H. Hahn

1.4k citations

65 papers · 1.1k indexed · h-index 19

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 21
Signal Processing top 5%
- Digital Filter Design and Implementation 8
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 27
- Photonic and Optical Devices 7
Computational Theory and Mathematics top 5%
- Numerical Methods and Algorithms 9
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 8
Materials Chemistry
- ZnO doping and properties 7

Co-authors: Andrei Vescan H. Kalisch B.J. Hosticka Dirk Timmermann M. Heuken B. Reuters N. Ketteniss Alexander Pooth
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Signal Processing
Journals: IEEE Transactions on Electron Devices (6 papers)Semiconductor Science and Technology (6 papers)Journal of Applied Physics (2 papers)
Partner nations: Germany Switzerland Belgium

In The Last Decade

H. Hahn

61 papers receiving 1.0k citations

Peers

Countries citing papers authored by H. Hahn

Since Specialization

Citations

This map shows the geographic impact of H. Hahn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Hahn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Hahn more than expected).

Fields of papers citing papers by H. Hahn

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Hahn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Hahn. The network helps show where H. Hahn may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Hahn, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Hahn Line = papers co-authored together H. Hahn links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Low-stress MOCVD-grown 15 μm GaN layers on 200 mm engineered substrates with minimal wafer bow Applied Physics Letters ·Kwang Jae Lee,Nur Azizah A.R,Sourish Banerjee,Thomas Nuytten,В. И. Вишневский,H. Hahn,美雄中井,M.A. Orlov,Karen Geens,Stefaan Decoutere,R. Langer,Anurag Vohra	2025	0
2	Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n⁺ (In)GaN Source/Drain Layers for Radio Frequency Transistors physica status solidi (a) ·Sourish Banerjee,Uthayasankaran Peralagu,A. Alian,Ming Zhao,H. Hahn,Albert Minj,Фролов Валерий Александрович,Anurag Vohra,Bertrand Parvais,R. Langer,Nadine Collaert	2024	1
3	Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing Scientific Reports ·Khalid El Ouafa,Matteo Borga,Karen Geens,Feitoza João Vitor Fonseca,Alberto Jovellar,Sourish Banerjee,Anurag Vohra,Wei Mi,Albert Minj,H. Hahn,В.Н. Сальков,Dirk Fahle,Benoit Bakeroot,Stefaan Decoutere	2023	7
4	Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application Applied Physics Letters ·Anurag Vohra,Karen Geens,Ming Zhao,Elliott K. Tannor,H. Hahn,Dirk Fahle,Benoit Bakeroot,D. Wellekens,Фролов Валерий Александрович,R. Langer,Stefaan Decoutere	2022	13
5	Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks Semiconductor Science and Technology ·Meng Xiaozh,H. Hahn,Marshall Nadine,Canon Lau,Liu Qian,Vladimír Junek,聡白木,Renato Negra,H. Kalisch,Andrei Vescan,M. Heuken	2021	8
6	Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model IEEE Journal of the Electron Devices Society ·Yomna M. Abdelmoniem,M. Alomari,Marcellino Livia,Dirk Fahle,H. Hahn,M. Heuken,Joachim N. Burghartz	2021	15
7	Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates IEEE Transactions on Semiconductor Manufacturing ·Xiangdong Li,Karen Geens,D. Wellekens,Ming Zhao,Alessandro Magnani,Nooshin Amirifar,Benoit Bakeroot,Shuzhen You,Dirk Fahle,H. Hahn,M. Heuken,gnacio Nuñez,Özgür Aktaş,C. Basceri,Denis Marcon,G. Groeseneken,Stefaan Decoutere	2020	17
8	Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses H. Hahn,Giorgos Kostopoulos,Vladimír Junek,Barbara Waldern,R.L. Zhang,П.А. Вишнякова,Laura DeLorenzo Denison,Renato Negra,H. Kalisch,Andrei Vescan	2018	0
9	Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors RWTH Publications (RWTH Aachen) ·H. Hahn,Michael J. Uren,Andrei Vescan	2015	3
10	First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors H. Hahn,B. Reuters,R.L. Zhang,Barbara Waldern,J. Hughey,H. Kalisch,Andrei Vescan	2014	43
11	The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices Semiconductor Science and Technology ·Giorgos Kostopoulos,Dirk Fahle,Samiha Chaguetmi,H. Hahn,Jingzhe Hao,W. Prost,H. Kalisch,M. Heuken,Andrei Vescan	2014	58
12	Insulating behavior of interfaces in regrown Al_0.23Ga_0.77N/GaN double heterostructures on Al_0.07Ga_0.93N back‐barrier templates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·B. Reuters,H. Hahn,H. Behmenburg,M. Heuken,H. Kalisch,Andrei Vescan	2013	3
13	First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors Japanese Journal of Applied Physics ·H. Hahn,B. Reuters,Alexander Pooth,聡白木,H. Kalisch,Andrei Vescan	2013	13
14	Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers Journal of Electronic Materials ·B. Reuters,Anish H. Gandhi,N. Ketteniss,H. Hahn,B. Holländer,M. Heuken,H. Kalisch,Andrei Vescan	2013	31
15	First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET Semiconductor Science and Technology ·H. Hahn,Jackson George Green,Anish H. Gandhi,N. Ketteniss,Fouad Benkhelifa,O. Ambacher,H. Kalisch,Andrei Vescan	2012	26
16	Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance Applied Physics Express ·H. Hahn,Barbara Waldern,N. Ketteniss,H. Kalisch,Andrei Vescan	2011	69
17	A unified and division-free CORDIC argument reduction method with unlimited convergence domain including inverse hyperbolic functions IEEE Transactions on Computers ·H. Hahn,Dirk Timmermann,B.J. Hosticka,Arnaud Grommet	1994	10
18	A Cordic-based Floating-point Arithmetic Unit Arnaud Grommet,Dirk Timmermann,H. Hahn,B.J. Hosticka	1992	1
19	<title>CORDIC processor architectures</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·R Montinaro,Dirk Timmermann,H. Hahn,B.J. Hosticka	1991	2
20	Modified CORDIC algorithm with reduced iterations Electronics Letters ·Dirk Timmermann,H. Hahn,B.J. Hosticka	1989	19

About H. Hahn

H. Hahn is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Signal Processing, having authored 65 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (27 papers), Ga2O3 and related materials (21 papers), Numerical Methods and Algorithms (9 papers), Semiconductor Quantum Structures and Devices (8 papers), Digital Filter Design and Implementation (8 papers), ZnO doping and properties (7 papers) and Photonic and Optical Devices (7 papers). The work is most often cited by research in Condensed Matter Physics (654 citations), Electronic, Optical and Magnetic Materials (359 citations) and Signal Processing (141 citations). H. Hahn has collaborated with scholars based in Germany, Switzerland and Belgium. Frequent co-authors include Andrei Vescan, H. Kalisch, B.J. Hosticka, Dirk Timmermann, M. Heuken, B. Reuters, N. Ketteniss, Alexander Pooth, Lukas Czornomaz and Yannick Baumgartner. Their work appears in journals such as IEEE Transactions on Electron Devices, Semiconductor Science and Technology, Journal of Applied Physics, Journal of Crystal Growth and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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