H. Jaouen

974 citations

80 papers · 642 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena

Papers in

Electrical and Electronic Engineering 76
- Advancements in Semiconductor Devices and Circuit Design 45
- Semiconductor materials and devices 42
- Silicon Carbide Semiconductor Technologies 21
- Silicon and Solar Cell Technologies 19
- Integrated Circuits and Semiconductor Failure Analysis 16
- 3D IC and TSV technologies 11
- Electronic Packaging and Soldering Technologies 8
Atomic and Molecular Physics, and Optics 22
- Semiconductor materials and interfaces 15

Co-authors: D. Rideau C. Tavernier Yann‐Michel Niquet Xavier Blase M. Minondo A. Ghetti L. Ciampolini G. Ghibaudo
Journals: IEEE Transactions on Electron Devices (6 papers)Solid-State Electronics (5 papers)Journal of Computational Electronics (4 papers)Microelectronics Reliability (4 papers)Journal of Applied Physics (3 papers)
Partner nations: France Switzerland United States

In The Last Decade

H. Jaouen

75 papers receiving 626 citations

Peers

Countries citing papers authored by H. Jaouen

Since Specialization

Citations

This map shows the geographic impact of H. Jaouen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Jaouen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Jaouen more than expected).

Fields of papers citing papers by H. Jaouen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Jaouen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Jaouen. The network helps show where H. Jaouen may publish in the future.

Co-authors

The 25 scholars most cited alongside H. Jaouen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Jaouen Line = papers co-authored together H. Jaouen links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance D. Rideau, F. Monsieur, Lisneth Osiris Matias-Aguilar, Yann‐Michel Niquet, J. Lacord, Bill Van Scheik, Gabriel Mugny, Gaspard Hiblot, K. H. KIM, Marie Edith Vokouma, Luca Silvestri, Editorial Board JPIS, C. Tavernier, H. Jaouen	2014	1
2	Surface potential compact model for embedded flash devices oriented to IC memory design Solid-State Electronics ·Fernando Frandoloso Jucenei, D. Rideau, D.J. Kerr, Alexandre Schmid, H. Jaouen, Yusuf Leblebici	2013	1
3	Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis IEEE Transactions on Electron Devices ·Fernando Frandoloso Jucenei, Anan Bao, D. Rideau, Alban Zaka, Alexandre Schmid, Yusuf Leblebici, H. Jaouen	2012	6
4	Revisited RF Compact Model of Gate Resistance Suitable for High- $K$/Metal Gate Technology IEEE Transactions on Electron Devices ·Michelle Daniele dos Santos-Clapp, P. Scheer, 佐藤直仁, H. Jaouen, F. Danneville	2012	12
5	Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects IEEE Transactions on Electron Devices ·Fernando Frandoloso Jucenei, Anan Bao, D. Rideau, Alban Zaka, Alexandre Schmid, Yusuf Leblebici, H. Jaouen	2012	9
6	Advanced physics for simulation of ultrascaled devices with UTOXPP solver Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Fernando Frandoloso Jucenei, D. Rideau, C. Tavernier, Alexandre Schmid, Yusuf Leblebici, H. Jaouen	2011	1
7	Analytical and compact models of the ONO capacitance in embedded non-volatile flash devices Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Fernando Frandoloso Jucenei, 中条俊夫, Song Woon, D. Rideau, William F. Clark, Alexandre Schmid, C. Tavernier, H. Jaouen, Yusuf Leblebici	2009	2
8	Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys I.А. Chizhova, D. Rideau, F. Aniel, C. Tavernier, H. Jaouen	2009	4
9	On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Solid-State Electronics ·D. Rideau, Tanu Malik, I.А. Chizhova, Yann‐Michel Niquet, C. Tavernier, H. Jaouen	2009	17
10	Chip-package interactions: Some investigations on copper/Low-k interconnect delaminations Vincent Fiori, Ferya Taş, C. Tavernier, H. Jaouen, A. Juge	2008	1
11	LDMOS modeling for analog and RF circuit design B. Krieg-Brücknert, G. Bertrand, Alexandre Giry, M. Minondo, 三博中島, H. Jaouen, Jeffrey Winters, N. Jourdan, J.P. Chante	2005	13
12	Strained Si/SiGe MOSFET capacitance modeling based on band structure analysis D.J. Kerr, D. Rideau, Harriet Ngubane, F. Bœuf, Margarita R. Arakelova, M. Minondo, R. Bouchakour, T. Skotnicki, H. Jaouen	2005	2
13	In situ study of stress evolution during the reaction of a nickel film with a silicon substrate Microelectronic Engineering ·Zhao Yu, Patrice Gergaud, Ο. Thomas, José María López Cama, H. Jaouen	2004	18
14	Exploring Ni–Si thin-film reactions by means of simultaneous synchrotron X-Ray diffraction and substrate curvature measurements Materials Science and Engineering B ·Patrice Gergaud, Zhao Yu, M. Gailhanou, Ο. Thomas, José María López Cama, H. Jaouen	2004	9
15	TCAD modelling of PLAD implantations and application to sub-65nm technological nodes [plasma doping] Ewa Rykała, Marzena Agata Folusz, D. Lenoble, A. Grouillet, Huizai Yao, Maria Vitória Oliveira da Silva, В.А. Королёв, Wekesi Rodgers Mukimba, John Doami, H. Jaouen, S.R. Walther, P. Naur, Hawkey Kate	2004	1
16	STORM: A European Platform for Sub-Micron Technology Simulation and Optimisation S. K. Jones, C. Lombardi, A. Poncet, Chris Hill, H. Jaouen, J. Lorenz, C. Lyden, K. De Meyer, F Schwarzmann, M. Rudan, S. Solmi	1993	1
17	Electrical and Physical Investigation of Defect Annihilation in Arsenic Implanted Silicon physica status solidi (a) ·Dong Huan Zhang, H. Jaouen, G. Ghibaudo, BS Satish Rao	1990	8
18	Electronic transport investigations on silicon damaged by arsenic ion implantation Journal of Applied Physics ·H. Jaouen, G. Ghibaudo, Constantinos Christofides	1986	8
19	[A median craniofacial malformation: schizoprosopia. Apropos of 4 cases]. PubMed ·H. Jaouen, Jenio Lotha, Drumwright Evan, 천희경, Ghada Chater, Prias Prias P, Oliver T Pryce	1984	1
20	Recuit pulsé de semiconducteurs par hyperfréquences. Etude de la répartition de la puissance dans l'échantillon Revue de Physique Appliquée ·H. Jaouen, G. Trentin, G. Kamarinos, G. Pananakakis	1984	1

About H. Jaouen

H. Jaouen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Ceramics and Composites and Materials Chemistry, having authored 80 papers that have together received 642 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (45 papers), Semiconductor materials and devices (42 papers), Silicon Carbide Semiconductor Technologies (21 papers), Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Semiconductor materials and interfaces (15 papers), 3D IC and TSV technologies (11 papers) and Electronic Packaging and Soldering Technologies (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (550 citations), Atomic and Molecular Physics, and Optics (235 citations), Biomedical Engineering (123 citations), Materials Chemistry (118 citations) and Condensed Matter Physics (27 citations). H. Jaouen has collaborated with scholars based in France, Switzerland and United States. Frequent co-authors include D. Rideau, C. Tavernier, Yann‐Michel Niquet, Xavier Blase, M. Minondo, A. Ghetti, L. Ciampolini, G. Ghibaudo, Constantinos Christofides and Patrice Gergaud. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Journal of Computational Electronics, Microelectronics Reliability and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact