Benoît Lambert

621 total citations
51 papers, 423 citations indexed

About

Benoît Lambert is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Benoît Lambert has authored 51 papers receiving a total of 423 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 34 papers in Condensed Matter Physics and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Benoît Lambert's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (24 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Benoît Lambert is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (24 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Benoît Lambert collaborates with scholars based in France, Italy and Netherlands. Benoît Lambert's co-authors include James W. Pomeroy, Michael J. Uren, H. Blanck, Nathalie Labat, Martin Kuball, D. Floriot, Mohsine Bouya, M. Camiade, H. Jung and Frédérique Matonti and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Benoît Lambert

46 papers receiving 406 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Benoît Lambert France 13 336 336 92 79 78 51 423
Yuichi Minoura Japan 8 281 0.8× 262 0.8× 68 0.7× 84 1.1× 108 1.4× 19 347
R. Kruszka Poland 10 127 0.4× 223 0.7× 99 1.1× 134 1.7× 70 0.9× 47 333
Hyungkun Kim South Korea 8 311 0.9× 176 0.5× 128 1.4× 173 2.2× 92 1.2× 14 364
Kamal Hussain United States 12 307 0.9× 279 0.8× 99 1.1× 137 1.7× 208 2.7× 48 463
Ivor Guiney United Kingdom 12 252 0.8× 269 0.8× 65 0.7× 63 0.8× 121 1.6× 41 349
Xiujian Sun China 12 320 1.0× 273 0.8× 144 1.6× 86 1.1× 162 2.1× 38 408
Yuuki Enatsu Japan 10 436 1.3× 307 0.9× 59 0.6× 108 1.4× 209 2.7× 14 461
X. Li United States 12 315 0.9× 172 0.5× 122 1.3× 127 1.6× 116 1.5× 34 347
P. Vanmeerbeek Belgium 13 474 1.4× 611 1.8× 109 1.2× 105 1.3× 177 2.3× 39 682
Erdem Arkun United States 11 279 0.8× 284 0.8× 101 1.1× 77 1.0× 114 1.5× 27 370

Countries citing papers authored by Benoît Lambert

Since Specialization
Citations

This map shows the geographic impact of Benoît Lambert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benoît Lambert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benoît Lambert more than expected).

Fields of papers citing papers by Benoît Lambert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benoît Lambert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benoît Lambert. The network helps show where Benoît Lambert may publish in the future.

Co-authorship network of co-authors of Benoît Lambert

This figure shows the co-authorship network connecting the top 25 collaborators of Benoît Lambert. A scholar is included among the top collaborators of Benoît Lambert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benoît Lambert. Benoît Lambert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Matos, Magali De, et al.. (2025). DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate. Microelectronics Reliability. 170. 115772–115772.
2.
Graff, Andreas, Frank Altmann, Fabiana Rampazzo, et al.. (2023). Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates. Microelectronics Reliability. 150. 115096–115096.
3.
Frémont, H., et al.. (2023). Moisture absorption and desorption in epoxy mould compounds: Characterization of Fickian and non-Fickian behaviours in complex packages. Microelectronics Reliability. 150. 115088–115088. 2 indexed citations
4.
Buffolo, Matteo, Fabiana Rampazzo, Benoît Lambert, et al.. (2023). Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis. Microelectronics Reliability. 150. 115131–115131. 2 indexed citations
5.
Santi, Carlo De, Fabiana Rampazzo, H. Blanck, et al.. (2022). Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs. Microelectronics Reliability. 138. 114735–114735. 2 indexed citations
6.
Raja, P. Vigneshwara, et al.. (2022). HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μm AlGaN/GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques. 71(5). 1957–1966. 2 indexed citations
7.
Meneghini, Matteo, Fabiana Rampazzo, Benoît Lambert, et al.. (2020). On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion. IEEE Transactions on Electron Devices. 67(7). 2765–2770. 2 indexed citations
8.
Lambert, Benoît, et al.. (2019). Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests. Microelectronics Reliability. 100-101. 113358–113358. 3 indexed citations
9.
10.
Pomeroy, James W., et al.. (2016). Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs. IEEE Electron Device Letters. 37(9). 1197–1200. 33 indexed citations
11.
Lambert, Benoît, et al.. (2015). New approach for an accurate Schottky Barrier Height's extraction by I-V-T measurements. HAL (Le Centre pour la Communication Scientifique Directe). 1–4. 4 indexed citations
12.
Lambert, Benoît, et al.. (2015). Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectronics Reliability. 55(9-10). 1714–1718. 3 indexed citations
13.
Stocco, Antonio, Simone Gerardin, Davide Bisi, et al.. (2014). Proton induced trapping effect on space compatible GaN HEMTs. Microelectronics Reliability. 54(9-10). 2213–2216. 18 indexed citations
14.
Floriot, D., et al.. (2014). GH25-10: New qualified power GaN HEMT process from technology to product overview. 225–228. 26 indexed citations
15.
Lambert, Benoît, et al.. (2013). Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectronics Reliability. 53(9-11). 1450–1455. 22 indexed citations
16.
17.
Floriot, D., et al.. (2012). New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit. European Microwave Integrated Circuit Conference. 317–320. 17 indexed citations
18.
Lambert, Benoît & Frédérique Matonti. (2001). Un théâtre de contrebande. Quelques hypothèses sur Vitez et le communisme. Sociétés & Représentations. n° 11(1). 379–406. 8 indexed citations
19.
Lambert, Benoît, et al.. (2001). Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectronics Reliability. 41(9-10). 1573–1578. 1 indexed citations
20.
Lippens, D., O. Vanbésien, & Benoît Lambert. (1987). MULTIQUANTUM WELL GaAs/AlGaAs STRUCTURES APPLIED TO AVALANCHE TRANSIT TIME DEVICES. Le Journal de Physique Colloques. 48(C5). C5–487. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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