Alessandro Chini

5.3k total citations · 2 hit papers
142 papers, 4.1k citations indexed

About

Alessandro Chini is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Alessandro Chini has authored 142 papers receiving a total of 4.1k indexed citations (citations by other indexed papers that have themselves been cited), including 127 papers in Electrical and Electronic Engineering, 125 papers in Condensed Matter Physics and 48 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Alessandro Chini's work include GaN-based semiconductor devices and materials (125 papers), Semiconductor materials and devices (67 papers) and Silicon Carbide Semiconductor Technologies (56 papers). Alessandro Chini is often cited by papers focused on GaN-based semiconductor devices and materials (125 papers), Semiconductor materials and devices (67 papers) and Silicon Carbide Semiconductor Technologies (56 papers). Alessandro Chini collaborates with scholars based in Italy, United States and France. Alessandro Chini's co-authors include Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, Matteo Meneghini, S. Keller, G. Verzellesi, S. Heikman, D. Buttari, Nicolò Zagni and Carlo De Santi and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Alessandro Chini

136 papers receiving 4.0k citations

Hit Papers

GaN-based power devices: Physics... 2013 2026 2017 2021 2021 2013 100 200 300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. GaN-based power devices: Physics, reliability, and perspectives
    2021 398 citations Matteo Meneghini, Carlo De Santi et al. Journal of Applied Physics profile →
  2. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
    2013 343 citations Matteo Meneghini, Carlo De Santi et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Alessandro Chini Italy 32 3.8k 3.2k 1.3k 1.1k 686 142 4.1k
J. Kuzmı́k Slovakia 29 2.7k 0.7× 2.2k 0.7× 1.3k 1.0× 703 0.6× 660 1.0× 135 3.1k
Joachim Würfl Germany 31 2.6k 0.7× 2.7k 0.8× 1.3k 1.0× 703 0.6× 734 1.1× 195 3.5k
S. Heikman United States 35 4.4k 1.2× 3.1k 0.9× 2.2k 1.6× 1.0k 0.9× 1.2k 1.8× 80 4.8k
S. Arulkumaran Singapore 33 3.0k 0.8× 2.4k 0.7× 1.5k 1.2× 735 0.7× 749 1.1× 137 3.3k
P. Parikh United States 19 3.6k 1.0× 2.9k 0.9× 1.4k 1.0× 1.0k 0.9× 876 1.3× 53 3.9k
Frank Brunner Germany 28 2.2k 0.6× 1.5k 0.5× 1.2k 0.9× 444 0.4× 704 1.0× 135 2.5k
Srabanti Chowdhury United States 34 2.2k 0.6× 2.1k 0.6× 1.2k 0.9× 408 0.4× 1.0k 1.5× 157 3.0k
Masaaki Kuzuhara Japan 27 2.0k 0.5× 2.3k 0.7× 913 0.7× 849 0.8× 466 0.7× 191 2.8k
Farid Medjdoub France 28 2.3k 0.6× 1.8k 0.5× 1.1k 0.8× 575 0.5× 492 0.7× 113 2.5k
Jin Wei China 36 3.1k 0.8× 3.5k 1.1× 1.4k 1.0× 693 0.6× 592 0.9× 201 4.2k

Countries citing papers authored by Alessandro Chini

Since Specialization
Citations

This map shows the geographic impact of Alessandro Chini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alessandro Chini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alessandro Chini more than expected).

Fields of papers citing papers by Alessandro Chini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alessandro Chini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alessandro Chini. The network helps show where Alessandro Chini may publish in the future.

Co-authorship network of co-authors of Alessandro Chini

This figure shows the co-authorship network connecting the top 25 collaborators of Alessandro Chini. A scholar is included among the top collaborators of Alessandro Chini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alessandro Chini. Alessandro Chini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cioni, Marcello, et al.. (2025). On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs. Micromachines. 16(8). 873–873.
2.
Zagni, Nicolò, et al.. (2025). Analysis of Dynamic- R on and V TH Shift in On-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits. IEEE Journal of Emerging and Selected Topics in Power Electronics. 13(6). 7679–7686.
3.
Bianchini, Claudio, et al.. (2025). Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. Sensors. 25(12). 3605–3605. 1 indexed citations
4.
Zagni, Nicolò, G. Verzellesi, Alessandro Bertacchini, et al.. (2024). Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs. IEEE Electron Device Letters. 45(5). 801–804. 1 indexed citations
5.
Cioni, Marcello, Alessandro Chini, Nicolò Zagni, et al.. (2024). On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers. IEEE Electron Device Letters. 45(8). 1437–1440. 1 indexed citations
6.
Cioni, Marcello, Maria Eloisa Castagna, Giacomo Cappellini, et al.. (2023). Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies. SHILAP Revista de lepidopterología. 6. 100338–100338. 3 indexed citations
7.
Zagni, Nicolò, G. Verzellesi, Alessandro Chini, et al.. (2023). Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications. IEEE Transactions on Device and Materials Reliability. 23(4). 453–460. 7 indexed citations
8.
Chini, Alessandro, Nicolò Zagni, G. Verzellesi, et al.. (2023). Gate-Bias Induced RON Instability in p-GaN Power HEMTs. IEEE Electron Device Letters. 44(6). 915–918. 11 indexed citations
9.
Zanoni, Enrico, Carlo De Santi, Matteo Buffolo, et al.. (2023). Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability. IEEE Transactions on Electron Devices. 71(3). 1396–1407. 21 indexed citations
10.
Zagni, Nicolò, G. Verzellesi, & Alessandro Chini. (2022). Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications. Micromachines. 13(12). 2244–2244. 6 indexed citations
11.
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, et al.. (2021). “Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs. IEEE Transactions on Electron Devices. 68(2). 697–703. 53 indexed citations
12.
Meneghini, Matteo, Carlo De Santi, Idriss Abid, et al.. (2021). GaN-based power devices: Physics, reliability, and perspectives. Journal of Applied Physics. 130(18). 398 indexed citations breakdown →
13.
Zagni, Nicolò, Marcello Cioni, Ferdinando Iucolano, et al.. (2021). Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs. Semiconductor Science and Technology. 37(2). 25006–25006. 10 indexed citations
14.
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, & G. Verzellesi. (2021). On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines. 12(6). 709–709. 13 indexed citations
15.
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, et al.. (2020). Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–5. 12 indexed citations
16.
Chini, Alessandro, Gaudenzio Meneghesso, Matteo Meneghini, et al.. (2016). Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers. IEEE Transactions on Electron Devices. 63(9). 3473–3478. 90 indexed citations
17.
Saguatti, Davide, et al.. (2011). Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–3. 1 indexed citations
18.
Zanoni, Enrico, Gaudenzio Meneghesso, Matteo Meneghini, et al.. (2009). Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach. IRIS UNIMORE (University of Modena and Reggio Emilia). 212–217. 5 indexed citations
19.
Chini, Alessandro, Valerio Di Lecce, Michele Esposto, Gaudenzio Meneghesso, & Enrico Zanoni. (2009). RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements. IRIS UNIMORE (University of Modena and Reggio Emilia). 132–135. 16 indexed citations
20.
Meneghesso, Gaudenzio, et al.. (2001). Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes. IRIS UNIMORE (University of Modena and Reggio Emilia). 247–252. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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