Steven P. DenBaars

67.3k citations

1.2k papers · 56.2k indexed · 16 hit papers · h-index 117

Condensed Matter Physics top 0.01%
Electrical and Electronic Engineering top 0.02%
Materials Chemistry top 0.05%
Atomic and Molecular Physics, and Optics top 0.01%
Electronic, Optical and Magnetic Materials top 0.02%

Co-authors: James S. Speck Shuji Nakamura Umesh K. Mishra S. Keller P. Fini Feng Wu B.P. Keller P. Kozodoy
Topics: GaN-based semiconductor devices and materials (1.0k papers)Semiconductor Quantum Structures and Devices (486 papers)Ga2O3 and related materials (349 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Physical Review Letters Advanced Materials Nature Communications
Partner nations: United States Japan France

In The Last Decade

Steven P. DenBaars

1.2k papers receiving 54.1k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Prospects for LED lighting

2009 1.9k citations James S. Speck, Steven P. DenBaars et al. profile →
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

1993 1.3k citations Steven P. DenBaars et al. Applied Physics Letters profile →
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

2004 1.1k citations Steven P. DenBaars, Shuji Nakamura et al. Applied Physics Letters profile →
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2000 890 citations J. P. Ibbetson, P. Fini et al. Applied Physics Letters profile →
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

1996 732 citations S. Keller, Steven P. DenBaars et al. Applied Physics Letters profile →
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

1997 629 citations Umesh K. Mishra, Steven P. DenBaars et al. Applied Physics Letters profile →
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

1998 614 citations S. Keller, Steven P. DenBaars et al. Applied Physics Letters profile →
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

2006 553 citations P. Fini, S. Keller et al. profile →
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

2006 367 citations S. Keller, Steven P. DenBaars et al. profile →
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

2013 361 citations Steven P. DenBaars, Daniel Feezell et al. profile →
Consequences of Optimal Bond Valence on Structural Rigidity and Improved Luminescence Properties in Sr_xBa_2–xSiO₄:Eu²⁺ Orthosilicate Phosphors

2014 358 citations Steven P. DenBaars et al. profile →
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

2013 287 citations Daniel Feezell, James S. Speck et al. profile →
High-brightness polarized light-emitting diodes

2012 222 citations Shuji Nakamura, Steven P. DenBaars et al. profile →
High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

2007 211 citations Hitoshi Sato, Natalie Fellows et al. Japanese Journal of Applied Physics profile →
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

2009 205 citations Shuji Nakamura, Steven P. DenBaars et al. profile →
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

2005 197 citations Feng Wu, Steven P. DenBaars et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by Steven P. DenBaars

Since Specialization

Citations

This map shows the geographic impact of Steven P. DenBaars's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steven P. DenBaars with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steven P. DenBaars more than expected).

Fields of papers citing papers by Steven P. DenBaars

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steven P. DenBaars. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steven P. DenBaars. The network helps show where Steven P. DenBaars may publish in the future.

Co-authorship network of co-authors of Steven P. DenBaars

This figure shows the co-authorship network connecting the top 25 collaborators of Steven P. DenBaars. A scholar is included among the top collaborators of Steven P. DenBaars based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Steven P. DenBaars. Steven P. DenBaars is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Enhanced emission efficiency and directionality in InGaN/GaN microLEDs laterally enclosed by distributed Bragg reflectors 2025 ·Optics Express ·R. Chao,Stephen Gee,(unknown),(unknown),(unknown),(unknown),(unknown),Shuji Nakamura,Jon A. Schuller,Steven P. DenBaars	0
2	Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC 2025 ·Applied Physics Letters ·(unknown),(unknown),Michael Iza,Abdullah Alharbi,(unknown),Shuji Nakamura,U. K. Mishra,S. Keller,Steven P. DenBaars	0
3	Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects 2024 ·Applied Physics Letters ·(unknown),(unknown),(unknown),Feng Wu,Shuji Nakamura,Steven P. DenBaars,James S. Speck,S. Marcinkevičius	4
4	Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective 2024 ·APL Materials ·Panpan Li,(unknown),Matthew S. Wong,Yifan Yao,Hongjian Li,(unknown),Jordan M. Smith,Mike Iza,Shuji Nakamura,Steven P. DenBaars	10
5	Blue GaN-based DFB laser diode with sub-MHz linewidth 2024 ·Optics Express ·(unknown),(unknown),(unknown),Theodore J. Morin,Joel Guo,Jiaao Zhang,(unknown),Heming Wang,Andreas Boes,Shuji Nakamura,John E. Bowers,Steven P. DenBaars	5
6	Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror 2023 ·Applied Physics Express ·(unknown),Jared A. Kearns,Stephen Gee,(unknown),(unknown),(unknown),Steven P. DenBaars,Shuji Nakamura	2
7	InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss 2022 ·Crystals ·(unknown),(unknown),(unknown),(unknown),Haojun Zhang,Daniel A. Cohen,Michael J. Gordon,Steven P. DenBaars,Shuji Nakamura	1
8	Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer 2022 ·Crystals ·(unknown),Jordan M. Smith,(unknown),(unknown),(unknown),Matthew S. Wong,Michael J. Gordon,Steven P. DenBaars,Shuji Nakamura	11
9	Semipolar {202¯1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing 2021 ·Crystals ·(unknown),(unknown),(unknown),(unknown),Matthew S. Wong,Hongjian Li,(unknown),Shuji Nakamura,Steven P. DenBaars	2
10	Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN 2019 ·Semiconductor Science and Technology ·Shubhra S. Pasayat,Chirag Gupta,(unknown),Daniel A. Cohen,Steven P. DenBaars,Shuji Nakamura,S. Keller,Umesh K. Mishra,(unknown)	35
11	Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region 2019 ·Japanese Journal of Applied Physics ·(unknown),Daniel A. Cohen,(unknown),Shuji Nakamura,Steven P. DenBaars	11
12	Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template 2019 ·Crystal Growth & Design ·(unknown),(unknown),(unknown),Ahmad Shuhaimi Abu Bakar,Steven P. DenBaars,Azzuliani Supangat	9
13	Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition 2019 ·Semiconductor Science and Technology ·(unknown),Bastien Bonef,Shuji Nakamura,James S. Speck,Steven P. DenBaars,S. Keller	4
14	Semipolar ( 2021¯ ) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication 2019 ·Applied Physics Express ·Chun Hong Kang,Guangyu Liu,Changmin Lee,Omar Alkhazragi,(unknown),Kuang‐Hui Li,(unknown),Tien Khee Ng,James S. Speck,Shuji Nakamura,Steven P. DenBaars,Boon S. Ooi	43
15	Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes 2018 ·Applied Physics Letters ·Morteza Monavarian,Arman Rashidi,Andrew Aragon,Mohsen Nami,Sang Ho Oh,Steven P. DenBaars,Daniel Feezell	25
16	High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum 2017 ·Semiconductor Science and Technology ·Benjamin P. Yonkee,Erin C. Young,Steven P. DenBaars,James S. Speck,Shuji Nakamura	3
17	High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate 2007 ·physica status solidi (RRL) - Rapid Research Letters ·Hitoshi Sato,Anurag Tyagi,Hong Zhong,Natalie Fellows,Roy B. Chung,Makoto Saitô,Kenji Fujito,James S. Speck,Steven P. DenBaars,Shuji Nakamura	90
18	Characteristics of sampled grating DBR lasers with integrated semicondutor optical amplifiers and electroabsorption modulators 2000 ·Optical Fiber Communication Conference ·G.A. Fish,B. Mason,V. Kaman,Jonathon S. Barton,L.A. Coldren,Steven P. DenBaars,John E. Bowers	6
19	Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer 1999 ·MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand,N. Zhang,Lingyan Zhao,Yuval Golan,S. J. Rosner,G. Girolami,P. Fini,J. P. Ibbetson,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra	110
20	Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD 1998 ·MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand,J. P. Ibbetson,P. Fini,P. Kozodoy,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra	71

About Steven P. DenBaars

Steven P. DenBaars is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 1.2k papers that have together received 56.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (1.0k papers), Semiconductor Quantum Structures and Devices (486 papers) and Ga2O3 and related materials (349 papers). The work is most often cited by research in Condensed Matter Physics (43.2k citations), Electronic, Optical and Magnetic Materials (19.2k citations) and Atomic and Molecular Physics, and Optics (20.1k citations). Steven P. DenBaars has collaborated with scholars based in United States, Japan and France. Frequent co-authors include James S. Speck, Shuji Nakamura, Umesh K. Mishra, S. Keller, P. Fini, Feng Wu, B.P. Keller, P. Kozodoy, Siddha Pimputkar and P. M. Petroff. Their work appears in journals such as Physical Review Letters, Advanced Materials and Nature Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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