H. Blanck

996 citations

78 papers · 788 indexed · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Power Amplifier Design

Papers in

Condensed Matter Physics 52
- GaN-based semiconductor devices and materials 52
Electrical and Electronic Engineering 73
- Radio Frequency Integrated Circuit Design 35
- Semiconductor materials and devices 33
- Silicon Carbide Semiconductor Technologies 17
- Semiconductor Lasers and Optical Devices 9
- Advanced Power Amplifier Design 6

Co-authors: Niklas Rorsman S.L. Delage Anna Malmros C. Brylinski D. Floriot Benoît Lambert E. Chartier M.A. di Forte-Poisson
Journals: Microelectronics Reliability (12 papers)IEEE Transactions on Electron Devices (4 papers)Semiconductor Science and Technology (4 papers)Electronics Letters (3 papers)IEEE Electron Device Letters (2 papers)
Partner nations: France Germany Italy

In The Last Decade

H. Blanck

73 papers receiving 743 citations

Peers

Countries citing papers authored by H. Blanck

Since Specialization

Citations

This map shows the geographic impact of H. Blanck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Blanck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Blanck more than expected).

Fields of papers citing papers by H. Blanck

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Blanck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Blanck. The network helps show where H. Blanck may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Blanck, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Blanck Line = papers co-authored together H. Blanck links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	GH10-UMS 100 nm GaN Technology Susanna Säisä Borreill, 万冬君, Pierre Denis, Mayra Alejandra Revello Silva, A. Bessemoulin, Teng Zheng-qiang, V. VILVA, Shambhavi Dikshit, Jonathan Leroy, Widya Vani Sitepu, U. Brauchle, H. Blanck	2025	0
2	Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Canon Lau, Fabiana Rampazzo, Carlo De Santi, Gracia Aída Herrera González, Gaudenzio Meneghesso, Matteo Meneghini, H. Blanck, Fang Ti-jun, R Rozman, Ding-Yuan Chen, Ph. Berge, Jr‐Tai Chen, Enrico Zanoni	2023	5
3	Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs Microelectronics Reliability ·Lucas Tiago de Caravlho, Carlo De Santi, Fabiana Rampazzo, Д В Ребриков, Fang Ti-jun, R Rozman, H. Blanck, Benoît Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	2022	2
4	Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress Microelectronics Reliability ·Canon Lau, Fabiana Rampazzo, Matteo Meneghini, Nicola Modolo, Carlo De Santi, H. Blanck, U. Brauchle, R Rozman, Fang Ti-jun, Olof Kordina, Jr‐Tai Chen, De Sa Mere, C. Lacam, S. Piotrowicz, Gaudenzio Meneghesso, Enrico Zanoni	2021	4
5	On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion IEEE Transactions on Electron Devices ·吉則佐藤, Matteo Meneghini, Fabiana Rampazzo, C. G. Fenwick, Jung-Ha Kim, Fang Ti-jun, P. Maulaz, Benoît Lambert, Zhang Wengai, H. Blanck, Andreas Graff, Frank Altmann, Chamodi Pathirana, David Poppitz, Gaudenzio Meneghesso, Enrico Zanoni	2020	2
6	InAlGaN/GaN HEMT technology for Ka band applications S.L. Delage, S. Piotrowicz, N. V. Saresh, De Sa Mere, Piero Gamarra, C. Dua, Muhammad Nailil Fahmi Fatah, N. Michel, H. H. Roberts James M. Coleman, A. Wojtus, M. Oualli, C. Lacam, P. Krishanan, H. Blanck, 齐智英, D. Floriot	2018	2
7	Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs IEEE Electron Device Letters ·K. R. Subisha, James W. Pomeroy, Benoît Lambert, P. Maulaz, H. Blanck, Martin Kuball	2016	33
8	GH25-10: New qualified power GaN HEMT process from technology to product overview D. Floriot, Yeun-Jun Kim, M. Camiade, P. Krishanan, Benoît Lambert, Reza Mirmiran, H. Blanck, Fang Ti-jun, M Raitt, H. Jung, Tripti Shah, Kazuo Nomoto	2014	26
9	Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·P. Maulaz, Auf Anfrage, Fang Ti-jun, M Raitt, بن فليس لخضر, H. Blanck, T. Rödle, 笑美子吉住	2014	3
10	0.1µm GaAs pHEMT technology and associated modelling for millimeter wave low noise amplifiers European Microwave Integrated Circuit Conference ·Fang-Fang Zhou, U. Brauchle, Yao Qing-lin, Boren Yao, 齐智英, M. Camiade, H. Blanck, D. Floriot	2012	9
11	New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit European Microwave Integrated Circuit Conference ·D. Floriot, H. Blanck, Cosima Buccoliero, Hibiki Orio, M. Camiade, L. Griffith, M Raitt, H. Jung, Benoît Lambert, 贾华, Zhang Wengai, Shabanam Khatoon, U. Brauchle, Summer Sherrod, Kazuo Nomoto	2012	17
12	Reliability studies on GaN HEMTs with sputtered Iridium gate module Microelectronics Reliability ·R. Lossy, H. Blanck, Joachim Würfl	2012	7
13	Novel packaging solutions for GaN power electronics: Silver-diamond composite packages Mustapha Faqir, Tim Batten, T. Mrotzek, Natalia Izaguirre Lizarraga, Berenice Vallejo-Solano, N. T. Farron, 石田創士, Summer Sherrod, H. Blanck, 俊益荘司, O. Vendier, Martin Kuball	2010	9
14	Flip-chip mounted 26 V GalnP/GaAs power UBTs P. Kurpas, A. Maaßdorf, Т.В. КУДРИНСКАЯ, John Deckbar, P. Heymann, W Lee, Frank Schnieder, Muhammad Adi Saputra, Wilhemina Van Dyke, H. Blanck, Guo Su-ping, Connor Parrott, Joachim Würfl	2005	7
15	Thermal management of power HBT in pulsed operating mode 2005 European Microwave Conference ·D. Floriot, J. Jacquet, E. Chartier, J. G. B., Philippe Eudeline, Ms. Indrakumari, H. Blanck	2005	5
16	High efficiency InGaP/GaAs HBT power amplifiers H. Blanck, S.L. Delage, S. Cassette, D. Floriot, E. Chartier, M.A. diForte-Poisson, Andrew Coors, Paul Andrew Bourne	2002	1
17	Collector-up InGaP/GaAs-double heterojunction bipolartransistors with high f _max Electronics Letters ·M. Dardeno, S.L. Delage, M.A. diForte-Poisson, E. Chartier, H. Blanck, H.L. Hartnagel	1997	4
18	Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies IEEE Transactions on Microwave Theory and Techniques ·Глушач Наталья Николаевна, L. Escotte, R. Plana, J. Graffeuil, S.L. Delage, H. Blanck	1995	33
19	GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits Materials Science and Engineering B ·M.A. di Forte-Poisson, C. Brylinski, S.L. Delage, H. Blanck, D. Floriot, S. Cassette, E. Chartier, Dirk Pons, Alexander Huber	1994	8
20	Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor Electronics Letters ·R. Plana, J. Graffeuil, S.L. Delage, H. Blanck, M.A. di Forte-Poisson, C. Brylinski, E. Chartier	1992	22

About H. Blanck

H. Blanck is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 78 papers that have together received 788 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (52 papers), Radio Frequency Integrated Circuit Design (35 papers), Semiconductor materials and devices (33 papers), Semiconductor Quantum Structures and Devices (24 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor Lasers and Optical Devices (9 papers), Semiconductor materials and interfaces (6 papers) and Advanced Power Amplifier Design (6 papers). The work is most often cited by research in Condensed Matter Physics (503 citations), Electrical and Electronic Engineering (693 citations), Atomic and Molecular Physics, and Optics (271 citations), Electronic, Optical and Magnetic Materials (120 citations) and Materials Chemistry (96 citations). H. Blanck has collaborated with scholars based in France, Germany and Italy. Frequent co-authors include Niklas Rorsman, S.L. Delage, Anna Malmros, C. Brylinski, D. Floriot, Benoît Lambert, E. Chartier, M.A. di Forte-Poisson, J. Graffeuil and R. Plana. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, Semiconductor Science and Technology, Electronics Letters and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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