Daniel Piedra

3.3k citations

35 papers · 1.7k indexed · h-index 20

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 32
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 11
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies 24
- Semiconductor materials and devices 11
- Advanced DC-DC Converters 4
- Radio Frequency Integrated Circuit Design 2
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 4
Materials Chemistry
- ZnO doping and properties 5

Co-authors: Min Sun Tomás Palacios Yuhao ZhangJie HuHyung‐Seok Lee Tatsuya Fujishima Zhihong Liu M. Azize
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (7 papers)Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (3 papers)
Partner nations: United States Japan Singapore

In The Last Decade

Daniel Piedra

35 papers receiving 1.6k citations

Peers

Countries citing papers authored by Daniel Piedra

Since Specialization

Citations

This map shows the geographic impact of Daniel Piedra's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Piedra with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Piedra more than expected).

Fields of papers citing papers by Daniel Piedra

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Piedra. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Piedra. The network helps show where Daniel Piedra may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Daniel Piedra, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Daniel Piedra Line = papers co-authored together Daniel Piedra links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit IEEE Electron Device Letters ·Yuhao Zhang,Min Sun,Joshua Perozek,Zhihong Liu,Ahmad Zubair,Daniel Piedra,Nadim Chowdhury,Xiang Gao,Kenneth L. Shepard,Tomás Palacios	2018	103
2	AlN metal–semiconductor field-effect transistors using Si-ion implantation Japanese Journal of Applied Physics ·Hironori Okumura,Sami Suihkonen,Jori Lemettinen,Akira Uedono,Yuhao Zhang,Daniel Piedra,Tomás Palacios	2018	51
3	Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation IEEE Electron Device Letters ·Yuhao Zhang,Zhihong Liu,Marko J. Tadjer,Min Sun,Daniel Piedra,Christopher Hatem,Travis J. Anderson,Lunet E. Luna,Anindya Nath,Andrew D. Koehler,Hironori Okumura,Jie Hu,Xu Zhang,Xiang Gao,Boris N. Feigelson,Karl D. Hobart,Tomás Palacios	2017	148
4	GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration IEEE Electron Device Letters ·Ko‐Tao Lee,C. Bayram,Daniel Piedra,E. Sprogis,Hariklia Deligianni,小泉弥栄,HJ Kim,Ajit Paranjpe,Илья Владимирович Дьячков,Ken Shepard,Tomás Palacios,D. K. Sadana	2017	21
5	Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes Applied Physics Letters ·杨泽柱,Min Sun,Daniel Piedra,Kon-Naah Moomin Amos,A. Dadgar,Tomás Palacios	2017	41
6	Materials and processing issues in vertical GaN power electronics Materials Science in Semiconductor Processing ·Jie Hu,Yuhao Zhang,Min Sun,Daniel Piedra,Nadim Chowdhury,Tomás Palacios	2017	127
7	Trench formation and corner rounding in vertical GaN power devices Applied Physics Letters ·杨泽柱,Min Sun,Zhihong Liu,Daniel Piedra,Jie Hu,Xiang Gao,Tomás Palacios	2017	91
8	High-yield large area MoS2 technology: Material, device and circuits co-optimization IEEE Conference Proceedings ·أحمد اللوغانی,Dina El-Damak,Ujwal Radhakrishna,Ahmad Zubair,Daniel Piedra,Xianzhang Ling,R. D. Anderson,Michael St. Jacques,Н. Е. Каруби,D.A. Antoniadis,Jun Kong,Anantha P. Chandrakasan,Orujova Mehpara	2016	3
9	High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes IEEE Electron Device Letters ·Yuhao Zhang,Daniel Piedra,Min Sun,Kon-Naah Moomin Amos,A. Dadgar,Lili Yu,Tomás Palacios	2016	72
10	Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings The HKU Scholars Hub (University of Hong Kong) ·Yang Zhang,Min Sun,GA Cloherty,Daniel Piedra,Ming Pan,Xiaoqin Gao,Yuxuan Lin,Ahmad Zubair,Lili Yu,Tomás Palacios	2016	71
11	Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes IEEE Transactions on Electron Devices ·杨泽柱,Min Sun,Hiu Yung Wong,Yuxuan Lin,Puneet Srivastava,Christopher Hatem,M. Azize,Daniel Piedra,Lili Yu,Takamichi Sumitomo,Nelson Braga,R. Mickevičius,Tomás Palacios	2015	138
12	Impact of Al<sub>2</sub>O<sub>3</sub> Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Sameer Joglekar,M. Azize,Julia M. Portmann,Daniel Piedra,Silvija Gradečak,Tomás Palacios	2015	27
13	A new process approach for slant field plates in GaN-based high-electron-mobility transistors Japanese Journal of Applied Physics ·Tetsuya Suemitsu,M. Pechtold,Lydie Gualandris,Michael J. Nacinovich,Teresa Tyson,Taiichi Otsuji,Daniel Piedra,Tomás Palacios	2015	12
14	GaN-on-Si Vertical Schottky and p-n Diodes IEEE Electron Device Letters ·Yuhao Zhang,Min Sun,Daniel Piedra,M. Azize,Xu Zhang,Tatsuya Fujishima,Tomás Palacios	2014	162
15	Correlation of on‐wafer 400 V dynamic behavior and trap characteristics of GaN‐HEMTs physica status solidi (a) ·Tadahiro Imada,Daniel Piedra,T. Kikkawa,Tomás Palacios	2014	5
16	Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN Solid-State Electronics ·M. Pechtold,Lydie Gualandris,Teresa Tyson,Daniel Piedra,Tomás Palacios,Taiichi Otsuji,Tetsuya Suemitsu	2014	16
17	Scaling of InAlN/GaN power transistors Daniel Piedra,Hyung‐Seok Lee,Tomás Palacios,Xiang Gao,Shiping Guo	2012	1
18	Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate Applied Physics Express ·Min Sun,Hyung‐Seok Lee,Bin Lu,Daniel Piedra,Tomás Palacios	2012	32
19	3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier IEEE Electron Device Letters ·Hyung‐Seok Lee,Daniel Piedra,Min Sun,Xiang Gao,Shiping Guo,Tomás Palacios	2012	126
20	GaN power electronics Bin Lu,Daniel Piedra,Tomás Palacios	2010	11

About Daniel Piedra

Daniel Piedra is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 35 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (32 papers), Silicon Carbide Semiconductor Technologies (24 papers), Ga2O3 and related materials (11 papers), Semiconductor materials and devices (11 papers), ZnO doping and properties (5 papers), Semiconductor Quantum Structures and Devices (4 papers), Advanced DC-DC Converters (4 papers) and Radio Frequency Integrated Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (784 citations), Electrical and Electronic Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (288 citations) and Materials Chemistry (290 citations). Daniel Piedra has collaborated with scholars based in United States, Japan and Singapore. Frequent co-authors include Min Sun, Tomás Palacios, Yuhao Zhang, Tomás Palacios, Jie Hu, Hyung‐Seok Lee, Tatsuya Fujishima, Zhihong Liu, M. Azize and Xu Zhang. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Applied Physics Express and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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