J. Demeulemeester

713 citations

34 papers · 594 indexed · h-index 13

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
Metals and Alloys top 10%

Papers in

Metals and Alloys 2
Atomic and Molecular Physics, and Optics 23
- Semiconductor materials and interfaces 19
- Surface and Thin Film Phenomena 6

Co-authors: A. Vantomme K. Temst C.M. Comrie Christophe Detavernier Wilfried Vandervorst Roger Loo Benjamin Vincent D. Smeets
Journals: Journal of Applied Physics (9 papers)Microelectronic Engineering (3 papers)Journal of Physics D Applied Physics (3 papers)Ultramicroscopy (2 papers)Applied Physics Letters (2 papers)
Partner nations: Belgium South Africa Japan

In The Last Decade

J. Demeulemeester

34 papers receiving 587 citations

Peers

Countries citing papers authored by J. Demeulemeester

Since Specialization

Citations

This map shows the geographic impact of J. Demeulemeester's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Demeulemeester with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Demeulemeester more than expected).

Fields of papers citing papers by J. Demeulemeester

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Demeulemeester. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Demeulemeester. The network helps show where J. Demeulemeester may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Demeulemeester, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Demeulemeester Line = papers co-authored together J. Demeulemeester links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Ion beam modification of the Ni-Si solid-phase reaction: The influence of substrate damage and nitrogen impurities introduced by ion implantation Journal of Physics D Applied Physics ·Joelma Batista dos Santos Ribeiro, Muraleedharan Kallungal Ravunnikutty, Nuno M. Santos, 蔡恩泽, V. L. Joseph Joly, J. Demeulemeester, Cristian Mocuta, C.M. Comrie, Christophe Detavernier, L. M. C. Pereira, K. Temst, A. Vantomme	2020	11
2	Impurity-enhanced solid-state amorphization: the Ni–Si thin film reaction altered by nitrogen Journal of Physics D Applied Physics ·Joelma Batista dos Santos Ribeiro, Muraleedharan Kallungal Ravunnikutty, Nuno M. Santos, 蔡恩泽, V. L. Joseph Joly, J. Demeulemeester, Christophe Detavernier, Felipe Kremer, L. M. C. Pereira, K. Temst, A. Vantomme	2019	12
3	Measurement of the apex temperature of a nanoscale semiconducting field emitter illuminated by a femtosecond pulsed laser Journal of Applied Physics ·Carla van Slagmaat, Janusz Bogdanowicz, J. Demeulemeester, Chris Roberts, 汪勇, Claudia Fleischmann, Wilfried Vandervorst	2018	6
4	Atom probe tomography analysis of SiGe fins embedded in SiO 2 : Facts and artefacts Ultramicroscopy ·汪勇, Claudia Fleischmann, R. Janulis, J. Demeulemeester, Carla van Slagmaat, Janusz Bogdanowicz, F. Vurpillot, Wilfried Vandervorst	2017	22
5	Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): Nucleation and solid solubility of the monosilicides Acta Materialia ·Reginald Wills, J. Demeulemeester, Phillip E. Mikesell, Wouter Devulder, C. Detavernier, C.M. Comrie, K. Temst, A. Vantomme	2017	10
6	Mapping interfacial excess in atom probe data Ultramicroscopy ·Peter Felfer, Barbara Scherrer, J. Demeulemeester, Wilfried Vandervorst, Julie M. Cairney	2015	35
7	Quantification of group IV alloys in confined structures: the self focusing SIMS approach Alexis Franquet, Bastien Douhard, 汪勇, E. Lagarón Comba, J. Demeulemeester, Thierry Conard, Wilfried Vandervorst	2014	1
8	On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films Journal of Alloys and Compounds ·Muraleedharan Kallungal Ravunnikutty, W. Knaepen, J. Demeulemeester, K. De Keyser, Jean Jordan‐Sweet, C. Lavoie, A. Vantomme, Christophe Detavernier	2014	6
9	On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction Journal of Applied Physics ·Reginald Wills, J. Demeulemeester, Mudra Doshi, Wilfried Vandervorst, C.M. Comrie, C. Detavernier, K. Temst, A. Vantomme	2013	6
10	Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn ECS Journal of Solid State Science and Technology ·Federica Gencarelli, Benjamin Vincent, J. Demeulemeester, A. Vantomme, Alain Moussa, Alexis Franquet, P Mountford, H. Bender, Johan Meersschaut, Wilfried Vandervorst, Roger Loo, Matty Caymax, K. Temst, Marc Heyns	2013	106
11	Determination of the dominant diffusing species during nickel and palladium germanide formation Thin Solid Films ·C.M. Comrie, D. Smeets, Bernd Büchner, Haoyu Du, J. Demeulemeester, W. Knaepen, Christophe Detavernier, H. Adrian, A. Vantomme	2012	15
12	Paramagnetism and antiferromagnetic interactions in Cr-doped GaN Journal of Physics Condensed Matter ·L. M. C. Pereira, T. Som, J. Demeulemeester, M. J. Van Bael, K. Temst, A. Vantomme	2011	9
13	GeSn Technology: Impact of Sn on Ge CMOS Applications ECS Meeting Abstracts ·Shigeaki Zaima, Osamu Nakatsuka, Yosuke Shimura, Shotaro Takeuchi, Benjamin Vincent, Federica Gencarelli, Phúc Nguyễn, J. Demeulemeester, K. Temst, A. Vantomme, Matty Caymax, Roger Loo	2011	1
14	The influence of Pt redistribution on Ni1−xPtxSi growth properties Journal of Applied Physics ·J. Demeulemeester, D. Smeets, C.M. Comrie, Alex Popov, W. Knaepen, Christophe Detavernier, K. Temst, A. Vantomme	2010	28
15	Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Microelectronic Engineering ·Benjamin Vincent, Yosuke Shimura, Shotaro Takeuchi, Takashi Nishimura, Geert Eneman, Andrea Firrincieli, J. Demeulemeester, A. Vantomme, Trudo Clarysse, Osamu Nakatsuka, Shigeaki Zaima, J. Dekoster, Matty Caymax, Roger Loo	2010	91
16	(Invited) Assessment of Ge_1-xSn_x Alloys for Strained Ge CMOS Devices ECS Transactions ·Shotaro Takeuchi, Yosuke Shimura, Takashi Nishimura, Benjamin Vincent, Geert Eneman, Trudo Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, Matty Caymax, Roger Loo, Osamu Nakatsuka, Atsushi Sakai, Shigeaki Zaima	2010	10
17	Artificial neural networks for instantaneous analysis of real-time Rutherford backscattering spectra Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J. Demeulemeester, D. Smeets, N.P. Barradas, Armando Vieira, C.M. Comrie, K. Temst, A. Vantomme	2010	29
18	Artificial neural networks applied to the analysis of synchrotron nuclear resonant scattering data Journal of Synchrotron Radiation ·刘英莉, J. Demeulemeester, Jing Yan Liu, D. Smeets, Johan Meersschaut, C. L’abbé, K. Temst, A. Vantomme	2009	8
19	Pt redistribution during Ni(Pt) silicide formation Applied Physics Letters ·J. Demeulemeester, D. Smeets, Alex Popov, Christophe Detavernier, C.M. Comrie, N.P. Barradas, Armando Vieira, A. Vantomme	2008	46
20	Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time Journal of Applied Physics ·D. Smeets, J. Demeulemeester, K. De Keyser, Davy Deduytsche, Christophe Detavernier, C.M. Comrie, C.C. Theron, C. Lavoie, A. Vantomme	2008	12

About J. Demeulemeester

J. Demeulemeester is a scholar working on Metals and Alloys, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Biomedical Engineering and Condensed Matter Physics, having authored 34 papers that have together received 594 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (19 papers), Photonic and Optical Devices (8 papers), Semiconductor materials and devices (8 papers), Silicon and Solar Cell Technologies (7 papers), Advanced Materials Characterization Techniques (6 papers), Surface and Thin Film Phenomena (6 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Nanowire Synthesis and Applications (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (331 citations), Metals and Alloys (25 citations), Electrical and Electronic Engineering (425 citations), Biomedical Engineering (206 citations) and Radiation (34 citations). J. Demeulemeester has collaborated with scholars based in Belgium, South Africa and Japan. Frequent co-authors include A. Vantomme, K. Temst, C.M. Comrie, Christophe Detavernier, Wilfried Vandervorst, Roger Loo, Benjamin Vincent, D. Smeets, Matty Caymax and Yosuke Shimura. Their work appears in journals such as Journal of Applied Physics, Microelectronic Engineering, Journal of Physics D Applied Physics, Ultramicroscopy and Applied Physics Letters.

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