P.K. McLarty

1.6k citations

37 papers · 1.2k indexed · h-index 17

Industrial and Manufacturing Engineering top 1%
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 31
- Advancements in Semiconductor Devices and Circuit Design 17
- Silicon Carbide Semiconductor Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 9
- Thin-Film Transistor Technologies 8
- Ferroelectric and Negative Capacitance Devices 5
- Silicon and Solar Cell Technologies 5
Computational Theory and Mathematics top 5%
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 4
Materials Chemistry

Co-authors: B. Jayant Baliga R.S. Gyurcsik D. Alok M. Bhatnagar J. J. Wortman Ralph K. Cavin Eric M. Vogel Veena Misra
Cited by: Industrial and Manufacturing Engineering Electrical and Electronic Engineering Computational Theory and Mathematics
Journals: IEEE Electron Device Letters (7 papers)Applied Physics Letters (7 papers)IEEE Transactions on Electron Devices (6 papers)
Partner nations: United States France Japan

In The Last Decade

P.K. McLarty

34 papers receiving 1.2k citations

Peers

Countries citing papers authored by P.K. McLarty

Since Specialization

Citations

This map shows the geographic impact of P.K. McLarty's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.K. McLarty with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.K. McLarty more than expected).

Fields of papers citing papers by P.K. McLarty

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.K. McLarty. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.K. McLarty. The network helps show where P.K. McLarty may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P.K. McLarty, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.K. McLarty Line = papers co-authored together P.K. McLarty links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Minority carrier generation in very thin silicon on insulator films P.K. McLarty,T. Elewa,B. Mazhari,M. Mukherjee,T. Ouisse,S. Cristoloveanu,Dimitris E. Ioannou,D.P. Vu	2003	0
2	Low contact resistivity ohmic contacts to 6H-silicon carbide D. Alok,B. Jayant Baliga,P.K. McLarty	2002	8
3	A new parameter extraction method for ultra-thin oxide SOI MOSFET's O. Faynot,S. Cristoloveanu,P.K. McLarty,C. Raynaud,J. Gautier	2002	7
4	Modeled tunnel currents for high dielectric constant dielectrics IEEE Transactions on Electron Devices ·Eric M. Vogel,Khaled Ahmed,Yao Zhong-yao,W.K. Henson,P.K. McLarty,G. Lucovsky,John R. Hauser,J. J. Wortman	1998	129
5	Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition Solid-State Electronics ·Hiba Dirawi,G. Ghibaudo,Eric M. Vogel,W. L. Hill,Veena Misra,P.K. McLarty,J. J. Wortman	1997	1
6	Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films IEEE Electron Device Letters ·Hiba Dirawi,G. Ghibaudo,T. Ouisse,Eric M. Vogel,W. L. Hill,Veena Misra,P.K. McLarty,J. J. Wortman	1996	39
7	On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs] IEEE Electron Device Letters ·Nan Du,P.K. McLarty,Jayant Baliga	1996	12
8	A simple parameter extraction method for ultra-thin oxide MOSFETs Solid-State Electronics ·P.K. McLarty,S. Cristoloveanu,O. Faynot,Veena Misra,John R. Hauser,J. J. Wortman	1995	59
9	On the mobility of n-channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition Applied Physics Letters ·P.K. McLarty,Veena Misra,W. L. Hill,J. J. Wortman,John R. Hauser,Hiba Dirawi,T. Ouisse	1995	2
10	Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide IEEE Electron Device Letters ·Nan Du,Veena Misra,P.K. McLarty,B. Jayant Baliga,J. J. Wortman	1995	6
11	Thermal oxidation of 6H-silicon carbide at enhanced growth rates IEEE Electron Device Letters ·D. Alok,B. Jayant Baliga,P.K. McLarty	1994	24
12	Single-wafer cluster tool performance: an analysis of throughput IEEE Transactions on Semiconductor Manufacturing ·Irma Handayani,P.K. McLarty,R.S. Gyurcsik,Ralph K. Cavin	1994	177
13	Thin oxynitride film metal-oxide-semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition Applied Physics Letters ·P.K. McLarty,W. L. Hill,Xiaoli Xu,Veena Misra,J. J. Wortman,Gari Harris	1993	9
14	Silicon-carbide high-voltage (400 V) Schottky barrier diodes IEEE Electron Device Letters ·M. Bhatnagar,P.K. McLarty,B. Jayant Baliga	1992	133
15	Optimization of SIMOX for VLSI by electrical characterization IEEE Transactions on Electron Devices ·Dimitris E. Ioannou,S. Cristoloveanu,Raviv Levy,Xueqian Zhong,P.K. McLarty,H.L. Hughes	1991	9
16	DLTS analysis of carrier generation transients in thin SOI MOSFETs IEEE Transactions on Electron Devices ·P.K. McLarty,Dimitris E. Ioannou	1990	5
17	The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS Journal of Electronic Materials ·P.K. McLarty,Dimitris E. Ioannou,H.L. Hughes	1990	5
18	Bulk traps in ultrathin SIMOX MOSFET's by current DLTS IEEE Electron Device Letters ·P.K. McLarty,Dimitris E. Ioannou,J.-P. Colinge	1988	20
19	Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation Applied Physics Letters ·P.K. McLarty,H.U. Scherer,K.F. Galloway,Dimitris E. Ioannou,D. Mathur	1987	13
20	On the Barrier Height of Al/p-Si Schottky Diodes physica status solidi (a) ·D.E. Ioannou,Ying Huang,P.K. McLarty,Shane Johnson	1986	7

About P.K. McLarty

P.K. McLarty is a scholar working on Electrical and Electronic Engineering, Industrial and Manufacturing Engineering, Ceramics and Composites, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 37 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Silicon Carbide Semiconductor Technologies (11 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Thin-Film Transistor Technologies (8 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Silicon and Solar Cell Technologies (5 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Industrial and Manufacturing Engineering (297 citations), Electrical and Electronic Engineering (844 citations), Computational Theory and Mathematics (127 citations), Atomic and Molecular Physics, and Optics (192 citations) and Materials Chemistry (227 citations). P.K. McLarty has collaborated with scholars based in United States, France and Japan. Frequent co-authors include B. Jayant Baliga, R.S. Gyurcsik, D. Alok, M. Bhatnagar, J. J. Wortman, Ralph K. Cavin, Eric M. Vogel, Veena Misra, John R. Hauser and N. A. El-Masry. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Semiconductor Manufacturing and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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