Alessandro Chini
- Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 125
-
- Ga2O3 and related materials 29
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- Semiconductor materials and devices 67
- Silicon Carbide Semiconductor Technologies 56
- Radio Frequency Integrated Circuit Design 30
- Advancements in Semiconductor Devices and Circuit Design 20
-
- Semiconductor Quantum Structures and Devices 45
- Materials Chemistry top 10%
- ZnO doping and properties 13
- Co-authors
- Gaudenzio MeneghessoEnrico ZanoniUmesh K. MishraMatteo MeneghiniS. KellerG. VerzellesiS. HeikmanD. Buttari
- Cited by
- Condensed Matter PhysicsElectronic, Optical and Magnetic MaterialsElectrical and Electronic Engineering
- Journals
- IEEE Transactions on Electron Devices (17 papers)IEEE Electron Device Letters (14 papers)Microelectronics Reliability (11 papers)
- Partner nations
- ItalyUnited StatesFrance
In The Last Decade
Alessandro Chini
136 papers receiving 4.0k citations
Hit Papers
Peers
Comparison fields: 5 of 40
- Condensed Matter Physics 3.8k
- Electronic, Optical and Magnetic Materials 1.3k
- Electrical and Electronic Engineering 3.2k
- Atomic and Molecular Physics, and Optics 1.1k
- Materials Chemistry 686
Countries citing papers authored by Alessandro Chini
This map shows the geographic impact of Alessandro Chini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alessandro Chini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alessandro Chini more than expected).
Fields of papers citing papers by Alessandro Chini
This network shows the impact of papers produced by Alessandro Chini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alessandro Chini. The network helps show where Alessandro Chini may publish in the future.
Co-authorship network
The 25 scholars most cited alongside Alessandro Chini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2025 | 0 | |
| 2 | 2024 | 1 | |
| 3 | 2024 | 1 | |
| 4 | 2024 | 1 | |
| 5 | 2023 | 3 | |
| 6 | 2023 | 2 | |
| 7 | 2023 | 7 | |
| 8 | 2023 | 21 | |
| 9 | 2023 | 11 | |
| 10 | 2022 | 6 | |
| 11 | 2021 | 53 | |
| 12 | GaN-based power devices: Physics, reliability, and perspectivesbreakdown → | 2021 | 398 |
| 13 | 2021 | 13 | |
| 14 | 2021 | 10 | |
| 15 | 2021 | 26 | |
| 16 | 2020 | 16 | |
| 17 | 2017 | 5 | |
| 18 | 2016 | 90 | |
| 19 | Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs | 2011 | 1 |
| 20 | High Voltage Breakdown pHEMTs for C-band HPA | 2010 | 5 |
About Alessandro Chini
Alessandro Chini is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 142 papers that have together received 4.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (125 papers), Semiconductor materials and devices (67 papers), Silicon Carbide Semiconductor Technologies (56 papers), Semiconductor Quantum Structures and Devices (45 papers), Radio Frequency Integrated Circuit Design (30 papers), Ga2O3 and related materials (29 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and ZnO doping and properties (13 papers). The work is most often cited by research in Condensed Matter Physics (3.8k citations), Electronic, Optical and Magnetic Materials (1.3k citations), Electrical and Electronic Engineering (3.2k citations), Atomic and Molecular Physics, and Optics (1.1k citations) and Materials Chemistry (686 citations). Alessandro Chini has collaborated with scholars based in Italy, United States and France. Frequent co-authors include Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, Matteo Meneghini, S. Keller, G. Verzellesi, S. Heikman, D. Buttari, Nicolò Zagni and Carlo De Santi. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronics Reliability, Electronics Letters and Applied Physics Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.