C. Basceri

1.6k citations

29 papers · 1.4k indexed · h-index 15

Impact in

Materials Chemistry top 5%
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Microwave Dielectric Ceramics Synthesis
- Silicon Carbide Semiconductor Technologies

Papers in ⓘ

Condensed Matter Physics 6
- GaN-based semiconductor devices and materials 6
Electrical and Electronic Engineering 25
- Semiconductor materials and devices 14
- Silicon Carbide Semiconductor Technologies 11
- Thin-Film Transistor Technologies 4

Co-authors: S. K. Streiffer (11 shared papers)Angus I. Kingon (8 shared papers)Rainer Waser (5 shared papers)A. I. Kingon (3 shared papers)M. Schumacher (2 shared papers)G. Dietz (1 shared paper)Scott R. Summerfelt (3 shared papers)Charles B. Parker (4 shared papers)
Journals: Journal of Applied Physics (4 papers)physica status solidi (a) (1 paper)Applied Physics Letters (1 paper)IEEE Transactions on Semiconductor Manufacturing (1 paper)Interface Science (1 paper)
Partner nations: United States Germany China

In The Last Decade

C. Basceri

27 papers receiving 1.3k citations

Peers

Countries citing papers authored by C. Basceri

Since Specialization

Citations

This map shows the geographic impact of C. Basceri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Basceri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Basceri more than expected).

Fields of papers citing papers by C. Basceri

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Basceri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Basceri. The network helps show where C. Basceri may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Basceri, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Basceri Line = papers co-authored together C. Basceri links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 29 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition Journal of Applied Physics ·C. Basceri, S. K. Streiffer, Angus I. Kingon, Rainer Waser	1997	311
2	Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories Journal of Applied Physics ·G. Dietz, M. Schumacher, Rainer Waser, S. K. Streiffer, C. Basceri, A. I. Kingon	1997	291
3	Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1−x)Ti1+yO3+z thin films grown by chemical vapor deposition Journal of Applied Physics ·S. K. Streiffer, C. Basceri, Charles B. Parker, S. E. Lash, Angus I. Kingon	1999	225
4	High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories MRS Bulletin ·A. I. Kingon, S. K. Streiffer, C. Basceri, Scott R. Summerfelt	1996	184
5	Synthesis and characterization of high purity, single phase GaN powder Powder Diffraction ·Cengiz M. Balkaş, C. Basceri, R. F. Davis	1995	58
6	100 mm 4HN-SiC Wafers with Zero Micropipe Density Materials science forum ·R.T. Leonard, Yuri I. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I.I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, V. F. Tsvetkov, R. Zilli, E. Deyneka, H. McD. Hobgood, Vijay Balakrishna, Calvin H. Carter	2008	45
7	Dielectric Behavior of CVD (Ba,Sr)TiO₃ thin Films on Pt/Si MRS Proceedings ·S. K. Streiffer, C. Basceri, A. I. Kingon, S. Lipa, S. Bilodeau, R. Carl, Peter C. Van Buskirk	1995	31
8	Leakage mechanisms and dielectric properties of Al2O3/TiN-based metal-insulator-metal capacitors Applied Physics Letters ·Shuang Meng, C. Basceri, B. Busch, Garo Derderian, Gurtej Sandhu	2003	28
9	Resistance degradation behavior of Ba_0.7Sr_0.3TiO₃ thin films compared to mechanisms found in titanate ceramics and single crystals Integrated ferroelectrics ·M. Grossmann, Susanne Hoffmann‐Eifert, S. Gusowski, Rainer Waser, S. K. Streiffer, C. Basceri, Charles B. Parker, S. E. Lash, Angus I. Kingon	1998	23
10	Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates Applied Physics Express ·Travis J. Anderson, Andrew D. Koehler, Marko J. Tadjer, Jennifer K. Hite, Anindya Nath, Nadeemullah A. Mahadik, Özgür Aktaş, V. A. Odnoblyudov, C. Basceri, Karl D. Hobart, Francis J. Kub	2017	21
11	Leakage Currents in CVD (Ba,Sr)TiO₃ Thin Films MRS Proceedings ·C. Basceri, S. K. Streiffer, Angus I. Kingon, Steve Bilodeau, R. Carl, Peter C. Van Buskirk, Scott R. Summerfelt, Paul C. McIntyre, Rainer Waser	1996	19
12	Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT) Materials science forum ·C. Basceri, I.I. Khlebnikov, Yuri I. Khlebnikov, Peter G. Muzykov, Monica Sharma, George Stratiy, Murat N. Silan, Cengiz M. Balkaş	2006	18
13	Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates IEEE Transactions on Semiconductor Manufacturing ·Xiangdong Li, Karen Geens, D. Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot, Shuzhen You, Dirk Fahle, H. Hahn, M. Heuken, Vlad Odnoblyudov, Özgür Aktaş, C. Basceri, Denis Marcon, G. Groeseneken, Stefaan Decoutere	2020	17
14	Defect Status in SiC Manufacturing Materials science forum ·Elif Berkman, R.T. Leonard, Michael J. Paisley, Yuri I. Khlebnikov, Michael O’Loughlin, Albert A. Burk, Adrian R. Powell, D.P. Malta, E. Deyneka, M.F. Brady, I.I. Khlebnikov, V. F. Tsvetkov, H. McD. Hobgood, Joseph J. Sumakeris, C. Basceri, Vijay Balakrishna, Calvin H. Carter, Cengiz M. Balkaş	2009	17
15	Grain Boundaries in Barium Strontium Titanate Thin Films: Structure, Chemistry and Influence on Electronic Properties Interface Science ·Susanne Stemmer, S. K. Streiffer, Nigel D. Browning, C. Basceri, Angus I. Kingon	2000	17
16	Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC Journal of Applied Physics ·W. C. Mitchel, William D. Mitchell, Z.-Q. Fang, D. C. Look, S. R. Smith, H. E. SMITH, I.I. Khlebnikov, Yuri I. Khlebnikov, C. Basceri, Cengiz M. Balkaş	2006	13
17	Ir and Ru bottom electrodes for (Ba, Sr)TiO3 thin films deposited by liquid delivery source chemical vapor deposition Thin Solid Films ·Won-Jae Lee, C. Basceri, S. K. Streiffer, Angus I. Kingon, Dooyoung Yang, Yung Park, Ho‐Gi Kim	1998	13
18	An Important Failure Mechanism in MOCVD (Ba,Sr)TiO₃ thin Films: Resistance Degradation MRS Proceedings ·C. Basceri, S. E. Lash, Charles B. Parker, S. K. Streiffer, Angus I. Kingon, M. Grossmann, Susanne Hoffmann‐Eifert, M. Schumacher, Rainer Waser, S. Bilodeau, R. Carlt, Peter C. Van Buskirk, Scott R. Summerfelt	1997	9
19	SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices Materials science forum ·Albert A. Burk, Michael O’Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, Lara Garrett, K. G. Irvine, Adrian R. Powell, Yuri I. Khlebnikov, R.T. Leonard, C. Basceri, Brett Hull, Anant Agarwal	2008	7
20	Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications Travis J. Anderson, Lunet E. Luna, Andrew D. Koehler, Marko J. Tadjer, Karl D. Hobart, Francis J. Kub, Özgür Aktaş, V. A. Odnoblyudov, C. Basceri	2018	6

About C. Basceri

C. Basceri is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Ceramics and Composites, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 29 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (11 papers), Ferroelectric and Piezoelectric Materials (9 papers), GaN-based semiconductor devices and materials (6 papers), Electronic and Structural Properties of Oxides (5 papers), Thin-Film Transistor Technologies (4 papers), Acoustic Wave Resonator Technologies (3 papers) and Ga2O3 and related materials (3 papers). The work is most often cited by research in Materials Chemistry (1.1k citations), Electrical and Electronic Engineering (973 citations), Electronic, Optical and Magnetic Materials (284 citations), Condensed Matter Physics (124 citations) and Biomedical Engineering (393 citations). C. Basceri has collaborated with scholars based in United States, Germany and China. Frequent co-authors include S. K. Streiffer, Angus I. Kingon, Rainer Waser, A. I. Kingon, M. Schumacher, G. Dietz, Scott R. Summerfelt, Charles B. Parker, Cengiz M. Balkaş and R. F. Davis. Their work appears in journals such as Journal of Applied Physics, physica status solidi (a), Applied Physics Letters, IEEE Transactions on Semiconductor Manufacturing and Interface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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