Gaofei Tang

2.1k citations

38 papers · 1.7k indexed · h-index 22

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 36
- GaN-based semiconductor devices and materials 36
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 14

Co-authors: Kevin J. Chen Jin Wei Ruiliang Xie Hanxing Wang Mengyuan Hua Zhaofu Zhang Jiabei He Jiacheng Lei
Journals: IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Transactions on Power Electronics (2 papers)Japanese Journal of Applied Physics (1 paper)physica status solidi (a) (1 paper)
Partner nations: Hong Kong China Taiwan

In The Last Decade

Gaofei Tang

37 papers receiving 1.7k citations

Peers

Countries citing papers authored by Gaofei Tang

Since Specialization

Citations

This map shows the geographic impact of Gaofei Tang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gaofei Tang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gaofei Tang more than expected).

Fields of papers citing papers by Gaofei Tang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gaofei Tang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gaofei Tang. The network helps show where Gaofei Tang may publish in the future.

Co-authors

The 25 scholars most cited alongside Gaofei Tang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Gaofei Tang Line = papers co-authored together Gaofei Tang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Split-p-GaN Gate HEMT With Suppressed Negative V_th Shift and Enhanced Robustness Against False Turn-On IEEE Electron Device Letters ·Xuan Zhang, Jin Wei, Maojun Wang, Maria Contel, María-Alejandra Andueza-Vergara, Junjie Yang, Jiawei Cui, E. Piwowarsky, Prahlad Vaidyanathan, Jennifer Cimons, Qimeng Jiang, Gaofei Tang, Bo Shen	2025	1
2	900V Normally-OFF GaN-on-Si Transistors Achieved by Substrate Potential Modulation (SPM) Michela Tonti, Amina Bouguetitiche, Bum Shig Jung, M. M., Gaofei Tang	2024	2
3	GaN Power Integration Technology and Its Future Prospects IEEE Transactions on Electron Devices ·Jin Wei, Zheyang Zheng, Gaofei Tang, Han Xu, Gang Lyu, Li Zhang, Junting Chen, Mengyuan Hua, Sirui Feng, Tao Chen, Kevin J. Chen	2023	51
4	Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs IEEE Transactions on Industrial Electronics ·Han Xu, Gaofei Tang, Jin Wei, Zheyang Zheng, Kevin J. Chen	2021	23
5	Planar GaN Power Integration – The World is Flat Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Kevin J. Chen, Jin Wei, Gaofei Tang, Han Xu, Zheyang Zheng, Li Zhang, Wenjie Song	2020	54
6	Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode IEEE Transactions on Electron Devices ·Jiacheng Lei, Jin Wei, Gaofei Tang, Qingkai Qian, Zhaofu Zhang, Mengyuan Hua, Zheyang Zheng, Kevin J. Chen	2019	14
7	Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs IEEE Electron Device Letters ·Jin Wei, Ruiliang Xie, Han Xu, Hanxing Wang, Yuru Wang, Mengyuan Hua, Kailun Zhong, Gaofei Tang, Jiabei He, Meng Zhang, Kevin J. Chen	2019	151
8	Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Han Xu, Gaofei Tang, Jin Wei, Kevin J. Chen	2019	19
9	High-Capacitance-Density ${p}$ -GaN Gate Capacitors for High-Frequency Power Integration IEEE Electron Device Letters ·Gaofei Tang, Maria Helena Rocha Dos Santos, Risheng Su, F.-W. Yao, Yih‐Jyh Lin, Jialong Yu, Angela Brown, C. H. Chern, Jason Zachariah, H.C. Tuan, Onea Mihaela, Kevin J. Chen	2018	34
10	Dynamic OFF-State Current (Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -GaN Gate HEMTs With an Ohmic Gate Contact IEEE Electron Device Letters ·Yuru Wang, Mengyuan Hua, Gaofei Tang, Jiacheng Lei, Zheyang Zheng, Jin Wei, Kevin J. Chen	2018	35
11	Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance IEEE Electron Device Letters ·Jiacheng Lei, Jin Wei, Gaofei Tang, Zhaofu Zhang, Qingkai Qian, Zheyang Zheng, Mengyuan Hua, Kevin J. Chen	2018	28
12	High-speed, high-reliability GaN power device with integrated gate driver Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Gaofei Tang, Maria Helena Rocha Dos Santos, Zhaofu Zhang, Jiabei He, Jiacheng Lei, Risheng Su, F.-W. Yao, Yih‐Jyh Lin, Jialong Yu, Angela Brown, C. H. Chern, Jason Zachariah, H.C. Tuan, Onea Mihaela, Kevin J. Chen	2018	66
13	Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform IEEE Electron Device Letters ·Gaofei Tang, Alex Man Ho Kwan, King‐Yuen Wong, Jiacheng Lei, Risheng Su, F.-W. Yao, Yih‐Jyh Lin, Jialong Yu, Jason Zachariah, H.C. Tuan, Onea Mihaela, Kevin J. Chen	2017	89
14	Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination IEEE Electron Device Letters ·Gaofei Tang, Jin Wei, Zhaofu Zhang, Xi Tang, Mengyuan Hua, Hanxing Wang, Kevin J. Chen	2017	39
15	650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode IEEE Electron Device Letters ·Jiacheng Lei, Jin Wei, Gaofei Tang, Zhaofu Zhang, Qingkai Qian, Zheyang Zheng, Mengyuan Hua, Kevin J. Chen	2017	68
16	Normally-Off LPCVD-SiN<italic> <sub>x</sub> </italic>/GaN MIS-FET With Crystalline Oxidation Interlayer IEEE Electron Device Letters ·Mengyuan Hua, Jin Wei, Gaofei Tang, Zhaofu Zhang, Qingkai Qian, Xiangbin Cai, Ning Wang, Kevin J. Chen	2017	72
17	Enhanced dielectric deposition on single-layer MoS₂ with low damage using remote N₂ plasma treatment Nanotechnology ·Qingkai Qian, Zhaofu Zhang, Mengyuan Hua, Gaofei Tang, Jiacheng Lei, Feifei Lan, Yongkuan Xu, Elizabeth A. Wyman, Kevin J. Chen	2017	35
18	Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform IEEE Photonics Technology Letters ·Baikui Li, Xi Tang, Gaofei Tang, Jin Wei, Jiannong Wang, Kevin J. Chen	2016	3
19	Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor IEEE Electron Device Letters ·Jin Wei, Shenghou Liu, Baikui Li, Xi Tang, Yunyou Lu, Cheng Liu, Mengyuan Hua, Zhaofu Zhang, Gaofei Tang, Kevin J. Chen	2015	95
20	Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Jin Wei, Shenghou Liu, Baikui Li, Xi Tang, Yunyou Lu, Cheng Liu, Mengyuan Hua, Zhaofu Zhang, Gaofei Tang, Kevin J. Chen	2015	53

About Gaofei Tang

Gaofei Tang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 38 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (36 papers), Silicon Carbide Semiconductor Technologies (21 papers), Semiconductor materials and devices (19 papers), Ga2O3 and related materials (14 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Semiconductor Quantum Structures and Devices (5 papers), ZnO doping and properties (5 papers) and Radio Frequency Integrated Circuit Design (3 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (681 citations), Electrical and Electronic Engineering (1.4k citations), Atomic and Molecular Physics, and Optics (251 citations) and Materials Chemistry (309 citations). Gaofei Tang has collaborated with scholars based in Hong Kong, China and Taiwan. Frequent co-authors include Kevin J. Chen, Jin Wei, Ruiliang Xie, Hanxing Wang, Mengyuan Hua, Zhaofu Zhang, Jiabei He, Jiacheng Lei, Cheng Liu and Zheyang Zheng. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Power Electronics, Japanese Journal of Applied Physics and physica status solidi (a).

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