В.А. Ващенко

1.2k total citations
100 papers, 908 citations indexed

About

В.А. Ващенко is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, В.А. Ващенко has authored 100 papers receiving a total of 908 indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Computational Mechanics. Recurrent topics in В.А. Ващенко's work include Electrostatic Discharge in Electronics (79 papers), Integrated Circuits and Semiconductor Failure Analysis (50 papers) and Semiconductor materials and devices (38 papers). В.А. Ващенко is often cited by papers focused on Electrostatic Discharge in Electronics (79 papers), Integrated Circuits and Semiconductor Failure Analysis (50 papers) and Semiconductor materials and devices (38 papers). В.А. Ващенко collaborates with scholars based in United States, Belgium and Ukraine. В.А. Ващенко's co-authors include P. Hopper, A. Concannon, José Celaya, Sankalita Saha, Kai Goebel, Andrei Shibkov, Mirko Scholz, G. Groeseneken, Abhinav Saxena and S. Thijs and has published in prestigious journals such as IEEE Transactions on Electron Devices, Electronics Letters and Solid-State Electronics.

In The Last Decade

В.А. Ващенко

91 papers receiving 828 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
В.А. Ващенко United States	15	864	43	34	27	27	100	908
R. Letor Italy	14	479 0.6×	48 1.1×	11 0.3×	17 0.6×	35 1.3×	31	526
Ming‐Hsien Lin Taiwan	11	307 0.4×	10 0.2×	54 1.6×	48 1.8×	18 0.7×	35	369
Rostan Rodrigues United States	10	577 0.7×	119 2.8×	53 1.6×	25 0.9×	17 0.6×	36	602
Taraprasanna Dash India	10	361 0.4×	96 2.2×	21 0.6×	32 1.2×	22 0.8×	74	395
David L. Blackburn United States	13	636 0.7×	37 0.9×	36 1.1×	59 2.2×	17 0.6×	22	690
Tae Moon Roh South Korea	9	279 0.3×	13 0.3×	23 0.7×	10 0.4×	49 1.8×	54	318
Sang-Hun Kim South Korea	10	410 0.5×	40 0.9×	121 3.6×	52 1.9×	8 0.3×	32	465
Marcelo Schupbach United States	10	636 0.7×	45 1.0×	25 0.7×	15 0.6×	26 1.0×	30	660
Hui Pang China	10	414 0.5×	135 3.1×	20 0.6×	41 1.5×	14 0.5×	27	439
Richard Blanchard United States	7	405 0.5×	14 0.3×	23 0.7×	8 0.3×	13 0.5×	16	439

Countries citing papers authored by В.А. Ващенко

Since Specialization

Citations

This map shows the geographic impact of В.А. Ващенко's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В.А. Ващенко with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В.А. Ващенко more than expected).

Fields of papers citing papers by В.А. Ващенко

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В.А. Ващенко. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В.А. Ващенко. The network helps show where В.А. Ващенко may publish in the future.

Co-authorship network of co-authors of В.А. Ващенко

This figure shows the co-authorship network connecting the top 25 collaborators of В.А. Ващенко. A scholar is included among the top collaborators of В.А. Ващенко based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В.А. Ващенко. В.А. Ващенко is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ващенко, В.А. & Andrei Shibkov. (2024). Extending ESD Network Capability to EOS and Overvoltage Protection. 1–11.

Ващенко, В.А., et al.. (2019). REGULARITIES OF INFLUENCE OF ELECTRON-BEAM TECHNOLOGY ON TECHNICAL AND OPERATIONAL CHARACTERISTICS OF OPTOELECTRONIC DEVICES. 13(12). 546–549. 1 indexed citations

Ващенко, В.А., et al.. (2019). PERSPECTIVE DEVELOPMENT TENDENCIES OF ELECTRON BEAM TECHNOLOGY IN PRECISION INSTRUMENTS INDUSTRY. 4(2). 78–81. 1 indexed citations

Ващенко, В.А., et al.. (2017). Wafer level test methodology for HV latch-up spacing rules development in BCD process technologies. 1–5. 4 indexed citations

Ващенко, В.А. & Andrei Shibkov. (2014). Automated latchup analysis. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 2 indexed citations

Tazzoli, Augusto, В.А. Ващенко, & Andrei Shibkov. (2014). Effect of process technology variation on ESD clamp parameters. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 3 indexed citations

Tazzoli, Augusto, Slavica Malobabic, & В.А. Ващенко. (2014). Modeling of the test-fixture / Horizontal Coupling Plane interaction in system-level ESD test setups. Electrical Overstress/Electrostatic Discharge Symposium. 1–7.

Ващенко, В.А., et al.. (2014). Overcoming multi finger turn-on in HV DIACs using local poly-ballasting. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 2 indexed citations

Ващенко, В.А. & Andrei Shibkov. (2012). SCR clamps with transient voltage detection driver. Electrical Overstress/Electrostatic Discharge Symposium. 1–5. 4 indexed citations

10.

Griffoni, Alessio, D. Linten, S. Thijs, et al.. (2012). HBM ESD Robustness of GaN-on-Si Schottky Diodes. IEEE Transactions on Device and Materials Reliability. 12(4). 589–598. 4 indexed citations

11.

Saha, Sankalita, et al.. (2011). Accelerated aging with electrical overstress and prognostics for power MOSFETs. NASA STI Repository (National Aeronautics and Space Administration). 1–6. 60 indexed citations

12.

Thijs, S., Mirko Scholz, D. Linten, et al.. (2010). SCCF — System to component level correlation factor. Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 12 indexed citations

13.

Linten, D., S. Thijs, Alessio Griffoni, et al.. (2010). HBM parameter extraction and Transient Safe Operating Area. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 2 indexed citations

14.

Ващенко, В.А., et al.. (2009). Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components. NASA Technical Reports Server (NASA). 6 indexed citations

15.

Ващенко, В.А., et al.. (2008). A dual-base triggered SCR with very low leakage current and adjustable trigger voltage. Electrical Overstress/Electrostatic Discharge Symposium. 242–248. 17 indexed citations

16.

Ващенко, В.А. & P. Hopper. (2006). Dual-direction Isolated NMOS-SCR device for system level ESD protection. Electrical Overstress/Electrostatic Discharge Symposium. 64–68. 1 indexed citations

17.

Thijs, S., D. Linten, M. Natarajan, et al.. (2006). RF ESD protection strategies - the design and performance trade-off challenges. 484–491. 8 indexed citations

18.

Ващенко, В.А., et al.. (2005). Implementation of high V T turn-on in low-voltage SCR devices. Electrical Overstress/Electrostatic Discharge Symposium. 1–6. 3 indexed citations

19.

Concannon, A., et al.. (2004). ESD protection of double-diffusion devices in submicron CMOS processes. 261–264. 19 indexed citations

20.

Ващенко, В.А., et al.. (1997). Simulation of avalanche injection filamentation in MOSFET's and IGBT's. European Solid-State Device Research Conference. 316–319. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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