Stefan Degroote

2.4k total citations
89 papers, 2.0k citations indexed

About

Stefan Degroote is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Stefan Degroote has authored 89 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Condensed Matter Physics, 50 papers in Electrical and Electronic Engineering and 45 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Stefan Degroote's work include GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (37 papers) and Ga2O3 and related materials (25 papers). Stefan Degroote is often cited by papers focused on GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (37 papers) and Ga2O3 and related materials (25 papers). Stefan Degroote collaborates with scholars based in Belgium, France and Netherlands. Stefan Degroote's co-authors include Maarten Leys, Marianne Germain, Kai Cheng, Joff Derluyn, G. Borghs, Gustaaf Borghs, Ruben Lieten, Steven Boeykens, Maarten Kuijk and Domenica Visalli and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Stefan Degroote

86 papers receiving 1.9k citations

Peers

Countries citing papers authored by Stefan Degroote

Since Specialization

Citations

This map shows the geographic impact of Stefan Degroote's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stefan Degroote with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stefan Degroote more than expected).

Fields of papers citing papers by Stefan Degroote

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stefan Degroote. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stefan Degroote. The network helps show where Stefan Degroote may publish in the future.

Co-authorship network of co-authors of Stefan Degroote

This figure shows the co-authorship network connecting the top 25 collaborators of Stefan Degroote. A scholar is included among the top collaborators of Stefan Degroote based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stefan Degroote. Stefan Degroote is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment 2020 ·Micromachines ·Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, (unknown), (unknown), (unknown), Joff Derluyn, Stefan Degroote, Marianne Germain, (unknown), Idriss Abid, Elke Meißner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso	3
2	High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications 2020 ·Materials ·Alaleh Tajalli, Matteo Meneghini, (unknown), Riad Kabouche, Idriss Abid, (unknown), Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meißner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso	18
3	Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures 2019 ·physica status solidi (a) ·Riad Kabouche, Idriss Abid, (unknown), Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Farid Medjdoub	9
4	1900 V, 1.6 mΩ cm²AlN/GaN-on-Si power devices realized by local substrate removal 2014 ·Applied Physics Express ·(unknown), Isabelle Roch‐Jeune, Nicolas Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, Farid Medjdoub	54
5	Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers 2011 ·Journal of The Electrochemical Society ·Ruben Lieten, V. V. Afanas’ev, Nguyễn Hoàng Thoan, Stefan Degroote, W. Walukiewicz, G. Borghs	42
6	(Invited) Epitaxial Growth of III-Nitrides on Silicon Substrates 2010 ·ECS Transactions ·Stefan Degroote, Maarten Leys, Kai Cheng, (unknown), Joff Derluyn, Gustaaf Borghs, Marianne Germain	1
7	Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C 2010 ·Japanese Journal of Applied Physics ·Denis Marcon, M. Van Hove, Domenica Visalli, Joff Derluyn, J. Das, Farid Medjdoub, Stefan Degroote, Maarten Leys, Kai Cheng, R. Mertens, Marianne Germain, Gustaaf Borghs	11
8	Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy 2010 ·Journal of Applied Physics ·Lei Zhang, Kai Cheng, Stefan Degroote, Maarten Leys, Marianne Germain, G. Borghs	33
9	Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs 2010 ·IEEE Transactions on Electron Devices ·Domenica Visalli, M. Van Hove, Joff Derluyn, Puneet Srivastava, Denis Marcon, J. Das, (unknown), Stefan Degroote, Kai Cheng, (unknown), Marianne Germain, Gustaaf Borghs	20
10	Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf> 2009 ·Joff Derluyn, M. Van Hove, Domenica Visalli, Anne Lorenz, Denis Marcon, Puneet Srivastava, Karen Geens, (unknown), (unknown), Xuanwu Kang, J. Das, Farid Medjdoub, Kai Cheng, Stefan Degroote, Maarten Leys, G. Borghs, Marianne Germain	29
11	Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Stefan Degroote, Maarten Leys, Frank P. Schulte, (unknown), (unknown), Marianne Germain, (unknown), M. Heuken	55
12	AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance 2008 ·Domenica Visalli, Joff Derluyn, Stefan Degroote, (unknown), Kai Cheng, M. Germain, M. Van Hove, G. Borghs	1
13	In‐situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si₃N₄/AlGaN/GaN HEMT devices on Si (111) 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Marianne Germain, Kai Cheng, Joff Derluyn, Stefan Degroote, J. Das, Anne Lorenz, Denis Marcon, M. Van Hove, Maarten Leys, G. Borghs	13
14	High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy 2008 ·Applied Physics Letters ·Kai Cheng, Maarten Leys, Stefan Degroote, Marianne Germain, G. Borghs	63
15	Single crystalline GaN grown on porous Si(111) by MOVPE 2007 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Kai Cheng, Stefan Degroote, Maarten Leys, Benny Van Daele, Marianne Germain, Gustaaf Van Tendeloo, G. Borghs	1
16	Site location of Co in beta-FeSi2 2005 ·Journal of Applied Physics ·I. Dézsi, Cs. Fetzer, Maria Augusta Peduti Dal ́Molin Kiss, Stefan Degroote, A. Vantomme	52
17	Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors 2003 ·Applied Physics Letters ·Lars Zimmermann, Joachim John, Stefan Degroote, Gustaaf Borghs, Chris Van Hoof, (unknown)	31
18	Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl–FeSi multilayers grown by molecular beam epitaxy 1999 ·Hyperfine Interactions ·J. Dekoster, Stefan Degroote, Johan Meersschaut, (unknown), A. Vantomme, L. Bottyán, L. Deák, E. Szilágyi, D. L. Nagy, (unknown), G. Langouche	1
19	Structural characterization of metastable FeSi films and of multilayers 1998 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown), Stefan Degroote, J. Dekoster, A. Vantomme, G. Langouche	3
20	Effects of Growth Parameters on the Epitaxy of CoSi₂/Si(100) Formed by Reactive Deposition Epitaxy 1995 ·MRS Proceedings ·(unknown), Stefan Degroote, J. Dekoster, H. Bender, G. Langouche	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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