C. Basceri

1.6k total citations
29 papers, 1.4k citations indexed

About

C. Basceri is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, C. Basceri has authored 29 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 6 papers in Condensed Matter Physics. Recurrent topics in C. Basceri's work include Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Ferroelectric and Piezoelectric Materials (9 papers). C. Basceri is often cited by papers focused on Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Ferroelectric and Piezoelectric Materials (9 papers). C. Basceri collaborates with scholars based in United States, Germany and China. C. Basceri's co-authors include S. K. Streiffer, Angus I. Kingon, Rainer Waser, A. I. Kingon, Scott R. Summerfelt, G. Dietz, M. Schumacher, Charles B. Parker, Cengiz M. Balkaş and R. F. Davis and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

C. Basceri

27 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Basceri United States 15 1.1k 973 393 284 124 29 1.4k
Brady J. Gibbons United States 19 764 0.7× 497 0.5× 285 0.7× 338 1.2× 183 1.5× 57 1.0k
Akira Kamisawa Japan 18 1.0k 0.9× 743 0.8× 415 1.1× 361 1.3× 44 0.4× 37 1.2k
J. Finder United States 16 964 0.9× 839 0.9× 227 0.6× 272 1.0× 39 0.3× 24 1.1k
L. A. Wills United States 14 854 0.8× 451 0.5× 442 1.1× 268 0.9× 33 0.3× 27 1.0k
L. Kammerdiner United States 14 596 0.5× 332 0.3× 312 0.8× 241 0.8× 118 1.0× 33 784
P. Verardi Italy 17 512 0.5× 384 0.4× 361 0.9× 144 0.5× 105 0.8× 56 765
B. Nagaraj United States 18 1.3k 1.2× 645 0.7× 432 1.1× 788 2.8× 184 1.5× 21 1.5k
Guillaume Saint‐Girons France 21 973 0.9× 811 0.8× 175 0.4× 282 1.0× 47 0.4× 81 1.2k
Congbing Tan China 16 681 0.6× 296 0.3× 267 0.7× 364 1.3× 63 0.5× 52 850
T. Sands United States 16 1.4k 1.3× 545 0.6× 580 1.5× 694 2.4× 200 1.6× 36 1.5k

Countries citing papers authored by C. Basceri

Since Specialization
Citations

This map shows the geographic impact of C. Basceri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Basceri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Basceri more than expected).

Fields of papers citing papers by C. Basceri

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Basceri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Basceri. The network helps show where C. Basceri may publish in the future.

Co-authorship network of co-authors of C. Basceri

This figure shows the co-authorship network connecting the top 25 collaborators of C. Basceri. A scholar is included among the top collaborators of C. Basceri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Basceri. C. Basceri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Xiangdong, Karen Geens, D. Wellekens, et al.. (2020). Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates. IEEE Transactions on Semiconductor Manufacturing. 33(4). 534–538. 17 indexed citations
2.
Odnoblyudov, V. A., Özgür Aktaş, & C. Basceri. (2020). (Invited) 200mm GaN Power: Technology and Commercialization Status on Scalable QST® Platform. ECS Meeting Abstracts. MA2020-02(26). 1814–1814. 1 indexed citations
3.
Anderson, Travis J., Lunet E. Luna, Özgür Aktaş, et al.. (2019). Lateral GaN JFET Devices on Large Area Engineered Substrates. ECS Journal of Solid State Science and Technology. 8(12). Q226–Q229. 2 indexed citations
4.
Basceri, C.. (2018). (Invited) High Performance & Scalable GaN Device Manufacturing Status on 8-Inch Diameter QST® Platform. ECS Meeting Abstracts. MA2018-02(34). 1159–1159. 1 indexed citations
5.
Anderson, Travis J., Andrew D. Koehler, Marko J. Tadjer, et al.. (2017). Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates. Applied Physics Express. 10(12). 126501–126501. 21 indexed citations
6.
Leonard, R.T., Michael J. Paisley, Michael O’Loughlin, et al.. (2009). Defect Status in SiC Manufacturing. Materials science forum. 615-617. 3–6. 17 indexed citations
7.
Leonard, R.T., Adrian R. Powell, C. Basceri, et al.. (2008). 100 mm 4HN-SiC Wafers with Zero Micropipe Density. Materials science forum. 600-603. 7–10. 45 indexed citations
8.
Carlson, E.P., C. Basceri, Jason R. Jenny, et al.. (2006). Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates. Materials science forum. 527-529. 443–446. 3 indexed citations
9.
Mitchel, W. C., William D. Mitchell, Z.-Q. Fang, et al.. (2006). Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC. Journal of Applied Physics. 100(4). 13 indexed citations
10.
11.
Streiffer, S. K., et al.. (1999). Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1−x)Ti1+yO3+z thin films grown by chemical vapor deposition. Journal of Applied Physics. 86(8). 4565–4575. 225 indexed citations
12.
Grossmann, M., Susanne Hoffmann‐Eifert, Rainer Waser, et al.. (1998). Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals. Integrated ferroelectrics. 22(1-4). 83–94. 23 indexed citations
13.
Basceri, C., S. K. Streiffer, Angus I. Kingon, & Rainer Waser. (1997). The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition. Journal of Applied Physics. 82(5). 2497–2504. 311 indexed citations
14.
Basceri, C., Charles B. Parker, S. K. Streiffer, et al.. (1997). An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation. MRS Proceedings. 493. 9 indexed citations
15.
Dietz, G., M. Schumacher, Rainer Waser, et al.. (1997). Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories. Journal of Applied Physics. 82(5). 2359–2364. 291 indexed citations
16.
Basceri, C.. (1997). Electrical and dielectric properties of (barium, strontium) titanium trioxide thin film capacitors for ultra-high density dynamic random access memories. 1 indexed citations
17.
Basceri, C., S. K. Streiffer, Angus I. Kingon, et al.. (1996). Leakage Currents in CVD (Ba,Sr)TiO3 Thin Films. MRS Proceedings. 433. 19 indexed citations
18.
Kingon, A. I., S. K. Streiffer, C. Basceri, & Scott R. Summerfelt. (1996). High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories. MRS Bulletin. 21(7). 46–52. 184 indexed citations
19.
Balkaş, Cengiz M., C. Basceri, & R. F. Davis. (1995). Synthesis and characterization of high purity, single phase GaN powder. Powder Diffraction. 10(4). 266–268. 58 indexed citations
20.
Basceri, C., A. Cüneyt Taş, & Muharrem Timuçin. (1995). Characterization of new solid solution phases in (Y,Ca)(Cr,Co)O 3 system. Powder Diffraction. 10(1). 40–43. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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