Joff Derluyn

2.1k total citations
79 papers, 1.7k citations indexed

About

Joff Derluyn is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Joff Derluyn has authored 79 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Condensed Matter Physics, 63 papers in Electrical and Electronic Engineering and 33 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Joff Derluyn's work include GaN-based semiconductor devices and materials (68 papers), Semiconductor materials and devices (41 papers) and Ga2O3 and related materials (33 papers). Joff Derluyn is often cited by papers focused on GaN-based semiconductor devices and materials (68 papers), Semiconductor materials and devices (41 papers) and Ga2O3 and related materials (33 papers). Joff Derluyn collaborates with scholars based in Belgium, France and Germany. Joff Derluyn's co-authors include Marianne Germain, Stefan Degroote, Maarten Leys, Kai Cheng, G. Borghs, Domenica Visalli, Farid Medjdoub, Gustaaf Borghs, Wouter Ruythooren and M. Van Hove and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Joff Derluyn

77 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Joff Derluyn Belgium 23 1.5k 1.2k 783 447 352 79 1.7k
Jungwoo Joh United States 20 2.1k 1.3× 1.8k 1.6× 663 0.8× 390 0.9× 406 1.2× 40 2.2k
J. Gillespie United States 25 1.4k 0.9× 1.2k 1.1× 584 0.7× 399 0.9× 320 0.9× 79 1.7k
Takehiro Yoshida Japan 22 1.0k 0.7× 789 0.7× 605 0.8× 469 1.0× 250 0.7× 56 1.3k
Likun Shen United States 12 1.7k 1.1× 1.3k 1.1× 706 0.9× 419 0.9× 461 1.3× 26 1.9k
Carl Hemmingsson Sweden 25 761 0.5× 1.2k 1.0× 644 0.8× 568 1.3× 438 1.2× 83 1.8k
A. Koudymov United States 24 1.6k 1.0× 1.4k 1.2× 734 0.9× 318 0.7× 310 0.9× 53 1.8k
Tomasz Sochacki Poland 20 1.0k 0.7× 512 0.4× 613 0.8× 551 1.2× 229 0.7× 76 1.2k
Frank Brunner Germany 28 2.2k 1.4× 1.5k 1.3× 1.2k 1.5× 704 1.6× 444 1.3× 135 2.5k
G. D. Via United States 25 1.2k 0.8× 1.2k 1.0× 508 0.6× 366 0.8× 309 0.9× 67 1.5k
A. E. Nikolaev Russia 18 900 0.6× 458 0.4× 423 0.5× 460 1.0× 266 0.8× 107 1.1k

Countries citing papers authored by Joff Derluyn

Since Specialization
Citations

This map shows the geographic impact of Joff Derluyn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Joff Derluyn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Joff Derluyn more than expected).

Fields of papers citing papers by Joff Derluyn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Joff Derluyn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Joff Derluyn. The network helps show where Joff Derluyn may publish in the future.

Co-authorship network of co-authors of Joff Derluyn

This figure shows the co-authorship network connecting the top 25 collaborators of Joff Derluyn. A scholar is included among the top collaborators of Joff Derluyn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Joff Derluyn. Joff Derluyn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schouteden, Koen, María Recamán Payo, Vijay Shankar Rangasamy, et al.. (2022). Growth of magnesium nitride thin films on various surfaces via atomic-nitrogen-assisted molecular beam epitaxy at moderate substrate temperatures. Applied Physics A. 128(11). 1 indexed citations
2.
Abid, Idriss, et al.. (2022). Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors. Micromachines. 13(9). 1519–1519. 1 indexed citations
3.
Tajalli, Alaleh, Matteo Borga, Matteo Meneghini, et al.. (2020). Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment. Micromachines. 11(1). 101–101. 3 indexed citations
4.
Meißner, Elke, Alaleh Tajalli, Matteo Meneghini, et al.. (2020). Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics. 127(1). 23 indexed citations
5.
Tajalli, Alaleh, Matteo Meneghini, Riad Kabouche, et al.. (2020). High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 13(19). 4271–4271. 18 indexed citations
6.
Meißner, Elke, et al.. (2020). The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Scientific Reports. 10(1). 17252–17252. 40 indexed citations
7.
Kabouche, Riad, Idriss Abid, Joff Derluyn, et al.. (2019). Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. physica status solidi (a). 217(7). 9 indexed citations
8.
Zhou, Yan, J. Anaya, Svetlana Korneychuk, et al.. (2017). Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs. Applied Physics Letters. 111(4). 116 indexed citations
9.
Roch‐Jeune, Isabelle, Nicolas Rolland, Domenica Visalli, et al.. (2014). 1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal. Applied Physics Express. 7(3). 34103–34103. 54 indexed citations
10.
Degroote, Stefan, Maarten Leys, Kai Cheng, et al.. (2010). (Invited) Epitaxial Growth of III-Nitrides on Silicon Substrates. ECS Transactions. 33(6). 833–842. 1 indexed citations
11.
Malinowski, Paweł E., J.-Y. Duboz, J. John, et al.. (2010). AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7726. 772617–772617. 3 indexed citations
12.
Das, J., Denis Marcon, M. Van Hove, et al.. (2009). Switching assessment of GaN transistors for power conversion applications. European Conference on Power Electronics and Applications. 1–6. 8 indexed citations
13.
Derluyn, Joff, M. Van Hove, Domenica Visalli, et al.. (2009). Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf>. 1–4. 29 indexed citations
14.
Malinowski, Paweł E., Joachim John, Anne Lorenz, et al.. (2008). AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7003. 70030N–70030N. 5 indexed citations
15.
16.
Kudrawiec, R., M. Motyka, J. Misiewicz, et al.. (2008). Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer. Journal of Applied Physics. 104(9). 12 indexed citations
17.
Boeykens, Steven, Maarten Leys, Marianne Germain, et al.. (2006). Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H‐SiC. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1579–1582. 6 indexed citations
18.
Das, J., et al.. (2005). Substrate removal of AlGaN/GaN HEMTs using laser lift‐off. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2655–2658. 13 indexed citations
19.
Daele, Benny Van, G. Van Tendeloo, Wouter Ruythooren, et al.. (2005). The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN. Applied Physics Letters. 87(6). 90 indexed citations
20.
Derluyn, Joff, et al.. (1999). High quality AlGaInP layers on GaAs and Ge grown by MOVPE.. Ghent University Academic Bibliography (Ghent University). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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