P. Hopper

515 total citations
46 papers, 380 citations indexed

About

P. Hopper is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Hopper has authored 46 papers receiving a total of 380 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 1 paper in Condensed Matter Physics and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Hopper's work include Electrostatic Discharge in Electronics (37 papers), Integrated Circuits and Semiconductor Failure Analysis (27 papers) and Semiconductor materials and devices (23 papers). P. Hopper is often cited by papers focused on Electrostatic Discharge in Electronics (37 papers), Integrated Circuits and Semiconductor Failure Analysis (27 papers) and Semiconductor materials and devices (23 papers). P. Hopper collaborates with scholars based in United States, Belgium and Austria. P. Hopper's co-authors include В.А. Ващенко, A. Concannon, D. Linten, Victor P. Kuznetsov, S. Thijs, Elyse Rosenbaum, Mirko Scholz, G. Groeseneken, W.J. Kindt and M. Ershov and has published in prestigious journals such as IEEE Transactions on Electron Devices, Microelectronics Reliability and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

P. Hopper

44 papers receiving 352 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Hopper United States	12	377	11	5	4	3	46	380
A.Z.H. Wang United States	7	376 1.0×	19 1.7×	6 1.2×	5 1.3×		7	380
Jizhi Liu China	11	306 0.8×	6 0.5×	4 0.8×	5 1.3×	3 1.0×	50	310
Hun-Hsien Chang Taiwan	6	241 0.6×	7 0.6×	12 2.4×	2 0.5×	2 0.7×	14	241
A. Andreini Italy	9	270 0.7×	10 0.9×	21 4.2×	4 1.0×	5 1.7×	38	276
Jon Barth United States	9	357 0.9×	24 2.2×	4 0.8×	14 3.5×	5 1.7×	29	357
Guido Notermans Netherlands	10	297 0.8×	13 1.2×	11 2.2×	1 0.3×	1 0.3×	37	304
N. Feilchenfeld United States	8	171 0.5×	6 0.5×	10 2.0×	5 1.3×	6 2.0×	17	174
Slavica Malobabic United States	9	301 0.8×	7 0.6×	16 3.2×	6 1.5×		24	304
B. Woolery United States	5	142 0.4×	10 0.9×	3 0.6×	5 1.3×		6	142
Bingxu Ning China	10	301 0.8×	29 2.6×	8 1.6×	11 2.8×		42	304

Countries citing papers authored by P. Hopper

Since Specialization

Citations

This map shows the geographic impact of P. Hopper's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Hopper with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Hopper more than expected).

Fields of papers citing papers by P. Hopper

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Hopper. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Hopper. The network helps show where P. Hopper may publish in the future.

Co-authorship network of co-authors of P. Hopper

This figure shows the co-authorship network connecting the top 25 collaborators of P. Hopper. A scholar is included among the top collaborators of P. Hopper based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Hopper. P. Hopper is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Griffoni, Alessio, D. Linten, S. Thijs, et al.. (2012). HBM ESD Robustness of GaN-on-Si Schottky Diodes. IEEE Transactions on Device and Materials Reliability. 12(4). 589–598. 4 indexed citations

Thijs, S., Mirko Scholz, D. Linten, et al.. (2010). SCCF — System to component level correlation factor. Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 12 indexed citations

Ershov, M., et al.. (2010). Numerical simulation of metal interconnects of power semiconductor devices. 185–188. 11 indexed citations

Linten, D., S. Thijs, Alessio Griffoni, et al.. (2010). HBM parameter extraction and Transient Safe Operating Area. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 2 indexed citations

Ващенко, В.А., et al.. (2010). Study of power arrays in ESD operation regimes. Journal of International Crisis and Risk Communication Research. 1–8. 3 indexed citations

Scholz, Mirko, D. Linten, S. Thijs, et al.. (2009). On-wafer human metal model measurements for system-level ESD analysis. VUBIR (Vrije Universiteit Brussel). 1–9. 12 indexed citations

Ji, Chang‐Hyeon, et al.. (2009). Electroplated Metal Buried Interconnect and Through-Wafer Metal-Filled Via Technology for High-Power Integrated Electronics. IEEE Transactions on Advanced Packaging. 32(3). 695–702. 7 indexed citations

Ващенко, В.А., et al.. (2008). A dual-base triggered SCR with very low leakage current and adjustable trigger voltage. Electrical Overstress/Electrostatic Discharge Symposium. 242–248. 17 indexed citations

Ващенко, В.А. & P. Hopper. (2006). Dual-direction Isolated NMOS-SCR device for system level ESD protection. Electrical Overstress/Electrostatic Discharge Symposium. 64–68. 1 indexed citations

10.

Ващенко, В.А. & P. Hopper. (2006). A new Principle for a Self-Protecting Power Transistor Array Design. 1–4. 8 indexed citations

11.

Ващенко, В.А., et al.. (2005). Implementation of high V T turn-on in low-voltage SCR devices. Electrical Overstress/Electrostatic Discharge Symposium. 1–6. 3 indexed citations

12.

Ващенко, В.А., et al.. (2005). Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-RESURF junction. 565–572. 5 indexed citations

13.

Ващенко, В.А. & P. Hopper. (2005). Bipolar SCR ESD devices. Microelectronics Reliability. 45(3-4). 457–471. 10 indexed citations

14.

Concannon, A., et al.. (2004). ESD protection of double-diffusion devices in submicron CMOS processes. 261–264. 19 indexed citations

15.

Ващенко, В.А. & P. Hopper. (2003). Simulation of Si-Ge BiCMOS ESD structures operation including spatial current instability mode. 2. 745–748. 5 indexed citations

16.

Ващенко, В.А., et al.. (2003). LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits. Microelectronics Reliability. 43(1). 61–69. 10 indexed citations

17.

Ващенко, В.А., et al.. (2003). Emitter injection control in LVTSCR for latch-up free ESD protection. 2. 741–744. 3 indexed citations

18.

Ващенко, В.А., et al.. (2003). Quasi-3D simulation approach for comparative evaluation of triggering ESD protection structures. Microelectronics Reliability. 43(3). 427–437. 1 indexed citations

19.

Bashir, Rashid, et al.. (2001). A complementary bipolar technology family with a Vertically Integrated PNP for high-frequency analog applications. IEEE Transactions on Electron Devices. 48(11). 2525–2534. 14 indexed citations

20.

Hopper, P., et al.. (1995). The MASTER Framework. Microelectronics Journal. 26(2-3). 177–190. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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