T. Prunty

2.4k citations

26 papers · 2.0k indexed · h-index 17

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 24
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 8
Electrical and Electronic Engineering top 2%
- Radio Frequency Integrated Circuit Design 11
- Silicon Carbide Semiconductor Technologies 9
- Semiconductor materials and devices 8
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 6
Materials Chemistry
- ZnO doping and properties 2
Biomedical Engineering
- Acoustic Wave Resonator Technologies 4

Co-authors: J. R. Shealy I.C. Kizilyalli L.F. Eastman Andrew Edwards Özgür Aktaş V. Tilak J. Smart Hyungtak Kim
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Crystal Growth (1 paper)
Partner nations: United States

In The Last Decade

T. Prunty

26 papers receiving 1.9k citations

Peers

Countries citing papers authored by T. Prunty

Since Specialization

Citations

This map shows the geographic impact of T. Prunty's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Prunty with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Prunty more than expected).

Fields of papers citing papers by T. Prunty

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Prunty. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Prunty. The network helps show where T. Prunty may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Prunty, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Prunty Line = papers co-authored together T. Prunty links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Enhancing Topical Pharmacotherapy for Acne and Rosacea: Vehicle Choices and Outcomes. PubMed ·Lawrence J. Green,Edward Lain,T. Prunty,Robert W. Rhoades	2022	10
2	4-kV and 2.8-$\text{m}\Omega $ -cm² Vertical GaN p-n Diodes With Low Leakage Currents IEEE Electron Device Letters ·I.C. Kizilyalli,T. Prunty,Özgür Aktaş	2015	114
3	3.7 kV Vertical GaN PN Diodes IEEE Electron Device Letters ·I.C. Kizilyalli,Andrew Edwards,Hui Nie,Dave Bour,T. Prunty,Don Disney	2014	120
4	Vertical Power p-n Diodes Based on Bulk GaN IEEE Transactions on Electron Devices ·I.C. Kizilyalli,Andrew Edwards,Özgür Aktaş,T. Prunty,D. P. Bour	2014	292
5	1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">$\Omega $ </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">$^{2}$ </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates IEEE Electron Device Letters ·Hui Nie,Quentin Diduck,Brian Alvarez,Andrew Edwards,Brendan M. Kayes,Ming Zhang,Paul Borchiellini,T. Prunty,Dave Bour,I.C. Kizilyalli	2014	287
6	Signal generation, control, and frequency conversion AlGaN/GaN HEMT MMICs IEEE Transactions on Microwave Theory and Techniques ·V. Kaper,Richard M. Thompson,T. Prunty,J. R. Shealy	2005	41
7	Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT V. Kaper,V. Tilak,Louise Burchill,Rachel Thompson,T. Prunty,L.F. Eastman,J. R. Shealy	2004	3
8	Hot electron induced degradation of undoped AlGaN/GaN HFETs Microelectronics Reliability ·Hyungtak Kim,A. Vertiatchikh,Richard M. Thompson,V. Tilak,T. Prunty,H. Mayer-Kaupp,L.F. Eastman	2003	24
9	Improved fabrication process for obtaining high power density AlGaN/GaN HEMTs Rachel Thompson,V. Kaper,T. Prunty,J. R. Shealy	2003	4
10	Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation IEEE Electron Device Letters ·Hyungtak Kim,Richard M. Thompson,V. Tilak,T. Prunty,J. R. Shealy,L.F. Eastman	2003	152
11	Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias V. Kaper,V. Tilak,Louise Burchill,T. Prunty,J. Smart,L.F. Eastman,J. R. Shealy	2003	7
12	Power limits of polarization-induced AlGaN/GaN HEMT's L.F. Eastman,Joané Jansen,J. Smart,V. Tilak,Eduardo M. Chumbes,Hyungtak Kim,T. Prunty,Nils Weimann,R. Dimitrov,O. Ambacher,W. J. Schaff,J. R. Shealy	2002	1
13	An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer Journal of Physics Condensed Matter ·J. R. Shealy,V. Kaper,V. Tilak,T. Prunty,J. Smart,Yılmaz Akmeşe,L.F. Eastman	2002	95
14	Progress in High-Power, High Frequency AlGaN/GaN HEMTs physica status solidi (a) ·L.F. Eastman,V. Tilak,V. Kaper,J. Smart,Rachel Thompson,Louise Burchill,J. R. Shealy,T. Prunty	2002	31
15	Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors T. Prunty,J. Smart,Eduardo M. Chumbes,B. K. Ridley,L.F. Eastman,J. R. Shealy	2002	21
16	Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors Eduardo M. Chumbes,J. Smart,T. Prunty,J. R. Shealy	2002	4
17	Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor Electronics Letters ·A. Vertiatchikh,L.F. Eastman,W. J. Schaff,T. Prunty	2002	71
18	Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs IEEE Electron Device Letters ·V. Tilak,Louise Burchill,V. Kaper,Hyungtak Kim,T. Prunty,J. Smart,J. R. Shealy,L.F. Eastman	2001	117
19	Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates IEEE Transactions on Electron Devices ·Eduardo M. Chumbes,J. Smart,T. Prunty,J. R. Shealy	2001	103
20	Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures. MRS Internet Journal of Nitride Semiconductor Research ·Alexander N. Cartwright,Ж. Чжун,T. Prunty,D. P. Bour,Michael Kneissl	1999	7

About T. Prunty

T. Prunty is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Pharmaceutical Science, having authored 26 papers that have together received 2.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Radio Frequency Integrated Circuit Design (11 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (8 papers), Ga2O3 and related materials (8 papers), Semiconductor Quantum Structures and Devices (6 papers), Acoustic Wave Resonator Technologies (4 papers) and ZnO doping and properties (2 papers). The work is most often cited by research in Condensed Matter Physics (1.8k citations), Electronic, Optical and Magnetic Materials (785 citations), Electrical and Electronic Engineering (1.5k citations), Atomic and Molecular Physics, and Optics (431 citations) and Materials Chemistry (340 citations). T. Prunty has collaborated with scholars based in United States. Frequent co-authors include J. R. Shealy, I.C. Kizilyalli, L.F. Eastman, Andrew Edwards, Özgür Aktaş, V. Tilak, J. Smart, Hyungtak Kim, Eduardo M. Chumbes and D. P. Bour. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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