V. Benevent

431 citations

14 papers · 222 indexed · h-index 8

Impact in

Mechanics of Materials
- Metal and Thin Film Mechanics
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies

Papers in ⓘ

Electrical and Electronic Engineering 13
- Semiconductor materials and devices 10
- Silicon and Solar Cell Technologies 5
- Thin-Film Transistor Technologies 5
- Photonic and Optical Devices 3
- Advancements in Semiconductor Devices and Circuit Design 3
Atomic and Molecular Physics, and Optics 5
- Semiconductor materials and interfaces 3
- Semiconductor Quantum Structures and Devices 2

Co-authors: C. Ducros (2 shared papers)Frédéric Sanchette (2 shared papers)Jean‐Michel Hartmann (11 shared papers)J.F. Damlencourt (2 shared papers)T. Billon (1 shared paper)M. Veillerot (6 shared papers)Jean‐Paul Barnes (3 shared papers)J. Aubin (1 shared paper)
Journals: Thin Solid Films (4 papers)Semiconductor Science and Technology (2 papers)Surface and Coatings Technology (2 papers)Solid-State Electronics (1 paper)ECS Journal of Solid State Science and Technology (1 paper)
Partner nations: France Czechia Switzerland

In The Last Decade

V. Benevent

13 papers receiving 216 citations

Peers

Countries citing papers authored by V. Benevent

Since Specialization

Citations

This map shows the geographic impact of V. Benevent's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Benevent with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Benevent more than expected).

Fields of papers citing papers by V. Benevent

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Benevent. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Benevent. The network helps show where V. Benevent may publish in the future.

Co-authors

The 25 scholars most cited alongside V. Benevent, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Benevent Line = papers co-authored together V. Benevent links everyone, so they are left out of the graph.

All Works

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14 of 14 papers shown

#	Work
1	Deposition, characterization and machining performance of multilayer PVD coatings on cemented carbide cutting tools Surface and Coatings Technology ·C. Ducros, V. Benevent, Frédéric Sanchette	2002	110
2	A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers Thin Solid Films ·Jean‐Michel Hartmann, V. Benevent, J.F. Damlencourt, T. Billon	2011	40
3	Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: I. The elementary process steps Semiconductor Science and Technology ·Jean‐Michel Hartmann, V. Benevent, Jean‐Paul Barnes, M. Veillerot, C. Deguet	2013	15
4	Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Solid-State Electronics ·Jean‐Michel Hartmann, V. Benevent, Jean‐Paul Barnes, M. Veillerot, D. Lafond, J.F. Damlencourt, S. Morvan, B. Prévitali, F. Andrieu, N. Loubet, D. Dutartre	2013	12
5	Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane Thin Solid Films ·J. Aubin, Jean‐Michel Hartmann, V. Benevent	2015	11
6	Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe Thin Solid Films ·Jean‐Michel Hartmann, V. Benevent, M. Veillerot, A. Halimaoui	2013	11
7	Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: II. The CDE features Semiconductor Science and Technology ·Jean‐Michel Hartmann, V. Benevent, Jean‐Paul Barnes, M. Veillerot, B. Prévitali, P. Batude	2013	8
8	Very Low Temperature (Cyclic) Deposition / Etch of In Situ Boron-Doped SiGe Raised Sources and Drains ECS Journal of Solid State Science and Technology ·Jean‐Michel Hartmann, V. Benevent, Agathe André, Chutchamon Sirisopanaporn, M. Veillerot, M.-P. Samson, Sylvain Barraud, Z. Essa, B. Sermage	2014	8
9	Fabrication of Suspended Ge-rich Nanowires by Ge Enrichment Technique for Multi-channel Devices ECS Transactions ·Emeline Saracco, Jean‐François Damlencourt, D. Lafond, S. Bernasconi, V. Benevent, Pierette Rivallin, Y. Morand, Jean‐Michel Hartmann, P. Gautier, C. Vizioz, T. Ernst, Caroline Bonafos, Pier Fransesco Fazzini	2009	2
10	Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition Thin Solid Films ·J. M. Hartmann, V. Benevent, Vincent Reboud, A. Chelnokov, K. Guilloy, N. Pauc, V. Calvo	2015	2
11	Characterisation of inductively amplified magnetron devices implanted in an industrial PVD system Surface and Coatings Technology ·C. Ducros, V. Benevent, P. Juliet, Frédéric Sanchette	2002	1
12	Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors ECS Transactions ·Cao-Minh Vincent Lu, C. Fenouillet-Béranger, Jean‐Michel Hartmann, Philippe Rodriguez, V. Benevent, Marie-Pierre Samson, B. Prévitali, C. Tabone, M. Cassé, F. Allain, G. Romano, Laurent Brunet, P. Batude, T. Skotnicki, M. Vinet	2016	1
13	Band structure engineering of strained and doped germanium nanowires and 2D layers K. Guilloy, N. Pauc, Éric Robin, V. Calvo, P. Gentile, Kevin Foubert, J. Rothman, Vincent Reboud, A. Chelnokov, V. Benevent, Jean‐Michel Hartmann	2014	1
14	Very Low Temperature (Cyclic) Deposition / Etch of In-Situ Raised Sources and Drains ECS Transactions ·Jean‐Michel Hartmann, V. Benevent, Agathe André, Chutchamon Sirisopanaporn, M. Veillerot, Marie-Pierre Samson, Sylvain Barraud	2014	0

About V. Benevent

V. Benevent is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Biomedical Engineering, having authored 14 papers that have together received 222 indexed citations. Recurring topics across this work include Semiconductor materials and devices (10 papers), Silicon and Solar Cell Technologies (5 papers), Thin-Film Transistor Technologies (5 papers), Photonic and Optical Devices (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers), Semiconductor materials and interfaces (3 papers), Semiconductor Quantum Structures and Devices (2 papers) and Copper Interconnects and Reliability (2 papers). The work is most often cited by research in Mechanics of Materials (78 citations), Electrical and Electronic Engineering (133 citations), Mechanical Engineering (73 citations), Materials Chemistry (80 citations) and Atomic and Molecular Physics, and Optics (34 citations). V. Benevent has collaborated with scholars based in France, Czechia and Switzerland. Frequent co-authors include C. Ducros, Frédéric Sanchette, Jean‐Michel Hartmann, J.F. Damlencourt, T. Billon, M. Veillerot, Jean‐Paul Barnes, J. Aubin, C. Deguet and A. Halimaoui. Their work appears in journals such as Thin Solid Films, Semiconductor Science and Technology, Surface and Coatings Technology, Solid-State Electronics and ECS Journal of Solid State Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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