Alessio Griffoni

655 total citations
48 papers, 525 citations indexed

About

Alessio Griffoni is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Hardware and Architecture. According to data from OpenAlex, Alessio Griffoni has authored 48 papers receiving a total of 525 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 3 papers in Condensed Matter Physics and 2 papers in Hardware and Architecture. Recurrent topics in Alessio Griffoni's work include Semiconductor materials and devices (37 papers), Electrostatic Discharge in Electronics (26 papers) and Integrated Circuits and Semiconductor Failure Analysis (23 papers). Alessio Griffoni is often cited by papers focused on Semiconductor materials and devices (37 papers), Electrostatic Discharge in Electronics (26 papers) and Integrated Circuits and Semiconductor Failure Analysis (23 papers). Alessio Griffoni collaborates with scholars based in Belgium, Italy and United States. Alessio Griffoni's co-authors include Eddy Simoen, Cor Claeys, G. Groeseneken, Robert A. Reed, Ronald D. Schrimpf, S. Thijs, D. Linten, Simone Gerardin, Gaudenzio Meneghesso and A. Paccagnella and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science and Molecular Therapy — Nucleic Acids.

In The Last Decade

Alessio Griffoni

45 papers receiving 496 citations

Peers

Alessio Griffoni

EEE

CMP

CNC

C.R. Cirba United States

Vincent Huard France

G.H. Johnson United States

N. Fel France

Donghyup Shin United States

Gianluca Boselli United States

Rainer Minixhofer Austria

Josef Watts United States

Zhengxuan Zhang China

Moon-Kyu Cho United States

C.R. Cirba United States

Alessio Griffoni

572 ×1.1

EEE

44 ×0.8

6 ×0.5

CMP

28 ×2.3

6 ×0.8

CNC

Citations per year, relative to Alessio Griffoni Alessio Griffoni (= 1×) peers C.R. Cirba

Countries citing papers authored by Alessio Griffoni

Since Specialization

Citations

This map shows the geographic impact of Alessio Griffoni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alessio Griffoni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alessio Griffoni more than expected).

Fields of papers citing papers by Alessio Griffoni

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alessio Griffoni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alessio Griffoni. The network helps show where Alessio Griffoni may publish in the future.

Co-authorship network of co-authors of Alessio Griffoni

This figure shows the co-authorship network connecting the top 25 collaborators of Alessio Griffoni. A scholar is included among the top collaborators of Alessio Griffoni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alessio Griffoni. Alessio Griffoni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Vandevelde, Bart, Alessio Griffoni, Franco Zanon, & Geert Willems. (2018). Methodology for Solder-Joint Lifetime Prediction of LED-Based PCB Assemblies. IEEE Transactions on Device and Materials Reliability. 18(3). 377–382. 8 indexed citations

Meneghini, Matteo, Marco Barbato, Nicola Trivellin, et al.. (2014). ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements. Microelectronics Reliability. 54(6-7). 1143–1149. 4 indexed citations

Rech, Paolo, Patrick Girard, Alessio Griffoni, et al.. (2012). Neutron-Induced Multiple Bit Upsets on Two Commercial SRAMs Under Dynamic-Stress. IEEE Transactions on Nuclear Science. 59(4). 893–899. 11 indexed citations

Griffoni, Alessio, D. Linten, S. Thijs, et al.. (2012). HBM ESD Robustness of GaN-on-Si Schottky Diodes. IEEE Transactions on Device and Materials Reliability. 12(4). 589–598. 4 indexed citations

Mahatme, N. N., En Xia Zhang, Robert A. Reed, et al.. (2012). Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs. IEEE Transactions on Nuclear Science. 59(6). 2966–2973. 18 indexed citations

Mahatme, N. N., Ronald D. Schrimpf, Robert A. Reed, et al.. (2012). Total ionizing dose effects on ultra thin buried oxide floating body memories. 50. MY.3.1–MY.3.5. 1 indexed citations

Claeys, Cor, M. Aoulaiche, Eddy Simoen, et al.. (2012). Radiation hardness aspects of advanced FinFET and UTBOX devices. 31. 1–2. 1 indexed citations

Thijs, S., Alessio Griffoni, Dimitri Linten, et al.. (2011). On gated diodes for ESD protection in bulk FinFET CMOS technology. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 15 indexed citations

Scholz, Mirko, S. Thijs, Alessio Griffoni, et al.. (2011). System-level ESD protection of high-voltage tolerant IC pins-A case study. VUBIR (Vrije Universiteit Brussel). 35–38. 1 indexed citations

10.

Griffoni, Alessio, Dimitri Linten, Eddy Simoen, et al.. (2011). Neutron-induced failure in super-junction, IGBT, and SiC power devices. TU/e Research Portal. 226–231. 7 indexed citations

11.

Thijs, S., et al.. (2011). Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices. 38. 6.4.1–6.4.4. 9 indexed citations

12.

Griffoni, Alessio. (2010). ESD and Ionizing Radiation Effects on Ultrathin Body SOI and Multiple Gate Technologies. Molecular Therapy — Nucleic Acids. 18. 916–926. 1 indexed citations

13.

Linten, D., S. Thijs, Alessio Griffoni, et al.. (2010). HBM parameter extraction and Transient Safe Operating Area. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 2 indexed citations

14.

Thijs, S., Mirko Scholz, D. Linten, et al.. (2010). SCCF — System to component level correlation factor. Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 12 indexed citations

15.

Thijs, S., Kuba Rączkowski, D. Linten, et al.. (2009). CDM and HBM analysis of ESD protected 60 GHz power amplifier in 45 nm low-power digital CMOS. 1–5. 9 indexed citations

16.

Griffoni, Alessio, Marco Silvestri, Simone Gerardin, et al.. (2009). Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays. IEEE Transactions on Nuclear Science. 56(4). 2205–2212. 5 indexed citations

17.

Griffoni, Alessio, Simone Gerardin, Gaudenzio Meneghesso, et al.. (2009). Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs. Padua Research Archive (University of Padova). 103. 267–274. 1 indexed citations

18.

Griffoni, Alessio, Augusto Tazzoli, Simone Gerardin, et al.. (2008). Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques. Research Padua Archive (University of Padua). 59–66. 2 indexed citations

19.

Thijs, S., C. Russ, David Trémouilles, et al.. (2008). Design methodology of FinFET devices that meet IC-Level HBM ESD targets. 294–302. 9 indexed citations

20.

Griffoni, Alessio, Simone Gerardin, Gaudenzio Meneghesso, et al.. (2008). Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs. IEEE Transactions on Nuclear Science. 55(6). 3182–3188. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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