Louis Gerrer

476 total citations
44 papers, 362 citations indexed

About

Louis Gerrer is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Louis Gerrer has authored 44 papers receiving a total of 362 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 3 papers in Condensed Matter Physics and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Louis Gerrer's work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). Louis Gerrer is often cited by papers focused on Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). Louis Gerrer collaborates with scholars based in United Kingdom, France and Belgium. Louis Gerrer's co-authors include Salvatore Amoroso, Fikru Adamu-Lema, A. Asenov, Asen Asenov, Stanislav Markov, Razaidi Hussin, Christian Monzio Compagnoni, Andrea L. Lacaita, Alessandro S. Spinelli and Jie Ding and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

Louis Gerrer

42 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Louis Gerrer United Kingdom 12 342 31 30 25 15 44 362
Hideyuki Kikuchihara Japan 10 349 1.0× 37 1.2× 36 1.2× 10 0.4× 13 0.9× 56 361
Y. Taur United States 10 239 0.7× 22 0.7× 50 1.7× 18 0.7× 8 0.5× 19 264
Munkang Choi United States 11 329 1.0× 30 1.0× 18 0.6× 17 0.7× 19 1.3× 27 347
Jaspinder Kaur India 10 184 0.5× 24 0.8× 37 1.2× 79 3.2× 13 0.9× 41 236
T. Bucelot United States 14 336 1.0× 21 0.7× 69 2.3× 25 1.0× 10 0.7× 30 375
H. Hazama Japan 10 302 0.9× 17 0.5× 59 2.0× 35 1.4× 6 0.4× 28 334
Thomas Windbacher Austria 7 190 0.6× 26 0.8× 160 5.3× 39 1.6× 32 2.1× 33 250
Aloke K. Dutta India 11 296 0.9× 47 1.5× 28 0.9× 23 0.9× 19 1.3× 37 321
Zhicheng Wu Belgium 9 237 0.7× 111 3.6× 34 1.1× 34 1.4× 47 3.1× 33 278
G. Chindalore United States 10 384 1.1× 14 0.5× 103 3.4× 36 1.4× 16 1.1× 17 390

Countries citing papers authored by Louis Gerrer

Since Specialization
Citations

This map shows the geographic impact of Louis Gerrer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Louis Gerrer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Louis Gerrer more than expected).

Fields of papers citing papers by Louis Gerrer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Louis Gerrer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Louis Gerrer. The network helps show where Louis Gerrer may publish in the future.

Co-authorship network of co-authors of Louis Gerrer

This figure shows the co-authorship network connecting the top 25 collaborators of Louis Gerrer. A scholar is included among the top collaborators of Louis Gerrer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Louis Gerrer. Louis Gerrer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gerrer, Louis, X. Garros, J. Cluzel, et al.. (2021). Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT. IEEE Transactions on Electron Devices. 68(4). 2017–2024. 11 indexed citations
2.
Garros, X., Laurent Brunet, J. Lacord, et al.. (2021). Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. SPIRE - Sciences Po Institutional REpository. 1–5. 4 indexed citations
3.
Jaud, M.-A., Louis Gerrer, X. Garros, et al.. (2020). Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT. SPIRE - Sciences Po Institutional REpository. 15 indexed citations
4.
Sadi, Toufik, Liping Wang, Louis Gerrer, Vihar Georgiev, & Asen Asenov. (2015). Self-consistent physical modeling of SiOx-based RRAM structures. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 1–4. 3 indexed citations
5.
Georgiev, Vihar, et al.. (2015). Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 55. 1–4. 1 indexed citations
6.
Sadi, Toufik, Liping Wang, Louis Gerrer, & A. Asenov. (2015). Physical simulation of Si-based resistive random-access memory devices. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 385–388. 4 indexed citations
7.
Hussin, Razaidi, J. Franco, Danielle Vanhaeren, et al.. (2015). Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. 32. 238–241. 1 indexed citations
8.
Georgiev, Vihar, Salvatore Amoroso, Louis Gerrer, Fikru Adamu-Lema, & Asen Asenov. (2015). Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 246–249. 1 indexed citations
9.
Amoroso, Salvatore, Louis Gerrer, Mihail Nedjalkov, et al.. (2014). Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues. IEEE Transactions on Electron Devices. 61(5). 1292–1298. 4 indexed citations
10.
Gerrer, Louis, Salvatore Amoroso, Razaidi Hussin, & A. Asenov. (2014). RTN distribution comparison for bulk, FDSOI and FinFETs devices. Microelectronics Reliability. 54(9-10). 1749–1752. 7 indexed citations
11.
Gerrer, Louis, Salvatore Amoroso, Razaidi Hussin, Fikru Adamu-Lema, & A. Asenov. (2014). 3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability. 93–96.
12.
Asenov, A., Salvatore Amoroso, & Louis Gerrer. (2014). Progress in the simulation of time dependent statistical variability in nano CMOS transistors. 273–276. 2 indexed citations
13.
Gerrer, Louis, Jie Ding, Salvatore Amoroso, et al.. (2014). Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review. Microelectronics Reliability. 54(4). 682–697. 31 indexed citations
14.
Amoroso, Salvatore, Louis Gerrer, Asen Asenov, et al.. (2013). Quantum insights in gate oxide charge-trapping dynamics in nanoscale MOSFETs. 4. 25–28. 4 indexed citations
15.
Gerrer, Louis, Salvatore Amoroso, Stanislav Markov, Fikru Adamu-Lema, & A. Asenov. (2013). 3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET. IEEE Transactions on Electron Devices. 60(12). 4008–4013. 15 indexed citations
16.
Gerrer, Louis, et al.. (2013). From atoms to product reliability: toward a generalized multiscale simulation approach. Journal of Computational Electronics. 12(4). 638–650. 6 indexed citations
17.
Amoroso, Salvatore, Fikru Adamu-Lema, Stanislav Markov, Louis Gerrer, & Asen Asenov. (2012). 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices. The HKU Scholars Hub (University of Hong Kong). 1–4. 5 indexed citations
18.
Gerrer, Louis, Stanislav Markov, Salvatore Amoroso, Fikru Adamu-Lema, & Asen Asenov. (2012). Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs. Microelectronics Reliability. 52(9-10). 1918–1923. 7 indexed citations
19.
Gerrer, Louis, et al.. (2010). Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectronics Reliability. 50(9-11). 1259–1262. 2 indexed citations
20.
Gerrer, Louis, et al.. (2008). Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations. Microelectronics Journal. 40(2). 339–341. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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