H. Hahn

1.4k total citations
65 papers, 1.1k citations indexed

About

H. Hahn is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H. Hahn has authored 65 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 37 papers in Condensed Matter Physics and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H. Hahn's work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (27 papers) and Ga2O3 and related materials (21 papers). H. Hahn is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (27 papers) and Ga2O3 and related materials (21 papers). H. Hahn collaborates with scholars based in Germany, Switzerland and Belgium. H. Hahn's co-authors include Andrei Vescan, H. Kalisch, B.J. Hosticka, Dirk Timmermann, M. Heuken, B. Reuters, N. Ketteniss, Alexander Pooth, Lukas Czornomaz and Yannick Baumgartner and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Pattern Analysis and Machine Intelligence.

In The Last Decade

H. Hahn

61 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Hahn Germany 19 676 654 359 235 168 65 1.1k
B.K. Middleton United Kingdom 15 191 0.3× 241 0.4× 324 0.9× 666 2.8× 97 0.6× 103 865
Simon John Greaves Japan 17 152 0.2× 214 0.3× 332 0.9× 815 3.5× 207 1.2× 147 1.0k
J. Mallinson United States 17 264 0.4× 179 0.3× 361 1.0× 479 2.0× 59 0.4× 57 953
Richard M. Brockie United States 10 130 0.2× 82 0.1× 170 0.5× 426 1.8× 103 0.6× 23 593
I. Tagawa Japan 11 104 0.2× 146 0.2× 297 0.8× 560 2.4× 70 0.4× 73 695
D.T. Wilton United Kingdom 13 171 0.3× 78 0.1× 105 0.3× 346 1.5× 80 0.5× 60 569
Raymond Quéré France 20 1.7k 2.6× 775 1.2× 66 0.2× 331 1.4× 30 0.2× 159 1.9k
Thomas Meier Australia 14 161 0.2× 245 0.4× 216 0.6× 505 2.1× 6 0.0× 30 994
T. C. Strand United States 10 407 0.6× 97 0.1× 100 0.3× 182 0.8× 42 0.3× 32 699
Michaël Tran Singapore 15 260 0.4× 91 0.1× 180 0.5× 450 1.9× 9 0.1× 49 681

Countries citing papers authored by H. Hahn

Since Specialization
Citations

This map shows the geographic impact of H. Hahn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Hahn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Hahn more than expected).

Fields of papers citing papers by H. Hahn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Hahn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Hahn. The network helps show where H. Hahn may publish in the future.

Co-authorship network of co-authors of H. Hahn

This figure shows the co-authorship network connecting the top 25 collaborators of H. Hahn. A scholar is included among the top collaborators of H. Hahn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Hahn. H. Hahn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Kwang Jae, Sourish Banerjee, Thomas Nuytten, et al.. (2025). Low-stress MOCVD-grown 15 μm GaN layers on 200 mm engineered substrates with minimal wafer bow. Applied Physics Letters. 127(24).
2.
Banerjee, Sourish, Uthayasankaran Peralagu, A. Alian, et al.. (2024). Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors. physica status solidi (a). 221(21). 1 indexed citations
3.
Borga, Matteo, Karen Geens, Sourish Banerjee, et al.. (2023). Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing. Scientific Reports. 13(1). 15931–15931. 7 indexed citations
4.
Vohra, Anurag, Karen Geens, Ming Zhao, et al.. (2022). Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application. Applied Physics Letters. 120(26). 13 indexed citations
5.
Hahn, H., et al.. (2021). Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks. Semiconductor Science and Technology. 36(7). 75008–75008. 8 indexed citations
6.
Alomari, M., et al.. (2021). Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model. IEEE Journal of the Electron Devices Society. 9. 748–755. 15 indexed citations
7.
Li, Xiangdong, Karen Geens, D. Wellekens, et al.. (2020). Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates. IEEE Transactions on Semiconductor Manufacturing. 33(4). 534–538. 17 indexed citations
8.
Schneider, K., Yannick Baumgartner, Simon Hönl, et al.. (2019). Optomechanics with one-dimensional gallium phosphide photonic crystal cavities. Optica. 6(5). 577–577. 31 indexed citations
9.
10.
Seifried, M., Gustavo Villares, Yannick Baumgartner, et al.. (2018). Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers. IEEE Journal of Selected Topics in Quantum Electronics. 24(6). 1–9. 25 indexed citations
11.
Hahn, H., Michael J. Uren, & Andrei Vescan. (2015). Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors. RWTH Publications (RWTH Aachen). 3 indexed citations
12.
Hahn, H., B. Reuters, Alexander Pooth, H. Kalisch, & Andrei Vescan. (2014). Characterization of GaN-based p-channel device structures at elevated temperatures. Semiconductor Science and Technology. 29(7). 75002–75002. 12 indexed citations
13.
Reuters, B., N. Ketteniss, H. Hahn, et al.. (2013). Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers. Journal of Electronic Materials. 42(5). 826–832. 31 indexed citations
14.
Hahn, H., Fouad Benkhelifa, O. Ambacher, et al.. (2013). GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm. Japanese Journal of Applied Physics. 52(9R). 90204–90204. 13 indexed citations
15.
Hahn, H., et al.. (2013). First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors. Japanese Journal of Applied Physics. 52(12R). 128001–128001. 13 indexed citations
16.
Reuters, B., H. Hahn, H. Behmenburg, et al.. (2013). Insulating behavior of interfaces in regrown Al0.23Ga0.77N/GaN double heterostructures on Al0.07Ga0.93N back‐barrier templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 799–802. 3 indexed citations
17.
Hahn, H., N. Ketteniss, Fouad Benkhelifa, et al.. (2012). First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET. Semiconductor Science and Technology. 27(5). 55004–55004. 26 indexed citations
18.
Hahn, H., et al.. (1994). A unified and division-free CORDIC argument reduction method with unlimited convergence domain including inverse hyperbolic functions. IEEE Transactions on Computers. 43(11). 1339–1344. 10 indexed citations
19.
Timmermann, Dirk, et al.. (1991). <title>CORDIC processor architectures</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1566. 208–219. 2 indexed citations
20.
Timmermann, Dirk, H. Hahn, & B.J. Hosticka. (1989). Modified CORDIC algorithm with reduced iterations. Electronics Letters. 25(15). 950–951. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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