A. Grouillet

400 citations

35 papers · 290 indexed · h-index 11

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Plasma Diagnostics and Applications
Computational Mechanics
- Ion-surface interactions and analysis

Papers in

Electrical and Electronic Engineering 33
- Integrated Circuits and Semiconductor Failure Analysis 20
- Semiconductor materials and devices 18
- Silicon and Solar Cell Technologies 15
- Advancements in Semiconductor Devices and Circuit Design 15
- Semiconductor Lasers and Optical Devices 3
- Thin-Film Transistor Technologies 2
Computational Mechanics 6
- Ion-surface interactions and analysis 5

Co-authors: D. Lenoble S. Valette A. Fournier Hervé Denis E. André Svetlana Radovanov Christophe Cardinaud Gilles Cartry
Journals: Surface and Coatings Technology (3 papers)Electronics Letters (2 papers)Applied Surface Science (1 paper)Journal of Applied Physics (1 paper)IEEE Transactions on Plasma Science (1 paper)
Partner nations: France United States Switzerland

In The Last Decade

A. Grouillet

33 papers receiving 266 citations

Peers

Countries citing papers authored by A. Grouillet

Since Specialization

Citations

This map shows the geographic impact of A. Grouillet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Grouillet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Grouillet more than expected).

Fields of papers citing papers by A. Grouillet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Grouillet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Grouillet. The network helps show where A. Grouillet may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Grouillet, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Grouillet Line = papers co-authored together A. Grouillet links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Ion energy distributions in a pulsed plasma doping system Journal of Applied Physics ·Svetlana Radovanov, Yongmin Zhang, Rajesh Dorai, Javed A. Kamran, Richard Clark Wooldridge, Christophe Cardinaud, Gilles Cartry, D. Lenoble, A. Grouillet	2005	17
2	TCAD modelling of PLAD implantations and application to sub-65nm technological nodes [plasma doping] Ewa Rykała, Marzena Agata Folusz, D. Lenoble, A. Grouillet, Huizai Yao, Maria Vitória Oliveira da Silva, В.А. Королёв, Wekesi Rodgers Mukimba, John Doami, H. Jaouen, S.R. Walther, P. Naur, Hawkey Kate	2004	1
3	Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology Surface and Coatings Technology ·Huizai Yao, A. Grouillet, M. Juhel, Kgaugelo Edward Lekota, D. Lenoble, Javed A. Kamran, S.R. Walther, Shamima Hossain, Yongmin Zhang, G Reimer	2004	7
4	Ultra-low cost and high performance 65nm CMOS device fabricated with plasma doping Huizai Yao, B. Duriez, A. Grouillet, F. Arnaud, B. Tavel, F. Wacquant, P.A. Stolk, Mr.Amit kumar yadav, I Wayan Gde Wredhira Wirartama, G Reimer, Yongmin Zhang, Soma Aryana, H. Hausdorf, D. Lenoble	2004	10
5	Improved Vt and Ioff characteristics of NMOS transistors featuring ultra-shallow junctions obtained by plasma doping (PLAD) A. Pouydebasque, Markus Müller, F. Bœuf, D. Lenoble, Huizai Yao, A. Grouillet, A. Halimaoui, Aisha Mutiara Savitri, D. Delille, T. Skotnicki	2004	3
6	USJ formation using pulsed plasma doping Surface and Coatings Technology ·G Reimer, D. Lenoble, Kgaugelo Edward Lekota, Huizai Yao, A. Grouillet, J L Coulehan, H. Hausdorf, J. Reichert, Javed A. Kamran, Yongmin Zhang, Bon‐Wook Koo, Bahram Ghavi, Soma Aryana	2004	12
7	Dopant channeling as a function of implant angle for low energy applications S.R. Walther, Hawkey Kate, Soma Aryana, A. Grouillet, Douglas A. Brown	2003	3
8	Comparison of ultra-shallow junctions with PLAD and beamline implantation Susan B. Felch, Sun Jing-ran, S.R. Walther, Javed A. Kamran, Bon‐Wook Koo, R.B. Liebert, D. Lenoble, A. Grouillet	2003	4
9	The fabrication of advanced transistors with plasma doping Surface and Coatings Technology ·D. Lenoble, A. Grouillet	2002	16
10	0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters Solid-State Electronics ·Luise Hutzschenreuter, C. Raynaud, O. Faynot, J.L. Pelloie, C. Tabone, A. Grouillet, F. Martín, G. Dambrine, Mikaela Soares Silva, Jae-Woo Song, P. Llinarès, J. Sevenhans, Luc Harnist, G. D. Fletcher, Denis Flandre, Vincent Dessard, D. Vanhoenacker, Jean‐Pierre Raskin	2002	12
11	Characterization and simulation of the parasitic BJT in 0.1um partially-depleted SOI devices C. Fenouillet-Béranger, O. Faynot, J. de Pontcharra, C. Tabone, Leshchenko Hanna, A. Grouillet, J.L. Pelloie, Alessandra M. Cataldo	2001	0
12	Post-Oxidation Enhanced Diffusion of Low-Energy Implanted Boron in Ultra-Shallow P⁺/N Junctions Formation MRS Proceedings ·D. Lenoble, A. Halimaoui, A. Grouillet	2000	1
13	High performance 0.12 um nMOSFETs with nitrogen implanted epitaxial channels European Solid-State Device Research Conference ·E. Josse, T. Skotnicki, J.L. Regolini, A. Grouillet, C. Papadas	1999	1
14	Plasma doping for shallow junctions Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Matthew Goeckner, Susan B. Felch, Javed A. Kamran, D. Lenoble, 達也林, A. Grouillet, Anindya Ghasani, B Hallay, GIOVANNA RAMOS GARCEZ	1999	24
15	Comparative Analysis of SOI Floating-Body and DTMOS with Bulk Devices for 1V Operation O. Faynot, J.L. Pelloie, Philippe Flatresse, C. Raynaud, A. Grouillet, J. Z. Zhang, Maxine Lavon Montgomery, J.-M. Bonnetblanc	1999	2
16	Large - Angle - Tilt - Implanted - Base (LATIB) for Walled - Emitter Bipolar Transistors European Solid-State Device Research Conference ·Gongbing Guo, 박을용, Jing Huang, A. Grouillet, Olga González Calderón, A. Chantre, G. Vincent	1996	1
17	Channel Engineering by Heavy Ion Implants European Solid-State Device Research Conference ·T. Skotnicki, Michael Green, D. Mathiot, M. Gauneau, A. Grouillet, C. d’Anterroches, E. André, Pierre Bouillon, M. Haond	1994	6
18	Low-loss PECVD silica channel waveguides for optical communications Electronics Letters ·Lukman Obasanjo Adebiyi, Larissa Emanuele da Silva Rodrigues de OLIVEIRA, Hervé Denis, S. Valette, A. Fournier, A. Grouillet	1990	51
19	Temperature dependence of radiation induced defect creation in a-SiO2 Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·R. A. B. Devine, A. Grouillet, Víctor García Sandoval	1988	4
20	Recoil implantation of oxygen from SiO2 thin films on silicon Nuclear Instruments and Methods ·Ankit Pathania, F. Ferrieu, A. Grouillet, A. Golański, J. P. Gailliard, E. Ligeon	1981	11

About A. Grouillet

A. Grouillet is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Ceramics and Composites, Hardware and Architecture and Surfaces, Coatings and Films, having authored 35 papers that have together received 290 indexed citations. Recurring topics across this work include Integrated Circuits and Semiconductor Failure Analysis (20 papers), Semiconductor materials and devices (18 papers), Silicon and Solar Cell Technologies (15 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Ion-surface interactions and analysis (5 papers), Semiconductor materials and interfaces (3 papers), Semiconductor Lasers and Optical Devices (3 papers) and Thin-Film Transistor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (257 citations), Computational Mechanics (58 citations), Atomic and Molecular Physics, and Optics (68 citations), Mechanics of Materials (49 citations) and Surfaces, Coatings and Films (13 citations). A. Grouillet has collaborated with scholars based in France, United States and Switzerland. Frequent co-authors include D. Lenoble, S. Valette, A. Fournier, Hervé Denis, E. André, Svetlana Radovanov, Christophe Cardinaud, Gilles Cartry, D. Débarre and Susan B. Felch. Their work appears in journals such as Surface and Coatings Technology, Electronics Letters, Applied Surface Science, Journal of Applied Physics and IEEE Transactions on Plasma Science.

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