Benoit Bakeroot

3.0k citations

125 papers · 2.4k indexed · h-index 29

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 98
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 33
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 76
- Silicon Carbide Semiconductor Technologies 73
- Advancements in Semiconductor Devices and Circuit Design 31
- Electrostatic Discharge in Electronics 9
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 15
- Semiconductor materials and interfaces 9
Materials Chemistry

Co-authors: Stefaan Decoutere Steve Stoffels Niels Posthuma Shuzhen You G. Groeseneken Tian‐Li Wu Denis Marcon Brice De Jaeger
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices (28 papers)IEEE Electron Device Letters (14 papers)Applied Physics Letters (7 papers)
Partner nations: Belgium Italy Switzerland

In The Last Decade

Benoit Bakeroot

119 papers receiving 2.3k citations

Peers

Countries citing papers authored by Benoit Bakeroot

Since Specialization

Citations

This map shows the geographic impact of Benoit Bakeroot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benoit Bakeroot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benoit Bakeroot more than expected).

Fields of papers citing papers by Benoit Bakeroot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benoit Bakeroot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benoit Bakeroot. The network helps show where Benoit Bakeroot may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Benoit Bakeroot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Benoit Bakeroot Line = papers co-authored together Benoit Bakeroot links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate Ghent University Academic Bibliography (Ghent University) ·Kieran Petrasek,C. Fiegna,Benoit Bakeroot,Matteo Borga,Niels Posthuma,Stefaan Decoutere,Enrico Sangiorgi,Andrea Natale Tallarico	2024	2
2	P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime IEEE Electron Device Letters ·Andrea Natale Tallarico,Kieran Petrasek,Matteo Borga,Benoit Bakeroot,Niels Posthuma,Moshe Doron,Stefaan Decoutere,E. Sangiorgi,C. Fiegna	2024	3
3	Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering physica status solidi (a) ·Matteo Borga,Niels Posthuma,Anurag Vohra,Benoit Bakeroot,Stefaan Decoutere	2024	4
4	Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping IEEE Transactions on Electron Devices ·Lina Castanho,Matteo Borga,Расулова Наргиза Ботирқуловна,Stefaan Decoutere,Johan Lauwaert,Benoit Bakeroot	2024	3
5	A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination Solid-State Electronics ·Lionel Trojman,Iacia MVMS,Brice De Jaeger,Niels Posthuma,Stefaan Decoutere,Benoit Bakeroot	2023	1
6	Role of the GaN-on-Si Epi-Stack on ΔR _ON Caused by Back-Gating Stress IEEE Transactions on Electron Devices ·Kieran Petrasek,Matteo Borga,Margaret M. McQuiggan,Benoit Bakeroot,Niels Posthuma,Anurag Vohra,Stefaan Decoutere,C. Fiegna,Andrea Natale Tallarico	2023	3
7	Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices IEEE Transactions on Electron Devices ·Nicola Modolo,Carlo De Santi,V. G. Dilanyan,T.C. Schnauffer,Matteo Borga,Niels Posthuma,Benoit Bakeroot,Shuzhen You,Stefaan Decoutere,Andrea Bevilacqua,A. Neviani,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2022	4
8	The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs IEEE Electron Device Letters ·Kieran Petrasek,Matteo Borga,Benoit Bakeroot,Niels Posthuma,Stefaan Decoutere,E. Sangiorgi,C. Fiegna,Andrea Natale Tallarico	2022	11
9	Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application Applied Physics Letters ·Anurag Vohra,Karen Geens,Ming Zhao,Elliott K. Tannor,H. Hahn,Dirk Fahle,Benoit Bakeroot,D. Wellekens,Фролов Валерий Александрович,R. Langer,Stefaan Decoutere	2022	13
10	Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs Micromachines ·Д В Ребриков,Carlo De Santi,Matteo Buffolo,Matteo Borga,Shuzhen You,Karen Geens,Benoit Bakeroot,Stefaan Decoutere,Andrea Gerosa,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2021	14
11	High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs IEEE Transactions on Electron Devices ·Kieran Petrasek,C. Fiegna,Niels Posthuma,Matteo Borga,Benoit Bakeroot,Stefaan Decoutere,Andrea Natale Tallarico	2021	26
12	Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells Applied Physics Letters ·Albert Minj,Ming Zhao,Benoit Bakeroot,Kristof Paredis	2021	2
13	Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs IEEE Transactions on Device and Materials Reliability ·A. Stockman,E. Canato,Matteo Meneghini,Gaudenzio Meneghesso,P. Moens,Benoit Bakeroot	2021	38
14	Reliability of p-GaN Gate HEMTs in Reverse Conduction IEEE Transactions on Electron Devices ·Feitoza João Vitor Fonseca,Xiangdong Li,Benoit Bakeroot,Nooshin Amirifar,Karen Geens,Stanley P. Wood,Ming Zhao,Shuzhen You,G. Groeseneken,Stefaan Decoutere	2021	17
15	Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability Materials ·Д В Ребриков,Carlo De Santi,Matteo Borga,Shuzhen You,Karen Geens,Benoit Bakeroot,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2020	17
16	Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications IEEE Transactions on Electron Devices ·Matteo Borga,Carlo De Santi,Steve Stoffels,Benoit Bakeroot,Xiangdong Li,Ming Zhao,M. Van Hove,Stefaan Decoutere,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni	2020	13
17	Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates IEEE Transactions on Semiconductor Manufacturing ·Xiangdong Li,Karen Geens,D. Wellekens,Ming Zhao,Alessandro Magnani,Nooshin Amirifar,Benoit Bakeroot,Shuzhen You,Dirk Fahle,H. Hahn,M. Heuken,gnacio Nuñez,Özgür Aktaş,C. Basceri,Denis Marcon,G. Groeseneken,Stefaan Decoutere	2020	17
18	Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics IEEE Transactions on Power Electronics ·Xiangdong Li,Niels Posthuma,Benoit Bakeroot,Hu Liang,Shuzhen You,Zhicheng Wu,Ming Zhao,G. Groeseneken,Stefaan Decoutere	2020	34
19	Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs IEEE Transactions on Device and Materials Reliability ·Kieran Petrasek,Niels Posthuma,Benoit Bakeroot,Matteo Borga,Stefaan Decoutere,Andrea Natale Tallarico	2020	7
20	The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman,Alaleh Tajalli,Matteo Meneghini,Michael J. Uren,D. Krishna Kanth,Simone Gerardin,Marta Bagatin,A. Paccagnella,Gaudenzio Meneghesso,Enrico Zanoni,P. Moens,Benoit Bakeroot	2018	19

About Benoit Bakeroot

Benoit Bakeroot is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 125 papers that have together received 2.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (98 papers), Semiconductor materials and devices (76 papers), Silicon Carbide Semiconductor Technologies (73 papers), Ga2O3 and related materials (33 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and interfaces (9 papers) and Electrostatic Discharge in Electronics (9 papers). The work is most often cited by research in Condensed Matter Physics (2.1k citations), Electronic, Optical and Magnetic Materials (947 citations) and Electrical and Electronic Engineering (2.0k citations). Benoit Bakeroot has collaborated with scholars based in Belgium, Italy and Switzerland. Frequent co-authors include Stefaan Decoutere, Steve Stoffels, Niels Posthuma, Shuzhen You, G. Groeseneken, Tian‐Li Wu, Denis Marcon, Brice De Jaeger, M. Van Hove and A. Stockman. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Microelectronics Reliability and Solid-State Electronics.

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