Jeng Gong

681 total citations
69 papers, 550 citations indexed

About

Jeng Gong is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Biomedical Engineering. According to data from OpenAlex, Jeng Gong has authored 69 papers receiving a total of 550 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 8 papers in Condensed Matter Physics and 8 papers in Biomedical Engineering. Recurrent topics in Jeng Gong's work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Silicon Carbide Semiconductor Technologies (21 papers). Jeng Gong is often cited by papers focused on Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Silicon Carbide Semiconductor Technologies (21 papers). Jeng Gong collaborates with scholars based in Taiwan, China and United States. Jeng Gong's co-authors include Chih‐Fang Huang, Ko‐Tao Lee, Yu-Zung Chiou, Yan-Kuin Su, Erh-Kun Lai, Kuang-Yeu Hsieh, Hang-Ting Lue, Rich Liu, Kuang‐Chao Chen and Ling-Wu Yang and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Journal of Quantum Electronics.

In The Last Decade

Jeng Gong

67 papers receiving 528 citations

Peers

Jeng Gong
Jian Zhong China
Wanling Deng China
Mehdi Saremi United States
Gongwei Hu China
Arash Hazeghi United States
Teng Wang China
T. Nigam United States
T. Kauerauf Belgium
Mingmin Zhu China
J.-L. Ogier France
Jian Zhong China
Jeng Gong
Citations per year, relative to Jeng Gong Jeng Gong (= 1×) peers Jian Zhong

Countries citing papers authored by Jeng Gong

Since Specialization
Citations

This map shows the geographic impact of Jeng Gong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jeng Gong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jeng Gong more than expected).

Fields of papers citing papers by Jeng Gong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jeng Gong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jeng Gong. The network helps show where Jeng Gong may publish in the future.

Co-authorship network of co-authors of Jeng Gong

This figure shows the co-authorship network connecting the top 25 collaborators of Jeng Gong. A scholar is included among the top collaborators of Jeng Gong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jeng Gong. Jeng Gong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gong, Jeng, et al.. (2015). Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors. Japanese Journal of Applied Physics. 54(4S). 04DA01–04DA01. 1 indexed citations
2.
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Huang, Chih‐Fang, et al.. (2013). Dimension Dependence of Unusual HCI-Induced Degradation on N-Channel High-Voltage DEMOSFET. IEEE Transactions on Electron Devices. 60(5). 1723–1729. 5 indexed citations
4.
Yang, Shaohua, Chuan Cheng, Chengcheng Yao, et al.. (2012). 0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs. 401–404. 18 indexed citations
5.
Lin, Hong‐Ru, et al.. (2012). The Low Temperature Resistance Test of Buckypaper and Its Microwave Application. Procedia Engineering. 36. 589–596. 2 indexed citations
6.
Chien, Wei-Chih, Yi‐Chou Chen, Yu‐Yu Lin, et al.. (2011). A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current. Japanese Journal of Applied Physics. 50(4S). 04DD11–04DD11. 14 indexed citations
7.
Lee, Ko‐Tao, et al.. (2011). High-Performance 1-$\mu\hbox{m}$ GaN n-MOSFET With MgO/MgO–$\hbox{TiO}_{2}$ Stacked Gate Dielectrics. IEEE Electron Device Letters. 32(3). 306–308. 20 indexed citations
8.
Liu, Han‐Wen, et al.. (2011). Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges. Japanese Journal of Applied Physics. 50(1R). 14202–14202. 3 indexed citations
9.
Chang, Da‐Chiang, et al.. (2011). A 60‐GHz three‐stage low noise amplifier using 0.15‐μm gallium‐arsenic pseudomorphic high‐electron mobility transistor technology. Microwave and Optical Technology Letters. 54(2). 329–332. 1 indexed citations
10.
Lee, Ko‐Tao, et al.. (2009). Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber. IEEE Photonics Technology Letters. 21(7). 477–479. 8 indexed citations
11.
Gong, Jeng, et al.. (2009). A 5.7‐GHz low‐noise amplifier with source‐degenerated active inductor. Microwave and Optical Technology Letters. 51(8). 1955–1958. 3 indexed citations
12.
Chang, Da‐Chiang, et al.. (2009). Design of CMOS T/R switch using high‐substrate isolation and RF floated body for 1.9‐GHz applications. Microwave and Optical Technology Letters. 51(9). 2145–2149. 1 indexed citations
13.
Shih, Chun-Hsing, et al.. (2009). Latent noise in Schottky barrier MOSFETs. Journal of Statistical Mechanics Theory and Experiment. 2009(1). P01036–P01036. 8 indexed citations
14.
Wang, Szu-Yu, Hang-Ting Lue, Pei-Ying Du, et al.. (2008). Reliability and Processing Effects of Bandgap-Engineered SONOS (BE-SONOS) Flash Memory and Study of the Gate-Stack Scaling Capability. IEEE Transactions on Device and Materials Reliability. 8(2). 416–425. 14 indexed citations
15.
Chen, Yen‐Yu, et al.. (2007). Temperature effect of metal–oxide–semiconductor field-effect-transistors’ gate current evaluated with the mask dimensions. Solid-State Electronics. 52(2). 215–220. 1 indexed citations
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17.
Chiou, Yu-Zung, et al.. (2003). The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors. Journal of Electronic Materials. 32(5). 395–399. 26 indexed citations
18.
Gong, Jeng, et al.. (2002). The study of threshold voltage extraction of nitride spacer NMOS transistors in early stage hot carrier stress. IEEE Transactions on Electron Devices. 49(8). 1488–1490. 2 indexed citations
19.
Wu, Chung‐Yu, Yu Cheng, & Jeng Gong. (2002). The new CMOS 2 V low-power IF fully differential Rm-C bandpass amplifier for RF wireless receivers. 2. 633–636. 5 indexed citations
20.
Gong, Jeng, et al.. (1996). A physical model of base resistance from low to high currents for arbitrarily doped submicrometer BJTs. Solid-State Electronics. 39(7). 1100–1103. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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