Y. Gobil

606 citations

34 papers · 488 indexed · h-index 11

Impact in

Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices

Papers in

Electronic, Optical and Magnetic Materials 12
- Copper Interconnects and Reliability 11
Electrical and Electronic Engineering 31
- Semiconductor materials and devices 14
- Advanced Semiconductor Detectors and Materials 10
- Electronic Packaging and Soldering Technologies 6
- Chalcogenide Semiconductor Thin Films 6

Co-authors: J. Cibért S. Tatarenko K. Saminadayar G. Feuillet Le Si Dang E. Ligeon P.-H. Jouneau A.C. Chami
Journals: Microelectronic Engineering (4 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)Microelectronics Reliability (2 papers)Japanese Journal of Applied Physics (1 paper)
Partner nations: France Switzerland South Korea

In The Last Decade

Y. Gobil

31 papers receiving 467 citations

Peers

Countries citing papers authored by Y. Gobil

Since Specialization

Citations

This map shows the geographic impact of Y. Gobil's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Gobil with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Gobil more than expected).

Fields of papers citing papers by Y. Gobil

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Gobil. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Gobil. The network helps show where Y. Gobil may publish in the future.

Co-authors

The 25 scholars most cited alongside Y. Gobil, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Y. Gobil Line = papers co-authored together Y. Gobil links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations SHILAP Revista de lepidopterología ·I. Charlet, Fanny Morisot, Y. Gobil, A. Anotta, F. Gaillard, B. Duriez, E. Morvan	2025	0
2	Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm P_sat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique SPIRE - Sciences Po Institutional REpository ·A. Divay, Olivier Valorge, Christophe Dubarry, Mohammed Medbouhi, R. Franiatte, Daniel Mermin, Rémi Vélard, Y. Gobil, Fanny Morisot, E. Morvan, I. Charlet, Luca Lucci, J. Lugo-Alvarez, X. Garros	2024	1
3	CMOS Compatible 200 mm GaN-on-Si HEMTs for RF Switch Applications with 36 dBm CW Power Handling and 200 FS RonCoff Luca Lucci, I. Charlet, Y. Gobil, Fanny Morisot, Julien Delprato, Simon Ruel, C. Benotmane, Fabien Laulagnet, P. Dezest, R. Bon, Thomas Bordignon, Antonio Clemente, Arjun Kumar, A. Anotta, T. Billon, B. Duriez, E. Morvan	2024	0
4	Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts IEEE Transactions on Electron Devices ·Antoine Chanuel, Y. Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, J. Biscarrat, F. Aussenac, Nicolas Defrance, Christophe Gaquière, F. Gaillard, E. Morvan	2022	9
5	The development of x-ray bolometers based on SOI technology for astronomy Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. Aliane, Fabrice De Moro, P. Agnèse, C. Pigot, J. L. Sauvageot, V. Szeflinski, A. Gasse, M. Arnaud, Xavier de la Broïse, X.-F. Navick, Julien Routin, L. Mathieu, Jean-Charles Cigna, François Berger, H. Ribot, Y. Gobil	2008	2
6	X-Ray Micro-Calorimeter Based on Si Thermistors for X-Ray Astronomy: Design and First Measurements Journal of Low Temperature Physics ·A. Aliane, Fabrice De Moro, C. Pigot, P. Agnèse, Xavier de la Broïse, A. Gasse, X.-F. Navick, M. Karolak, H. Ribot, J.‐L. Sauvageot, V. Szeflinski, Y. Gobil, Diana Renaud, P. Rivallin, Hervé Geoffray	2008	2
7	Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect Microelectronic Engineering ·M. Fayolle, G. Passemard, M. Assous, D. Louis, Alessio Beverina, Y. Gobil, J. Cluzel, L. Arnaud	2002	18
8	Copper-SiOC-AirGap integration in a double level metal interconnect O. Demolliens, Y. Morand, M. Fayolle, M. Cochet, M. Assous, H. Feldis, D. Lonis, Jean-Claude Royer, Y. Gobil, G. Passemard, P. Maury, Fabrice Jourdan, M. Cordeau, Thomas Morel, L. Perroud, L. Ulmer, J.F. Lugard, D. Renaud	2002	2
9	Room temperature electroless plating copper seed layer process for damascene interlevel metal structures Microelectronic Engineering ·Joseph P. O’Kelly, K. Mongey, Y. Gobil, Joaquin Torres, P.V. Kelly, G.M. Crean	2000	50
10	Full CMP Integration of TiN Damascene Metal Gate Devices H. Achard, F. Ducroquet, F. Coudert, B. Prévitali, J.-F. Lugand, L. Ulmer, Thierry Farjot, Y. Gobil, M. Heitzmann, S. Tedesco, M.E. Nier, S. Deleonibus	2000	2
11	Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 μm inter-metal dielectric application Microelectronic Engineering ·L. Baud, G. Passemard, Y. Gobil, Hichem M’Saad, A. Corte, F. Pires, Pascal Fugier, Paul Noël, Patrick Rabinzohn, I. Beinglass	1997	5
12	Differential Body Effect Analysis and Optimization of the LArge Tilt Implanted Sloped Shallow Trench Isolation Process (LATI-STI) Japanese Journal of Applied Physics ·S. Deleonibus, M. Heitzmann, Y. Gobil, F. Martín, O. Demolliens, Jean-Charles Guibert Jean-Charles Guibert, A. Toffoli	1996	1
13	0.35μm CMOS Technology with Chemical Mechanical Polishing for Three Metallization Levels Planarization M. Lerme, C. Arena, S. Deleonibus, O. Demolliens, M. Fayolle, Y. Gobil, Guillaume Guégan, M. Heitzmann, M. Laurens, F. Martín, Y. Morand, P. Molle, F. Vinet	1994	1
14	RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAs Applied Surface Science ·S. Tatarenko, J. Cibért, Y. Gobil, G. Feuillet, K. Saminadayar, A.C. Chami, E. Ligeon	1990	39
15	Critical thickness in epitaxial CdTe/ZnTe Applied Physics Letters ·J. Cibért, Y. Gobil, Le Si Dang, S. Tatarenko, G. Feuillet, P.-H. Jouneau, K. Saminadayar	1990	78
16	(111) CdTe molecular beam epitaxy growth on misoriented (001) GaAs substrate Journal of Crystal Growth ·S. Tatarenko, J. Cibért, Y. Gobil, G. Feuillet, E. Ligeon, Le Si Dang, K. Saminadayar	1990	6
17	Epitaxial Growth of Ii-Vi Semiconductors on Vicinal GaAs Surfaces MRS Proceedings ·G. Feuillet, J. Cibért, E. Ligeon, Y. Gobil, K. Saminadayar, S. Tatarenko	1989	3
18	Growth of (111) CdTe on tilted (001) GaAs Applied Physics Letters ·J. Cibért, Y. Gobil, K. Saminadayar, S. Tatarenko, A.C. Chami, G. Feuillet, Le Si Dang, E. Ligeon	1989	38
19	Incommensurate phase of Te adsorbed on (001) GaAs Physical review. B, Condensed matter ·J. Cibért, K. Saminadayar, S. Tatarenko, Y. Gobil	1989	9
20	Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs Applied Physics Letters ·Le Si Dang, J. Cibért, Y. Gobil, K. Saminadayar, S. Tatarenko	1989	28

About Y. Gobil

Y. Gobil is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics, having authored 34 papers that have together received 488 indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), Copper Interconnects and Reliability (11 papers), Advanced Semiconductor Detectors and Materials (10 papers), Semiconductor Quantum Structures and Devices (7 papers), Electronic Packaging and Soldering Technologies (6 papers), Advanced Surface Polishing Techniques (6 papers), Chalcogenide Semiconductor Thin Films (6 papers) and GaN-based semiconductor devices and materials (4 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (145 citations), Atomic and Molecular Physics, and Optics (230 citations), Electrical and Electronic Engineering (415 citations), Materials Chemistry (172 citations) and Surfaces, Coatings and Films (25 citations). Y. Gobil has collaborated with scholars based in France, Switzerland and South Korea. Frequent co-authors include J. Cibért, S. Tatarenko, K. Saminadayar, G. Feuillet, Le Si Dang, E. Ligeon, P.-H. Jouneau, A.C. Chami, D. Mariolle and P.V. Kelly. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, IEEE Transactions on Electron Devices, Microelectronics Reliability and Japanese Journal of Applied Physics.

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