Geetak Gupta

403 total citations
25 papers, 290 citations indexed

About

Geetak Gupta is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Geetak Gupta has authored 25 papers receiving a total of 290 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 20 papers in Electrical and Electronic Engineering and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Geetak Gupta's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Geetak Gupta is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Geetak Gupta collaborates with scholars based in United States. Geetak Gupta's co-authors include Umesh K. Mishra, S. Keller, Steven P. DenBaars, Matthew A. Laurent, Chirag Gupta, Yuuki Enatsu, Jing Lu, Elaheh Ahmadi, Carl J. Neufeld and Davide Bisi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Geetak Gupta

24 papers receiving 272 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Geetak Gupta United States 11 231 216 100 91 67 25 290
Ming Tao China 10 258 1.1× 242 1.1× 141 1.4× 69 0.8× 80 1.2× 18 328
Yuichi Minoura Japan 8 281 1.2× 262 1.2× 108 1.1× 68 0.7× 84 1.3× 19 347
R. Li United States 7 307 1.3× 265 1.2× 114 1.1× 98 1.1× 68 1.0× 12 362
Erdem Arkun United States 11 279 1.2× 284 1.3× 114 1.1× 101 1.1× 77 1.1× 27 370
S.S. Park South Korea 10 236 1.0× 217 1.0× 101 1.0× 120 1.3× 63 0.9× 22 295
S. C. Foo Singapore 9 328 1.4× 301 1.4× 180 1.8× 62 0.7× 74 1.1× 11 369
Kazuhide Sumiyoshi Japan 5 322 1.4× 205 0.9× 167 1.7× 125 1.4× 72 1.1× 10 342
Sreenidhi Turuvekere India 7 384 1.7× 347 1.6× 165 1.6× 92 1.0× 79 1.2× 15 429
S. Vitanov Austria 8 298 1.3× 250 1.2× 92 0.9× 99 1.1× 36 0.5× 13 325
Yueh-Chin Lin Taiwan 12 231 1.0× 324 1.5× 118 1.2× 102 1.1× 90 1.3× 52 402

Countries citing papers authored by Geetak Gupta

Since Specialization
Citations

This map shows the geographic impact of Geetak Gupta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Geetak Gupta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Geetak Gupta more than expected).

Fields of papers citing papers by Geetak Gupta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Geetak Gupta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Geetak Gupta. The network helps show where Geetak Gupta may publish in the future.

Co-authorship network of co-authors of Geetak Gupta

This figure shows the co-authorship network connecting the top 25 collaborators of Geetak Gupta. A scholar is included among the top collaborators of Geetak Gupta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Geetak Gupta. Geetak Gupta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mishra, U. K., Davide Bisi, Geetak Gupta, Carl J. Neufeld, & P. Parikh. (2024). The Future of GaN is Also High Voltage, High Current, and Bidirectional: (Invited). 1–4. 1 indexed citations
2.
Gupta, Geetak & Elaheh Ahmadi. (2024). (Ultra)wide-bandgap semiconductors for electric vehicles. MRS Bulletin. 49(7). 730–737. 4 indexed citations
3.
Gupta, Geetak, Masahito Kanamura, Brian L. Swenson, et al.. (2022). 1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications. 2022 International Electron Devices Meeting (IEDM). 35.2.1–35.2.4. 11 indexed citations
4.
Bisi, Davide, Brian Romanczyk, Geetak Gupta, et al.. (2021). Commercially Available N-polar GaN HEMT Epitaxy for RF Applications. 250–254. 13 indexed citations
5.
Bisi, Davide, Geetak Gupta, Rakesh Lal, et al.. (2021). Short-Circuit Capability Demonstrated for GaN Power Switches. 370–375. 19 indexed citations
6.
Gupta, Geetak, et al.. (2017). Establishment of design space for high current gain in III-N hot electron transistors. Semiconductor Science and Technology. 33(1). 15018–15018. 6 indexed citations
7.
Laurent, Matthew A., et al.. (2016). Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes. Journal of Applied Physics. 119(6). 32 indexed citations
8.
Chan, Silvia H., Cory Lund, Haoran Li, et al.. (2016). Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(3). 18 indexed citations
9.
Gupta, Geetak, et al.. (2015). Measurement of the hot electron mean free path in GaN. Bulletin of the American Physical Society. 1 indexed citations
10.
Gupta, Geetak, et al.. (2015). Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base. IEEE Electron Device Letters. 36(5). 439–441. 10 indexed citations
11.
Gupta, Geetak, et al.. (2015). Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor. Semiconductor Science and Technology. 30(10). 105003–105003. 2 indexed citations
12.
Gupta, Geetak, et al.. (2015). Barrier height fluctuations in InGaN polarization dipole diodes. Applied Physics Letters. 107(17). 5 indexed citations
13.
Chowdhury, Srabanti, et al.. (2015). The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor. IEEE Electron Device Letters. 36(7). 669–671. 2 indexed citations
14.
Laurent, Matthew A., Geetak Gupta, Steven Wienecke, et al.. (2014). Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 116(18). 4 indexed citations
15.
16.
Dasgupta, Sansaptak, et al.. (2013). Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors. Applied Physics Express. 6(3). 34002–34002. 6 indexed citations
17.
Gupta, Geetak, Matthew A. Laurent, Jing Lu, S. Keller, & Umesh K. Mishra. (2013). Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors. Applied Physics Express. 7(1). 14102–14102. 11 indexed citations
18.
19.
Lal, Shalini, Jing Lu, Geetak Gupta, et al.. (2013). Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor. IEEE Electron Device Letters. 34(12). 1500–1502. 4 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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