T. Ohguro

3.2k total citations
125 papers, 2.3k citations indexed

About

T. Ohguro is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, T. Ohguro has authored 125 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 122 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 17 papers in Biomedical Engineering. Recurrent topics in T. Ohguro's work include Advancements in Semiconductor Devices and Circuit Design (89 papers), Semiconductor materials and devices (88 papers) and Integrated Circuits and Semiconductor Failure Analysis (25 papers). T. Ohguro is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (89 papers), Semiconductor materials and devices (88 papers) and Integrated Circuits and Semiconductor Failure Analysis (25 papers). T. Ohguro collaborates with scholars based in Japan, Italy and United States. T. Ohguro's co-authors include Hiroshi Iwai, T. Yoshitomi, H.S. Momose, Mizuki Ono, M. Saito, Shun-ichiro Ohmi, Y. Katsumata, Shin Nakamura, T. Morimoto and E. Morifuji and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and IEEE Journal of Solid-State Circuits.

In The Last Decade

T. Ohguro

111 papers receiving 2.2k citations

Peers

Countries citing papers authored by T. Ohguro

Since Specialization

Citations

This map shows the geographic impact of T. Ohguro's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ohguro with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ohguro more than expected).

Fields of papers citing papers by T. Ohguro

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ohguro. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ohguro. The network helps show where T. Ohguro may publish in the future.

Co-authorship network of co-authors of T. Ohguro

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ohguro. A scholar is included among the top collaborators of T. Ohguro based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ohguro. T. Ohguro is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	New Extraction Method for Intrinsic Qrr of Power MOSFETs 2023 ·T. Hara, (unknown), T. Ohguro, (unknown)	0
2	Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor 2017 ·Physical Review Letters ·Keiji Ono, (unknown), Tetsufumi Tanamoto, T. Ohguro, Xixi Hu, Franco Nori	29
3	Scaling Strategy for Low Power RF Applications with Multi Gate Oxide Dual Work function (DWF) MOSFETs Utilizing Self-Aligned Integration Scheme 2013 ·Symposium on VLSI Technology ·Toshio Miyata, (unknown), A. Hokazono, T. Ohguro, Y. Toyoshima	1
4	Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation 2011 ·IEICE Technical Report; IEICE Tech. Rep. ·Y. Higashi, (unknown), H.S. Momose, T. Ohguro, (unknown)	4
5	Analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET 2009 ·T. Ohguro, K. Okano, (unknown), S. Inaba, (unknown), (unknown), H.S. Momose, Y. Toyoshima	4
6	90nm node RF CMOS technology with latch-up immunity on high-resistivity substrate 2009 ·(unknown), Y. Higashi, Masato Oda, K. Matsuzawa, (unknown), T. Ohguro, H.S. Momose, Y. Toyoshima	3
7	HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications 2007 ·TechConnect Briefs ·T. Ezaki, Tetsuya Iizuka, K. Matsumoto, (unknown), M. Miura–Mattausch, M. Miyake, Shunsuke Miyamoto, D. Navarro, T. Ohguro, N. Sadachika, (unknown)	1
8	MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design 2004 ·JSTS Journal of Semiconductor Technology and Science ·M. Miura–Mattausch, (unknown), T. Ohguro, T. Iizuka, (unknown), S. Kumashiro, Shingo Miyamoto	5
9	Scalable Parasitic Components Model of CMOS for RF Circuit Design 2003 ·IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences ·Nobuyuki Itoh, T. Ohguro, Kazuhiro Katoh, (unknown), (unknown), (unknown), (unknown)	7
10	110 GHz cutoff frequency of ultra-thin gate oxide p-MOSFETs on [110] surface-oriented Si substrate 2003 ·H.S. Momose, T. Ohguro, Kazunobu Kojima, Shin Nakamura, Y. Toyoshima	19
11	Silicided silicon-sidewall source and drain (S/sup 4/D) structure for high-performance 75-nm gate length pMOSFETs 2002 ·T. Yoshitomi, M. Saito, T. Ohguro, Mizuki Ono, H.S. Momose, Hiroshi Iwai	8
12	Ultrathin gate oxide CMOS on [111] surface-oriented Si substrate 2002 ·IEEE Transactions on Electron Devices ·H.S. Momose, T. Ohguro, Shigenari Nakamura, Y. Toyoshima, H. Ishiuchi, Hiroshi Iwai	36
13	Study of wafer orientation dependence on performance and reliability of CMOS with direct-tunneling gate oxide 2002 ·H.S. Momose, T. Ohguro, Shin Nakamura, Y. Toyoshima, H. Ishiuchi, Hiroshi Iwai	6
14	Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions 2002 ·Mizuki Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, Hiroshi Iwai	32
15	A 67 GHz fmax Lateral Bipolar Transistor with Co-silicided Base Electrode Structure on Thin Film SOI for RF Analog Applications 1999 ·European Solid-State Device Research Conference ·(unknown), (unknown), (unknown), T. Shino, (unknown), (unknown), (unknown), E. Morifuji, T. Ohguro, M. Yoshimi, Y. Katsumata, Shunsuke Watanabe, (unknown), H. Ishiuchi	2
16	Future perspective and scaling down roadmap for RF CMOS 1999 ·E. Morifuji, H.S. Momose, T. Ohguro, T. Yoshitomi, (unknown), F. Matsuoka, M. Kinugawa, Y. Katsumata, Hiroshi Iwai	76
17	Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS 1999 ·(unknown), T. Ohguro, B. Evans, (unknown), (unknown), Hideo Mabuchi, Dim‐Lee Kwong, E. Morifuji, T. Yoshitomi, H.S. Momose, M. Kinugawa, Y. Katsumata, (unknown)	12
18	<title>Advanced rf CMOS technology</title> 1999 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Hiroshi Iwai, T. Ohguro, E. Morifuji, T. Yoshitomi, (unknown), H.S. Momose, (unknown), (unknown), Y. Katsumata	0
19	A 0.25 µm CMOS I/Q-channel downconversion mixer with active coil for DCS-1800 applications 1998 ·European Solid-State Circuits Conference ·Johan Janssens, Michiel Steyaert, T. Ohguro	0
20	Comparison of Ti and Ni salicides as regards the electrical conductance of silicided films 1993 ·European Solid-State Device Research Conference ·T. Ohguro, T. Morimoto, Akira Nishiyama, Y. Ushiku, Hiroshi Iwai	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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