Xinnan Lin

1.3k total citations
136 papers, 1.0k citations indexed

About

Xinnan Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Xinnan Lin has authored 136 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 132 papers in Electrical and Electronic Engineering, 26 papers in Materials Chemistry and 19 papers in Condensed Matter Physics. Recurrent topics in Xinnan Lin's work include Semiconductor materials and devices (75 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers) and Silicon Carbide Semiconductor Technologies (31 papers). Xinnan Lin is often cited by papers focused on Semiconductor materials and devices (75 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers) and Silicon Carbide Semiconductor Technologies (31 papers). Xinnan Lin collaborates with scholars based in China, Hong Kong and Taiwan. Xinnan Lin's co-authors include Mansun Chan, Lining Zhang, Jin He, Haijun Lou, Shengdong Zhang, Kuan‐Chang Chang, Lei Li, Shengqi Yang, Ying Xiao and Baili Zhang and has published in prestigious journals such as Applied Physics Letters, Advanced Functional Materials and ACS Applied Materials & Interfaces.

In The Last Decade

Xinnan Lin

125 papers receiving 969 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Xinnan Lin China 17 921 179 157 98 65 136 1.0k
Kow‐Ming Chang Taiwan 17 742 0.8× 86 0.5× 275 1.8× 37 0.4× 114 1.8× 90 823
Seong Kwang Kim South Korea 14 579 0.6× 96 0.5× 118 0.8× 66 0.7× 47 0.7× 63 634
Shujing Jia China 11 435 0.5× 74 0.4× 343 2.2× 92 0.9× 107 1.6× 29 552
Yongmin Baek United States 10 346 0.4× 111 0.6× 193 1.2× 46 0.5× 38 0.6× 24 514
El Mostafa Bourim South Korea 15 515 0.6× 136 0.8× 333 2.1× 29 0.3× 140 2.2× 30 667
Tiaoyang Li China 16 761 0.8× 168 0.9× 692 4.4× 96 1.0× 49 0.8× 27 1.0k
Shamik Das United States 8 395 0.4× 305 1.7× 208 1.3× 29 0.3× 38 0.6× 13 586
Jongmin Kim South Korea 13 432 0.5× 40 0.2× 192 1.2× 64 0.7× 73 1.1× 66 524
Xinhong Cheng China 16 754 0.8× 99 0.6× 405 2.6× 31 0.3× 65 1.0× 91 889
Cameron Danesh United States 7 217 0.2× 88 0.5× 128 0.8× 148 1.5× 43 0.7× 12 348

Countries citing papers authored by Xinnan Lin

Since Specialization
Citations

This map shows the geographic impact of Xinnan Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xinnan Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xinnan Lin more than expected).

Fields of papers citing papers by Xinnan Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xinnan Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xinnan Lin. The network helps show where Xinnan Lin may publish in the future.

Co-authorship network of co-authors of Xinnan Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Xinnan Lin. A scholar is included among the top collaborators of Xinnan Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xinnan Lin. Xinnan Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
He, Siyuan, Zhaohui Yang, Xiang Wang, et al.. (2025). Stepwise gradient etching for low-defect GaN Micro-LEDs with suppressed non-radiative recombination. Optics Letters. 50(22). 7155–7155.
2.
Yu, Hao, Lei Li, Zehui Peng, et al.. (2025). Integration of Non‐Volatile Multi‐Bit Storage and Logic Computing in GaN Enhancement‐Mode Devices for In‐Memory Computing. Advanced Functional Materials. 36(10).
3.
Lou, Haijun, et al.. (2024). The Study and Modeling of saturation drain voltage for junctionless FinFET. Micro and Nanostructures. 188. 207798–207798.
4.
Chang, Kuan‐Chang, et al.. (2024). Integrating ultraviolet sensing and memory functions in gallium nitride-based optoelectronic devices. Nanoscale Horizons. 9(7). 1166–1174. 1 indexed citations
5.
He, Hongyu, Junli Yin, Xinnan Lin, & Shengdong Zhang. (2023). Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs. IEEE Transactions on Electron Devices. 71(1). 11–17. 1 indexed citations
6.
Chang, Kuan‐Chang, et al.. (2023). Computational-fitting method for mobility extraction in GaN HEMT. RSC Advances. 13(46). 32694–32698.
7.
Li, Jian, Feng Lin, Bing Wang, et al.. (2022). 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer. Nanoscale Research Letters. 17(1). 14–14. 21 indexed citations
8.
9.
Liu, Meihua, et al.. (2020). Performance Enhancement of AlGaN/GaN MIS-HEMTs Realized via Supercritical Nitridation Technology. Chinese Physics Letters. 37(9). 97101–97101. 5 indexed citations
10.
Dai, Tianjiao, et al.. (2020). Charge Detrapping on Gate Edge of AlGaN/GaN HEMT Under Drain Stress. 1–3. 1 indexed citations
11.
Sun, Hui, et al.. (2017). Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process. IEEE Transactions on Electron Devices. 65(2). 622–628. 25 indexed citations
12.
Wang, Panni, Yihan Chen, Suwen Li, et al.. (2017). Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode. IEEE Journal of the Electron Devices Society. 5(5). 362–366. 4 indexed citations
13.
Lin, Xinnan, Baili Zhang, Ying Xiao, et al.. (2016). Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs. IEEE Transactions on Electron Devices. 1–7. 17 indexed citations
14.
Chen, Yihan, et al.. (2015). Interface engineering to enhance phase change memory programmability. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 29. 225–228.
15.
Frank, Xavier, et al.. (2013). A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure. Journal of Semiconductors. 34(12). 124001–124001. 4 indexed citations
16.
17.
Wang, Yinglei, et al.. (2010). Numerical study on heterodyne terahertz detection in field effect transistor. Optics Express. 18(8). 7782–7782. 2 indexed citations
18.
Zhang, Lining, et al.. (2010). Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET. Solid-State Electronics. 54(8). 806–808. 34 indexed citations
19.
Wang, Wei, et al.. (2009). Numerical Simulation of Programming and Read Process for Nano-Scale Phase-Change Memory (PCM) Cell. 1 indexed citations
20.
Zhang, Shengdong, Xinnan Lin, Ru Huang, Ruqi Han, & Mansun Chan. (2003). A self-aligned, electrically separable double-gate MOS transistor technology for dynamic threshold voltage application. IEEE Transactions on Electron Devices. 50(11). 2297–2299. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Kow‐Ming Chang Breakdown of academic impact, for papers by Seong Kwang Kim Breakdown of academic impact, for papers by Shujing Jia Breakdown of academic impact, for papers by Yongmin Baek Breakdown of academic impact, for papers by El Mostafa Bourim Breakdown of academic impact, for papers by Tiaoyang Li Breakdown of academic impact, for papers by Shamik Das Breakdown of academic impact, for papers by Jongmin Kim Breakdown of academic impact, for papers by Xinhong Cheng Breakdown of academic impact, for papers by Cameron Danesh
Rankless by CCL
2026