Tomás Palacios

35.6k citations

377 papers · 26.8k indexed · 15 hit papers · h-index 76

Impact in

Condensed Matter Physics top 0.05%
- GaN-based semiconductor devices and materials
Materials Chemistry top 0.1%
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials

Papers in

Condensed Matter Physics 241
- GaN-based semiconductor devices and materials 240
Electronic, Optical and Magnetic Materials 93
- Ga2O3 and related materials 88

Co-authors: Jing Kong Allen Hsu M. S. Dresselhaus Lili Yu Yi‐Hsien Lee Yuhao Zhang Ahmad Zubair Yumeng Shi
Journals: IEEE Electron Device Letters (53 papers)Applied Physics Letters (33 papers)IEEE Transactions on Electron Devices (20 papers)Nano Letters (17 papers)Japanese Journal of Applied Physics (9 papers)
Partner nations: United States Japan Spain

In The Last Decade

Tomás Palacios

365 papers receiving 26.1k citations

Hit Papers

15 papers align trajectories log scale

Adaptive tactile interaction transfer via digitally embroidered smart gloves 2024 · 60 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2024 Nature Communications
2023 Nature Nanotechnology
2021 Journal of Applied Physics
2021 Nature Electronics
2019 Nature
2016 Nano Letters
2016 Nano Letters
2015 Nature Communications
2014 Nano Letters
2014 Nature Nanotechnology
2014 Nano Letters
2013 Nano Letters
2013 ACS Nano
2012 Nano Letters
2011 Nano Letters

Peers

Countries citing papers authored by Tomás Palacios

Since Specialization

Citations

This map shows the geographic impact of Tomás Palacios's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomás Palacios with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomás Palacios more than expected).

Fields of papers citing papers by Tomás Palacios

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomás Palacios. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomás Palacios. The network helps show where Tomás Palacios may publish in the future.

Co-authors

The 25 scholars most cited alongside Tomás Palacios, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Tomás Palacios Line = papers co-authored together Tomás Palacios links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors ArXiv.org ·Alick West, 美帆老木, Jerry W. Pratt, John Niroula, Pedro Rosado, Chandan Joishi, Brianna Klein, Andrew Armstrong, Andrew A. Allerman, Tomás Palacios, Siddharth Rajan	2025	0
2	System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity IEEE Journal of the Electron Devices Society ·Gr. Prinz Ypsilanti, A. M. Neogy, C Y Lee, Teresa Munby, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomás Palacios, Nadim Chowdhury	2024	0
3	High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C Applied Physics Letters ·John Niroula, Qingyun Xie, Nitul S. Rajput, Kyung-Seok Park, Sheikh Ifatur Rahman, Muhammad Marwan Mohd Tanos, A.S. Warthin, Teresa Munby, Mengyang Yuan, 峯章山本, M. van Stenis, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios	2024	12
4	GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C Muhammad Marwan Mohd Tanos, Cheng Chang, Qingyun Xie, لیلی علیزاده, 杨佳琦, TsengShian-Shyong, Tomás Palacios, Yuji Zhao	2024	0
5	Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices Applied Physics Letters ·Joachim Würfl, Tomás Palacios, Huili Grace Xing, Yue Hao, M. Schubert	2024	8
6	Remote-Contact Catalysis for Target-Diameter Semiconducting Carbon Nanotube Arrays Journal of the American Chemical Society ·Jiangtao Wang, Xudong Zheng, Gregory Pitner, Xiang Ji, Tianyi Zhang, Rita N. Jyai, Jiadi Zhu, Tomás Palacios, Lain‐Jong Li, Han Wang, Jing Kong	2024	2
7	AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity IEEE Transactions on Electron Devices ·K SUTHERLAND, Gr. Prinz Ypsilanti, Teresa Munby, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomás Palacios, Nadim Chowdhury	2023	12
8	Highly Scaled GaN Complementary Technology on a Silicon Substrate IEEE Transactions on Electron Devices ·Qingyun Xie, Mengyang Yuan, John Niroula, Teresa Munby, M Alzahaby, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios	2023	19
9	GaN Memory Operational at 300 °C IEEE Electron Device Letters ·Mengyang Yuan, Qingyun Xie, John Niroula, Nadim Chowdhury, Tomás Palacios	2022	13
10	The impact of semiconductor surface states on vacuum field emission Journal of Applied Physics ·Lin Myint Nyan, Chandan Joishi, Nurhasnah Nurhasnah, Tomás Palacios, Siddharth Rajan	2022	1
11	Resonance-Enhanced Excitation of Interlayer Vibrations in Atomically Thin Black Phosphorus Nano Letters ·Nannan Mao, Yuxuan Lin, Ya‐Qing Bie, Tomás Palacios, Liangbo Liang, Riichiro Saito, Xi Ling, Jing Kong, William A. Tisdale	2021	13
12	Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects Journal of Applied Physics ·Koon Hoo Teo, Yuhao Zhang, Nadim Chowdhury, Shaloo Rakheja, Rui Ma, Qingyun Xie, Eiji Yagyu, Koji Yamanaka, Janner Villalba Cano, Tomás Palacios Hit paper breakdown →	2021	207
13	On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Científicas) ·Laura Barrutia, 穆豊島, Mario Ochoa, M. Gabás, Iván García, Tomás Palacios, Andrew Johnson, Ignacio Rey‐Stolle, Carlos Algora	2019	8
14	Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al_0.8Ga_0.2N/AlN on SiC With Drain Current Over 100 mA/mm IEEE Electron Device Letters ·Jori Lemettinen, Nadim Chowdhury, Hironori Okumura, Jasmine Pomaika'ikaikamahine Merseberg, Sami Suihkonen, Tomás Palacios	2019	37
15	p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si IEEE Electron Device Letters ·Nadim Chowdhury, Jori Lemettinen, Qingyun Xie, Yuhao Zhang, Nitul S. Rajput, Xiang Peng, Kai Cheng, Sami Suihkonen, Han Wui Then, Tomás Palacios	2019	114
16	CVD Technology for 2-D Materials IEEE Transactions on Electron Devices ·Pin‐Chun Shen, Yuxuan Lin, Haozhe Wang, Ji Hoon Park, Wei Sun Leong, Ang‐Yu Lu, Tomás Palacios, Jing Kong	2018	63
17	Planar Nanostrip-Channel Al₂O₃/InAlN/GaN MISHEMTs on Si With Improved Linearity IEEE Electron Device Letters ·Bao-Tran Ngoc Dang, Zhihong Liu, Kumud Ranjan, Geok Ing Ng, Tomás Palacios	2018	24
18	Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation IEEE Electron Device Letters ·Yuhao Zhang, Zhihong Liu, Marko J. Tadjer, Min Sun, Daniel Piedra, Christopher Hatem, Travis J. Anderson, Lunet E. Luna, Anindya Nath, Andrew D. Koehler, Hironori Okumura, Jie Hu, Xu Zhang, Xiang Gao, Boris N. Feigelson, Karl D. Hobart, Tomás Palacios	2017	148
19	High Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications Japanese Journal of Applied Physics ·Allen Hsu, Han Wang, Ki Kang Kim, Jing Kong, Tomás Palacios	2011	10
20	High Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications Japanese Journal of Applied Physics ·Allen Hsu, Han Wang, Ki Kang Kim, Jing Kong, Tomás Palacios	2011	6

About Tomás Palacios

Tomás Palacios is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 377 papers that have together received 26.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (240 papers), Semiconductor materials and devices (124 papers), Silicon Carbide Semiconductor Technologies (92 papers), Ga2O3 and related materials (88 papers), Graphene research and applications (65 papers), 2D Materials and Applications (57 papers), Radio Frequency Integrated Circuit Design (34 papers) and Advancements in Semiconductor Devices and Circuit Design (33 papers). The work is most often cited by research in Condensed Matter Physics (8.5k citations), Materials Chemistry (15.2k citations), Electronic, Optical and Magnetic Materials (5.3k citations), Electrical and Electronic Engineering (14.6k citations) and Biomedical Engineering (5.3k citations). Tomás Palacios has collaborated with scholars based in United States, Japan and Spain. Frequent co-authors include Jing Kong, Allen Hsu, M. S. Dresselhaus, Lili Yu, Yi‐Hsien Lee, Yuhao Zhang, Ahmad Zubair, Yumeng Shi, Han Wang and Gianluca Fiori. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Nano Letters and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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