A. Nanni

747 total citations
41 papers, 600 citations indexed

About

A. Nanni is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Nanni has authored 41 papers receiving a total of 600 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 30 papers in Condensed Matter Physics and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Nanni's work include Radio Frequency Integrated Circuit Design (33 papers), GaN-based semiconductor devices and materials (30 papers) and Silicon Carbide Semiconductor Technologies (12 papers). A. Nanni is often cited by papers focused on Radio Frequency Integrated Circuit Design (33 papers), GaN-based semiconductor devices and materials (30 papers) and Silicon Carbide Semiconductor Technologies (12 papers). A. Nanni collaborates with scholars based in Italy, France and Mexico. A. Nanni's co-authors include Ernesto Limiti, Walter Ciccognani, A. Pantellini, C. Lanzieri, Sergio Colangeli, Alessandro Chini, Gaudenzio Meneghesso, Enrico Zanoni, M. Peroni and Matteo Meneghini and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

A. Nanni

40 papers receiving 562 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Nanni Italy	11	552	453	165	76	48	41	600
Hua-Quen Tserng United States	8	448 0.8×	396 0.9×	119 0.7×	93 1.2×	27 0.6×	16	501
Robert Grabar United States	14	523 0.9×	426 0.9×	152 0.9×	100 1.3×	46 1.0×	20	567
D. Floriot France	14	740 1.3×	539 1.2×	168 1.0×	41 0.5×	24 0.5×	60	767
F. van Raay Germany	16	742 1.3×	488 1.1×	136 0.8×	75 1.0×	48 1.0×	88	792
R. Behtash Germany	12	378 0.7×	364 0.8×	89 0.5×	62 0.8×	31 0.6×	21	412
Zhaoke Bian China	11	321 0.6×	319 0.7×	96 0.6×	182 2.4×	18 0.4×	16	400
Ioulia Smorchkova United States	16	610 1.1×	586 1.3×	206 1.2×	117 1.5×	96 2.0×	31	724
Junjie Yang China	13	271 0.5×	275 0.6×	98 0.6×	135 1.8×	26 0.5×	55	423
F. Lecourt France	9	269 0.5×	289 0.6×	62 0.4×	101 1.3×	44 0.9×	21	345
Martin Fagerlind Sweden	10	339 0.6×	317 0.7×	85 0.5×	93 1.2×	32 0.7×	20	377

Countries citing papers authored by A. Nanni

Since Specialization

Citations

This map shows the geographic impact of A. Nanni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Nanni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Nanni more than expected).

Fields of papers citing papers by A. Nanni

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Nanni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Nanni. The network helps show where A. Nanni may publish in the future.

Co-authorship network of co-authors of A. Nanni

This figure shows the co-authorship network connecting the top 25 collaborators of A. Nanni. A scholar is included among the top collaborators of A. Nanni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Nanni. A. Nanni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bisi, Davide, Alessandro Chini, Antonio Stocco, et al.. (2015). Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design. IEEE Electron Device Letters. 36(10). 1011–1014. 43 indexed citations

Lanzieri, C., et al.. (2014). Selex ES GaN technology: Improvements, results and R&D approach for 0.5μm and 0.25μm process. 229–232. 1 indexed citations

Giofrè, Rocco, Paolo Colantonio, F. Giannini, et al.. (2013). A GaN on SiC process with high power density and efficiency. Cineca Institutional Research Information System (Tor Vergata University). 180–183. 2 indexed citations

Colangeli, Sergio, et al.. (2013). GaN-Based Robust Low-Noise Amplifiers. IEEE Transactions on Electron Devices. 60(10). 3238–3248. 109 indexed citations

Giofrè, Rocco, Paolo Colantonio, F. Giannini, et al.. (2012). 1–7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate. Cineca Institutional Research Information System (Tor Vergata University). 425–428. 6 indexed citations

Giofrè, Rocco, Paolo Colantonio, F. Giannini, et al.. (2012). Ultra wide band power amplifier using GaN on Si HEMT device. Cineca Institutional Research Information System (Tor Vergata University). 722–725. 2 indexed citations

Pantellini, A., C. Lanzieri, A. Nanni, et al.. (2012). GaN-on-Silicon Evaluation for High-Power MMIC Applications. Materials science forum. 711. 223–227. 7 indexed citations

Pantellini, A., A. Nanni, & C. Lanzieri. (2011). Thermal behavior of AlGaN/GaN HEMT on silicon Microstrip technology. European Microwave Integrated Circuit Conference. 132–135. 4 indexed citations

Riccio, Michele, A. Pantellini, Andrea Irace, et al.. (2011). Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology. Microelectronics Reliability. 51(9-11). 1725–1729. 21 indexed citations

10.

Giovine, E., A. Notargiacomo, A. Pantellini, et al.. (2011). Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications. Microelectronic Engineering. 88(8). 1927–1930. 4 indexed citations

11.

Pantellini, A., et al.. (2010). Performance assessment of GaN HEMT technologies for power limiter and switching applications. 45–48. 2 indexed citations

12.

Lavanga, S., Alessandro Chini, A. Nanni, et al.. (2010). High Voltage Breakdown pHEMTs for C-band HPA. IRIS UNIMORE (University of Modena and Reggio Emilia). 5 indexed citations

13.

Limiti, Ernesto, et al.. (2010). An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology. 2010 IEEE MTT-S International Microwave Symposium. 1–1. 23 indexed citations

14.

Pantellini, A., et al.. (2009). Gate technology and substrate property influence on GaN HEMT switch device performance. 140–143. 2 indexed citations

15.

Pantellini, A., S. Lavanga, A. Nanni, et al.. (2009). New fabrication process to manufacture RF-MEMS and HEMT on GaN/Si substrate. 1740–1743. 5 indexed citations

16.

Ciccognani, Walter, F. Giannini, Ernesto Limiti, et al.. (2008). GaN Device Technology: Manufacturing, Characterization, Modelling and Verification. Cineca Institutional Research Information System (Tor Vergata University). 45. 1–6. 8 indexed citations

17.

Colantonio, Paolo, F. Giannini, Ernesto Limiti, et al.. (2007). Linearity and efficiency optimisation in microwave power amplifier design. 283–286. 2 indexed citations

18.

Ciccognani, Walter, F. Giannini, Ernesto Limiti, et al.. (2007). Extraction of Microwave FET Noise Parameters Using Frequency- Dependent Equivalent Noise Temperatures. Cineca Institutional Research Information System (Tor Vergata University). 856–860. 3 indexed citations

19.

Colantonio, Paolo, F. Giannini, Rocco Giofrè, Ernesto Limiti, & A. Nanni. (2006). Design strategies for efficient and linear RF power amplifiers. Cineca Institutional Research Information System (Tor Vergata University). 3 indexed citations

20.

Colantonio, Paolo, F. Giannini, Rocco Giofrè, Ernesto Limiti, & A. Nanni. (2006). Power Amplifier Design Strategy to null IMD asymmetry. Cineca Institutional Research Information System (Tor Vergata University). 1. 1304–1307. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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