X. Wallart

3.6k citations

162 papers · 2.8k indexed · h-index 27

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 88
- Quantum and electron transport phenomena 16
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 59
- Advancements in Semiconductor Devices and Circuit Design 43
- Advanced Semiconductor Detectors and Materials 38
- Radio Frequency Integrated Circuit Design 19
Materials Chemistry top 5%
- Graphene research and applications 15
Biomedical Engineering top 5%
- Nanowire Synthesis and Applications 26
Structural Biology top 10%

Co-authors: F. Mollot D. Vignaud L. Desplanque Catherine Henry de Villeneuve P. Allongue Olivier Dehaese Philippe Caroff S. Godey
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Applied Physics Letters (21 papers)Journal of Applied Physics (16 papers)Nanotechnology (11 papers)
Partner nations: France Germany Belgium

In The Last Decade

X. Wallart

155 papers receiving 2.8k citations

Peers

Countries citing papers authored by X. Wallart

Since Specialization

Citations

This map shows the geographic impact of X. Wallart's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Wallart with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Wallart more than expected).

Fields of papers citing papers by X. Wallart

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Wallart. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Wallart. The network helps show where X. Wallart may publish in the future.

Co-authorship network

The 25 scholars most cited alongside X. Wallart, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with X. Wallart Line = papers co-authored together X. Wallart links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Selective area molecular beam epitaxy of InSb on InP(111) _B : from thin films to quantum nanostructures Nanotechnology ·Mathia Adinda,Pierre Capiod,仁志宮沢,Christophe Coinon,В. В. Крусь,Davaei Manouchehr,Melissa Range,Maxime Berthe,Pierre‐Henri Jouneau,Sergiu Amarie,充道花野,X. Wallart,P. Ballet,B. Grandidier,L. Desplanque	2025	1
2	Stacking order and electronic band structure in MBE-grown trilayer WSe2 films Physical review. B. ·Sakiko Kosugi,燕姫李,Nur Aimi Jani,Fabrice Oehler,Pavel Dudin,Jonathan Randolph Brown,G. Patriarche,Julien Chaste,Fausto Sirotti,X. Wallart,J. Ávila,Abdelkarim Ouerghi	2024	3
3	Van der Waals epitaxial growth of few layers WSe₂ on GaP(111)_B 2D Materials ·Nur Aimi Jani,Sakiko Kosugi,Christophe Coinon,Marten Tamo Ama,D. Vignaud,G. Patriarche,Pascal Roussel,Abdelkarim Ouerghi,Fabrice Oehler,X. Wallart	2024	2
4	Vertical and lateral manipulation of single Cs atoms on the semiconductor InAs(111)A SciPost Physics ·Montse Rabella Vidal,Ma Ma Yitong,L. Desplanque,X. Wallart,Ingmar Swart	2024	2
5	Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe₂ on GaP(111) Heterostructure ACS Nano ·Sakiko Kosugi,燕姫李,Nur Aimi Jani,Anthony H. Green,Julien Chaste,Jonathan Randolph Brown,Marco Pala,F. Bertran,Patrick Le Fèvre,Iann C. Gerber,G. Patriarche,Fabrice Oehler,X. Wallart,Abdelkarim Ouerghi	2023	10
6	Two dimensional boron nitride growth on nickel foils by plasma assisted molecular beam epitaxy from elemental B and N sources Nanotechnology ·Laís Regina dos Santos Folquitto,X. Wallart,D. Vignaud	2023	2
7	High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers Journal of Electronic Materials ·Sebastián Antonio Gutiérrez-Romero,Éric Frayssinet,Владимир Викторович Еременко,Plesent W. Goode,Priyanka Mondal,J. Treuttel,X. Wallart,Malek Zegaoui,G. Ducournau,Yannick Roelens,Y. Cordier,M. Zaknoune	2023	2
8	Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy Applied Physics Letters ·Bradley B. Rounds,Corentin Durand,Maxime Berthe,Yan Lu,Mao Jiang Gao,R. Coratger,I. Lefebvre,Ph. Ebert,Louis Biadala,L. Desplanque,X. Wallart,张良彬	2022	2
9	Revisiting Coulomb diamond signatures in quantum Hall interferometers Physical review. B. ·Nicolas Moreau,Sébastien Faniel,Frederico Martins,L. Desplanque,X. Wallart,Sorin Melinte,V. Bayot,B. Hackens	2022	1
10	Engineering a Robust Flat Band in III–V Semiconductor Heterostructures Nano Letters ·Liza Greenberg,K Kagei,N.M. Wang,Maxime Berthe,F. Vaurette,Yannick Lambert,Dmitri Yarekha,David Troadec,Christophe Coinon,Guillaume Fleury,G. Patriarche,Tao Xu,L. Desplanque,X. Wallart,Daniël Vanmaekelbergh,Christophe Delerue,B. Grandidier	2020	21
11	Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors Nanotechnology ·K Kagei,Tao Xu,Liza Greenberg,Palomino Carrión,Yannick Lambert,F. Vaurette,Dmitri Yarekha,L. Desplanque,D. Stiévenard,X. Wallart,B. Grandidier,Christophe Delerue,Daniël Vanmaekelbergh	2019	9
12	Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy Nanotechnology ·Д.В. Черданцев,A. Olivier,Fernando Cenci Guimaräes,Mabel Stevenson,T.A. Karatsori,陈德银,A. Sauvrezis,Ahmed Addad,David Troadec,G. Ghibaudo,L. Desplanque,X. Wallart,Blanka Soukupová	2018	5
13	Synthesis of T-Nb2O5 thin-films deposited by Atomic Layer Deposition for miniaturized electrochemical energy storage devices Energy storage materials ·D. G. Kabakov,Marisol Macheta Rico,Florent Blanchard,Jean-Louis Codron,X. Wallart,Pierre‐Louis Taberna,Pascal Roussel,Laurent Clavier,Patrice Simon,Christophe Lethien	2018	51
14	Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction Scientific Reports ·Ivy Razado-Colambo,J. Ávila,D. Vignaud,S. Godey,X. Wallart,D.P. Woodruff,M. C. Asensio	2018	36
15	In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate Nanotechnology ·L. Desplanque,A. Sauvrezis,D. Troadec,G. Patriarche,X. Wallart	2018	24
16	Influence of Doping and Tunneling Interface Stoichiometry on n+In_0.5Ga_0.5As/p+GaAs_0.5Sb_0.5 Esaki Diode Behavior ECS Transactions ·Salim El Kazzi,Yonas Gebrekiros,F.L.D. Wooltorton,Quentin Smets,L. Desplanque,X. Wallart,Olivier Richard,Bastien Douhard,Anne S. Verhulst,Nadine Collaert,Clément Merckling,Marc Heyns,Aaron Thean	2016	2
17	Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor Journal of Nanoscience and Nanotechnology ·Elin Sjövall,Jérôme Saint-Martin,Arnaud Bournel,Damien Querlioz,Philippe Dollfus,Vicky Jones,Mabel Stevenson,L. Desplanque,X. Wallart,F. Danneville,S. Bollaert	2013	1
18	Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy Journal of Physics Condensed Matter ·陈庆忠,P. Rutérana,Jun Chen,L. Desplanque,Salim El Kazzi,X. Wallart	2012	3
19	High frequency performance of Tellurium σ-doped AlSb/InAs HEMTs at low power supply A. Olivier,Braumann Ulf‐Dietrich,Mabel Stevenson,Yannick Roelens,L. Desplanque,F. Danneville,G. Dambrine,X. Wallart,S. Bollaert	2010	1
20	Imaging Coulomb islands in a quantum Hall interferometer Nature Communications ·B. Hackens,Frederico Martins,Cahit Yeşilyaprak,V F Nascimento Filho,H. Sellier,S. Huant,Marco Pala,L. Desplanque,X. Wallart,Vincent Bayot	2010	43

About X. Wallart

X. Wallart is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films, having authored 162 papers that have together received 2.8k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (88 papers), Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (43 papers), Advanced Semiconductor Detectors and Materials (38 papers), Nanowire Synthesis and Applications (26 papers), Radio Frequency Integrated Circuit Design (19 papers), Quantum and electron transport phenomena (16 papers) and Graphene research and applications (15 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.4k citations), Electrical and Electronic Engineering (2.0k citations) and Materials Chemistry (1.1k citations). X. Wallart has collaborated with scholars based in France, Germany and Belgium. Frequent co-authors include F. Mollot, D. Vignaud, L. Desplanque, Catherine Henry de Villeneuve, P. Allongue, Olivier Dehaese, Philippe Caroff, S. Godey, Sébastien Plissard and J. Ávila. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Nanotechnology, Journal of Crystal Growth and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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