Michael Dammann

744 total citations · 1 hit paper
23 papers, 596 citations indexed

About

Michael Dammann is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Michael Dammann has authored 23 papers receiving a total of 596 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Michael Dammann's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (8 papers). Michael Dammann is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (8 papers). Michael Dammann collaborates with scholars based in Germany, Italy and Netherlands. Michael Dammann's co-authors include M. Mikulla, Peter Brückner, Alessandro Chini, Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Enrico Zanoni, Davide Bisi, A. Tessmann and M. Schlechtweg and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Journal of Electronic Materials.

In The Last Decade

Michael Dammann

17 papers receiving 581 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

2013 343 citations Davide Bisi, Matteo Meneghini et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Michael Dammann Germany	8	524	451	204	118	53	23	596
P. Janke United States	12	434 0.8×	373 0.8×	162 0.8×	121 1.0×	53 1.0×	23	505
Robert Grabar United States	14	523 1.0×	426 0.9×	152 0.7×	100 0.8×	19 0.4×	20	567
F. van Raay Germany	16	742 1.4×	488 1.1×	136 0.7×	75 0.6×	35 0.7×	88	792
H. Shigematsu Japan	16	566 1.1×	243 0.5×	136 0.7×	60 0.5×	36 0.7×	30	606
Stephan Maroldt Germany	9	304 0.6×	219 0.5×	71 0.3×	69 0.6×	26 0.5×	28	348
H.Q. Tserng United States	15	701 1.3×	340 0.8×	320 1.6×	79 0.7×	40 0.8×	89	760
Martin Fagerlind Sweden	10	339 0.6×	317 0.7×	85 0.4×	93 0.8×	39 0.7×	20	377
H. Blanck France	17	693 1.3×	503 1.1×	271 1.3×	120 1.0×	96 1.8×	78	788
P. J. Willadsen United States	18	899 1.7×	870 1.9×	240 1.2×	315 2.7×	83 1.6×	30	1.0k

Countries citing papers authored by Michael Dammann

Since Specialization

Citations

This map shows the geographic impact of Michael Dammann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael Dammann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael Dammann more than expected).

Fields of papers citing papers by Michael Dammann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael Dammann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael Dammann. The network helps show where Michael Dammann may publish in the future.

Co-authorship network of co-authors of Michael Dammann

This figure shows the co-authorship network connecting the top 25 collaborators of Michael Dammann. A scholar is included among the top collaborators of Michael Dammann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael Dammann. Michael Dammann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Reiner, Richard, et al.. (2025). Thermal Characterization of GaN Power HEMTs by Transient I – V Curves, Infrared Microscopy, and Thermal Simulation. IEEE Transactions on Electron Devices. 72(12). 6546–6553.

Leone, Stefano, et al.. (2025). TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 10. 100080–100080.

Salas, Sergio Marco, et al.. (2025). Exploration of RNA outside segmented cells in spatial transcriptomics reveals extrasomatic RNA organization. bioRxiv (Cold Spring Harbor Laboratory).

Dammann, Michael, et al.. (2024). Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation f_max = 20.4 GHz. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–2.

Dammann, Michael, et al.. (2023). Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–2.

Driad, R., et al.. (2021). Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 277–282. 6 indexed citations

Dammann, Michael, M. Baeumler, V. M. Polyakov, et al.. (2020). Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. FreiDok plus (Universitätsbibliothek Freiburg). 1–6. 1 indexed citations

Reiner, Richard, Patrick Waltereit, Stefan Moench, et al.. (2020). Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 286–289. 4 indexed citations

Dammann, Michael, et al.. (2018). Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 90. 1–6. 2 indexed citations

10.

Schwantuschke, Dirk, Peter Brückner, Sandrine Wagner, et al.. (2017). Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 395–398. 16 indexed citations

11.

Bisi, Davide, Matteo Meneghini, Carlo De Santi, et al.. (2013). Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements. IEEE Transactions on Electron Devices. 60(10). 3166–3175. 343 indexed citations breakdown →

12.

Maroldt, Stephan, R. Quay, Dirk Schwantuschke, et al.. (2013). (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies. Japanese Journal of Applied Physics. 52(8S). 08JN13–08JN13. 6 indexed citations

13.

Baeumler, M., Michael Dammann, Markus Cäsar, et al.. (2012). Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs. Materials science forum. 725. 79–82. 4 indexed citations

14.

Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2012). GaN‐based high‐frequency devices and circuits: A Fraunhofer perspective. physica status solidi (a). 209(3). 491–496. 8 indexed citations

15.

Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2010). AlGaN/GaN epitaxy and technology. International Journal of Microwave and Wireless Technologies. 2(1). 3–11. 31 indexed citations

16.

Baeumler, M., V. M. Polyakov, Markus Cäsar, et al.. (2010). Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy. Journal of Electronic Materials. 39(6). 756–760. 18 indexed citations

17.

Aidam, R., Patrick Waltereit, Lutz Kirste, Michael Dammann, & R. Quay. (2010). Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production. physica status solidi (a). 207(6). 1450–1454. 11 indexed citations

18.

Leuther, Arnulf, A. Tessmann, Michael Dammann, et al.. (2007). 50 nm MHEMT Technology for G- and H-Band MMICs. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 24–27. 71 indexed citations

19.

Dammann, Michael, et al.. (2002). <title>Carrier density dependence of the lifetime of InGaAs/AlGaAs high-power lasers</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4648. 1–8. 3 indexed citations

20.

Dammann, Michael, et al.. (1994). Defects in Silicon induced by high temperature treatment and their influence on MOS-devices. DORA Empa (Swiss Federal Laboratories for Materials Science and Technology (Empa)).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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