This map shows the geographic impact of Hiroshi Iwai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroshi Iwai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroshi Iwai more than expected).
This network shows the impact of papers produced by Hiroshi Iwai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroshi Iwai. The network helps show where Hiroshi Iwai may publish in the future.
Co-authorship network of co-authors of Hiroshi Iwai
This figure shows the co-authorship network connecting the top 25 collaborators of Hiroshi Iwai.
A scholar is included among the top collaborators of Hiroshi Iwai based on the total number of
citations received by their joint publications. Widths of edges
represent the number of papers authors have co-authored together.
Node borders
signify the number of papers an author published with Hiroshi Iwai. Hiroshi Iwai is excluded from
the visualization to improve readability, since they are connected to all nodes in the network.
All Works
20 of 20 papers shown
1.
Ohmori, Kenji, Wei Feng, S. Sato, et al.. (2011). Direct real-time observation of channel potential fluctuation correlated to random telegraph noise of drain current using nanowire MOSFETs with four-probe terminals. Symposium on VLSI Technology. 202–203.2 indexed citations
Iwai, Hiroshi. (2009). Si MOSFET roadmap for 22nm and beyond. 1–4.3 indexed citations
4.
Misra, D., Hiroshi Iwai, Yaw S. Obeng, Toyohiro Chikyow, & Jan Vanhellemont. (2008). Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing.6 indexed citations
5.
Umezawa, Naoto, Kuniyuki Kakushima, Parhat Ahmet, et al.. (2006). Charged defects reduction in gate insulator with multivalent materials. Symposium on VLSI Technology. 200–201.1 indexed citations
6.
Iwai, Hiroshi, et al.. (2006). Measurement of Radio Wave Propagation in a Japanese House at 5GHz.. 106(40). 23–28.1 indexed citations
7.
Misra, D., Hiroshi Iwai, & Hei Wong. (2005). High-k gate dielectrics. The Electrochemical Society Interface. 14(2). 30–34.13 indexed citations
8.
Sakaguchi, Kei, et al.. (2005). Theoretical and Experimental Verification of the Effects of Mutual Coupling on a 2 × 2 MIMO System. 104(676). 117–122.3 indexed citations
9.
Sakaguchi, Kei, et al.. (2004). B-1-198 Spatial Fading Emulator dedicated for Performance Evaluation of Diversity Antennas mounted on Mobile Terminals, Part1. 2004(1). 198.4 indexed citations
Ogawa, K., et al.. (2002). A High-Precision Real Human Phantom for EM Evaluation of Handheld Terminal Antennas in a Talk Situation. 85(5). 676–686.
12.
Iwai, Hiroshi, et al.. (2001). A Low-Profile Bi-Directional Cavity Antenna with Broadband Impedance Characteristics. IEICE Transactions on Communications. 84(9). 2490–2497.2 indexed citations
13.
Iwai, Hiroshi. (2000). Problems and solutions for downsizing CMOS below 0.1μm.1 indexed citations
14.
Fujimoto, Ryuichi, Shoji Otaka, Hiroshi Iwai, & Hiroshi Tanimoto. (1998). A 1.5 GHz CMOS Low Noise Amplifier. IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences. 81(3). 382–388.1 indexed citations
15.
Fiegna, C., et al.. (1994). Monte Carlo analysis of velocity overshoot effects in bipolar devices with and without an i-layer. IEICE Transactions on Electronics. 174–178.
16.
Iwai, Hiroshi. (1993). CMOS Device Architecture and Technology for the 0.25 Micron to 0.025 Micron Generations. European Solid-State Device Research Conference. 513–520.5 indexed citations
17.
Ohguro, T., T. Morimoto, Akira Nishiyama, Y. Ushiku, & Hiroshi Iwai. (1993). Comparison of Ti and Ni salicides as regards the electrical conductance of silicided films. European Solid-State Device Research Conference. 481–484.2 indexed citations
18.
Morimoto, T., H.S. Momose, Kikuo Yamabe, & Hiroshi Iwai. (1990). Prevention of boron penetration from p + poly gate by RTN produced thin gate oxide. European Solid-State Device Research Conference. 73–76.3 indexed citations
Toyoshima, Y., F. Matsuoka, H. Hayashida, Hiroshi Iwai, & K. Kanzaki. (1988). Study on gate oxide thickness dependence of hot carrier induced degradation for n-MOSFETs.. Symposium on VLSI Technology. 39–40.8 indexed citations
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive
bibliographic database. While OpenAlex provides broad and valuable coverage of the global
research landscape, it—like all bibliographic datasets—has inherent limitations. These include
incomplete records, variations in author disambiguation, differences in journal indexing, and
delays in data updates. As a result, some metrics and network relationships displayed in
Rankless may not fully capture the entirety of a scholar's output or impact.