Benoit Bakeroot

3.0k total citations
125 papers, 2.4k citations indexed

About

Benoit Bakeroot is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Benoit Bakeroot has authored 125 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 114 papers in Electrical and Electronic Engineering, 98 papers in Condensed Matter Physics and 33 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Benoit Bakeroot's work include GaN-based semiconductor devices and materials (98 papers), Semiconductor materials and devices (76 papers) and Silicon Carbide Semiconductor Technologies (73 papers). Benoit Bakeroot is often cited by papers focused on GaN-based semiconductor devices and materials (98 papers), Semiconductor materials and devices (76 papers) and Silicon Carbide Semiconductor Technologies (73 papers). Benoit Bakeroot collaborates with scholars based in Belgium, Italy and Switzerland. Benoit Bakeroot's co-authors include Stefaan Decoutere, Steve Stoffels, Niels Posthuma, Shuzhen You, G. Groeseneken, Tian‐Li Wu, Denis Marcon, Brice De Jaeger, M. Van Hove and A. Stockman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Benoit Bakeroot

119 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Benoit Bakeroot Belgium 29 2.1k 2.0k 947 433 297 125 2.4k
Eldad Bahat‐Treidel Germany 25 1.8k 0.9× 1.5k 0.8× 1.0k 1.1× 313 0.7× 431 1.5× 70 2.1k
Denis Marcon Belgium 32 2.5k 1.2× 2.2k 1.1× 1.0k 1.1× 426 1.0× 389 1.3× 84 2.7k
Steve Stoffels Belgium 35 3.1k 1.5× 2.7k 1.3× 1.3k 1.4× 606 1.4× 510 1.7× 103 3.3k
Min Sun United States 22 1.8k 0.9× 1.7k 0.8× 974 1.0× 347 0.8× 344 1.2× 47 2.1k
Daniel Piedra United States 20 1.5k 0.7× 1.3k 0.6× 784 0.8× 288 0.7× 290 1.0× 35 1.7k
Manabu Yanagihara Japan 16 1.5k 0.7× 1.5k 0.7× 690 0.7× 270 0.6× 250 0.8× 35 1.8k
Karen Geens Belgium 18 1.3k 0.6× 1.2k 0.6× 565 0.6× 207 0.5× 180 0.6× 61 1.4k
Masahiko Kuraguchi Japan 14 1.3k 0.6× 1.1k 0.5× 610 0.6× 255 0.6× 268 0.9× 30 1.4k
Fabiana Rampazzo Italy 15 1.4k 0.7× 1.2k 0.6× 399 0.4× 353 0.8× 216 0.7× 56 1.5k
Yoshiharu Takada Japan 14 1.3k 0.6× 1.1k 0.6× 599 0.6× 265 0.6× 266 0.9× 32 1.4k

Countries citing papers authored by Benoit Bakeroot

Since Specialization
Citations

This map shows the geographic impact of Benoit Bakeroot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benoit Bakeroot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benoit Bakeroot more than expected).

Fields of papers citing papers by Benoit Bakeroot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benoit Bakeroot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benoit Bakeroot. The network helps show where Benoit Bakeroot may publish in the future.

Co-authorship network of co-authors of Benoit Bakeroot

This figure shows the co-authorship network connecting the top 25 collaborators of Benoit Bakeroot. A scholar is included among the top collaborators of Benoit Bakeroot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benoit Bakeroot. Benoit Bakeroot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Borga, Matteo, et al.. (2024). Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping. IEEE Transactions on Electron Devices. 71(10). 5949–5955. 3 indexed citations
2.
Fiegna, C., Benoit Bakeroot, Matteo Borga, et al.. (2024). Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. Ghent University Academic Bibliography (Ghent University). 1–6. 2 indexed citations
3.
Tallarico, Andrea Natale, Matteo Borga, Benoit Bakeroot, et al.. (2024). P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime. IEEE Electron Device Letters. 45(9). 1630–1633. 3 indexed citations
4.
Borga, Matteo, Niels Posthuma, Anurag Vohra, Benoit Bakeroot, & Stefaan Decoutere. (2024). Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering. physica status solidi (a). 221(21). 4 indexed citations
5.
Trojman, Lionel, et al.. (2023). A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination. Solid-State Electronics. 210. 108778–108778. 1 indexed citations
6.
Borga, Matteo, Benoit Bakeroot, Niels Posthuma, et al.. (2023). Role of the GaN-on-Si Epi-Stack on ΔR ON Caused by Back-Gating Stress. IEEE Transactions on Electron Devices. 70(10). 5203–5209. 3 indexed citations
7.
Borga, Matteo, Benoit Bakeroot, Niels Posthuma, et al.. (2022). The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs. IEEE Electron Device Letters. 43(11). 1846–1849. 11 indexed citations
8.
Modolo, Nicola, Carlo De Santi, Matteo Borga, et al.. (2022). Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices. IEEE Transactions on Electron Devices. 69(8). 4432–4437. 4 indexed citations
9.
Santi, Carlo De, Matteo Buffolo, Matteo Borga, et al.. (2021). Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines. 12(4). 445–445. 14 indexed citations
10.
Minj, Albert, Ming Zhao, Benoit Bakeroot, & Kristof Paredis. (2021). Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells. Applied Physics Letters. 118(3). 2 indexed citations
11.
Tallarico, Andrea Natale, Benoit Bakeroot, Matteo Borga, et al.. (2021). TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs. IEEE Transactions on Electron Devices. 69(2). 507–513. 24 indexed citations
12.
Stockman, A., E. Canato, Matteo Meneghini, et al.. (2021). Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs. IEEE Transactions on Device and Materials Reliability. 21(2). 169–175. 38 indexed citations
13.
Li, Xiangdong, Niels Posthuma, Benoit Bakeroot, et al.. (2020). Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics. IEEE Transactions on Power Electronics. 36(5). 4927–4930. 34 indexed citations
14.
Borga, Matteo, Carlo De Santi, Steve Stoffels, et al.. (2020). Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications. IEEE Transactions on Electron Devices. 67(2). 595–599. 13 indexed citations
15.
Posthuma, Niels, et al.. (2020). Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs. IEEE Transactions on Device and Materials Reliability. 21(1). 57–63. 7 indexed citations
16.
Bakeroot, Benoit, Steve Stoffels, Niels Posthuma, D. Wellekens, & Stefaan Decoutere. (2019). Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate. Ghent University Academic Bibliography (Ghent University). 419–422. 31 indexed citations
17.
Stockman, A., Alaleh Tajalli, Matteo Meneghini, et al.. (2018). The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 66(1). 372–377. 19 indexed citations
18.
Hu, Jie, Steve Stoffels, Ming Zhao, et al.. (2017). Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests. IEEE Electron Device Letters. 38(3). 371–374. 34 indexed citations
19.
Hu, Jie, Steve Stoffels, Silvia Lenci, et al.. (2015). Auの無いAlGaN/GaN Schottky障壁ダイオード上の一定電圧オフ状態ストレスの研究. Japanese Journal of Applied Physics. 54. 1–4. 1 indexed citations
20.
Bakeroot, Benoit, et al.. (2008). A high-voltage switching ADSL line-driver, with an n-type output stage. International Conference on Circuits. 31(1). 60–64. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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