P. Parikh

5.1k total citations · 3 hit papers
53 papers, 3.9k citations indexed

About

P. Parikh is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Parikh has authored 53 papers receiving a total of 3.9k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 38 papers in Condensed Matter Physics and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Parikh's work include GaN-based semiconductor devices and materials (38 papers), Radio Frequency Integrated Circuit Design (25 papers) and Semiconductor materials and devices (23 papers). P. Parikh is often cited by papers focused on GaN-based semiconductor devices and materials (38 papers), Radio Frequency Integrated Circuit Design (25 papers) and Semiconductor materials and devices (23 papers). P. Parikh collaborates with scholars based in United States, United Kingdom and China. P. Parikh's co-authors include Yifeng Wu, Umesh K. Mishra, M. Moore, T. Wisleder, A. Saxler, P. Chavarkar, B.P. Keller, R.P. Smith, S.T. Sheppard and D. Kapolnek and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and IEEE Journal of Solid-State Circuits.

In The Last Decade

P. Parikh

49 papers receiving 3.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

AlGaN/GaN HEMTs-an overview of device operation and applications

2002 1.7k citations Umesh K. Mishra, P. Parikh et al. profile →
30-W/mm GaN HEMTs by Field Plate Optimization

2004 881 citations Yifeng Wu, A. Saxler et al. IEEE Electron Device Letters profile →
Very-high power density AlGaN/GaN HEMTs

2001 466 citations Yifeng Wu, P. Parikh et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Parikh United States	19	3.6k	2.9k	1.4k	1.0k	876	53	3.9k
J. Kuzmı́k Slovakia	29	2.7k 0.8×	2.2k 0.8×	1.3k 0.9×	703 0.7×	660 0.8×	135	3.1k
S.T. Sheppard United States	17	2.4k 0.7×	2.3k 0.8×	764 0.6×	744 0.7×	503 0.6×	54	2.9k
Alessandro Chini Italy	32	3.8k 1.0×	3.2k 1.1×	1.3k 1.0×	1.1k 1.1×	686 0.8×	142	4.1k
A. Saxler United States	28	3.2k 0.9×	2.1k 0.7×	1.5k 1.1×	1.0k 1.0×	1.1k 1.2×	87	3.8k
Srabanti Chowdhury United States	34	2.2k 0.6×	2.1k 0.7×	1.2k 0.9×	408 0.4×	1.0k 1.1×	157	3.0k
E. Muñoz Spain	29	2.4k 0.7×	1.2k 0.4×	1.5k 1.1×	926 0.9×	1.1k 1.2×	114	3.1k
S. Heikman United States	35	4.4k 1.2×	3.1k 1.1×	2.2k 1.6×	1.0k 1.0×	1.2k 1.4×	80	4.8k
Tomoyoshi Mishima Japan	30	2.0k 0.5×	2.3k 0.8×	1.1k 0.8×	1.1k 1.0×	925 1.1×	182	3.2k
Frank Brunner Germany	28	2.2k 0.6×	1.5k 0.5×	1.2k 0.9×	444 0.4×	704 0.8×	135	2.5k
Farid Medjdoub France	28	2.3k 0.6×	1.8k 0.6×	1.1k 0.8×	575 0.6×	492 0.6×	113	2.5k

Countries citing papers authored by P. Parikh

Since Specialization

Citations

This map shows the geographic impact of P. Parikh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Parikh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Parikh more than expected).

Fields of papers citing papers by P. Parikh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Parikh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Parikh. The network helps show where P. Parikh may publish in the future.

Co-authorship network of co-authors of P. Parikh

This figure shows the co-authorship network connecting the top 25 collaborators of P. Parikh. A scholar is included among the top collaborators of P. Parikh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Parikh. P. Parikh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Mishra, U. K., Davide Bisi, Geetak Gupta, Carl J. Neufeld, & P. Parikh. (2024). The Future of GaN is Also High Voltage, High Current, and Bidirectional: (Invited). 1–4. 1 indexed citations

2.

Gupta, Geetak, Masahito Kanamura, Brian L. Swenson, et al.. (2022). 1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications. 2022 International Electron Devices Meeting (IEDM). 35.2.1–35.2.4. 11 indexed citations

3.

Bisi, Davide, et al.. (2022). Short-Circuit Capability with GaN HEMTs : Invited. 5 indexed citations

4.

Wu, Yifeng, Likun Shen, L. McCarthy, et al.. (2020). 5000+ Wafers of 650 V Highly Reliable GaN HEMTs on Si Substrates: Wafer Breakage and Backside Contamination Results. 1–3.

5.

Wu, Yifeng, Likun Shen, Peter Smith, et al.. (2019). 650 V Highly Reliable GaN HEMTs on Si Substrates over multiple generations: Expanding usage of a mature 150 mm Si Foundry. 1–5. 1 indexed citations

6.

Kikkawa, T., Kenji Imanishi, Yifeng Wu, et al.. (2015). Commercialization and reliability of 600 V GaN power switches. 6C.1.1–6C.1.6. 29 indexed citations

7.

Parikh, P., Yifeng Wu, & Likun Shen. (2013). Commercialization of high 600V GaN-on-silicon power HEMTs and diodes. 1–5. 25 indexed citations

8.

Wu, Yilin, A. Saxler, M. Moore, et al.. (2005). Field-plated GaN HEMTs and amplifiers. 4 pp.–4 pp.. 9 indexed citations

9.

Wu, Yilin, M. Moore, T. Wisleder, et al.. (2004). NOISE CHARACTERISTICS OF FIELD-PLATED GAN HEMTS. International Journal of High Speed Electronics and Systems. 14(3). 816–818. 6 indexed citations

10.

Wu, Yifeng, A. Saxler, T. Wisleder, et al.. (2004). Linearity performance of GaN HEMTs with field plates. 35–36. 11 indexed citations

11.

Parikh, P., Yifeng Wu, M. Moore, et al.. (2003). High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs. 415–421. 25 indexed citations

12.

Wu, Yifeng, P. Chavarkar, M. Moore, P. Parikh, & U. K. Mishra. (2003). Linearity and gain characteristics of AlGaN/GaN HEMTs. 697–699. 7 indexed citations

13.

Jenkins, T., L. Kehias, P. Parikh, et al.. (2002). Linearity of high Al-content AlGaN/GaN HEMTs. 201–202. 5 indexed citations

14.

Mishra, Umesh K., L. McCarthy, Y. Smorchkova, et al.. (2002). AlGaN-GaN HEMTs and HBTs for microwave power. 35–36.

15.

Wu, Yifeng, P. Chavarkar, M. Moore, et al.. (2002). A 50-W AlGaN/GaN HEMT amplifier. 375–376. 12 indexed citations

16.

Wu, Yifeng, P. Chavarkar, M. Moore, P. Parikh, & Umesh K. Mishra. (2002). Bias-dependent performance of high-power AlGaN/GaN HEMTs. 17.2.1–17.2.3. 16 indexed citations

17.

Hu, Evelyn L., et al.. (1997). Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface. Applied Physics Letters. 70(10). 1293–1295. 13 indexed citations

18.

Parikh, P., Wei Jiang, P. Chavarkar, et al.. (1996). A new FET-based integrated circuit technology: the SASSFET. IEEE Electron Device Letters. 17(7). 375–377. 1 indexed citations

19.

Parikh, P., et al.. (1996). Hydrogenation of GaAs MISFETs with Al ₂ O ₃ as the gate insulator. Electronics Letters. 32(18). 1724–1726. 18 indexed citations

20.

Shealy, J.B., et al.. (1995). Junction heterostructures for high performance electronics. Solid-State Electronics. 38(9). 1607–1610. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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