Martin Kuball

14.3k total citations
409 papers, 10.6k citations indexed

About

Martin Kuball is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Martin Kuball has authored 409 papers receiving a total of 10.6k indexed citations (citations by other indexed papers that have themselves been cited), including 264 papers in Condensed Matter Physics, 249 papers in Electrical and Electronic Engineering and 168 papers in Materials Chemistry. Recurrent topics in Martin Kuball's work include GaN-based semiconductor devices and materials (258 papers), Semiconductor materials and devices (137 papers) and Silicon Carbide Semiconductor Technologies (99 papers). Martin Kuball is often cited by papers focused on GaN-based semiconductor devices and materials (258 papers), Semiconductor materials and devices (137 papers) and Silicon Carbide Semiconductor Technologies (99 papers). Martin Kuball collaborates with scholars based in United Kingdom, United States and Germany. Martin Kuball's co-authors include Michael J. Uren, James W. Pomeroy, Andrei Sarua, K.P. Hilton, T. Martin, R.S. Balmer, James H. Edgar, Hangfeng Ji, Joseph M. Hayes and M. Ťapajna and has published in prestigious journals such as Advanced Materials, Nature Communications and Physical review. B, Condensed matter.

In The Last Decade

Martin Kuball

393 papers receiving 10.3k citations

Peers

Countries citing papers authored by Martin Kuball

Since Specialization

Citations

This map shows the geographic impact of Martin Kuball's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Martin Kuball with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Martin Kuball more than expected).

Fields of papers citing papers by Martin Kuball

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Martin Kuball. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Martin Kuball. The network helps show where Martin Kuball may publish in the future.

Co-authorship network of co-authors of Martin Kuball

This figure shows the co-authorship network connecting the top 25 collaborators of Martin Kuball. A scholar is included among the top collaborators of Martin Kuball based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Martin Kuball. Martin Kuball is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Microwave plasma modelling for thick diamond deposition on III-nitrides 2025 ·Carbon ·Jerome A. Cuenca, (unknown), Menno J. Kappers, Soumen Mandal, Martin Kuball, Rachel A. Oliver, Chong Li, Oliver A. Williams	1
2	Characterizing electric fields in semiconductor devices: effect of second-harmonic light interference 2024 ·Optics Letters ·(unknown), James W. Pomeroy, Martin Kuball	0
3	Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications 2024 ·IEEE Microwave Magazine ·Farid Medjdoub, K. Shinohara, Fabian Thome, Jeong‐Sun Moon, Eduardo M. Chumbes, Matthew Guidry, Umesh K. Mishra, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, James W. Pomeroy, (unknown), Martin Kuball	7
4	AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach 2023 ·Semiconductor Science and Technology ·(unknown), Michael J. Uren, (unknown), (unknown), Robert S. Howell, Martin Kuball	4
5	Modelling of impedance dispersion in lateral β-Ga₂O₃ MOSFETs due to parallel conductive Si-accumulation layer 2023 ·Applied Physics Express ·(unknown), Abhishek Mishra, (unknown), (unknown), Michael J. Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball	2
6	Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices 2023 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), K. Hušeková, Xiang Zheng, A. Rosová, Edmund Dobročka, M. Ťapajna, Matej Mičušík, Peter Nádaždy, (unknown), (unknown), (unknown), James W. Pomeroy, Martin Kuball, Filip Gucmann	19
7	Raman analysis of inverse vulcanised polymers 2023 ·Polymer Chemistry ·(unknown), Cássio Lima, David C. Milán, Alex R. Neale, (unknown), Bowen Zhang, Andrei Sarua, Royston Goodacre, Laurence J. Hardwick, Martin Kuball, Tom Hasell	18
8	Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices 2022 ·Applied Physics Letters ·(unknown), (unknown), (unknown), Martin Kuball, Krishna C. Balram	17
9	Thermal characterization of direct wafer bonded Si-on-SiC 2022 ·Applied Physics Letters ·D. Field, James W. Pomeroy, Farzan Gity, Michael Schmidt, (unknown), Fan Li, Peter Michael Gammon, Vishal Ajit Shah, Martin Kuball	14
10	Unusual Deformation and Fracture in Gallium Telluride Multilayers 2022 ·The Journal of Physical Chemistry Letters ·Yan Zhou, Shi Zhou, Penghua Ying, Qinghua Zhao, Yong Xie, Mingming Gong, (unknown), Hui Cai, Bin Chen, Sefaattin Tongay, (unknown), Wanqi Jie, Tao Wang, Ping‐Heng Tan, Dong Liu, Martin Kuball	12
11	Scanning thermal microscopy for accurate nanoscale device thermography 2021 ·Nano Today ·Filip Gucmann, James W. Pomeroy, Martin Kuball	24
12	Breakdown Mechanisms in β-Ga₂O₃ Trench-MOS Schottky-Barrier Diodes 2021 ·IEEE Transactions on Electron Devices ·(unknown), Stefano Dalcanale, (unknown), Michael J. Uren, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Martin Kuball	16
13	Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient 2020 ·Chemistry of Materials ·Jiahan Li, Chao Yuan, Christine Elias, Junyong Wang, Xiaotian Zhang, Gaihua Ye, (unknown), Martin Kuball, Goki Eda, Joan M. Redwing, Rui He, Guillaume Cassabois, Bernard Gil, Pierre Valvin, Thomas Pelini, Bin Liu, James H. Edgar	35
14	Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors 2020 ·IEEE Electron Device Letters ·(unknown), Michael J. Uren, Benoit Bakeroot, Ming Zhao, Stefaan Decoutere, Martin Kuball	21
15	A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation 2019 ·CrystEngComm ·(unknown), S. Hasenöhrl, (unknown), Peter Šiffalovič, Edmund Dobročka, D. Machajdı́k, A. Rosová, Filip Gucmann, Jaroslav Kováč, I. Maťko, Martin Kuball, J. Kuzmı́k	2
16	Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology 2019 ·IEEE Transactions on Electron Devices ·Hareesh Chandrasekar, Michael J. Uren, (unknown), H. Hirshy, (unknown), K. Elgaid, James W. Pomeroy, P.J. Tasker, Martin Kuball	24
17	Annealing effect of surface-activated bonded diamond/Si interface 2019 ·Diamond and Related Materials ·Jianbo Liang, Yan Zhou, Satoshi Masuya, Filip Gucmann, Manikant Singh, James W. Pomeroy, Seongwoo Kim, Martin Kuball, Makoto Kasu, Naoteru Shigekawa	35
18	Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene 2019 ·ACS Omega ·(unknown), Yan Zhou, Yong Xie, Qinghua Zhao, Hui Cai, Bin Chen, Wanqi Jie, Sefaattin Tongay, Tao Wang, Martin Kuball	22
19	Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT 2009 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·(unknown), K. Kálna, Martin Kuball, D.G. Hayes, Michael J. Uren, (unknown)	1
20	Effect of pressure on the Raman scattering of wurtzite AlN 2006 ·physica status solidi (b) ·F. J. Manjón, Daniel Errandonea, N. Garro, A. Romero, J. Serrano, Martin Kuball	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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