SangHoon Shin

866 total citations
34 papers, 702 citations indexed

About

SangHoon Shin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, SangHoon Shin has authored 34 papers receiving a total of 702 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in SangHoon Shin's work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). SangHoon Shin is often cited by papers focused on Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). SangHoon Shin collaborates with scholars based in United States, South Korea and Taiwan. SangHoon Shin's co-authors include Muhammad A. Alam, Muhammad Abdul Wahab, Mengwei Si, Jiangjiang Gu, Woojin Ahn, P. D. Ye, Peide D. Ye, M. A. Wahab, Nathan J. Conrad and Tayfun Gokmen and has published in prestigious journals such as Applied Physics Letters, Journal of Alloys and Compounds and IEEE Transactions on Electron Devices.

In The Last Decade

SangHoon Shin

33 papers receiving 691 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
SangHoon Shin United States 16 589 124 83 75 46 34 702
Yongliang Zhou China 13 459 0.8× 91 0.7× 226 2.7× 120 1.6× 14 0.3× 71 756
Gael F. Close United States 15 498 0.8× 472 3.8× 195 2.3× 97 1.3× 24 0.5× 32 749
Xing Zhang China 12 664 1.1× 100 0.8× 63 0.8× 21 0.3× 80 1.7× 116 733
Min Xie China 12 401 0.7× 205 1.7× 147 1.8× 116 1.5× 55 1.2× 35 577
Rohit Sharma India 14 521 0.9× 243 2.0× 57 0.7× 31 0.4× 30 0.7× 100 627
Wenqin Mo China 12 310 0.5× 120 1.0× 49 0.6× 159 2.1× 28 0.6× 66 510
Weiming Cheng China 12 217 0.4× 125 1.0× 41 0.5× 133 1.8× 42 0.9× 71 543
Dick Henze United States 12 281 0.5× 40 0.3× 59 0.7× 43 0.6× 57 1.2× 27 482
Hui Zhu China 15 509 0.9× 226 1.8× 60 0.7× 131 1.7× 25 0.5× 84 672
Michael Hofstätter Austria 11 260 0.4× 92 0.7× 70 0.8× 18 0.2× 65 1.4× 34 365

Countries citing papers authored by SangHoon Shin

Since Specialization
Citations

This map shows the geographic impact of SangHoon Shin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by SangHoon Shin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites SangHoon Shin more than expected).

Fields of papers citing papers by SangHoon Shin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by SangHoon Shin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by SangHoon Shin. The network helps show where SangHoon Shin may publish in the future.

Co-authorship network of co-authors of SangHoon Shin

This figure shows the co-authorship network connecting the top 25 collaborators of SangHoon Shin. A scholar is included among the top collaborators of SangHoon Shin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with SangHoon Shin. SangHoon Shin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Sanghyeon, Jin Dong Song, Muhammad A. Alam, et al.. (2019). Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs. IEEE Journal of the Electron Devices Society. 7. 869–877. 23 indexed citations
2.
Tang, Jianshi, Douglas M. Bishop, Seyoung Kim, et al.. (2018). ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing. 13.1.1–13.1.4. 124 indexed citations
3.
Shin, SangHoon, et al.. (2018). High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics. P–GD.9. 4 indexed citations
4.
Shin, SangHoon, et al.. (2018). Performance Potential of Ge CMOS Technology From a Material-Device-Circuit Perspective. IEEE Transactions on Electron Devices. 65(5). 1679–1684. 10 indexed citations
5.
Kim, Sanghyeon, Seong Kwang Kim, SangHoon Shin, et al.. (2018). Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs. 54. 1–2. 2 indexed citations
6.
Shen, Lei, SangHoon Shin, Nuo Xu, et al.. (2017). Unified self-heating effect model for advanced digital and analog technology and thermal-aware lifetime prediction methodology. T136–T137. 10 indexed citations
7.
Si, Mengwei, Heng Wu, SangHoon Shin, et al.. (2017). Anomalous bias temperature instability on accumulation-mode Ge and III-V MOSFETs. 479. 6A–5.1. 1 indexed citations
8.
Wahab, Muhammad Abdul, SangHoon Shin, & Muhammad A. Alam. (2016). Spatio-temporal mapping of device temperature due to self-heating in Sub-22 nm transistors. XT–5. 9 indexed citations
9.
Shin, SangHoon, et al.. (2016). Substrate and layout engineering to suppress self-heating in floating body transistors. 15.7.1–15.7.4. 27 indexed citations
10.
Ahn, Woojin, SangHoon Shin, Reza Asadpour, et al.. (2016). Optimum filler geometry for suppression of moisture diffusion in molding compounds. 2. PA–1. 6 indexed citations
11.
Shin, SangHoon, M. A. Wahab, Woojin Ahn, et al.. (2015). Fundamental trade-off between short-channel control and hot carrier degradation in an extremely-thin silicon-on-insulator (ETSOI) technology. 20.3.1–20.3.4. 9 indexed citations
12.
Shin, SangHoon, Muhammad Abdul Wahab, Kerry Maize, et al.. (2015). Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs. IEEE Transactions on Electron Devices. 62(11). 3516–3523. 52 indexed citations
13.
Si, Mengwei, Nathan J. Conrad, SangHoon Shin, et al.. (2015). Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs. IEEE Transactions on Electron Devices. 62(11). 3508–3515. 39 indexed citations
14.
Shin, SangHoon, M. A. Wahab, Kerry Maize, et al.. (2014). Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs. 20.3.1–20.3.4. 18 indexed citations
15.
Conrad, Nathan J., Mengwei Si, SangHoon Shin, et al.. (2014). Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs. 20.1.1–20.1.4. 13 indexed citations
16.
Shin, SangHoon, Muhammad Abdul Wahab, Mengwei Si, et al.. (2014). Origin and implications of hot carrier degradation of Gate-all-around nanowire III–V MOSFETs. 4A.3.1–4A.3.6. 15 indexed citations
17.
Shin, SangHoon, Jiangjiang Gu, M. A. Wahab, et al.. (2013). Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs. 7.5.1–7.5.4. 28 indexed citations
18.
Barange, Nilesh, Youbin Kang, Young Dong Kim, et al.. (2013). Dielectric function and critical points of AlP determined by spectroscopic ellipsometry. Journal of Alloys and Compounds. 587. 361–364. 20 indexed citations
19.
Yoon, Jaeseung, et al.. (2010). Dielectric functions and interband transitions of In1−xAlxSb alloys. Applied Physics Letters. 97(11). 6 indexed citations
20.
Shin, SangHoon, et al.. (2008). Effects of the AlSb Buffer Layer and the InAs Channel Thicknesson the Electrical Properties of InAs/AlSb-Based 2-DEG HEMTStructures. Journal of the Korean Physical Society. 53(9(5)). 2719–2724. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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