V. Benevent

431 total citations
14 papers, 222 citations indexed

About

V. Benevent is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, V. Benevent has authored 14 papers receiving a total of 222 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in V. Benevent's work include Semiconductor materials and devices (10 papers), Silicon and Solar Cell Technologies (5 papers) and Thin-Film Transistor Technologies (5 papers). V. Benevent is often cited by papers focused on Semiconductor materials and devices (10 papers), Silicon and Solar Cell Technologies (5 papers) and Thin-Film Transistor Technologies (5 papers). V. Benevent collaborates with scholars based in France, Czechia and Belgium. V. Benevent's co-authors include Frédéric Sanchette, C. Ducros, Jean‐Michel Hartmann, J.F. Damlencourt, T. Billon, M. Veillerot, Jean‐Paul Barnes, J. Aubin, A. Halimaoui and C. Deguet and has published in prestigious journals such as Thin Solid Films, Surface and Coatings Technology and Solid-State Electronics.

In The Last Decade

V. Benevent

13 papers receiving 216 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. Benevent France	8	133	80	78	73	46	14	222
Nicolas Mauran France	8	208 1.6×	99 1.2×	117 1.5×	24 0.3×	40 0.9×	19	339
J. Laconte Belgium	8	198 1.5×	63 0.8×	67 0.9×	25 0.3×	150 3.3×	12	276
Tianbao Xie United States	8	136 1.0×	147 1.8×	65 0.8×	23 0.3×	31 0.7×	19	235
Andrew Greene United States	9	161 1.2×	48 0.6×	13 0.2×	53 0.7×	55 1.2×	33	234
A. Reznicek United States	12	245 1.8×	87 1.1×	24 0.3×	75 1.0×	80 1.7×	35	341
Christoph Flötgen Austria	8	202 1.5×	38 0.5×	33 0.4×	20 0.3×	37 0.8×	18	226
H. A. C. Tilmans Belgium	8	237 1.8×	47 0.6×	46 0.6×	19 0.3×	143 3.1×	25	292
Jacques Rabier France	7	72 0.5×	141 1.8×	53 0.7×	44 0.6×	51 1.1×	23	210
Shi He China	9	174 1.3×	147 1.8×	37 0.5×	18 0.2×	44 1.0×	34	266
M. Lungu Romania	9	26 0.2×	95 1.2×	36 0.5×	36 0.5×	30 0.7×	26	161

Countries citing papers authored by V. Benevent

Since Specialization

Citations

This map shows the geographic impact of V. Benevent's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Benevent with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Benevent more than expected).

Fields of papers citing papers by V. Benevent

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Benevent. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Benevent. The network helps show where V. Benevent may publish in the future.

Co-authorship network of co-authors of V. Benevent

This figure shows the co-authorship network connecting the top 25 collaborators of V. Benevent. A scholar is included among the top collaborators of V. Benevent based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Benevent. V. Benevent is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

14 of 14 papers shown

Fenouillet-Béranger, C., Jean‐Michel Hartmann, Philippe Rodriguez, et al.. (2016). Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors. ECS Transactions. 75(8). 51–58. 1 indexed citations

Aubin, J., Jean‐Michel Hartmann, & V. Benevent. (2015). Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane. Thin Solid Films. 602. 36–42. 11 indexed citations

Hartmann, J. M., V. Benevent, Vincent Reboud, et al.. (2015). Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition. Thin Solid Films. 602. 13–19. 2 indexed citations

Hartmann, Jean‐Michel, V. Benevent, Chutchamon Sirisopanaporn, et al.. (2014). Very Low Temperature (Cyclic) Deposition / Etch of In-Situ Raised Sources and Drains. ECS Transactions. 64(6). 941–957.

Guilloy, K., N. Pauc, Éric Robin, et al.. (2014). Band structure engineering of strained and doped germanium nanowires and 2D layers. 39. 233–234. 1 indexed citations

Hartmann, Jean‐Michel, V. Benevent, Chutchamon Sirisopanaporn, et al.. (2014). Very Low Temperature (Cyclic) Deposition / Etch of In Situ Boron-Doped SiGe Raised Sources and Drains. ECS Journal of Solid State Science and Technology. 3(11). P382–P390. 8 indexed citations

Hartmann, Jean‐Michel, V. Benevent, Jean‐Paul Barnes, M. Veillerot, & C. Deguet. (2013). Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: I. The elementary process steps. Semiconductor Science and Technology. 28(2). 25017–25017. 15 indexed citations

Hartmann, Jean‐Michel, V. Benevent, Jean‐Paul Barnes, et al.. (2013). Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: II. The CDE features. Semiconductor Science and Technology. 28(2). 25018–25018. 8 indexed citations

Hartmann, Jean‐Michel, V. Benevent, M. Veillerot, & A. Halimaoui. (2013). Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe. Thin Solid Films. 557. 19–26. 11 indexed citations

10.

Hartmann, Jean‐Michel, V. Benevent, Jean‐Paul Barnes, et al.. (2013). Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains. Solid-State Electronics. 83. 10–17. 12 indexed citations

11.

Hartmann, Jean‐Michel, V. Benevent, J.F. Damlencourt, & T. Billon. (2011). A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers. Thin Solid Films. 520(8). 3185–3189. 40 indexed citations

12.

Damlencourt, Jean‐François, D. Lafond, V. Benevent, et al.. (2009). Fabrication of Suspended Ge-rich Nanowires by Ge Enrichment Technique for Multi-channel Devices. ECS Transactions. 19(1). 207–212. 2 indexed citations

13.

Ducros, C., V. Benevent, P. Juliet, & Frédéric Sanchette. (2002). Characterisation of inductively amplified magnetron devices implanted in an industrial PVD system. Surface and Coatings Technology. 163-164. 641–648. 1 indexed citations

14.

Ducros, C., V. Benevent, & Frédéric Sanchette. (2002). Deposition, characterization and machining performance of multilayer PVD coatings on cemented carbide cutting tools. Surface and Coatings Technology. 163-164. 681–688. 110 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact