Umesh K. Mishra

55.0k citations

984 papers · 43.9k indexed · 11 hit papers · h-index 102

Condensed Matter Physics top 0.01%
Electrical and Electronic Engineering top 0.02%
Electronic, Optical and Magnetic Materials top 0.02%
Materials Chemistry top 0.1%
Atomic and Molecular Physics, and Optics top 0.05%

Co-authors: S. Keller Steven P. DenBaars James S. Speck Yifeng Wu P. Parikh S. Heikman P. Fini J. P. Ibbetson
Topics: GaN-based semiconductor devices and materials (834 papers)Semiconductor materials and devices (407 papers)Ga2O3 and related materials (344 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Nature Materials Physical review. B, Condensed matter Applied Physics Letters
Partner nations: United States Australia Japan

In The Last Decade

Umesh K. Mishra

957 papers receiving 42.1k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

AlGaN/GaN HEMTs-an overview of device operation and applications

2002 1.7k citations Umesh K. Mishra et al. profile →
GaN-Based RF Power Devices and Amplifiers

2008 1.4k citations Umesh K. Mishra et al. profile →
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

2001 1.2k citations S. Keller, Umesh K. Mishra et al. profile →
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2000 890 citations J. P. Ibbetson, P. Fini et al. Applied Physics Letters profile →
30-W/mm GaN HEMTs by Field Plate Optimization

2004 881 citations Umesh K. Mishra et al. IEEE Electron Device Letters profile →
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

1997 629 citations Umesh K. Mishra, Steven P. DenBaars et al. Applied Physics Letters profile →
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

2006 553 citations P. Fini, S. Keller et al. profile →
Very-high power density AlGaN/GaN HEMTs

2001 466 citations J. P. Ibbetson, Umesh K. Mishra et al. profile →
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

2006 367 citations S. Keller, Steven P. DenBaars et al. IEEE Electron Device Letters profile →
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

2013 361 citations Steven P. DenBaars, S. Keller et al. profile →
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

2009 205 citations Shuji Nakamura, Steven P. DenBaars et al. profile →

Peers

Countries citing papers authored by Umesh K. Mishra

Since Specialization

Citations

This map shows the geographic impact of Umesh K. Mishra's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Umesh K. Mishra with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Umesh K. Mishra more than expected).

Fields of papers citing papers by Umesh K. Mishra

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Umesh K. Mishra. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Umesh K. Mishra. The network helps show where Umesh K. Mishra may publish in the future.

Co-authorship network of co-authors of Umesh K. Mishra

This figure shows the co-authorship network connecting the top 25 collaborators of Umesh K. Mishra. A scholar is included among the top collaborators of Umesh K. Mishra based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Umesh K. Mishra. Umesh K. Mishra is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 2024 ·Research Padua Archive (University of Padua) ·(unknown),(unknown),(unknown),(unknown),Fabiana Rampazzo,Carlo De Santi,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni,Davide Bisi,Matthew Guidry,S. Keller,Umesh K. Mishra	1
2	Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N 2024 ·Crystals ·(unknown),(unknown),Brian Romanczyk,Nirupam Hatui,(unknown),(unknown),(unknown),S. Keller,Umesh K. Mishra	1
3	Electrical and Structural Analysis of β‐Ga₂O₃/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer 2023 ·Advanced Electronic Materials ·(unknown),Kai Sun,(unknown),(unknown),Umesh K. Mishra,Elaheh Ahmadi	4
4	First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz 2023 ·IEEE Microwave and Wireless Technology Letters ·(unknown),(unknown),(unknown),Weiyi Li,Matthew Guidry,Brian Romanczyk,Christian Wurm,Wenjian Liu,Nirupam Hatui,(unknown),(unknown),S. Keller,Umesh K. Mishra	20
5	GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate 2022 ·IEEE Electron Device Letters ·(unknown),Athith Krishna,Brian Romanczyk,Nirupam Hatui,Wenjian Liu,S. Keller,Umesh K. Mishra	11
6	A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT 2020 ·(unknown),Matthew Guidry,Brian Romanczyk,(unknown),Nirupam Hatui,Christian Wurm,Athith Krishna,Shubhra S. Pasayat,S. Keller,James F. Buckwalter,Umesh K. Mishra	7
7	A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods 2020 ·Journal of Applied Physics ·Wenjian Liu,(unknown),(unknown),Silvia H. Chan,S. Keller,Umesh K. Mishra	5
8	Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current 2020 ·IEEE Electron Device Letters ·Wenjian Liu,(unknown),Brian Romanczyk,Nirupam Hatui,Matthew Guidry,William J. Mitchell,S. Keller,Umesh K. Mishra	8
9	Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN 2019 ·Semiconductor Science and Technology ·Shubhra S. Pasayat,Chirag Gupta,(unknown),Daniel A. Cohen,Steven P. DenBaars,Shuji Nakamura,S. Keller,Umesh K. Mishra,(unknown)	35
10	First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE 2019 ·Semiconductor Science and Technology ·Shubhra S. Pasayat,Elaheh Ahmadi,Brian Romanczyk,Onur S. Koksaldi,Anchal Agarwal,Matthew Guidry,Chirag Gupta,Christian Wurm,S. Keller,Umesh K. Mishra	20
11	Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN 2019 ·Applied Physics Letters ·(unknown),Wenjian Liu,Silvia H. Chan,Chirag Gupta,Matthew Guidry,Haoran Li,S. Keller,Umesh K. Mishra	16
12	Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001¯ N-polar and (0001) Ga-polar GaN 2019 ·Applied Physics Letters ·(unknown),Bastien Bonef,Wenjian Liu,Silvia H. Chan,(unknown),James S. Speck,S. Keller,Umesh K. Mishra	11
13	Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs 2018 ·IEEE Electron Device Letters ·Davide Bisi,Carlo De Santi,Matteo Meneghini,Steven Wienecke,(unknown),Haoran Li,Elaheh Ahmadi,S. Keller,Umesh K. Mishra,Gaudenzio Meneghesso,Enrico Zanoni	28
14	On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors 2016 ·Applied Physics Letters ·Davide Bisi,Silvia H. Chan,Xia-Ji Liu,Ramya Yeluri,S. Keller,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Umesh K. Mishra	48
15	Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition 2016 ·Journal of Applied Physics ·Xia-Ji Liu,Christine M. Jackson,Feng Wu,B. Mazumder,Ramya Yeluri,(unknown),S. Keller,Aaron R. Arehart,Steven A. Ringel,James S. Speck,Umesh K. Mishra	12
16	Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction 2015 ·Applied Physics Letters ·Ramya Yeluri,Jing Lu,Christophe A. Hurni,David A. Browne,Srabanti Chowdhury,S. Keller,James S. Speck,Umesh K. Mishra	73
17	Current status and scope of gallium nitride-based vertical transistors for high-power electronics application 2013 ·Semiconductor Science and Technology ·Srabanti Chowdhury,Brian L. Swenson,Man Hoi Wong,Umesh K. Mishra	120
18	High power GaN oscillators using field-plated HEMT structure 2005 ·IEEE MTT-S International Microwave Symposium Digest, 2005. ·Hongtao Xu,(unknown),S. Heikman,S. Keller,Umesh K. Mishra,R.A. York	12
19	Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer 1999 ·MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand,N. Zhang,Lingyan Zhao,Yuval Golan,S. J. Rosner,G. Girolami,P. Fini,J. P. Ibbetson,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra	110
20	Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD 1998 ·MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand,J. P. Ibbetson,P. Fini,P. Kozodoy,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra	71

About Umesh K. Mishra

Umesh K. Mishra is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 984 papers that have together received 43.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (834 papers), Semiconductor materials and devices (407 papers) and Ga2O3 and related materials (344 papers). The work is most often cited by research in Condensed Matter Physics (37.9k citations), Electronic, Optical and Magnetic Materials (18.4k citations) and Electrical and Electronic Engineering (25.0k citations). Umesh K. Mishra has collaborated with scholars based in United States, Australia and Japan. Frequent co-authors include S. Keller, Steven P. DenBaars, James S. Speck, Yifeng Wu, P. Parikh, S. Heikman, P. Fini, J. P. Ibbetson, B.P. Keller and P. Kozodoy. Their work appears in journals such as Nature Materials, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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