Joff Derluyn

2.1k citations

79 papers · 1.7k indexed · h-index 23

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 68
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 33
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 41
- Silicon Carbide Semiconductor Technologies 15
- Radio Frequency Integrated Circuit Design 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 17
Materials Chemistry top 10%
- ZnO doping and properties 8
Mechanics of Materials
- Metal and Thin Film Mechanics 11

Co-authors: Marianne Germain Stefan Degroote Maarten Leys Kai Cheng G. Borghs Domenica Visalli Farid Medjdoub Gustaaf Borghs
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (7 papers)Journal of Crystal Growth (5 papers)Journal of Applied Physics (4 papers)
Partner nations: Belgium France Germany

In The Last Decade

Joff Derluyn

77 papers receiving 1.7k citations

Peers

Countries citing papers authored by Joff Derluyn

Since Specialization

Citations

This map shows the geographic impact of Joff Derluyn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Joff Derluyn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Joff Derluyn more than expected).

Fields of papers citing papers by Joff Derluyn

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Joff Derluyn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Joff Derluyn. The network helps show where Joff Derluyn may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Joff Derluyn, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Joff Derluyn Line = papers co-authored together Joff Derluyn links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Growth of magnesium nitride thin films on various surfaces via atomic-nitrogen-assisted molecular beam epitaxy at moderate substrate temperatures Applied Physics A ·Koen Schouteden,Wong Pt,María Recamán Payo,الطيب سالم محمد بازينة,桃代園田,Vijay Shankar Rangasamy,Joff Derluyn,Mariela Menghini,Jin Won Seo,Jean‐Pierre Locquet	2022	1
2	Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors Micromachines ·Idriss Abid,Masaya Nagaoka,和兆荣,Joff Derluyn,Farid Medjdoub	2022	1
3	Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment Micromachines ·Alaleh Tajalli,Matteo Borga,Matteo Meneghini,Carlo De Santi,Dailyng Boom-Cárcamo,Shaobin Li,C. Wilks,Joff Derluyn,Stefan Degroote,Marianne Germain,Kai Zhang,Idriss Abid,Elke Meißner,Enrico Zanoni,Farid Medjdoub,Gaudenzio Meneghesso	2020	3
4	Vertical breakdown of GaN on Si due to V-pits Journal of Applied Physics ·Shaobin Li,Elke Meißner,Alaleh Tajalli,Matteo Meneghini,J. A. Freitas,Joff Derluyn,Farid Medjdoub,Gaudenzio Meneghesso,Jochen Friedrich,Tobias Erlbacher	2020	23
5	High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications Materials ·Alaleh Tajalli,Matteo Meneghini,Shaobin Li,Riad Kabouche,Idriss Abid,C. Wilks,Joff Derluyn,Stefan Degroote,Marianne Germain,Elke Meißner,Enrico Zanoni,Farid Medjdoub,Gaudenzio Meneghesso	2020	18
6	The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors Scientific Reports ·Shaobin Li,Elke Meißner,Farid Medjdoub,Joff Derluyn,Jochen Friedrich,Tobias Erlbacher	2020	40
7	Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures physica status solidi (a) ·Riad Kabouche,Idriss Abid,C. Wilks,Joff Derluyn,Stefan Degroote,Marianne Germain,Alaleh Tajalli,Matteo Meneghini,Gaudenzio Meneghesso,Farid Medjdoub	2019	9
8	Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs Applied Physics Letters ·Yan Zhou,Mitchell Tam,J. Anaya,Svetlana Korneychuk,Joff Derluyn,Huarui Sun,James W. Pomeroy,Johan Verbeeck,Ken Haenen,Martin Kuball	2017	116
9	1900 V, 1.6 mΩ cm²AlN/GaN-on-Si power devices realized by local substrate removal Applied Physics Express ·Cristina-Elena Biță,Isabelle Roch‐Jeune,Nicolas Rolland,Domenica Visalli,Joff Derluyn,Stefan Degroote,Marianne Germain,Farid Medjdoub	2014	54
10	(Invited) Epitaxial Growth of III-Nitrides on Silicon Substrates ECS Transactions ·Stefan Degroote,Maarten Leys,Kai Cheng,Patricio Canepa Fernández,Joff Derluyn,Gustaaf Borghs,Marianne Germain	2010	1
11	AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Paweł E. Malinowski,J.-Y. Duboz,J. John,Yun Han Dae,J. Das,Joff Derluyn,M. Germain,Piet De Moor,GH Weber,F. Sèmond,Éric Frayssinet,J.‐F. Hochedez,B. Giordanengo,Chris Van Hoof,R. Mertens	2010	3
12	Switching assessment of GaN transistors for power conversion applications European Conference on Power Electronics and Applications ·J. Das,Denis Marcon,M. Van Hove,Joff Derluyn,Marianne Germain,G. Borghs	2009	8
13	Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf> Joff Derluyn,M. Van Hove,Domenica Visalli,Anne Lorenz,Denis Marcon,Puneet Srivastava,Karen Geens,Patricio Canepa Fernández,Oleg Sinyugin,Xuanwu Kang,J. Das,Farid Medjdoub,Kai Cheng,Stefan Degroote,Maarten Leys,G. Borghs,Marianne Germain	2009	29
14	AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Paweł E. Malinowski,Joachim John,Anne Lorenz,Joseph Anderberg,Marianne Germain,Joff Derluyn,Kai Cheng,Gustaaf Borghs,R. Mertens,H. M. Treloar,Fabrice Semond,J.‐F. Hochedez,A. BenMoussa	2008	5
15	AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance Domenica Visalli,Joff Derluyn,Stefan Degroote,Raquel Garcia Feregrino,Kai Cheng,M. Germain,M. Van Hove,G. Borghs	2008	1
16	Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer Journal of Applied Physics ·R. Kudrawiec,Pedro Celso Braga Alexandre,M. Motyka,J. Misiewicz,Joff Derluyn,Anne Lorenz,Kai Cheng,J. Das,M. Germain	2008	12
17	Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H‐SiC Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Steven Boeykens,Maarten Leys,Marianne Germain,Kai Cheng,Joff Derluyn,Benny Van Daele,Gustaaf Van Tendeloo,Ronnie Belmans,G. Borghs	2006	6
18	Substrate removal of AlGaN/GaN HEMTs using laser lift‐off Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J. Das,Wouter Ruythooren,Osama Omran,Joff Derluyn,Marianne Germain,G. Borghs	2005	13
19	The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN Applied Physics Letters ·Benny Van Daele,G. Van Tendeloo,Wouter Ruythooren,Joff Derluyn,Maarten Leys,Marianne Germain	2005	90
20	High quality AlGaInP layers on GaAs and Ge grown by MOVPE. Ghent University Academic Bibliography (Ghent University) ·Petra Pakropa,Joff Derluyn,C Kraiem,Miloš Stanojević,Ingrid Moerman,Piet Demeester	1999	1

About Joff Derluyn

Joff Derluyn is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Structural Biology and Atomic and Molecular Physics, and Optics, having authored 79 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (68 papers), Semiconductor materials and devices (41 papers), Ga2O3 and related materials (33 papers), Semiconductor Quantum Structures and Devices (17 papers), Silicon Carbide Semiconductor Technologies (15 papers), Metal and Thin Film Mechanics (11 papers), ZnO doping and properties (8 papers) and Radio Frequency Integrated Circuit Design (6 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (783 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (352 citations) and Materials Chemistry (447 citations). Joff Derluyn has collaborated with scholars based in Belgium, France and Germany. Frequent co-authors include Marianne Germain, Stefan Degroote, Maarten Leys, Kai Cheng, G. Borghs, Domenica Visalli, Farid Medjdoub, Gustaaf Borghs, Wouter Ruythooren and M. Van Hove. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Japanese Journal of Applied Physics and Microelectronics Reliability.

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