C. Comboroure

829 total citations
12 papers, 364 citations indexed

About

C. Comboroure is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Comboroure has authored 12 papers receiving a total of 364 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 9 papers in Biomedical Engineering and 1 paper in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Comboroure's work include Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor materials and devices (8 papers) and Nanowire Synthesis and Applications (6 papers). C. Comboroure is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor materials and devices (8 papers) and Nanowire Synthesis and Applications (6 papers). C. Comboroure collaborates with scholars based in France, Japan and Switzerland. C. Comboroure's co-authors include C. Vizioz, Sylvain Barraud, O. Faynot, Jean‐Michel Hartmann, V. Maffini-Alvaro, R. Coquand, T. Poiroux, M. Cassé, F. Aussenac and Marie-Pierre Samson and has published in prestigious journals such as IEEE Electron Device Letters, Solid-State Electronics and Microelectronic Engineering.

In The Last Decade

C. Comboroure

11 papers receiving 351 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Comboroure France	9	341	128	40	33	6	12	364
F. Allain France	13	549 1.6×	78 0.6×	25 0.6×	29 0.9×	4 0.7×	36	559
Shiying Xiong United States	5	419 1.2×	65 0.5×	23 0.6×	30 0.9×	3 0.5×	5	435
Gianpietro Carnevale Italy	7	157 0.5×	55 0.4×	28 0.7×	42 1.3×	5 0.8×	16	187
A. Budrevich United States	5	324 1.0×	98 0.8×	30 0.8×	30 0.9×	6 1.0×	11	347
J. Sandford United States	5	490 1.4×	118 0.9×	49 1.2×	60 1.8×	7 1.2×	6	518
R. Schreutelkamp Belgium	10	257 0.8×	51 0.4×	41 1.0×	39 1.2×	6 1.0×	31	276
F.N. Cubaynes Belgium	9	369 1.1×	60 0.5×	48 1.2×	34 1.0×	9 1.5×	26	388
C. Ortolland Belgium	11	380 1.1×	55 0.4×	21 0.5×	61 1.8×	13 2.2×	37	392
Farid Sebaai Belgium	10	397 1.2×	91 0.7×	85 2.1×	56 1.7×	6 1.0×	41	411
F. Andrieu France	15	803 2.4×	94 0.7×	50 1.3×	52 1.6×	5 0.8×	60	810

Countries citing papers authored by C. Comboroure

Since Specialization

Citations

This map shows the geographic impact of C. Comboroure's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Comboroure with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Comboroure more than expected).

Fields of papers citing papers by C. Comboroure

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Comboroure. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Comboroure. The network helps show where C. Comboroure may publish in the future.

Co-authorship network of co-authors of C. Comboroure

This figure shows the co-authorship network connecting the top 25 collaborators of C. Comboroure. A scholar is included among the top collaborators of C. Comboroure based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Comboroure. C. Comboroure is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Barraud, Sylvain, V. Lapras, B. Prévitali, et al.. (2017). Performance and design considerations for gate-all-around stacked-NanoWires FETs. HAL (Le Centre pour la Communication Scientifique Directe). 29.2.1–29.2.4. 113 indexed citations

Cassé, M., Sylvain Barraud, R. Coquand, et al.. (2013). (Invited) Strain-Enhanced Performance of Si-Nanowire FETs. ECS Transactions. 53(3). 125–136. 4 indexed citations

Koyama, Masahiro, M. Cassé, R. Coquand, et al.. (2013). Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs. Solid-State Electronics. 84. 46–52. 17 indexed citations

Coquand, R., Sylvain Barraud, M. Cassé, et al.. (2013). Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10nm width. Solid-State Electronics. 88. 32–36. 15 indexed citations

Barraud, Sylvain, R. Coquand, M. Cassé, et al.. (2012). Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm. IEEE Electron Device Letters. 33(11). 1526–1528. 97 indexed citations

Coquand, R., Sylvain Barraud, M. Cassé, et al.. (2012). Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width. 37–40. 42 indexed citations

Wacquez, R., M. Vinet, M. Pierre, et al.. (2010). Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm. 193–194. 14 indexed citations

Comboroure, C., C. Vizioz, S. Barnola, et al.. (2008). Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(6). 2583–2586. 6 indexed citations

Brianceau, P., et al.. (2008). Improvement of high resolution lithography by using amorphous carbon hard mask. Microelectronic Engineering. 85(5-6). 800–804. 29 indexed citations

10.

Batude, P., M. Vinet, A. Pouydebasque, et al.. (2008). Enabling 3D Monolithic Integration. ECS Transactions. 16(8). 47–54. 17 indexed citations

11.

Barnola, S., C. Vizioz, Nathalie Vulliet, et al.. (2008). Dry Etch Challenges in Gate All Around Devices for sub 32 nm Applications. ECS Transactions. 16(10). 923–934. 10 indexed citations

12.

Mollard, L., S. Tedesco, B. Dal’zotto, et al.. (2001). Hybrid deep UV–e-beam lithography for the fabrication of dual damascene structures. Microelectronic Engineering. 57-58. 269–275.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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