P. Parikh

5.1k citations

53 papers · 3.9k indexed · 3 hit papers · h-index 19

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 38
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 4
Electrical and Electronic Engineering top 1%
- Radio Frequency Integrated Circuit Design 25
- Semiconductor materials and devices 23
- Silicon Carbide Semiconductor Technologies 18
- Semiconductor Lasers and Optical Devices 11
- Advancements in Semiconductor Devices and Circuit Design 5
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 19
Materials Chemistry top 5%

Co-authors: Yifeng Wu Umesh K. Mishra M. Moore T. Wisleder A. Saxler P. Chavarkar B.P. Keller R.P. Smith
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (4 papers)Applied Physics Letters (1 paper)IEEE Journal of Solid-State Circuits (1 paper)
Partner nations: United States United Kingdom China

In The Last Decade

P. Parikh

49 papers receiving 3.7k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

2004 IEEE Electron Device Letters
2002 Proceedings of the IEEE
2001 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by P. Parikh

Since Specialization

Citations

This map shows the geographic impact of P. Parikh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Parikh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Parikh more than expected).

Fields of papers citing papers by P. Parikh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Parikh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Parikh. The network helps show where P. Parikh may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Parikh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Parikh Line = papers co-authored together P. Parikh links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The Future of GaN is Also High Voltage, High Current, and Bidirectional: (Invited) U. K. Mishra,Davide Bisi,Geetak Gupta,Carl J. Neufeld,P. Parikh	2024	1
2	1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications 2022 International Electron Devices Meeting (IEDM) ·Geetak Gupta,Masahito Kanamura,Brian L. Swenson,Carl J. Neufeld,T. Hosoda,P. Parikh,R. Lal,Umesh K. Mishra	2022	11
3	5000+ Wafers of 650 V Highly Reliable GaN HEMTs on Si Substrates: Wafer Breakage and Backside Contamination Results Hoon Jung Jone,Yifeng Wu,Likun Shen,L. McCarthy,P. Parikh,David M. Rhodes,A. Atabey,C Zhang,Kenji Imanishi,М. Олексів,de Ardila M,(unknown)	2020	0
4	650 V Highly Reliable GaN HEMTs on Si Substrates over multiple generations: Expanding usage of a mature 150 mm Si Foundry Hoon Jung Jone,Yifeng Wu,Likun Shen,Peter Smith,Xiangyong MEN,L. McCarthy,Piercey-Normore,P. Parikh,A. Atabey,C Zhang,Kenji Imanishi,de Ardila M,(unknown),М. Олексів	2019	1
5	Commercialization and reliability of 600 V GaN power switches T. Kikkawa,A. Atabey,Neil Barretto,Kenji Imanishi,М. Олексів,Yifeng Wu,Likun Shen,S. Otman,Лапин Василий Николаевич,Hoon Jung Jone,Peter Smith,Xiangyong MEN,L. McCarthy,Piercey-Normore,Rakesh Lal,Umesh K. Mishra,P. Parikh	2015	29
6	Commercialization of high 600V GaN-on-silicon power HEMTs and diodes P. Parikh,Yifeng Wu,Likun Shen	2013	25
7	40-W/mm Double Field-plated GaN HEMTs Yifeng Wu,M. Moore,A. Saxler,T. Wisleder,P. Parikh	2006	271
8	Linearity performance of GaN HEMTs with field plates Yifeng Wu,A. Saxler,T. Wisleder,M. Moore,R.P. Smith,S.T. Sheppard,P. Chavarkar,P. Parikh	2004	11
9	NOISE CHARACTERISTICS OF FIELD-PLATED GAN HEMTS International Journal of High Speed Electronics and Systems ·Yilin Wu,M. Moore,T. Wisleder,P. Chavarkar,P. Parikh,A. Saxler	2004	6
10	Linearity and gain characteristics of AlGaN/GaN HEMTs Yifeng Wu,P. Chavarkar,M. Moore,P. Parikh,U. K. Mishra	2003	7
11	High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs P. Parikh,Yifeng Wu,M. Moore,P. Chavarkar,Umesh K. Mishra,R. Neidhard,L. Kehias,T. Jenkins	2003	25
12	Linearity of high Al-content AlGaN/GaN HEMTs T. Jenkins,L. Kehias,P. Parikh,Yifeng Wu,P. Chavarkar,M. Moore,Umesh K. Mishra	2002	5
13	AlGaN-GaN HEMTs and HBTs for microwave power Umesh K. Mishra,S. van Tol,L. McCarthy,Y. Smorchkova,S. Keller,Huili Grace Xing,N. Zhang,James S. Speck,R.A. York,Steven P. DenBaars,Yifeng Wu,P. Parikh,P. Chavarkar	2002	0
14	A 50-W AlGaN/GaN HEMT amplifier Yifeng Wu,P. Chavarkar,M. Moore,P. Parikh,B.P. Keller,Umesh K. Mishra	2002	12
15	Bias-dependent performance of high-power AlGaN/GaN HEMTs Yifeng Wu,P. Chavarkar,M. Moore,P. Parikh,Umesh K. Mishra	2002	16
16	Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology IEEE Journal of Solid-State Circuits ·T. Jenkins,L. Kehias,P. Parikh,J. P. Ibbetson,Umesh K. Mishra,Saumya Rajesh Parashar,Minh Vuong Le,J. Pusl,Kaustubh Pandurang Jagtap	1999	3
17	Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface Applied Physics Letters ·Hasan Al Malack,Evelyn L. Hu,Jingping Zhang,Ying‐Lan Chang,P. Parikh,Umesh K. Mishra	1997	13
18	Hydrogenation of GaAs MISFETs with Al ₂ O ₃ as the gate insulator Electronics Letters ·P. Parikh,M.W. Hoogeveen,E. I. Kravczova,Evelyn L. Hu,Umesh K. Mishra	1996	18
19	A new FET-based integrated circuit technology: the SASSFET IEEE Electron Device Letters ·P. Parikh,Wei Jiang,P. Chavarkar,Jochem Lemain,B.P. Keller,Steven P. DenBaars,Umesh K. Mishra	1996	1
20	Junction heterostructures for high performance electronics Solid-State Electronics ·J.B. Shealy,Wei Jiang,P. Parikh,Demerew Getaneh,Umesh K. Mishra	1995	2

About P. Parikh

P. Parikh is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 53 papers that have together received 3.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (38 papers), Radio Frequency Integrated Circuit Design (25 papers), Semiconductor materials and devices (23 papers), Semiconductor Quantum Structures and Devices (19 papers), Silicon Carbide Semiconductor Technologies (18 papers), Semiconductor Lasers and Optical Devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Ga2O3 and related materials (4 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (1.4k citations) and Electrical and Electronic Engineering (2.9k citations). P. Parikh has collaborated with scholars based in United States, United Kingdom and China. Frequent co-authors include Yifeng Wu, Umesh K. Mishra, M. Moore, T. Wisleder, A. Saxler, P. Chavarkar, B.P. Keller, R.P. Smith, S.T. Sheppard and D. Kapolnek. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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