Manabu Yanagihara

2.2k total citations · 1 hit paper
35 papers, 1.8k citations indexed

About

Manabu Yanagihara is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Manabu Yanagihara has authored 35 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 23 papers in Condensed Matter Physics and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Manabu Yanagihara's work include GaN-based semiconductor devices and materials (23 papers), Radio Frequency Integrated Circuit Design (14 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Manabu Yanagihara is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Radio Frequency Integrated Circuit Design (14 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Manabu Yanagihara collaborates with scholars based in Japan, United States and Italy. Manabu Yanagihara's co-authors include Yasuhiro Uemoto, Tetsuzo Ueda, Masahiro Hikita, Hidetoshi Ishida, Hisayoshi Matsuo, Tsuyoshi Tanaka, Hiroaki Ueno, Daisuke Ueda, Daisuke Ueda and Tatsuo Morita and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Manabu Yanagihara

34 papers receiving 1.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2007 826 citations Yasuhiro Uemoto, Masahiro Hikita et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Manabu Yanagihara Japan	16	1.5k	1.5k	690	270	250	35	1.8k
Masahiro Hikita Japan	14	1.4k 0.9×	1.2k 0.9×	624 0.9×	192 0.7×	240 1.0×	19	1.6k
Hisayoshi Matsuo Japan	11	1.2k 0.8×	982 0.7×	581 0.8×	179 0.7×	227 0.9×	12	1.3k
Hiroaki Ueno Japan	10	1.0k 0.7×	982 0.7×	508 0.7×	180 0.7×	205 0.8×	19	1.3k
Fabiana Rampazzo Italy	15	1.4k 0.9×	1.2k 0.8×	399 0.6×	353 1.3×	216 0.9×	56	1.5k
Eldad Bahat‐Treidel Germany	25	1.8k 1.2×	1.5k 1.1×	1.0k 1.5×	313 1.2×	431 1.7×	70	2.1k
Daisuke Ueda Japan	6	931 0.6×	815 0.6×	451 0.7×	148 0.5×	172 0.7×	13	1.1k
Tsuyoshi Tanaka Japan	5	946 0.6×	811 0.6×	479 0.7×	145 0.5×	172 0.7×	8	1.0k
Gaofei Tang Hong Kong	22	1.5k 1.0×	1.4k 1.0×	681 1.0×	251 0.9×	309 1.2×	38	1.7k
Min Sun United States	22	1.8k 1.2×	1.7k 1.1×	974 1.4×	347 1.3×	344 1.4×	47	2.1k
Sadahiro Kato Japan	11	925 0.6×	763 0.5×	497 0.7×	120 0.4×	210 0.8×	25	1.0k

Countries citing papers authored by Manabu Yanagihara

Since Specialization

Citations

This map shows the geographic impact of Manabu Yanagihara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Manabu Yanagihara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Manabu Yanagihara more than expected).

Fields of papers citing papers by Manabu Yanagihara

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Manabu Yanagihara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Manabu Yanagihara. The network helps show where Manabu Yanagihara may publish in the future.

Co-authorship network of co-authors of Manabu Yanagihara

This figure shows the co-authorship network connecting the top 25 collaborators of Manabu Yanagihara. A scholar is included among the top collaborators of Manabu Yanagihara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Manabu Yanagihara. Manabu Yanagihara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Okita, Hideyuki, Masahiro Hikita, Takahiro Satô, et al.. (2017). Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors. IEEE Transactions on Electron Devices. 64(3). 1026–1031. 24 indexed citations

Tanaka, Kenichiro, Tatsuo Morita, Masahiro Ishida, et al.. (2017). Reliability of hybrid-drain-embedded gate injection transistor. 54 indexed citations

Otsuka, Nobuyuki, et al.. (2011). Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors. Japanese Journal of Applied Physics. 50(4S). 04DF07–04DF07. 4 indexed citations

Otsuka, Nobuyuki, et al.. (2010). Direct Liquid Cooling Technology for Power Semiconductor Devices. 1 indexed citations

Kuroda, Masayuki, Hidetoshi Ishida, Manabu Yanagihara, et al.. (2008). A K-band AlGaN/GaN-based MMIC amplifier with microstrip lines on sapphire. 5713. 1293–1296. 2 indexed citations

Ueda, Daisuke, Masahiro Hikita, Satoshi Nakazawa, et al.. (2008). Present and future prospects of gan-based power electronics. 15 indexed citations

Ishida, Hidetoshi, Daisuke Shibata, Manabu Yanagihara, et al.. (2008). Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor. IEEE Electron Device Letters. 29(10). 1087–1089. 50 indexed citations

Ishida, Hidetoshi, Daisuke Shibata, Hisayoshi Matsuo, et al.. (2008). GaN-based natural super junction diodes with multi-channel structures. 1–4. 40 indexed citations

Morita, Tatsuo, Manabu Yanagihara, Hidetoshi Ishida, et al.. (2007). 650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor. 865–868. 81 indexed citations

10.

Uemoto, Yasuhiro, Daisuke Shibata, Manabu Yanagihara, et al.. (2007). 8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation. 861–864. 82 indexed citations

11.

Sakai, Hiroyuki, Yuichi Ota, Koji Inoue, et al.. (2002). A millimeter-wave flip-chip IC using micro-bump bonding technology. 408–409,. 6 indexed citations

12.

Yanagihara, Manabu, et al.. (2002). 253-GHz f/sub max/ AlGaAs/GaAs HBT with Ni/Ti/Pt/Ti/Pt-contact and L-shaped base electrode. 807–810. 5 indexed citations

13.

Yanagihara, Manabu, et al.. (2001). Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes. IEICE Transactions on Electronics. 84(10). 1379–1382. 1 indexed citations

14.

Anda, Yoshiharu, et al.. (1999). Novel fabrication technique for 0.1 μm T-shaped gate with i-line negative resist and poly(methylmethacrylate). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(2). 320–322. 2 indexed citations

15.

Yanagihara, Manabu, et al.. (1997). High fmax AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier. Solid-State Electronics. 41(10). 1615–1620. 5 indexed citations

16.

Yanagihara, Manabu, et al.. (1995). Failure mode analysis of HBTs using electrostatic discharge method. Solid-State Electronics. 38(12). 2005–2010. 9 indexed citations

17.

Yanagihara, Manabu, et al.. (1994). Application of heterojunction FET to power amplifierfor cellular telephone. Electronics Letters. 30(11). 906–907. 4 indexed citations

18.

Yanagihara, Manabu, et al.. (1992). Highly efficient GaAs power MESFETs with n ⁺ -asymmetrical LDD structure. Electronics Letters. 28(7). 686–687. 8 indexed citations

19.

Yanagihara, Manabu, et al.. (1988). Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor. Journal of Applied Physics. 64(2). 926–930. 15 indexed citations

20.

Eda, Kazuo, et al.. (1986). Emitter—Base—Collector self-aligned heterojunction bipolar transistors using wet etching process. IEEE Electron Device Letters. 7(12). 694–696. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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