Isabella Rossetto

1.7k citations

49 papers · 1.4k indexed · h-index 19

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 48
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 9
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 37
- Silicon Carbide Semiconductor Technologies 17
- Advancements in Semiconductor Devices and Circuit Design 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 9
- Semiconductor materials and interfaces 4
Materials Chemistry
- ZnO doping and properties 5

Co-authors: Matteo Meneghini Enrico Zanoni Gaudenzio Meneghesso Davide Bisi Stefaan Decoutere Steve Stoffels Carlo De Santi M. Van Hove
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Microelectronics Reliability (12 papers)IEEE Transactions on Electron Devices (9 papers)IEEE Electron Device Letters (4 papers)
Partner nations: Italy Belgium Germany

In The Last Decade

Isabella Rossetto

46 papers receiving 1.3k citations

Peers

Countries citing papers authored by Isabella Rossetto

Since Specialization

Citations

This map shows the geographic impact of Isabella Rossetto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Isabella Rossetto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Isabella Rossetto more than expected).

Fields of papers citing papers by Isabella Rossetto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Isabella Rossetto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Isabella Rossetto. The network helps show where Isabella Rossetto may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Isabella Rossetto, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Isabella Rossetto Line = papers co-authored together Isabella Rossetto links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs IEEE Electron Device Letters ·B Benjamin,Р.М. Чотчаев,Pei‐Guang Wang,向田,H. M. Jeong,Carlo De Santi,Isabella Rossetto,Enrico Zanoni,Gaudenzio Meneghesso,代彭康,Giuseppe Pizzo,Lan Xiang,村上公哉,Maria Eloisa Castagna,F. Iucolano,Matteo Meneghini	2025	0
2	Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation IEEE Journal of the Electron Devices Society ·Pei‐Guang Wang,向田,Xiangke Rong,Carlo De Santi,Matteo Buffolo,E. Canato,Michele Gallo,Lan Xiang,Isabella Rossetto,Cahyono Eko Sugiarto,村上公哉,Ferdinando Iucolano,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2024	3
3	2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal IEEE Transactions on Electron Devices ·Isabella Rossetto,Matteo Meneghini,Carlo De Santi,洪新发,Razia Sultana,G.A.M. Hurkx,J.A. Croon,Jan Šonský,Gaudenzio Meneghesso,Enrico Zanoni	2018	11
4	Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Isabella Rossetto,Matteo Meneghini,Alaleh Tajalli,Stefano Dalcanale,Carlo De Santi,P. Moens,Abhishek Banerjee,Enrico Zanoni,Gaudenzio Meneghesso	2017	109
5	Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs IEEE Transactions on Electron Devices ·Matteo Borga,Matteo Meneghini,Isabella Rossetto,Steve Stoffels,Niels Posthuma,M. Van Hove,Denis Marcon,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2017	43
6	Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin IEEE Transactions on Electron Devices ·Matteo Meneghini,Alessandro Barbato,Isabella Rossetto,勝寿中山,Marco Silvestri,S. Lavanga,Haifeng Sun,Kehinde Ayo-Yussuf,Gaudenzio Meneghesso,Enrico Zanoni	2017	3
7	Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests IEEE Electron Device Letters ·Jie Hu,Steve Stoffels,Ming Zhao,Andrea Natale Tallarico,Isabella Rossetto,Matteo Meneghini,Xuanwu Kang,Benoit Bakeroot,Denis Marcon,B. Kaczer,Stefaan Decoutere,G. Groeseneken	2017	34
8	Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry Padua Research Archive (University of Padova) ·Matteo Meneghini,Isabella Rossetto,Matteo Borga,E. Canato,Carlo De Santi,Fabiana Rampazzo,Gaudenzio Meneghesso,Enrico Zanoni,Steve Stoffels,M. Van Hove,Niels Posthuma,Stefaan Decoutere	2017	27
9	Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level Microelectronics Reliability ·Isabella Rossetto,Matteo Meneghini,E. Canato,Marco Barbato,Steve Stoffels,Niels Posthuma,Stefaan Decoutere,Andrea Natale Tallarico,Gaudenzio Meneghesso,Enrico Zanoni	2017	24
10	GaN HEMTs with p-GaN gate: field- and time-dependent degradation Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Gaudenzio Meneghesso,Matteo Meneghini,Isabella Rossetto,E. Canato,正典紀国,Carlo De Santi,Nicola Trivellin,Enrico Zanoni	2017	9
11	Reliability and failure analysis in power GaN-HEMTs: An overview Padua Research Archive (University of Padova) ·Matteo Meneghini,Isabella Rossetto,Carlo De Santi,Fabiana Rampazzo,Alaleh Tajalli,Alessandro Barbato,Maria Ruzzarin,Matteo Borga,E. Canato,Enrico Zanoni,Gaudenzio Meneghesso	2017	84
12	GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift Research Padua Archive (University of Padua) ·Stefano Dalcanale,Matteo Meneghini,Alaleh Tajalli,Isabella Rossetto,Maria Ruzzarin,Enrico Zanoni,Gaudenzio Meneghesso,P. Moens,Abhishek Banerjee,Marcio Siqueira de Castro	2017	11
13	Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress IEEE Electron Device Letters ·Maria Ruzzarin,Matteo Meneghini,Isabella Rossetto,M. Van Hove,Steve Stoffels,Tian‐Li Wu,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2016	38
14	Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate IEEE Transactions on Electron Devices ·Isabella Rossetto,Matteo Meneghini,Oliver Hilt,Eldad Bahat‐Treidel,Carlo De Santi,Stefano Dalcanale,Joachim Wuerfl,Enrico Zanoni,Gaudenzio Meneghesso	2016	132
15	Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation IEEE Transactions on Electron Devices ·Isabella Rossetto,Matteo Meneghini,洪新发,Razia Sultana,G.A.M. Hurkx,J.A. Croon,Jan Šonský,Gaudenzio Meneghesso,Enrico Zanoni	2016	18
16	Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress Padua Research Archive (University of Padova) ·Isabella Rossetto,Matteo Meneghini,Riccardo Silvestri,Stefano Dalcanale,Enrico Zanoni,Gaudenzio Meneghesso,Oliver Hilt,Eldad Bahat‐Treidel,Joachim Wuerfl	2016	8
17	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate Microelectronics Reliability ·Gaudenzio Meneghesso,Matteo Meneghini,Davide Bisi,Isabella Rossetto,Tian‐Li Wu,M. Van Hove,Denis Marcon,Steve Stoffels,Stefaan Decoutere,Enrico Zanoni	2015	39
18	Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs Microelectronics Reliability ·Isabella Rossetto,Matteo Meneghini,Davide Bisi,Kenzo Inagaki,M. Van Hove,Denis Marcon,Tian‐Li Wu,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2015	12
19	(Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors ECS Transactions ·Enrico Zanoni,Gaudenzio Meneghesso,Matteo Meneghini,Antonio Stocco,Fabiana Rampazzo,Riccardo Silvestri,Isabella Rossetto,N. Ronchi	2011	5
20	ESD sensitivity of a GaAs MMIC microwave power amplifier Microelectronics Reliability ·Augusto Tazzoli,Isabella Rossetto,Enrico Zanoni,WenYa,Amanda Callinan,Gaudenzio Meneghesso	2011	5

About Isabella Rossetto

Isabella Rossetto is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 49 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Semiconductor materials and devices (37 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor Quantum Structures and Devices (9 papers), Ga2O3 and related materials (9 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), ZnO doping and properties (5 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (447 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (236 citations) and Materials Chemistry (183 citations). Isabella Rossetto has collaborated with scholars based in Italy, Belgium and Germany. Frequent co-authors include Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Davide Bisi, Stefaan Decoutere, Steve Stoffels, Carlo De Santi, M. Van Hove, Stefano Dalcanale and Denis Marcon. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Semiconductor Science and Technology and Electronics.

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