L. Desplanque

1.4k total citations
87 papers, 1.0k citations indexed

About

L. Desplanque is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, L. Desplanque has authored 87 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 81 papers in Electrical and Electronic Engineering, 68 papers in Atomic and Molecular Physics, and Optics and 20 papers in Biomedical Engineering. Recurrent topics in L. Desplanque's work include Semiconductor Quantum Structures and Devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Advanced Semiconductor Detectors and Materials (27 papers). L. Desplanque is often cited by papers focused on Semiconductor Quantum Structures and Devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Advanced Semiconductor Detectors and Materials (27 papers). L. Desplanque collaborates with scholars based in France, Sweden and Belgium. L. Desplanque's co-authors include X. Wallart, P. Ruterana, Jan Grahn, Salim El Kazzi, F. Mollot, D. Troadec, G. Patriarche, H. Sellier, Marco Pala and Frederico Martins and has published in prestigious journals such as Physical Review Letters, Nature Communications and The Journal of Chemical Physics.

In The Last Decade

L. Desplanque

85 papers receiving 974 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Desplanque France 20 779 672 220 213 72 87 1.0k
Stéphane Boubanga Tombet Japan 15 562 0.7× 376 0.6× 322 1.5× 166 0.8× 178 2.5× 44 796
Franko Küppers Germany 19 837 1.1× 392 0.6× 159 0.7× 71 0.3× 47 0.7× 127 1.0k
Dmitry Svintsov Russia 17 364 0.5× 420 0.6× 357 1.6× 268 1.3× 66 0.9× 62 754
Bijan Ghafary Iran 15 461 0.6× 447 0.7× 138 0.6× 79 0.4× 32 0.4× 63 630
S. G. Matsik United States 16 690 0.9× 594 0.9× 153 0.7× 185 0.9× 98 1.4× 64 861
Jan Grahn Sweden 19 1.0k 1.3× 536 0.8× 112 0.5× 168 0.8× 189 2.6× 110 1.2k
D. V. Fateev Russia 16 540 0.7× 435 0.6× 427 1.9× 87 0.4× 157 2.2× 52 805
A. Hülsmann Germany 18 986 1.3× 391 0.6× 172 0.8× 37 0.2× 68 0.9× 123 1.1k
H. D. Shih United States 15 817 1.0× 579 0.9× 93 0.4× 226 1.1× 25 0.3× 85 996
J. Rosenzweig Germany 20 1.1k 1.4× 764 1.1× 120 0.5× 91 0.4× 21 0.3× 103 1.2k

Countries citing papers authored by L. Desplanque

Since Specialization
Citations

This map shows the geographic impact of L. Desplanque's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Desplanque with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Desplanque more than expected).

Fields of papers citing papers by L. Desplanque

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Desplanque. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Desplanque. The network helps show where L. Desplanque may publish in the future.

Co-authorship network of co-authors of L. Desplanque

This figure shows the co-authorship network connecting the top 25 collaborators of L. Desplanque. A scholar is included among the top collaborators of L. Desplanque based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Desplanque. L. Desplanque is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Capiod, Pierre, Christophe Coinon, Maxime Berthe, et al.. (2025). Selective area molecular beam epitaxy of InSb on InP(111) B : from thin films to quantum nanostructures. Nanotechnology. 36(12). 125301–125301. 1 indexed citations
2.
Jouneau, Pierre‐Henri, Erwan Gautier, Jean‐Luc Rouvière, et al.. (2024). Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate. Nanotechnology. 35(50). 505602–505602. 1 indexed citations
3.
Coinon, Christophe, Pascal Tilmant, F. Vaurette, et al.. (2024). InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy. Nanotechnology. 35(39). 395302–395302.
4.
Coinon, Christophe, Maxime Berthe, D. Troadec, et al.. (2023). Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell. Nanotechnology. 34(26). 265704–265704. 3 indexed citations
5.
Berthe, Maxime, Sébastien Legendre, Christophe Coinon, et al.. (2023). Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces. Review of Scientific Instruments. 94(12). 1 indexed citations
6.
Moreau, Nicolas, Sébastien Faniel, Frederico Martins, et al.. (2022). Revisiting Coulomb diamond signatures in quantum Hall interferometers. Physical review. B.. 105(11). 1 indexed citations
7.
Durand, Corentin, Maxime Berthe, Yan Lu, et al.. (2022). Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy. Applied Physics Letters. 121(19). 2 indexed citations
8.
Berthe, Maxime, F. Vaurette, Yannick Lambert, et al.. (2020). Engineering a Robust Flat Band in III–V Semiconductor Heterostructures. Nano Letters. 21(1). 680–685. 21 indexed citations
9.
Xu, Tao, Yannick Lambert, F. Vaurette, et al.. (2019). Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors. Nanotechnology. 30(15). 155301–155301. 9 indexed citations
10.
Desplanque, L., et al.. (2019). Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates. Journal of Crystal Growth. 512. 6–10. 16 indexed citations
11.
Mohr, Marcel, Christophe Coinon, Maxime Berthe, et al.. (2019). Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on p-type doped InP(001). Physical Review Materials. 3(9). 6 indexed citations
12.
Olivier, A., T.A. Karatsori, Ahmed Addad, et al.. (2018). Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy. Nanotechnology. 30(3). 35301–35301. 5 indexed citations
13.
Kazzi, Salim El, Quentin Smets, L. Desplanque, et al.. (2016). Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. ECS Transactions. 72(3). 73–80. 2 indexed citations
14.
Martins, Frederico, B. Hackens, L. Desplanque, et al.. (2015). Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy. Physical Review B. 91(7). 4 indexed citations
15.
Desplanque, L., et al.. (2015). Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy. Nanotechnology. 26(29). 295301–295301. 12 indexed citations
16.
Roelens, Yannick, et al.. (2012). Lattice matched and Pseudomorphic InGaAs MOSHEMT with f<inf>T</inf> of 200GHz. HAL (Le Centre pour la Communication Scientifique Directe). 44–47. 1 indexed citations
17.
Rutérana, P., et al.. (2012). Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy. Journal of Physics Condensed Matter. 24(33). 335802–335802. 3 indexed citations
18.
Olivier, A., Yannick Roelens, L. Desplanque, et al.. (2010). High frequency performance of Tellurium σ-doped AlSb/InAs HEMTs at low power supply. 162–165. 1 indexed citations
19.
Lampin, Jean‐François, L. Desplanque, & F. Mollot. (2008). Electro-absorption sampling at terahertz frequencies in III-V semiconductors. Comptes Rendus Physique. 9(2). 153–160. 2 indexed citations
20.
Desplanque, L., et al.. (2003). Shock wave coupling between terahertz transmission lines on GaAs. Applied Physics Letters. 83(12). 2483–2485. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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