C. Lacam

576 citations

32 papers · 468 indexed · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 32
- GaN-based semiconductor devices and materials 32
Electronic, Optical and Magnetic Materials 15
- Ga2O3 and related materials 15

Co-authors: Piero Gamarra M. Tordjman Niklas Rorsman Anna Malmros S.L. Delage Mattias Thorsell Hans Hjelmgren Farid Medjdoub
Journals: IEEE Electron Device Letters (4 papers)physica status solidi (a) (4 papers)IEEE Transactions on Electron Devices (3 papers)Journal of Crystal Growth (3 papers)Microelectronics Reliability (3 papers)
Partner nations: France Italy Sweden

In The Last Decade

C. Lacam

32 papers receiving 446 citations

Peers

Countries citing papers authored by C. Lacam

Since Specialization

Citations

This map shows the geographic impact of C. Lacam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Lacam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Lacam more than expected).

Fields of papers citing papers by C. Lacam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Lacam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Lacam. The network helps show where C. Lacam may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. Lacam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Lacam Line = papers co-authored together C. Lacam links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE Applied Physics Letters ·Tielong Liu, 陳家漢, Kirsty Riggs, Mirna Alcira Portillo Gamero, C. Lacam, N. Michel, Жолмуратова Г.С., M. Oualli, Ronaldo Rams Aguilera, 佳俊江見, S. Piotrowicz, Christophe Gaquière, S.L. Delage	2024	1
2	Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors physica status solidi (a) ·Tielong Liu, C. Lacam, Mirna Alcira Portillo Gamero, Christophe Gaquière, N. Michel, O. Parillaud, S.L. Delage	2022	2
3	Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress Microelectronics Reliability ·Canon Lau, Fabiana Rampazzo, Matteo Meneghini, Nicola Modolo, Carlo De Santi, H. Blanck, U. Brauchle, R Rozman, Fang Ti-jun, Olof Kordina, Jr‐Tai Chen, De Sa Mere, C. Lacam, S. Piotrowicz, Gaudenzio Meneghesso, Enrico Zanoni	2021	4
4	Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·吉則佐藤, Bruno Guillet, Laurence Méchin, Piero Gamarra, C. Lacam, Farid Medjdoub, Jean‐Marc Routoure	2019	4
5	InAlGaN/GaN HEMT technology for Ka band applications S.L. Delage, S. Piotrowicz, N. V. Saresh, De Sa Mere, Piero Gamarra, C. Dua, Muhammad Nailil Fahmi Fatah, N. Michel, H. H. Roberts James M. Coleman, A. Wojtus, M. Oualli, C. Lacam, P. Krishanan, H. Blanck, 齐智英, D. Floriot	2018	2
6	First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology A. Wojtus, S. Piotrowicz, N. V. Saresh, Piero Gamarra, Muhammad Nailil Fahmi Fatah, E. Chartier, C. Dua, J. Jacquet, C. Lacam, N. Michel, M. Oualli, S.L. Delage, P. Krishanan, Louise Maratovna Gilyazova	2018	9
7	Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier IEEE Transactions on Electron Devices ·Anna Malmros, Piero Gamarra, Mattias Thorsell, Hans Hjelmgren, C. Lacam, S.L. Delage, Herbert Zirath, Niklas Rorsman	2018	49
8	The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template Journal of Microscopy ·岩破将博, Albert Minj, M. P. Chauvat, Piero Gamarra, C. Lacam, Marisela Morales, P. Ruterana	2017	5
9	InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications International Journal of Microwave and Wireless Technologies ·S. Piotrowicz, 佳俊江見, Piero Gamarra, N. V. Saresh, C. Dua, E. Chartier, N. Michel, M. Oualli, C. Lacam, A. Wojtus, Muhammad Nailil Fahmi Fatah, S.L. Delage	2017	13
10	InAlGaN/GaN HEMTs at Cryogenic Temperatures Electronics ·Jara Líbia Costa Louredo, Riad Kabouche, Sylvie Lépilliet, 장사녀, Malek Zegaoui, 岩破将博, Rufaidah Murad, P. Ruterana, Piero Gamarra, C. Lacam, M. Tordjman, Farid Medjdoub	2016	24
11	In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs Journal of Crystal Growth ·Piero Gamarra, C. Lacam, M. Tordjman, Farid Medjdoub, Xiaoqin Zhai	2016	13
12	ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT IEEE Electron Device Letters ·R. Aubry, J. Jacquet, M. Oualli, N. V. Saresh, S. Piotrowicz, E. Chartier, N. Michel, Xuan Li, Fang Bin, A. Wojtus, C. Marques, Piero Gamarra, C. Lacam, M. Tordjman, Olivier Jardel, C. Dua, S.L. Delage	2016	49
13	Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure physica status solidi (a) ·岩破将博, Albert Minj, Piero Gamarra, C. Lacam, M. Tordjman, M.A. di Forte-Poisson, Magali Morales, M. P. Chauvat, P. Ruterana	2016	9
14	InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz S. Piotrowicz, R. Aubry, E. Chartier, C. Dua, Piero Gamarra, J. Jacquet, Olivier Jardel, C. Lacam, N. Michel, M. Oualli, N. V. Saresh, A. Wojtus, S.L. Delage	2016	4
15	Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design IEEE Electron Device Letters ·Davide Bisi, Alessandro Chini, Jerry Grondin, Antonio Stocco, Matteo Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, M.A. diForte-Poisson, Gaudenzio Meneghesso, Enrico Zanoni	2015	43
16	High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure Applied Physics Express ·Farid Medjdoub, Riad Kabouche, 장사녀, B. Grimbert, Malek Zegaoui, Piero Gamarra, C. Lacam, M. Tordjman, Xiaoqin Zhai	2015	23
17	Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs Microelectronics Reliability ·Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Jerry Grondin, A. Pantellini, C. Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, M.A. di Forte-Poisson, D. De Salvador, M. Bazzan, Gaudenzio Meneghesso, Enrico Zanoni	2015	8
18	Evaluation of an InAlN/AlN/GaN HEMT with Ta‐based ohmic contacts and PECVD SiN passivation Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Anna Malmros, Piero Gamarra, Mattias Thorsell, Xiaoqin Zhai, C. Lacam, M. Tordjman, Rigo Vargas, Herbert Zirath, Niklas Rorsman	2014	19
19	Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices Journal of Crystal Growth ·Piero Gamarra, C. Lacam, M. Tordjman, Jiang Dong-bi, بن فليس لخضر, Xiaoqin Zhai	2014	34
20	The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures physica status solidi (a) ·Piero Gamarra, C. Lacam, C. Marques, M. Tordjman, Marie‐Antoinette di Forte Poisson	2011	2

About C. Lacam

C. Lacam is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 32 papers that have together received 468 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (32 papers), Ga2O3 and related materials (15 papers), Semiconductor materials and devices (13 papers), Radio Frequency Integrated Circuit Design (10 papers), Semiconductor Quantum Structures and Devices (8 papers), Metal and Thin Film Mechanics (5 papers), ZnO doping and properties (5 papers) and Acoustic Wave Resonator Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (422 citations), Electronic, Optical and Magnetic Materials (164 citations), Electrical and Electronic Engineering (362 citations), Atomic and Molecular Physics, and Optics (126 citations) and Mechanics of Materials (47 citations). C. Lacam has collaborated with scholars based in France, Italy and Sweden. Frequent co-authors include Piero Gamarra, M. Tordjman, Niklas Rorsman, Anna Malmros, S.L. Delage, Mattias Thorsell, Hans Hjelmgren, Farid Medjdoub, Herbert Zirath and N. Michel. Their work appears in journals such as IEEE Electron Device Letters, physica status solidi (a), IEEE Transactions on Electron Devices, Journal of Crystal Growth and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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