryzhii	5

About Silvia H. Chan

Silvia H. Chan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 40 papers that have together received 968 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Semiconductor materials and devices (26 papers) and Silicon Carbide Semiconductor Technologies (11 papers). The work is most often cited by research in Condensed Matter Physics (677 citations), Electronic, Optical and Magnetic Materials (380 citations) and Electrical and Electronic Engineering (727 citations). Silvia H. Chan has collaborated with scholars based in United States, Italy and Japan. Frequent co-authors include Umesh K. Mishra, S. Keller, Chirag Gupta, Anchal Agarwal, Yuuki Enatsu, Cory Lund, Junqian Liu, V. Ryzhii, Akira Satou and Taiichi Otsuji. Their work appears in journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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