A. Nanni
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 30
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- Radio Frequency Integrated Circuit Design 33
- Silicon Carbide Semiconductor Technologies 12
- Advanced Power Amplifier Design 9
- Microwave Engineering and Waveguides 6
- Semiconductor materials and devices 5
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- Semiconductor Quantum Structures and Devices 7
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- Acoustic Wave Resonator Technologies 6
- Co-authors
- Ernesto LimitiWalter CiccognaniC. LanzieriA. PantelliniSergio ColangeliAlessandro ChiniGaudenzio MeneghessoEnrico Zanoni
- Cited by
- Condensed Matter PhysicsElectrical and Electronic EngineeringAtomic and Molecular Physics, and Optics
In The Last Decade
A. Nanni
40 papers receiving 562 citations
Peers
Comparison fields: 5 of 20
- Condensed Matter Physics 453
- Electrical and Electronic Engineering 552
- Atomic and Molecular Physics, and Optics 165
- Electronic, Optical and Magnetic Materials 76
- Biomedical Engineering 48
Countries citing papers authored by A. Nanni
This map shows the geographic impact of A. Nanni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Nanni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Nanni more than expected).
Fields of papers citing papers by A. Nanni
This network shows the impact of papers produced by A. Nanni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Nanni. The network helps show where A. Nanni may publish in the future.
Co-authorship network
The 25 scholars most cited alongside A. Nanni, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2015 | 43 | |
| 2 | 2014 | 1 | |
| 3 | A GaN on SiC process with high power density and efficiency | 2013 | 2 |
| 4 | 2013 | 109 | |
| 5 | 1–7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate | 2012 | 6 |
| 6 | 2012 | 2 | |
| 7 | 2012 | 7 | |
| 8 | Thermal behavior of AlGaN/GaN HEMT on silicon Microstrip technology | 2011 | 4 |
| 9 | 2011 | 21 | |
| 10 | 2011 | 4 | |
| 11 | High Voltage Breakdown pHEMTs for C-band HPA | 2010 | 5 |
| 12 | Performance assessment of GaN HEMT technologies for power limiter and switching applications | 2010 | 2 |
| 13 | 2010 | 23 | |
| 14 | Gate technology and substrate property influence on GaN HEMT switch device performance | 2009 | 2 |
| 15 | 2009 | 5 | |
| 16 | 2008 | 0 | |
| 17 | 2007 | 3 | |
| 18 | 2007 | 2 | |
| 19 | Design strategies for efficient and linear RF power amplifiers | 2006 | 3 |
| 20 | 2006 | 10 |
About A. Nanni
A. Nanni is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 41 papers that have together received 600 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (33 papers), GaN-based semiconductor devices and materials (30 papers), Silicon Carbide Semiconductor Technologies (12 papers), Advanced Power Amplifier Design (9 papers), Semiconductor Quantum Structures and Devices (7 papers), Microwave Engineering and Waveguides (6 papers), Acoustic Wave Resonator Technologies (6 papers) and Semiconductor materials and devices (5 papers). The work is most often cited by research in Condensed Matter Physics (453 citations), Electrical and Electronic Engineering (552 citations) and Atomic and Molecular Physics, and Optics (165 citations). A. Nanni has collaborated with scholars based in Italy, France and Mexico. Frequent co-authors include Ernesto Limiti, Walter Ciccognani, C. Lanzieri, A. Pantellini, Sergio Colangeli, Alessandro Chini, Gaudenzio Meneghesso, Enrico Zanoni, Davide Bisi and M. Peroni. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, International Journal of RF and Microwave Computer-Aided Engineering and Microelectronic Engineering.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.