C. Jahan

1.5k total citations
41 papers, 728 citations indexed

About

C. Jahan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, C. Jahan has authored 41 papers receiving a total of 728 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 6 papers in Polymers and Plastics. Recurrent topics in C. Jahan's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Phase-change materials and chalcogenides (13 papers). C. Jahan is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Phase-change materials and chalcogenides (13 papers). C. Jahan collaborates with scholars based in France, Italy and United States. C. Jahan's co-authors include L. Tosti, Marc Gaillardin, Philippe Paillet, O. Faynot, Jean‐Michel Hartmann, O. Faynot, V. Ferlet-Cavrois, Véronique Ferlet-Cavrois, J. Baggio and S. Cristoloveanu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Non-Crystalline Solids.

In The Last Decade

C. Jahan

40 papers receiving 696 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Jahan France 14 687 151 84 49 43 41 728
Y.N. Hwang South Korea 10 380 0.6× 288 1.9× 39 0.5× 34 0.7× 27 0.6× 21 473
C.-Y. Lu Taiwan 15 679 1.0× 109 0.7× 23 0.3× 127 2.6× 58 1.3× 60 707
F. Arnaud France 14 801 1.2× 131 0.9× 34 0.4× 111 2.3× 101 2.3× 63 838
Akio Shima Japan 15 715 1.0× 103 0.7× 9 0.1× 109 2.2× 39 0.9× 92 763
M. Denais France 14 1.4k 2.0× 148 1.0× 40 0.5× 70 1.4× 30 0.7× 37 1.4k
G. Pollack United States 16 775 1.1× 254 1.7× 23 0.3× 90 1.8× 62 1.4× 49 908
Bich-Yen Nguyen France 19 1.3k 1.9× 355 2.4× 24 0.3× 96 2.0× 123 2.9× 119 1.4k
J.-L. Ogier France 7 720 1.0× 171 1.1× 22 0.3× 54 1.1× 24 0.6× 29 749
R.‐P. Vollertsen Germany 15 804 1.2× 117 0.8× 52 0.6× 32 0.7× 20 0.5× 52 839
R. Bellens Belgium 13 1.6k 2.3× 243 1.6× 32 0.4× 75 1.5× 36 0.8× 40 1.6k

Countries citing papers authored by C. Jahan

Since Specialization
Citations

This map shows the geographic impact of C. Jahan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Jahan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Jahan more than expected).

Fields of papers citing papers by C. Jahan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Jahan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Jahan. The network helps show where C. Jahan may publish in the future.

Co-authorship network of co-authors of C. Jahan

This figure shows the co-authorship network connecting the top 25 collaborators of C. Jahan. A scholar is included among the top collaborators of C. Jahan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Jahan. C. Jahan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jahan, C., et al.. (2024). A synergistic fault tolerance framework for Mbit 28nm embedded RRAM. SPIRE - Sciences Po Institutional REpository. 1–7.
2.
3.
Navarro, G., A. Persico, F. Aussenac, et al.. (2013). Electrical performances of SiO<inf>2</inf>-doped GeTe for phase-change memory applications. MY.9.1–MY.9.5. 8 indexed citations
4.
Cueto, O., C. Jahan, V. Sousa, et al.. (2010). Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells. Microelectronic Engineering. 88(5). 827–832. 6 indexed citations
5.
Nowak, E., et al.. (2008). On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories. 61–63. 2 indexed citations
6.
Ritzenthaler, R., Marc Gaillardin, Kerem Akarvardar, et al.. (2007). Modelling the Back-Gate Coupling effect in Triple-, Π- and Ω-Gate FETs. ECS Transactions. 6(4). 89–94. 2 indexed citations
7.
Perniola, L., E. Nowak, Giuseppe Iannaccone, et al.. (2007). Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memories. CINECA IRIS Institutial research information system (University of Pisa). 943–946. 1 indexed citations
8.
Gaillardin, Marc, Philippe Paillet, J. Baggio, et al.. (2007). Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors. IEEE Transactions on Nuclear Science. 54(6). 2355–2362. 27 indexed citations
9.
10.
Ritzenthaler, R., C. Dupré, Xavier Mescot, et al.. (2006). Mobility behavior in narrow &#x003A9;-gateFETs devices. 77–78. 4 indexed citations
11.
Gaillardin, Marc, Philippe Paillet, Véronique Ferlet-Cavrois, et al.. (2006). High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors. Applied Physics Letters. 88(22). 48 indexed citations
12.
Munteanu, Daniela, V. Ferlet-Cavrois, Philippe Paillet, et al.. (2006). Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation. IEEE Transactions on Nuclear Science. 53(6). 3363–3371. 31 indexed citations
13.
Jahan, C., O. Faynot, L. Tosti, & Jean‐Michel Hartmann. (2005). Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates. Journal of Crystal Growth. 280(3-4). 530–538. 63 indexed citations
14.
Gaillardin, Marc, Véronique Ferlet-Cavrois, A. Torres, et al.. (2005). Total ionizing dose effects on deca-nanometer fully depleted SOI devices. IEEE Transactions on Nuclear Science. 52(6). 2345–2352. 70 indexed citations
15.
Jahan, C., O. Faynot, M. Cassé, et al.. (2005). ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm. 112–113. 18 indexed citations
16.
Hartmann, Jean‐Michel, L. Clavelier, C. Jahan, et al.. (2004). Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains. Journal of Crystal Growth. 264(1-3). 36–47. 57 indexed citations
17.
Fenouillet-Béranger, C., et al.. (2001). Characterization and simulation of STI isolation for 0.1 /spl mu/m partially-depleted SOI devices. 87–88. 1 indexed citations
18.
Jahan, C., S. Bruyère, G. Ghibaudo, Emmanuel Vincent, & K. Barla. (1999). Model for the oxide thickness dependence of SILC generation based on anode hole injection process. Microelectronics Reliability. 39(6-7). 791–795. 7 indexed citations
19.
Jahan, C. & K. Barla. (1999). Effect of boron penetration on the stress induced leakage current in PMOS structures with p+ doped polysilicon gate. Journal of Non-Crystalline Solids. 245(1-3). 33–40. 7 indexed citations
20.
Ghibaudo, G., S. Bruyère, B. DeSalvo, et al.. (1999). Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB). Microelectronic Engineering. 49(1-2). 41–50. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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