Brian Romanczyk

1.6k total citations
58 papers, 1.3k citations indexed

About

Brian Romanczyk is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Brian Romanczyk has authored 58 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Condensed Matter Physics, 50 papers in Electrical and Electronic Engineering and 22 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Brian Romanczyk's work include GaN-based semiconductor devices and materials (51 papers), Radio Frequency Integrated Circuit Design (30 papers) and Semiconductor Quantum Structures and Devices (20 papers). Brian Romanczyk is often cited by papers focused on GaN-based semiconductor devices and materials (51 papers), Radio Frequency Integrated Circuit Design (30 papers) and Semiconductor Quantum Structures and Devices (20 papers). Brian Romanczyk collaborates with scholars based in United States, Italy and India. Brian Romanczyk's co-authors include S. Keller, Umesh K. Mishra, Matthew Guidry, Xun Zheng, Elaheh Ahmadi, Steven Wienecke, Haoran Li, Nirupam Hatui, Christian Wurm and Karine Hestroffer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Brian Romanczyk

57 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Brian Romanczyk United States 20 1.1k 894 482 373 282 58 1.3k
Matthew Guidry United States 20 1.1k 1.0× 831 0.9× 474 1.0× 341 0.9× 256 0.9× 57 1.2k
Junji Kotani Japan 18 910 0.8× 844 0.9× 408 0.8× 323 0.9× 269 1.0× 59 1.1k
Shiping Guo United States 18 1.2k 1.0× 959 1.1× 636 1.3× 436 1.2× 387 1.4× 48 1.4k
J.A. Roussos United States 18 1.1k 1.0× 974 1.1× 498 1.0× 290 0.8× 320 1.1× 49 1.3k
Masahiko Kuraguchi Japan 14 1.3k 1.1× 1.1k 1.2× 610 1.3× 255 0.7× 268 1.0× 30 1.4k
Minhan Mi China 19 936 0.8× 745 0.8× 430 0.9× 225 0.6× 181 0.6× 91 991
Hirokuni Tokuda Japan 17 931 0.8× 750 0.8× 553 1.1× 187 0.5× 255 0.9× 71 1.1k
Yoshiharu Takada Japan 14 1.3k 1.2× 1.1k 1.3× 599 1.2× 265 0.7× 266 0.9× 32 1.4k
Yi Pei United States 20 1.1k 1.0× 883 1.0× 448 0.9× 290 0.8× 230 0.8× 57 1.2k
D. Buttari United States 18 1.3k 1.2× 990 1.1× 625 1.3× 398 1.1× 360 1.3× 39 1.5k

Countries citing papers authored by Brian Romanczyk

Since Specialization
Citations

This map shows the geographic impact of Brian Romanczyk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Brian Romanczyk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Brian Romanczyk more than expected).

Fields of papers citing papers by Brian Romanczyk

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Brian Romanczyk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Brian Romanczyk. The network helps show where Brian Romanczyk may publish in the future.

Co-authorship network of co-authors of Brian Romanczyk

This figure shows the co-authorship network connecting the top 25 collaborators of Brian Romanczyk. A scholar is included among the top collaborators of Brian Romanczyk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Brian Romanczyk. Brian Romanczyk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Romanczyk, Brian, et al.. (2024). Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N. Crystals. 14(6). 485–485. 1 indexed citations
2.
Li, Weiyi, Wenjian Liu, Tanmay Chavan, et al.. (2024). Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 34(2). 183–186. 10 indexed citations
3.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2024). Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz. IEEE Microwave and Wireless Technology Letters. 34(4). 395–398. 9 indexed citations
4.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2023). First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 33(6). 683–686. 20 indexed citations
5.
Li, Weiyi, Brian Romanczyk, Matthew Guidry, et al.. (2023). Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs. IEEE Transactions on Electron Devices. 70(4). 2075–2080. 41 indexed citations
6.
Krishna, Athith, Brian Romanczyk, Nirupam Hatui, et al.. (2022). GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate. IEEE Electron Device Letters. 44(1). 9–12. 11 indexed citations
7.
Liu, Wenjian, Brian Romanczyk, Matthew Guidry, et al.. (2021). 6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates. IEEE Microwave and Wireless Components Letters. 31(6). 748–751. 43 indexed citations
8.
Santi, Carlo De, Fabiana Rampazzo, Xun Zheng, et al.. (2021). Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. Research Padua Archive (University of Padua). 1–2. 5 indexed citations
9.
Guidry, Matthew, Brian Romanczyk, Nirupam Hatui, et al.. (2020). A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1–2. 7 indexed citations
10.
Liu, Wenjian, Brian Romanczyk, Nirupam Hatui, et al.. (2020). Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current. IEEE Electron Device Letters. 41(10). 1468–1471. 8 indexed citations
11.
Bisi, Davide, Steven Wienecke, Brian Romanczyk, et al.. (2020). Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures. IEEE Electron Device Letters. 41(3). 345–348. 22 indexed citations
12.
Koksaldi, Onur S., Brian Romanczyk, Matthew Guidry, et al.. (2020). High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications. Semiconductor Science and Technology. 35(12). 124004–124004. 3 indexed citations
13.
Li, Weiyi, Shubhra S. Pasayat, Matthew Guidry, et al.. (2020). First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel. Semiconductor Science and Technology. 35(7). 75007–75007. 11 indexed citations
14.
Hatui, Nirupam, Athith Krishna, He‐Ping Li, et al.. (2020). Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition. Semiconductor Science and Technology. 35(9). 95002–95002. 17 indexed citations
15.
Romanczyk, Brian, Matthew Guidry, Xun Zheng, et al.. (2020). Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs. IEEE Transactions on Electron Devices. 67(4). 1542–1546. 25 indexed citations
16.
Pasayat, Shubhra S., Elaheh Ahmadi, Brian Romanczyk, et al.. (2019). First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE. Semiconductor Science and Technology. 34(4). 45009–45009. 20 indexed citations
17.
Romanczyk, Brian. (2019). Demonstration of Record-High mm-Wave Power Performance using N-Polar Gallium Nitride HEMTs. RIT Scholar Works (Rochester Institute of Technology). 25(1). 24. 1 indexed citations
18.
Gupta, Chirag, Yusuke Tsukada, Brian Romanczyk, et al.. (2019). First demonstration of improvement in hole conductivity in c -plane III-Nitrides through application of uniaxial strain. Japanese Journal of Applied Physics. 58(3). 30908–30908. 18 indexed citations
19.
Romanczyk, Brian, Steven Wienecke, Matthew Guidry, et al.. (2017). Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs. IEEE Transactions on Electron Devices. 65(1). 45–50. 174 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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