P. Moens

4.3k citations

175 papers · 3.1k indexed · h-index 30

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 53
Electrical and Electronic Engineering top 1%
- Silicon Carbide Semiconductor Technologies 99
- Semiconductor materials and devices 95
- Advancements in Semiconductor Devices and Circuit Design 79
- Electrostatic Discharge in Electronics 36
- Electromagnetic Compatibility and Noise Suppression 14
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 13
Radiation top 5%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry
- Solid-state spectroscopy and crystallography 8

Co-authors: M. Tack Gaudenzio Meneghesso Matteo Meneghini Abhishek Banerjee Enrico Zanoni G. Groeseneken G. Van den bosch Freddy Callens
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Microelectronics Reliability (12 papers)IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (11 papers)
Partner nations: Belgium United States Italy

In The Last Decade

P. Moens

173 papers receiving 3.0k citations

Peers

Countries citing papers authored by P. Moens

Since Specialization

Citations

This map shows the geographic impact of P. Moens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Moens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Moens more than expected).

Fields of papers citing papers by P. Moens

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Moens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Moens. The network helps show where P. Moens may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Moens, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Moens Line = papers co-authored together P. Moens links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·P. Moens,Martin Domeij,Erix Paul,L. De Schepper,Iwan Sudrajat,Fredrik Allerstam	2024	1
2	A Status Overview of SiC MOSFET Reliability P. Moens,Meimei Yang,Jian-jie Jiang,Gerardo Gómez García,Doni Nurdiansah,Martin Domeij	2024	2
3	Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs Materials science forum ·Sven Steinbronn,Fredrik Allerstam,济宁济宁医学院附属医院,Sofie Cambré,E. Goovaerts,Henk Vrielinck,P. Moens	2023	1
4	Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling Journal of Applied Physics ·健一菜花,Carlo De Santi,Sven Steinbronn,Célio Igor Gomes Alencar,Martin Domeij,P. Moens,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni	2021	18
5	Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs IEEE Transactions on Device and Materials Reliability ·A. Stockman,E. Canato,Matteo Meneghini,Gaudenzio Meneghesso,P. Moens,Benoit Bakeroot	2021	38
6	Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress Applied Physics Letters ·健一菜花,Matteo Meneghini,E. Canato,Carlo De Santi,A. Stockman,Enrico Zanoni,P. Moens,Gaudenzio Meneghesso	2019	35
7	Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors Ghent University Academic Bibliography (Ghent University) ·Alaleh Tajalli,E. Canato,Philippe-Jacques Dubois,Matteo Meneghini,A. Stockman,P. Moens,Enrico Zanoni,Gaudenzio Meneghesso	2019	4
8	The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman,Alaleh Tajalli,Matteo Meneghini,Michael J. Uren,D. Krishna Kanth,Simone Gerardin,Marta Bagatin,A. Paccagnella,Gaudenzio Meneghesso,Enrico Zanoni,P. Moens,Benoit Bakeroot	2018	19
9	Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman,健一菜花,Matteo Meneghini,Enrico Zanoni,Gaudenzio Meneghesso,Benoit Bakeroot,P. Moens	2018	88
10	IEEE ITRW Working Group Position Paper-Materials and Devices: WBG and UWBG Materials and Devices Are Examined in a New Working Group IEEE Power Electronics Magazine ·Victor Veliadis,Robert Kaplar,Jincai Zhang,Mietek Bakowski,И.В. Ахметвалеева,P. Moens	2018	4
11	Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Isabella Rossetto,Matteo Meneghini,Alaleh Tajalli,Stefano Dalcanale,Carlo De Santi,P. Moens,Abhishek Banerjee,Enrico Zanoni,Gaudenzio Meneghesso	2017	109
12	First experimental demonstration of solid state circuit breaker (SSCB) using 650V GaN-based monolithic bidirectional switch Z. John Shen,Zhenyu Miao,W. P. Patton,P. Moens,M. R. Groves,Aqsa Sultana,Gloria Brugués,Jinkyoung Chung	2016	33
13	Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·M. Tirion,Susanna Reggiani,Elena Gnani,A. Gnudi,G. Baccarani,P. Moens,P. Vanmeerbeek,Abhishek Banerjee,Gaudenzio Meneghesso	2015	29
14	Development of 650V Cascode GaN Technology V Stella,Aqsa Sultana,Gloria Brugués,Jinkyoung Chung,P. Moens,M. Tack,A. Zust	2015	5
15	Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs Bristol Research (University of Bristol) ·P. Moens,Abhishek Banerjee,Michael J. Uren,Matteo Meneghini,Serge Karboyan,Indranil Chatterjee,P. Vanmeerbeek,Markus Cäsar,V Brijlal,Aqsa Sultana,Enrico Zanoni,Gaudenzio Meneghesso,Martin Kuball,M. Tack	2015	71
16	On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices Research Padua Archive (University of Padua) ·P. Moens,P. Vanmeerbeek,Abhishek Banerjee,Susanto Usman,Alberto Vartabedian,P. Coppens,Ziadul Faiez,M. Tack,Wenjing Yang,Michael J. Uren,Martin Kuball,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni	2015	93
17	Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs Microelectronics Reliability ·A. Fontserè,Amador Pérez‐Tomás,Philippe Godignon,José del R. Millán,Herbert De Vleeschouwer,J. M. Parsey,P. Moens	2012	11
18	New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge J. Roig,D. Krishna Kanth,Bethany Algayer,Samuel Odewunmi,里高松,P. Moens,F. Bauwens,M. Tack	2010	2
19	Towards a universal model for hot carrier degradation in DMOS transistors P. Moens,Dhanoop Varghese,Yurany Luz Díaz Olmos	2010	16
20	An EPR study of intact and powdered human tooth enamel dried at 400�C Calcified Tissue International ·Freddy Callens,P. Moens,R. M. H. Verbeeck	1995	69

About P. Moens

P. Moens is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Ceramics and Composites, Electronic, Optical and Magnetic Materials and Biophysics, having authored 175 papers that have together received 3.1k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (99 papers), Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (79 papers), GaN-based semiconductor devices and materials (53 papers), Electrostatic Discharge in Electronics (36 papers), Electromagnetic Compatibility and Noise Suppression (14 papers), Ga2O3 and related materials (13 papers) and Solid-state spectroscopy and crystallography (8 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electrical and Electronic Engineering (2.5k citations), Electronic, Optical and Magnetic Materials (606 citations), Radiation (109 citations) and Atomic and Molecular Physics, and Optics (307 citations). P. Moens has collaborated with scholars based in Belgium, United States and Italy. Frequent co-authors include M. Tack, Gaudenzio Meneghesso, Matteo Meneghini, Abhishek Banerjee, Enrico Zanoni, G. Groeseneken, G. Van den bosch, Freddy Callens, A. Stockman and P. Vanmeerbeek. Their work appears in journals such as Microelectronics Reliability, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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