Manabu Yanagihara

2.2k citations

35 papers · 1.8k indexed · 1 hit paper · h-index 16

Condensed Matter Physics top 0.5%
Electrical and Electronic Engineering top 2%
Electronic, Optical and Magnetic Materials top 5%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry

Co-authors: Yasuhiro Uemoto Tetsuzo Ueda Masahiro Hikita Hisayoshi Matsuo Hidetoshi Ishida Tsuyoshi Tanaka Hiroaki Ueno Daisuke Ueda
Topics: GaN-based semiconductor devices and materials (23 papers)Radio Frequency Integrated Circuit Design (14 papers)Silicon Carbide Semiconductor Technologies (14 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: Japan United States Italy

In The Last Decade

Manabu Yanagihara

34 papers receiving 1.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2007 826 citations Yasuhiro Uemoto, Masahiro Hikita et al. IEEE Transactions on Electron Devices profile →

Peers

Countries citing papers authored by Manabu Yanagihara

Since Specialization

Citations

This map shows the geographic impact of Manabu Yanagihara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Manabu Yanagihara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Manabu Yanagihara more than expected).

Fields of papers citing papers by Manabu Yanagihara

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Manabu Yanagihara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Manabu Yanagihara. The network helps show where Manabu Yanagihara may publish in the future.

Co-authorship network of co-authors of Manabu Yanagihara

This figure shows the co-authorship network connecting the top 25 collaborators of Manabu Yanagihara. A scholar is included among the top collaborators of Manabu Yanagihara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Manabu Yanagihara. Manabu Yanagihara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors 2017 ·IEEE Transactions on Electron Devices ·Hideyuki Okita,Masahiro Hikita,(unknown),Takahiro Satô,(unknown),Hisayoshi Matsuo,(unknown),M. Mannoh,(unknown),Masayuki Kuroda,Manabu Yanagihara,Ayanori Ikoshi,Tatsuo Morita,Kenichiro Tanaka,Yasuhiro Uemoto	24
2	Reliability of hybrid-drain-embedded gate injection transistor 2017 ·Kenichiro Tanaka,Tatsuo Morita,Masahiro Ishida,(unknown),Tetsuzo Ueda,(unknown),Ayanori Ikoshi,Masahiro Hikita,(unknown),Manabu Yanagihara,Yasuhiro Uemoto	54
3	Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors 2011 ·Japanese Journal of Applied Physics ·Nobuyuki Otsuka,(unknown),Manabu Yanagihara,Yasuhiro Uemoto,Daisuke Ueda	4
4	A K-band AlGaN/GaN-based MMIC amplifier with microstrip lines on sapphire 2008 ·(unknown),Masayuki Kuroda,(unknown),(unknown),Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Hiroyuki Sakai,Tsuyoshi Tanaka,Ming Li	2
5	Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor 2008 ·IEEE Electron Device Letters ·Hidetoshi Ishida,Daisuke Shibata,Manabu Yanagihara,Yasuhiro Uemoto,Hisayoshi Matsuo,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	50
6	Present and future prospects of gan-based power electronics 2008 ·Daisuke Ueda,Masahiro Hikita,Satoshi Nakazawa,(unknown),Hidetoshi Ishida,Manabu Yanagihara,Kaoru Inoue,Tetsuzo Ueda,Yasuhiro Uemoto,Tsuyoshi Tanaka,Takashi Egawa	15
7	650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor 2007 ·Tatsuo Morita,Manabu Yanagihara,Hidetoshi Ishida,Masahiro Hikita,Kazuhiro Kaibara,Hisayoshi Matsuo,Yasuhiro Uemoto,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	81
8	8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation 2007 ·Yasuhiro Uemoto,Daisuke Shibata,Manabu Yanagihara,Hidetoshi Ishida,Hisayoshi Matsuo,(unknown),(unknown),Ming Li,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	82
9	A Normally-off AlGaN/GaN Transistor with R<sub>on</sub>A=2.6m&#x003A9;cm<sup>2</sup> and BV<sub>ds</sub>=640V Using Conductivity Modulation 2006 ·Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	44
10	A millimeter-wave flip-chip IC using micro-bump bonding technology 2002 ·Hiroyuki Sakai,Yuichi Ota,Koji Inoue,Manabu Yanagihara,Takahiro Matsuno,M. Tanabe,Takayuki Yoshida,Y. Ikeda,(unknown),Katsuyuki Takahashi,M. Sagawa	6
11	253-GHz f/sub max/ AlGaAs/GaAs HBT with Ni/Ti/Pt/Ti/Pt-contact and L-shaped base electrode 2002 ·Manabu Yanagihara,Hiroyuki Sakai,Yuichi Ota,M. Tanabe,Koji Inoue,(unknown)	5
12	Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes 2001 ·IEICE Transactions on Electronics ·(unknown),(unknown),Manabu Yanagihara,Tsuyoshi Tanaka	1
13	Novel fabrication technique for 0.1 μm T-shaped gate with i-line negative resist and poly(methylmethacrylate) 1999 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Yoshiharu Anda,(unknown),(unknown),(unknown),Manabu Yanagihara,(unknown),Kaoru Inoue,Nobumitsu Hirose,Toshiaki Matsui	2
14	High fmax AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier 1997 ·Solid-State Electronics ·Manabu Yanagihara,Hiroyuki Sakai,(unknown),(unknown)	5
15	Ni/Ti/Pt ohmic contacts to p -GaAs for theheterojunction bipolar transistor process 1996 ·Electronics Letters ·Manabu Yanagihara,(unknown)	6
16	Application of heterojunction FET to power amplifierfor cellular telephone 1994 ·Electronics Letters ·(unknown),(unknown),(unknown),Manabu Yanagihara,(unknown),(unknown),Koji Inoue	4
17	Highly efficient GaAs power MESFETs with n ⁺ -asymmetrical LDD structure 1992 ·Electronics Letters ·Manabu Yanagihara,(unknown),(unknown),Osamu Ishikawa,(unknown)	8
18	An Npn AlGaAs/GaAs Collector-up HBT with an H⁺-Implanted High Resistivity Layer under the External p⁺-GaAs Base 1990 ·Japanese Journal of Applied Physics ·Manabu Yanagihara,(unknown),(unknown),Masanori Inada	3
19	Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor 1988 ·Journal of Applied Physics ·(unknown),Manabu Yanagihara,Masanori Inada	15
20	AlGaAs/GaAs heterojunction bipolar transistors with small size fabricated by a multiple self-alignment process using one mask 1987 ·IEEE Transactions on Electron Devices ·Masanori Inada,(unknown),A. Nakagawa,Manabu Yanagihara,Takashi Hirose,Kazuo Eda	22

About Manabu Yanagihara

Manabu Yanagihara is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 35 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Radio Frequency Integrated Circuit Design (14 papers) and Silicon Carbide Semiconductor Technologies (14 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (690 citations) and Electrical and Electronic Engineering (1.5k citations). Manabu Yanagihara has collaborated with scholars based in Japan, United States and Italy. Frequent co-authors include Yasuhiro Uemoto, Tetsuzo Ueda, Masahiro Hikita, Hisayoshi Matsuo, Hidetoshi Ishida, Tsuyoshi Tanaka, Hiroaki Ueno, Daisuke Ueda, Daisuke Ueda and Tatsuo Morita. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact