N. Loubet

2.1k total citations
15 papers, 249 citations indexed

About

N. Loubet is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Loubet has authored 15 papers receiving a total of 249 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Loubet's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Nanowire Synthesis and Applications (4 papers). N. Loubet is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Nanowire Synthesis and Applications (4 papers). N. Loubet collaborates with scholars based in United States, France and Switzerland. N. Loubet's co-authors include Shinichi Mochizuki, T. Yamashita, Stephen W. Bedell, D. K. Sadana, Gen Tsutsui, J. Li, Veeraraghavan Basker, E. Augendre, Michael Guillorn and T. Standaert and has published in prestigious journals such as Applied Physics Letters, AIP Advances and Microscopy and Microanalysis.

In The Last Decade

N. Loubet

15 papers receiving 240 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Loubet United States 8 230 65 40 28 10 15 249
S. Baudot France 8 134 0.6× 42 0.6× 30 0.8× 35 1.3× 6 0.6× 24 160
C. Comboroure France 9 341 1.5× 128 2.0× 40 1.0× 33 1.2× 4 0.4× 12 364
R. Schreutelkamp Belgium 10 257 1.1× 51 0.8× 41 1.0× 39 1.4× 7 0.7× 31 276
C. Bowen United States 6 168 0.7× 44 0.7× 60 1.5× 42 1.5× 9 0.9× 14 211
F. Nouri United States 11 507 2.2× 58 0.9× 28 0.7× 43 1.5× 6 0.6× 28 524
G. Boccardi Belgium 10 213 0.9× 45 0.7× 33 0.8× 40 1.4× 19 1.9× 33 222
P. Charvát United States 4 390 1.7× 93 1.4× 47 1.2× 56 2.0× 9 0.9× 5 412
P. Gouraud France 5 115 0.5× 63 1.0× 29 0.7× 25 0.9× 9 0.9× 25 148
Piotr J. Cegielski Germany 6 150 0.7× 45 0.7× 57 1.4× 59 2.1× 11 1.1× 11 166
C. Kerner Belgium 11 347 1.5× 40 0.6× 26 0.7× 63 2.3× 6 0.6× 33 360

Countries citing papers authored by N. Loubet

Since Specialization
Citations

This map shows the geographic impact of N. Loubet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Loubet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Loubet more than expected).

Fields of papers citing papers by N. Loubet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Loubet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Loubet. The network helps show where N. Loubet may publish in the future.

Co-authorship network of co-authors of N. Loubet

This figure shows the co-authorship network connecting the top 25 collaborators of N. Loubet. A scholar is included among the top collaborators of N. Loubet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Loubet. N. Loubet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
2.
Bhuiyan, Maruf, S. Siddiqui, J. Li, et al.. (2021). Gate-Last I/O Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies. 2021 IEEE International Electron Devices Meeting (IEDM). 1–4. 4 indexed citations
3.
Mochizuki, Shinichi, Maruf Bhuiyan, Huimei Zhou, et al.. (2020). Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel. 2.3.1–2.3.4. 30 indexed citations
4.
Bhosale, Prasad, Nicholas A. Lanzillo, Tao Rui, et al.. (2020). Composite Interconnects for High-Performance Computing beyond the 7nm Node. 1–2. 3 indexed citations
5.
Bao, R., Kôji Watanabe, Jian Guo, et al.. (2019). Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications. 11.2.1–11.2.4. 26 indexed citations
6.
Tsutsui, Gen, Shinichi Mochizuki, N. Loubet, Stephen W. Bedell, & D. K. Sadana. (2019). Strain engineering in functional materials. AIP Advances. 9(3). 35 indexed citations
7.
Reboh, S., R. Coquand, N. Loubet, et al.. (2019). Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors. SPIRE - Sciences Po Institutional REpository. 11.5.1–11.5.4. 17 indexed citations
8.
Mochizuki, Shinichi, et al.. (2019). Precession Electron Diffraction (PED) Strain Measurements in Stacked Nanosheet Structures. Microscopy and Microanalysis. 25(S2). 2018–2019. 2 indexed citations
9.
Reboh, S., R. Coquand, Sylvain Barraud, et al.. (2018). Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology. Applied Physics Letters. 112(5). 32 indexed citations
10.
Hashemi, Pouya, Vijay Narayanan, N. Loubet, et al.. (2018). Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si. 35.1.1–35.1.4. 22 indexed citations
11.
Carr, Adra, C. Lavoie, H. van Meer, et al.. (2017). Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures. T216–T217. 19 indexed citations
12.
Reboh, S., et al.. (2016). Nanobeam Diffraction and Geometric Phase Analysis for Strain Measurements in Si/SiGe Nanosheet Structures. Microscopy and Microanalysis. 22(S3). 1528–1529. 2 indexed citations
13.
Lauer, Isaac, N. Loubet, J. A. Ott, et al.. (2015). Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance. 50 indexed citations
14.
Khakifirooz, A., Kangguo Cheng, Toshiharu Nagumo, et al.. (2012). Extremely thin SOI for system-on-chip applications. 1–4. 4 indexed citations
15.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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