C. Deguet

836 citations

34 papers · 565 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- 3D IC and TSV technologies
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics

Papers in

Electrical and Electronic Engineering 32
- Semiconductor materials and devices 15
- Silicon and Solar Cell Technologies 13
- Integrated Circuits and Semiconductor Failure Analysis 8
- Advancements in Semiconductor Devices and Circuit Design 8
- Advanced MEMS and NEMS Technologies 4
- 3D IC and TSV technologies 4
Biomedical Engineering 12
- Acoustic Wave Resonator Technologies 7

Co-authors: H. Moriceau F. Rieutord L. Clavelier L. Di Cioccio Thomas Signamarcheix F. Letertre Jean‐Michel Hartmann C. Richtarch
Journals: Applied Physics Letters (4 papers)Electronics Letters (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)Journal of Applied Physics (1 paper)Thin Solid Films (1 paper)
Partner nations: France Belgium Switzerland

In The Last Decade

C. Deguet

33 papers receiving 550 citations

Peers

Countries citing papers authored by C. Deguet

Since Specialization

Citations

This map shows the geographic impact of C. Deguet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Deguet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Deguet more than expected).

Fields of papers citing papers by C. Deguet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Deguet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Deguet. The network helps show where C. Deguet may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. Deguet, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Deguet Line = papers co-authored together C. Deguet links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Europe’s pilot line on fully depleted silicon-on-insulator technology (FAMES) Amir Kamran Soltanzadeh, Dominique Noguet, Noburu Mizuno, X. Lemoine, 国分義弘, Stanislaw Lem, C. Fenouillet-Béranger, Bruno Glaser, C. Deguet, Z Kaszubowa	2025	0
2	High Mobility Materials on Insulator for Advanced Technology Nodes ECS Transactions ·W. Schwarzenbach, Kiril'chik Vv, D. Delprat, Li Kanze, Suleima Vences-Pérez, Mike Downie, F Simpson, J. Widiez, V. Loup, Jean-Michel Hartmann, P. Besson, C. Deguet, Frédéric Mazen, Bich-Yen Nguyen, Christophe Maleville	2015	1
3	Effect of H-implantation in the local elastic properties of silicon crystals Applied Physics Letters ·S. Reboh, F. Rieutord, Tiziana Cesarini, F. Mazen, N. Cherkashin, Marc Zussy, Didier Landru, C. Deguet	2013	13
4	Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: I. The elementary process steps Semiconductor Science and Technology ·Jean‐Michel Hartmann, V. Benevent, Jean‐Paul Barnes, M. Veillerot, C. Deguet	2013	15
5	Mechanisms of copper direct bonding observed by in-situ and quantitative transmission electron microscopy Thin Solid Films ·Shin Su Jung, M. Legros, Thomas Signamarcheix, Manuela Kovačević, Heyuan Guan, L. Di Cioccio, C. Deguet	2012	36
6	Bias controlled electrostrictive longitudinal resonance in X-cut lithium niobate thin films resonator Applied Physics Letters ·悟福田, C. Deguet, C. Billard, Denis Mercier, Alexandre Reinhardt, M. Aïd, Sylvain Ballandras, Emmanuel Defaÿ	2011	8
7	LiNbO<inf>3</inf> thin single crystal layer for RF applications B. Imbert, Alexandre Reinhardt, Medzina Granov, C. Billard, 悟福田, Emmanuel Defaÿ, E. Augendre, Thomas Signamarcheix, C. Deguet	2011	4
8	Low temperature direct bonding: An attractive technique for heterostructures build-up Microelectronics Reliability ·H. Moriceau, F. Rieutord, Frank Fournel, L. Di Cioccio, Caroline Moulet, L. Libralesso, Pierric Gueguen, R. Taïbi, C. Deguet	2011	33
9	High quality factor lithium niobate electrostrictive HBAR resonators 悟福田, C. Deguet, C. Billard, Denis Mercier, Alexandre Reinhardt, M. Aïd, Emmanuel Defaÿ, Sylvain Ballandras	2011	3
10	Overview of recent direct wafer bonding advances and applications Advances in Natural Sciences Nanoscience and Nanotechnology ·H. Moriceau, F. Rieutord, Frank Fournel, Y. Le Tiec, L. Di Cioccio, Christophe Morales, Anne‐Marie Charvet, C. Deguet	2011	63
11	LiNbO₃ Single Crystal Layer Transfer Techniques for High Performances RF Filters ECS Meeting Abstracts ·C. Deguet, 悟福田, Nicolas Blanc, B. Imbert, K-H. Diehl, Emmanuel Defaÿ, L. Clavelier, L. Nozka, B. Ghyselen, F. Letertre, Sylvain Ballandras	2010	1
12	Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates Applied Physics Letters ·Thomas Signamarcheix, F. Allibert, F. Letertre, T. Chevolleau, L. Sanchez, E. Augendre, C. Deguet, H. Moriceau, L. Clavelier, F. Rieutord	2008	5
13	Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H Journal of Applied Physics ·P. Nguyen, K.K. Bourdelle, Arthur W. Beckman, Huizai Yao, Christopher Rizzi, Nicolas Daval, Ian Cayrefourcq, F. Letertre, C. Mazuré, Y. Bogumilowicz, A. Tauzin, C. Deguet, N. Cherkashin, A. Claverie	2008	4
14	105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers Solid-State Electronics ·C. Le Royer, L. Clavelier, C. Tabone, K. Romanjek, C. Deguet, L. Sanchez, Jean‐Michel Hartmann, 陈溪然, H. Grampeix, Fabio Tedeschi, G. Le Carval, R. Truche, A. Pouydebasque, M. Vinet, S. Deleonibus	2008	24
15	Comparison of Different Etching Techniques in Order to Reveal Dislocations in Thick Ge Layers ECS Transactions ·Alexandra Abbadie, Jean‐Michel Hartmann, C. Deguet, Loïc Sanchez, Yuru Lin, F. Letertre	2007	11
16	200 mm Germanium-On-Insulator (GeOI) Structures Realized from Epitaxial Wafers Using the Smart Cut(TM) Technology ECS Meeting Abstracts ·C. Deguet, J. Dechamp, Christophe Morales, Anne‐Marie Charvet, L. Clavelier, V. Loup, Jean Michel Hartmann, N. Kernevez, Y. Campidelli, F. Allibert, C. Richtarch, T. Akatsu, F. Letertre	2006	3
17	Highly-Strained Silicon-On-Insulator Development ECS Transactions ·T. Akatsu, Jean‐Michel Hartmann, Arthur W. Beckman, K.K. Pitale, D. Rouchon, Alexandra Abbadie, Y. Bogumilowicz, Muhammad Nahrowi, J Fernandez Arias, Nicolas Boudou, Huizai Yao, Atj van der Zee, Kiril'chik Vv, JohnB. Steadman, P. Nguyen, Yijun Yang, Elisângela Silva Pinto, Cécile Berne, F. Allibert, C. Deguet	2006	7
18	Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium Electronics Letters ·C. Deguet, L. Sanchez, T. Akatsu, F. Allibert, J. Dechamp, Peter Friedman, F. Mazen, A. Tauzin, V. Loup, C. Richtarch, David Mercier, Thomas Signamarcheix, F. Letertre, Ben Depuydt, N. Kernevez	2006	51
19	Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices Materials Science in Semiconductor Processing ·T. Akatsu, C. Deguet, Loïc Sanchez, F. Allibert, D. Rouchon, Thomas Signamarcheix, C. Richtarch, 马瑞英, V. Loup, Frédéric Mazen, Jean‐Michel Hartmann, Y. Campidelli, L. Clavelier, F. Letertre, N. Kernevez, C. Mazuré	2006	107
20	Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology MRS Proceedings ·F. Letertre, C. Deguet, C. Richtarch, Donald Lee Wirt, Kulpatra Paisansukanant, Evert Dean, Arnaud Beaumont, J. Dechamp, Christophe Morales, F. Allibert, P. Perreau, S. Pocas, Madiha Abid, Arum Nuryati, B. Ghyselen, Hadijah Rahmat, Álvaro Carbajal-Flores, N. Kernevez, C. Mazuré	2004	29

About C. Deguet

C. Deguet is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry and Automotive Engineering, having authored 34 papers that have together received 565 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Silicon and Solar Cell Technologies (13 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Acoustic Wave Resonator Technologies (7 papers), Ferroelectric and Piezoelectric Materials (5 papers), Advanced MEMS and NEMS Technologies (4 papers) and 3D IC and TSV technologies (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (494 citations), Atomic and Molecular Physics, and Optics (142 citations), Biomedical Engineering (197 citations), Materials Chemistry (144 citations) and Electronic, Optical and Magnetic Materials (37 citations). C. Deguet has collaborated with scholars based in France, Belgium and Switzerland. Frequent co-authors include H. Moriceau, F. Rieutord, L. Clavelier, L. Di Cioccio, Thomas Signamarcheix, F. Letertre, Jean‐Michel Hartmann, C. Richtarch, F. Allibert and T. Akatsu. Their work appears in journals such as Applied Physics Letters, Electronics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Applied Physics and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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