Benoît Lambert
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 34
-
- Semiconductor materials and devices 24
- Silicon Carbide Semiconductor Technologies 14
- Radio Frequency Integrated Circuit Design 12
- Advancements in Semiconductor Devices and Circuit Design 10
- Integrated Circuits and Semiconductor Failure Analysis 9
-
- Semiconductor Quantum Structures and Devices 9
- Semiconductor materials and interfaces 6
- Co-authors
- James W. PomeroyH. BlanckMichael J. UrenNathalie LabatD. FloriotMartin KuballH. JungM. Camiade
- Cited by
- Condensed Matter PhysicsElectrical and Electronic EngineeringElectronic, Optical and Magnetic Materials
- Journals
- Microelectronics Reliability (22 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Electron Device Letters (2 papers)
- Partner nations
- FranceItalyNetherlands
In The Last Decade
Benoît Lambert
46 papers receiving 406 citations
Peers
Comparison fields: 5 of 41
- Condensed Matter Physics 336
- Electrical and Electronic Engineering 336
- Electronic, Optical and Magnetic Materials 78
- Atomic and Molecular Physics, and Optics 92
- Materials Chemistry 79
Countries citing papers authored by Benoît Lambert
This map shows the geographic impact of Benoît Lambert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benoît Lambert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benoît Lambert more than expected).
Fields of papers citing papers by Benoît Lambert
This network shows the impact of papers produced by Benoît Lambert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benoît Lambert. The network helps show where Benoît Lambert may publish in the future.
Co-authorship network
The 25 scholars most cited alongside Benoît Lambert, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2025 | 0 | |
| 2 | 2024 | 0 | |
| 3 | 2023 | 0 | |
| 4 | 2023 | 2 | |
| 5 | 2023 | 2 | |
| 6 | 2022 | 2 | |
| 7 | 2022 | 2 | |
| 8 | 2020 | 2 | |
| 9 | 2019 | 3 | |
| 10 | 2018 | 0 | |
| 11 | 2016 | 33 | |
| 12 | 2015 | 4 | |
| 13 | 2015 | 3 | |
| 14 | 2014 | 26 | |
| 15 | 2014 | 18 | |
| 16 | 2013 | 7 | |
| 17 | 2013 | 22 | |
| 18 | New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit | 2012 | 17 |
| 19 | 2002 | 2 | |
| 20 | 1987 | 5 |
About Benoît Lambert
Benoît Lambert is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 51 papers that have together received 423 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (24 papers), Silicon Carbide Semiconductor Technologies (14 papers), Radio Frequency Integrated Circuit Design (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor Quantum Structures and Devices (9 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Semiconductor materials and interfaces (6 papers). The work is most often cited by research in Condensed Matter Physics (336 citations), Electrical and Electronic Engineering (336 citations) and Electronic, Optical and Magnetic Materials (78 citations). Benoît Lambert has collaborated with scholars based in France, Italy and Netherlands. Frequent co-authors include James W. Pomeroy, H. Blanck, Michael J. Uren, Nathalie Labat, D. Floriot, Martin Kuball, H. Jung, M. Camiade, Mohsine Bouya and Frédérique Matonti. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Nuclear Science.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.