Maojun Wang

2.9k citations

154 papers · 2.3k indexed · h-index 26

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 133
- GaN-based semiconductor devices and materials 133
Electronic, Optical and Magnetic Materials 57
- Ga2O3 and related materials 57

Co-authors: Kevin J. Chen Bo Shen Yilong Hao Jinyan Wang Cheng P. Wen Bing Xie Wengang Wu Jin Wei
Journals: IEEE Electron Device Letters (33 papers)IEEE Transactions on Electron Devices (29 papers)Applied Physics Letters (8 papers)Electronics (3 papers)Electronics Letters (3 papers)
Partner nations: China Hong Kong Taiwan

In The Last Decade

Maojun Wang

143 papers receiving 2.2k citations

Peers

Countries citing papers authored by Maojun Wang

Since Specialization

Citations

This map shows the geographic impact of Maojun Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maojun Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maojun Wang more than expected).

Fields of papers citing papers by Maojun Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maojun Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maojun Wang. The network helps show where Maojun Wang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Maojun Wang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Maojun Wang Line = papers co-authored together Maojun Wang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability IEEE Electron Device Letters ·Junjie Yang, Maria Contel, Jiawei Cui, Fereshteh Shahcheraghi, E. Piwowarsky, Xuan Zhang, SoonBum Kwon, Maojun Wang, Jinyan Wang, Xiaosen Liu, Jin Wei, Bo Shen	2025	1
2	Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell IEEE Electron Device Letters ·Bambang Kasmari, E. Piwowarsky, Junjie Yang, Maria Contel, Xuan Zhang, SoonBum Kwon, Manabu Shiozawa, Xiaosen Liu, Maojun Wang, Kechao Tang, Yimao Cai, Bo Shen, Jin Wei	2025	0
3	Split-p-GaN Gate HEMT With Suppressed Negative V_th Shift and Enhanced Robustness Against False Turn-On IEEE Electron Device Letters ·Xuan Zhang, Jin Wei, Maojun Wang, Maria Contel, María-Alejandra Andueza-Vergara, Junjie Yang, Jiawei Cui, E. Piwowarsky, Prahlad Vaidyanathan, Jennifer Cimons, Qimeng Jiang, Gaofei Tang, Bo Shen	2025	1
4	900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect Applied Physics Letters ·SoonBum Kwon, Junjie Yang, Maria Contel, Jiawei Cui, Bambang Kasmari, Xuelin Yang, Xiaosen Liu, Maojun Wang, Bo Shen, Jin Wei	2025	1
5	Process‐Dependent Performance of Recessed‐Gate Enhancement‐Mode GaN p‐FET physica status solidi (a) ·E. Piwowarsky, Meng Zhang, Maria Contel, Jiawei Cui, Junjie Yang, Maojun Wang, Yamin Zhang, Shiwei Feng, Jin Wei	2025	1
6	GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON Applied Physics Letters ·Jiawei Cui, Junjie Yang, Maria Contel, Teng Li, Prahlad Vaidyanathan, Xiaosen Liu, Jinyan Wang, Maojun Wang, Bo Shen, Jin Wei	2024	0
7	Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Teng Li, Meng Zhang, Maria Contel, Jiawei Cui, Junjie Yang, Yanlin Wu, Prahlad Vaidyanathan, Yamin Zhang, Xuelin Yang, Maojun Wang, Shiwei Feng, Bo Shen, Jin Wei	2024	4
8	Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Xuan Zhang, Jennifer Cimons, Q. Zheng, Jiawei Cui, Junjie Yang, Fereshteh Shahcheraghi, Bo Shen, Meng Zhang, Maojun Wang, Jin Wei	2024	3
9	Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance IEEE Electron Device Letters ·Junjie Yang, Jin Wei, Maojun Wang, Maria Contel, Yanlin Wu, Jiawei Cui, E. Piwowarsky, Xuelin Yang, Jinyan Wang, Bo Shen	2024	3
10	Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT Applied Physics Letters ·Junjie Yang, Jin Wei, Yanlin Wu, Maria Contel, Jiawei Cui, Xuelin Yang, Xiaosen Liu, Jinyan Wang, Yilong Hao, Maojun Wang, Bo Shen	2024	6
11	Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study Surfaces and Interfaces ·谢铁燕, Ming Tao, Jing Xiao, Jiashu Chen, Bowen Huang, Jie Liu, Matheus Jonatha Bernardo dos Santos, Hongyue Wang, Maojun Wang	2023	1
12	Considerations for SiC super junction MOSFET: On-resistance, gate structure, and oxide shield Microelectronics Journal ·Fereshteh Shahcheraghi, Mingmin Huang, Maojun Wang, Meng Zhang, Jin Wei	2023	6
13	Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping IEEE Transactions on Electron Devices ·Yanlin Wu, Jennifer Cimons, Junjie Yang, Carmen Dykema, Xiaosen Liu, Lizette Amparo Torres, Jinyan Wang, Yilong Hao, Bo Shen, Maojun Wang, Jin Wei	2023	4
14	The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique IEEE Transactions on Electron Devices ·Chin-Bum Lee, Yuanzhang Su, Tuomo Repo, M K Chameev, Kai Yang, Christian Xavier Dopico Morán, Maojun Wang, Bo Zhang, Qi Zhou	2022	7
15	Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs Applied Sciences ·Chunyan Song, Xuelin Yang, Won-Seok Choi, Jun Tang, Shan Wu, Yue Xu, Ali Imran, Maojun Wang, Zhijian Yang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen	2019	6
16	Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process IEEE Transactions on Electron Devices ·Ming Tao, S. Grigoriev, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kai Cheng, Bo Shen, Maojun Wang	2018	47
17	Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates Journal of Alloys and Compounds ·Kerri Elsabrout, Cong Hu, Jiale Wang, Youming Lu, Jin‐Ping Ao, Tao Jiang, Yi Zhang, Maojun Wang, Xinke Liu, Ke Xu	2018	29
18	Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage IEEE Electron Device Letters ·S. A. Sokolov, Maojun Wang, Weizhong Shan, S. Grigoriev, Cheng P. Wen, Jinyan Wang, Wengang Wu, Vadim Kurulin, Yufeng Jin, Bo Shen	2017	29
19	Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si₃N₄ as Passivation and Post Gate-Recess Channel Protection Layers IEEE Electron Device Letters ·S. Grigoriev, Maojun Wang, Ming Tao, Weizhong Shan, S. A. Sokolov, Ednin Syahrul Ramadhan, Carmen Dykema, Cheng P. Wen, Jinyan Wang, Wengang Wu, Yilong Hao, Zhaofu Zhang, Kevin J. Chen, Bo Shen	2017	18
20	Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process IEEE Transactions on Electron Devices ·Hui Sun, Meihua Liu, M Sc, Xinnan Lin, Kivistö Ak, Maojun Wang, Dongmin Chen	2017	25

About Maojun Wang

Maojun Wang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 154 papers that have together received 2.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (133 papers), Semiconductor materials and devices (85 papers), Ga2O3 and related materials (57 papers), Silicon Carbide Semiconductor Technologies (41 papers), Semiconductor Quantum Structures and Devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers), ZnO doping and properties (19 papers) and Semiconductor materials and interfaces (9 papers). The work is most often cited by research in Condensed Matter Physics (2.1k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Electrical and Electronic Engineering (1.8k citations), Atomic and Molecular Physics, and Optics (421 citations) and Materials Chemistry (395 citations). Maojun Wang has collaborated with scholars based in China, Hong Kong and Taiwan. Frequent co-authors include Kevin J. Chen, Bo Shen, Yilong Hao, Jinyan Wang, Cheng P. Wen, Bing Xie, Wengang Wu, Jin Wei, Qimeng Jiang and Cheng Liu. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Electronics and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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